DMC1030UFDB-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N/P-CH 12V 5.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2598 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 0.67 EUR |
| 31+ | 0.57 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.25 EUR |
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Technische Details DMC1030UFDB-7 Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.36W (Ta), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V, Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote DMC1030UFDB-7 nach Preis ab 0.2 EUR bis 0.69 EUR
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DMC1030UFDB-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFETBVDSS: 8V-24V |
auf Bestellung 6963 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC1030UFDB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMC1030UFDB-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 12V 5.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.36W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMC1030UFDB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |