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DMHC6070LSD-13

DMHC6070LSD-13 Diodes Incorporated

DMHC6070LSD.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 3.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.76 EUR
Mindestbestellmenge: 2500
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Technische Details DMHC6070LSD-13 Diodes Incorporated

Description: MOSFET 2N/2P-CH 60V 3.1A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A, Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V, Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.

Weitere Produktangebote DMHC6070LSD-13 nach Preis ab 0.8 EUR bis 1.85 EUR

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DMHC6070LSD-13 DMHC6070LSD-13 Hersteller : Diodes Incorporated DMHC6070LSD.pdf Description: MOSFET 2N/2P-CH 60V 3.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 6583 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.83 EUR
12+ 1.5 EUR
100+ 1.17 EUR
500+ 0.99 EUR
1000+ 0.81 EUR
Mindestbestellmenge: 10
DMHC6070LSD-13 DMHC6070LSD-13 Hersteller : Diodes Incorporated DMHC6070LSD.pdf MOSFET MOSFET BVDSS: 41V-60V
auf Bestellung 3786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.85 EUR
10+ 1.52 EUR
100+ 1.18 EUR
500+ 1 EUR
1000+ 0.81 EUR
2500+ 0.8 EUR
Mindestbestellmenge: 2
DMHC6070LSD-13 Hersteller : DIODES INCORPORATED DMHC6070LSD.pdf DMHC6070LSD-13 Multi channel transistors
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