DMN3053L-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.17 EUR |
| 6000+ | 0.16 EUR |
| 9000+ | 0.15 EUR |
| 30000+ | 0.14 EUR |
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Technische Details DMN3053L-7 Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V, Power Dissipation (Max): 760mW (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V.
Weitere Produktangebote DMN3053L-7 nach Preis ab 0.14 EUR bis 0.62 EUR
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DMN3053L-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 0.48W; SOT23 Mounting: SMD Drain current: 3.5A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 0.48W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±12V Case: SOT23 Drain-source voltage: 30V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2630 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3053L-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 0.48W; SOT23 Mounting: SMD Drain current: 3.5A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 0.48W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±12V Case: SOT23 Drain-source voltage: 30V |
auf Bestellung 2630 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3053L-7 | Hersteller : Diodes Incorporated |
MOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF |
auf Bestellung 2995 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3053L-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V |
auf Bestellung 132175 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3053L-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |