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DMG6602SVTX-7 Diodes Zetex
auf Bestellung 141000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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3000+ | 0.12 EUR |
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Technische Details DMG6602SVTX-7 Diodes Zetex
Description: MOSFET N/P-CH 30V 3.4A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 840mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TSOT-26, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMG6602SVTX-7 nach Preis ab 0.088 EUR bis 0.61 EUR
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DMG6602SVTX-7 | Hersteller : Diodes Zetex |
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auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6602SVTX-7 | Hersteller : Diodes Zetex |
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auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6602SVTX-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6602SVTX-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 36468 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6602SVTX-7 | Hersteller : Diodes Incorporated |
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auf Bestellung 48448 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6602SVTX-7 | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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DMG6602SVTX-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A Mounting: SMD On-state resistance: 100/140mΩ Type of transistor: N/P-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13/9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25...-20A Case: TSOT26 Drain-source voltage: 30/-30V Drain current: 2.7/-2.4A Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMG6602SVTX-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A Mounting: SMD On-state resistance: 100/140mΩ Type of transistor: N/P-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13/9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25...-20A Case: TSOT26 Drain-source voltage: 30/-30V Drain current: 2.7/-2.4A |
Produkt ist nicht verfügbar |