DMN3033LSD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 6.9A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 1.21 EUR |
| 17+ | 1.05 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN3033LSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.9A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.9A, Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMN3033LSD-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
DMN3033LSD-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 6.9A 8-Pin SOP T/R |
Produkt ist nicht verfügbar |
|
 |
DMN3033LSD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8 Polarisation: unipolar On-state resistance: 27mΩ Kind of package: reel; tape Drain current: 5.8A Drain-source voltage: 30V Case: SO8 Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 2W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
DMN3033LSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.9A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
Produkt ist nicht verfügbar |
|
 |
DMN3033LSD-13 | Hersteller : Diodes Incorporated |
MOSFET NMOS-DUAL |
Produkt ist nicht verfügbar |
|
|
|
DMN3033LSD-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8 Polarisation: unipolar On-state resistance: 27mΩ Kind of package: reel; tape Drain current: 5.8A Drain-source voltage: 30V Case: SO8 Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 2W |
Produkt ist nicht verfügbar |