DMN3032LFDB-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 6.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 279000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.22 EUR |
| 6000+ | 0.21 EUR |
| 9000+ | 0.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN3032LFDB-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.2A, Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.
Weitere Produktangebote DMN3032LFDB-7 nach Preis ab 0.24 EUR bis 0.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN3032LFDB-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.2A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
auf Bestellung 282134 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
DMN3032LFDB-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS |
auf Bestellung 3000 Stücke: Lieferzeit 486-490 Tag (e) |
|
||||||||||||
| DMN3032LFDB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6 Mounting: SMD Pulsed drain current: 25A Power dissipation: 1.7W Gate charge: 10.6nC Polarisation: unipolar Drain current: 5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: U-DFN2020-6 On-state resistance: 42mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| DMN3032LFDB-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 25A; 1.7W; U-DFN2020-6 Mounting: SMD Pulsed drain current: 25A Power dissipation: 1.7W Gate charge: 10.6nC Polarisation: unipolar Drain current: 5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: U-DFN2020-6 On-state resistance: 42mΩ |
Produkt ist nicht verfügbar |