DMN3025LFG-13 Diodes Incorporated
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Technische Details DMN3025LFG-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W, Mounting: SMD, Case: PowerDI3333-8, Kind of package: reel; tape, Gate charge: 11.6nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 60A, Drain-source voltage: 30V, Drain current: 7.8A, On-state resistance: 28mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.3W, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DMN3025LFG-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMN3025LFG-13 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Gate charge: 11.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 30V Drain current: 7.8A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN3025LFG-13 | Hersteller : Diodes Incorporated |
MOSFET 30V N-CH MOSFET |
Produkt ist nicht verfügbar |
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| DMN3025LFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Gate charge: 11.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 30V Drain current: 7.8A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar |
Produkt ist nicht verfügbar |