![DMG301NU-7 DMG301NU-7](https://static6.arrow.com/aropdfconversion/arrowimages/30c1663b44ec3f86d2174da4f88601890d242d7b/dmp3099l-7.jpg)
auf Bestellung 528000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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3000+ | 0.15 EUR |
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Technische Details DMG301NU-7 Diodes Zetex
Description: MOSFET N-CH 25V 260MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V.
Weitere Produktangebote DMG301NU-7 nach Preis ab 0.11 EUR bis 0.79 EUR
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DMG301NU-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25V Drain current: 0.23A On-state resistance: 5Ω Type of transistor: N-MOSFET Power dissipation: 0.4W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG301NU-7 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25V Drain current: 0.23A On-state resistance: 5Ω Type of transistor: N-MOSFET Power dissipation: 0.4W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG301NU-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V |
auf Bestellung 528000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG301NU-7 | Hersteller : Diodes Incorporated |
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auf Bestellung 23469 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG301NU-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V |
auf Bestellung 528000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG301NU-7 | Hersteller : Diodes Inc |
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auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG301NU-7 | Hersteller : Diodes Zetex |
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