DMN3032LFDBQ-13 Diodes Incorporated
auf Bestellung 69986 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.83 EUR |
| 10+ | 0.72 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.33 EUR |
| 2500+ | 0.3 EUR |
| 10000+ | 0.25 EUR |
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Technische Details DMN3032LFDBQ-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6, Mounting: SMD, Pulsed drain current: 25A, Power dissipation: 1.7W, Gate charge: 10.6nC, Polarisation: unipolar, Drain current: 5A, Kind of channel: enhanced, Drain-source voltage: 30V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: U-DFN2020-6, On-state resistance: 42mΩ, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMN3032LFDBQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMN3032LFDBQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6 Mounting: SMD Pulsed drain current: 25A Power dissipation: 1.7W Gate charge: 10.6nC Polarisation: unipolar Drain current: 5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: U-DFN2020-6 On-state resistance: 42mΩ Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN3032LFDBQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6 Mounting: SMD Pulsed drain current: 25A Power dissipation: 1.7W Gate charge: 10.6nC Polarisation: unipolar Drain current: 5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: U-DFN2020-6 On-state resistance: 42mΩ |
Produkt ist nicht verfügbar |