DMN3032LE-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 5.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V
auf Bestellung 1172500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.32 EUR |
| 5000+ | 0.3 EUR |
| 12500+ | 0.28 EUR |
| 25000+ | 0.27 EUR |
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Technische Details DMN3032LE-13 Diodes Incorporated
Description: MOSFET N-CH 30V 5.6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V.
Weitere Produktangebote DMN3032LE-13 nach Preis ab 0.36 EUR bis 1.11 EUR
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DMN3032LE-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 5.6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V |
auf Bestellung 1173613 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3032LE-13 | Hersteller : Diodes Incorporated |
MOSFET FET BVDSS 25V 30V N-Ch 498pF 4.1nC |
auf Bestellung 34653 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3032LE-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 5.6A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 125000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3032LE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223 Mounting: SMD Pulsed drain current: 25A Power dissipation: 1.8W Polarisation: unipolar Drain current: 4.1A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT223 On-state resistance: 29mΩ Anzahl je Verpackung: 2500 Stücke |
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DMN3032LE-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223 Mounting: SMD Pulsed drain current: 25A Power dissipation: 1.8W Polarisation: unipolar Drain current: 4.1A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT223 On-state resistance: 29mΩ |
Produkt ist nicht verfügbar |