DMG1013UWQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 820MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 820MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.081 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMG1013UWQ-13 Diodes Incorporated
Description: DIODES INC. - DMG1013UWQ-13 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage, tariffCode: 85412100, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 820mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1V, euEccn: NLR, Verlustleistung: 310mW, Bauform - Transistor: SOT-323, Anzahl der Pins: 3Pin(s), Produktpalette: TUK SGACK902S Keystone Coupler, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.5ohm, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote DMG1013UWQ-13 nach Preis ab 0.081 EUR bis 0.57 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMG1013UWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 820MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 820mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 34680 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1013UWQ-13 | Hersteller : Diodes Incorporated | MOSFETs MOSFET BVDSS: |
auf Bestellung 18775 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1013UWQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMG1013UWQ-13 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 9190 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1013UWQ-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMG1013UWQ-13 - Leistungs-MOSFET, p-Kanal, 20 V, 820 mA, 0.5 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 820mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 310mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.5ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 9190 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1013UWQ-13 | Hersteller : Diodes Inc | Trans MOSFET P-CH 20V 0.82A Automotive 3-Pin SOT-323 T/R |
Produkt ist nicht verfügbar |
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DMG1013UWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW Mounting: SMD Application: automotive industry Polarisation: unipolar Kind of package: reel; tape Gate charge: 622.4pC Kind of channel: enhanced Gate-source voltage: ±6V Drain-source voltage: -20V Pulsed drain current: -3A Drain current: -0.54A On-state resistance: 1.5Ω Type of transistor: P-MOSFET Case: SOT323 Power dissipation: 0.31W Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMG1013UWQ-13 | Hersteller : Diodes Zetex | Trans MOSFET P-CH 20V 0.82A Automotive 3-Pin SOT-323 T/R |
Produkt ist nicht verfügbar |
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DMG1013UWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW Mounting: SMD Application: automotive industry Polarisation: unipolar Kind of package: reel; tape Gate charge: 622.4pC Kind of channel: enhanced Gate-source voltage: ±6V Drain-source voltage: -20V Pulsed drain current: -3A Drain current: -0.54A On-state resistance: 1.5Ω Type of transistor: P-MOSFET Case: SOT323 Power dissipation: 0.31W |
Produkt ist nicht verfügbar |