Technische Details DMN3053L-13 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 35A; 800mW; SOT23, Mounting: SMD, Drain current: 3.5A, On-state resistance: 55mΩ, Type of transistor: N-MOSFET, Power dissipation: 0.8W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 17.2nC, Kind of channel: enhanced, Gate-source voltage: ±12V, Pulsed drain current: 35A, Case: SOT23, Drain-source voltage: 30V, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMN3053L-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN3053L-13 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 35A; 800mW; SOT23 Mounting: SMD Drain current: 3.5A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17.2nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 35A Case: SOT23 Drain-source voltage: 30V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN3053L-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 4A SOT23-3 |
Produkt ist nicht verfügbar |
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DMN3053L-13 | Hersteller : Diodes Incorporated |
MOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF |
Produkt ist nicht verfügbar |
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DMN3053L-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 35A; 800mW; SOT23 Mounting: SMD Drain current: 3.5A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17.2nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 35A Case: SOT23 Drain-source voltage: 30V |
Produkt ist nicht verfügbar |