Technische Details DMN3042LFDF-13 Diodes Inc
Description: MOSFET N-CH 30V 7A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 10V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 50 V.
Weitere Produktangebote DMN3042LFDF-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMN3042LFDF-13 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Pulsed drain current: 35A Power dissipation: 2.1W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 13.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
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DMN3042LFDF-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 7A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 50 V |
Produkt ist nicht verfügbar |
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DMN3042LFDF-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 10K |
Produkt ist nicht verfügbar |
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| DMN3042LFDF-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Pulsed drain current: 35A Power dissipation: 2.1W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 13.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |