DMN3051L-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 5.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.8A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.22 EUR |
| 15000+ | 0.2 EUR |
| 30000+ | 0.19 EUR |
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Technische Details DMN3051L-7 Diodes Incorporated
Description: MOSFET N-CH 30V 5.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), Rds On (Max) @ Id, Vgs: 38mOhm @ 5.8A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V.
Weitere Produktangebote DMN3051L-7 nach Preis ab 0.21 EUR bis 0.81 EUR
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DMN3051L-7 | Hersteller : Diodes Incorporated |
MOSFET 1.4W 30V 5.8A |
auf Bestellung 8694 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3051L-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 5.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.8A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V |
auf Bestellung 38598 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3051L-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 20A; 850mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.9A Pulsed drain current: 20A Power dissipation: 850mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced |
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DMN3051L-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 20A; 850mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.9A Pulsed drain current: 20A Power dissipation: 850mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |