DGTD120T25S1PT Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: IGBT 1200V-X TO247 TUBE 0.45K
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: Field Stop
Td (on/off) @ 25°C: 73ns/269ns
Switching Energy: 1.44mJ (on), 550µJ (off)
Test Condition: 600V, 25A, 23Ohm, 15V
Gate Charge: 204 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 348 W
auf Bestellung 282597 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 12.57 EUR |
| 10+ | 10.76 EUR |
| 100+ | 8.97 EUR |
| 500+ | 7.92 EUR |
| 1000+ | 7.12 EUR |
| 2000+ | 6.68 EUR |
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Technische Details DGTD120T25S1PT Diodes Incorporated
Description: IGBT 1200V-X TO247 TUBE 0.45K, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A, Supplier Device Package: TO-247, IGBT Type: Field Stop, Td (on/off) @ 25°C: 73ns/269ns, Switching Energy: 1.44mJ (on), 550µJ (off), Test Condition: 600V, 25A, 23Ohm, 15V, Gate Charge: 204 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 348 W.
Weitere Produktangebote DGTD120T25S1PT nach Preis ab 7.6 EUR bis 12.76 EUR
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DGTD120T25S1PT | Hersteller : Diodes Incorporated |
IGBT Transistors IGBT 1200V-X TO247 TUBE 0.45K |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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DGTD120T25S1PT | Hersteller : Diodes Inc |
Trans IGBT Chip N-CH 1200V 50A 348000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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DGTD120T25S1PT | Hersteller : DIODES INCORPORATED |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3 Collector current: 25A Pulsed collector current: 100A Turn-on time: 110ns Turn-off time: 367ns Type of transistor: IGBT Power dissipation: 174W Kind of package: tube Gate charge: 204nC Mounting: THT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DGTD120T25S1PT | Hersteller : DIODES INCORPORATED |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3 Collector current: 25A Pulsed collector current: 100A Turn-on time: 110ns Turn-off time: 367ns Type of transistor: IGBT Power dissipation: 174W Kind of package: tube Gate charge: 204nC Mounting: THT Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |