DMN3033LDM-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 6.9A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 6.9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.3 EUR |
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Technische Details DMN3033LDM-7 Diodes Incorporated
Description: MOSFET N-CH 30V 6.9A SOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 6.9A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V.
Weitere Produktangebote DMN3033LDM-7 nach Preis ab 0.14 EUR bis 0.84 EUR
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DMN3033LDM-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 2W; SOT26 Mounting: SMD Kind of package: reel; tape Power dissipation: 2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT26 Drain-source voltage: 30V Drain current: 5.8A On-state resistance: 40mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 123 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3033LDM-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 2W; SOT26 Mounting: SMD Kind of package: reel; tape Power dissipation: 2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT26 Drain-source voltage: 30V Drain current: 5.8A On-state resistance: 40mΩ Type of transistor: N-MOSFET |
auf Bestellung 123 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3033LDM-7 | Hersteller : Diodes Incorporated |
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auf Bestellung 7370 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3033LDM-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 6.9A SOT-26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 6.9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V |
auf Bestellung 13649 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3033LDM-7 | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |