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IPP051N15N5AKSA1 INFINEON TECHNOLOGIES Infineon-IPP051N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a0437e3754cb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Pulsed drain current: 480A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP052N06L3GXKSA1 IPP052N06L3GXKSA1 INFINEON TECHNOLOGIES IPP052N06L3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain current: 80A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.25 EUR
41+ 1.74 EUR
62+ 1.16 EUR
65+ 1.1 EUR
500+ 1.06 EUR
Mindestbestellmenge: 32
IPP052N08N5AKSA1 IPP052N08N5AKSA1 INFINEON TECHNOLOGIES IPP052N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP052NE7N3GXKSA1 IPP052NE7N3GXKSA1 INFINEON TECHNOLOGIES IPP052NE7N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.37 EUR
33+ 2.22 EUR
35+ 2.1 EUR
Mindestbestellmenge: 22
IPP055N03LGXKSA1 IPP055N03LGXKSA1 INFINEON TECHNOLOGIES IPP055N03LG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO220-3-1
Mounting: THT
Case: PG-TO220-3-1
Kind of package: tube
Drain current: 50A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
6+11.91 EUR
10+ 7.15 EUR
24+ 2.97 EUR
65+ 1.1 EUR
500+ 0.64 EUR
Mindestbestellmenge: 6
IPP057N06N3GXKSA1 IPP057N06N3GXKSA1 INFINEON TECHNOLOGIES IPP057N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 233 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.77 EUR
45+ 1.6 EUR
51+ 1.42 EUR
62+ 1.16 EUR
65+ 1.1 EUR
Mindestbestellmenge: 41
IPP05CN10NGXKSA1 INFINEON TECHNOLOGIES Infineon-IPP05CN10N-DS-v01_02-en.pdf?fileId=db3a30432313ff5e012393ad8dec03e7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP060N06NAKSA1 IPP060N06NAKSA1 INFINEON TECHNOLOGIES IPP060N06NAKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP062NE7N3GXKSA1 IPP062NE7N3GXKSA1 INFINEON TECHNOLOGIES IPP062NE7N3G-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP072N10N3GXKSA1 IPP072N10N3GXKSA1 INFINEON TECHNOLOGIES IPP072N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.82 EUR
34+ 2.14 EUR
45+ 1.59 EUR
2000+ 1.09 EUR
Mindestbestellmenge: 26
IPP075N15N3GXKSA1 IPP075N15N3GXKSA1 INFINEON TECHNOLOGIES IPP075N15N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 150V
Drain current: 100A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP076N15N5AKSA1 IPP076N15N5AKSA1 INFINEON TECHNOLOGIES IPP076N15N5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 79A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 79A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP083N10N5AKSA1 IPP083N10N5AKSA1 INFINEON TECHNOLOGIES IPP083N10N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 100W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP086N10N3GXKSA1 IPP086N10N3GXKSA1 INFINEON TECHNOLOGIES IPP086N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP093N06N3GXKSA1 IPP093N06N3GXKSA1 INFINEON TECHNOLOGIES IPP093N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP100N08N3GXKSA1 IPP100N08N3GXKSA1 INFINEON TECHNOLOGIES IPP100N08N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 70A; 100W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 70A
Power dissipation: 100W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.3 EUR
15+ 4.76 EUR
41+ 1.74 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 5
IPP100N08S207AKSA1 IPP100N08S207AKSA1 INFINEON TECHNOLOGIES IPP100N08S207.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 94A; 300W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Technology: OptiMOS™
Drain-source voltage: 80V
Drain current: 94A
On-state resistance: 6.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 144nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP110N20N3GXKSA1 IPP110N20N3GXKSA1 INFINEON TECHNOLOGIES IPP110N20N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain current: 88A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.35 EUR
11+ 6.62 EUR
12+ 6.26 EUR
500+ 6.02 EUR
Mindestbestellmenge: 8
IPP110N20NAAKSA1 IPP110N20NAAKSA1 INFINEON TECHNOLOGIES IPP110N20NA-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP111N15N3GXKSA1 IPP111N15N3GXKSA1 INFINEON TECHNOLOGIES IPP111N15N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3
Mounting: THT
Drain-source voltage: 150V
Drain current: 83A
On-state resistance: 11.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 228 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.15 EUR
16+ 4.63 EUR
17+ 4.22 EUR
50+ 4.06 EUR
Mindestbestellmenge: 14
IPP114N12N3GXKSA1 IPP114N12N3GXKSA1 INFINEON TECHNOLOGIES IPP114N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 120V
Drain current: 75A
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 89 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.69 EUR
31+ 2.32 EUR
39+ 1.86 EUR
45+ 1.62 EUR
47+ 1.53 EUR
Mindestbestellmenge: 27
IPP120N04S302AKSA1 IPP120N04S302AKSA1 INFINEON TECHNOLOGIES IPP120N04S302.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP120N20NFDAKSA1 IPP120N20NFDAKSA1 INFINEON TECHNOLOGIES IPP120N20NFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.05 EUR
14+ 5.21 EUR
15+ 4.92 EUR
50+ 4.73 EUR
Mindestbestellmenge: 9
IPP126N10N3GXKSA1 IPP126N10N3GXKSA1 INFINEON TECHNOLOGIES IPP126N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 100V
Drain current: 58A
On-state resistance: 12.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 121 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.67 EUR
49+ 1.49 EUR
55+ 1.32 EUR
63+ 1.14 EUR
66+ 1.09 EUR
Mindestbestellmenge: 43
IPP12CN10LGXKSA1 IPP12CN10LGXKSA1 INFINEON TECHNOLOGIES IPP12CN10LG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 50 Stücke
Produkt ist nicht verfügbar
IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 INFINEON TECHNOLOGIES IPP147N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 120V
Drain current: 56A
On-state resistance: 14.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 467 Stücke:
Lieferzeit 7-14 Tag (e)
39+1.84 EUR
45+ 1.62 EUR
49+ 1.47 EUR
51+ 1.42 EUR
54+ 1.34 EUR
250+ 1.29 EUR
Mindestbestellmenge: 39
IPP17N25S3100AKSA1 IPP17N25S3100AKSA1 INFINEON TECHNOLOGIES Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Mounting: THT
Drain-source voltage: 250V
Drain current: 13.3A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 68A
Case: PG-TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 483 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.45 EUR
23+ 3.12 EUR
28+ 2.59 EUR
30+ 2.45 EUR
Mindestbestellmenge: 21
IPP180N10N3GXKSA1 IPP180N10N3GXKSA1 INFINEON TECHNOLOGIES IPP180N10N3G-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP200N15N3GXKSA1 IPP200N15N3GXKSA1 INFINEON TECHNOLOGIES IPP200N15N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain current: 50A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 150V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
24+3 EUR
27+ 2.69 EUR
28+ 2.56 EUR
Mindestbestellmenge: 24
IPP200N25N3GXKSA1 IPP200N25N3GXKSA1 INFINEON TECHNOLOGIES IPP200N25N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP220N25NFDAKSA1 IPP220N25NFDAKSA1 INFINEON TECHNOLOGIES IPP220N25NFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP320N20N3GXKSA1 IPP320N20N3GXKSA1 INFINEON TECHNOLOGIES IPP320N20N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 34A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP410N30NAKSA1 IPP410N30NAKSA1 INFINEON TECHNOLOGIES IPP410N30N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 44A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP50R140CPXKSA1 IPP50R140CPXKSA1 INFINEON TECHNOLOGIES IPP50R140CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP50R190CEXKSA1 IPP50R190CEXKSA1 INFINEON TECHNOLOGIES IPP50R190CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 500V
Drain current: 18.5A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 127W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP50R250CPXKSA1 IPP50R250CPXKSA1 INFINEON TECHNOLOGIES IPP50R250CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 476 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.12 EUR
27+ 2.75 EUR
30+ 2.39 EUR
32+ 2.25 EUR
Mindestbestellmenge: 23
IPP50R280CEXKSA1 IPP50R280CEXKSA1 INFINEON TECHNOLOGIES IPP50R280CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP50R299CPXKSA1 IPP50R299CPXKSA1 INFINEON TECHNOLOGIES IPP50R299CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP50R380CEXKSA1 IPP50R380CEXKSA1 INFINEON TECHNOLOGIES IPP50R380CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP50R500CEXKSA1 IPP50R500CEXKSA1 INFINEON TECHNOLOGIES IPP50R500CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; 57W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 500V
Drain current: 7.6A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP50R520CPXKSA1 IPP50R520CPXKSA1 INFINEON TECHNOLOGIES IPP50R520CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP530N15N3GXKSA1 IPP530N15N3GXKSA1 INFINEON TECHNOLOGIES IPP530N15N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO220-3
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 150V
Drain current: 21A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP600N25N3GXKSA1 IPP600N25N3GXKSA1 INFINEON TECHNOLOGIES IPP600N25N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.9 EUR
21+ 3.45 EUR
25+ 2.97 EUR
26+ 2.82 EUR
Mindestbestellmenge: 19
IPP60R022S7XKSA1 IPP60R022S7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: THT
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: TO220
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R040C7XKSA1 IPP60R040C7XKSA1 INFINEON TECHNOLOGIES IPP60R040C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R060P7 IPP60R060P7 INFINEON TECHNOLOGIES IPP60R060P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R074C6XKSA1 IPP60R074C6XKSA1 INFINEON TECHNOLOGIES IPP60R074C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 57.7A; 480.8W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 57.7A
Power dissipation: 480.8W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R080P7 IPP60R080P7 INFINEON TECHNOLOGIES IPP60R080P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R099C6XKSA1 IPP60R099C6XKSA1 INFINEON TECHNOLOGIES IPP60R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R099C7XKSA1 IPP60R099C7XKSA1 INFINEON TECHNOLOGIES IPP60R099C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R099CPXKSA1 IPP60R099CPXKSA1 INFINEON TECHNOLOGIES IPP60R099CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.82 EUR
10+ 7.19 EUR
11+ 6.81 EUR
50+ 6.69 EUR
100+ 6.55 EUR
Mindestbestellmenge: 9
IPP60R099P6XKSA1 IPP60R099P6XKSA1 INFINEON TECHNOLOGIES IPP60R099P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R099P7 IPP60R099P7 INFINEON TECHNOLOGIES IPP60R099P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.79 EUR
14+ 5.21 EUR
15+ 5.03 EUR
16+ 4.75 EUR
50+ 4.56 EUR
Mindestbestellmenge: 13
IPP60R120P7 IPP60R120P7 INFINEON TECHNOLOGIES IPP60R120P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R125C6XKSA1 IPP60R125C6XKSA1 INFINEON TECHNOLOGIES IPP60R125C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R125CPXKSA1 IPP60R125CPXKSA1 INFINEON TECHNOLOGIES IPP60R125CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.21 EUR
10+ 7.32 EUR
Mindestbestellmenge: 7
IPP60R125P6XKSA1 IPP60R125P6XKSA1 INFINEON TECHNOLOGIES IPP60R125P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 500 Stücke
Produkt ist nicht verfügbar
IPP60R160C6XKSA1 IPP60R160C6XKSA1 INFINEON TECHNOLOGIES IPP60R160C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R160P6XKSA1 IPP60R160P6XKSA1 INFINEON TECHNOLOGIES IPP60R160P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R165CPXKSA1 IPP60R165CPXKSA1 INFINEON TECHNOLOGIES IPP60R165CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP051N15N5AKSA1 Infineon-IPP051N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a0437e3754cb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Pulsed drain current: 480A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP052N06L3GXKSA1 IPP052N06L3G-DTE.pdf
IPP052N06L3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain current: 80A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
32+2.25 EUR
41+ 1.74 EUR
62+ 1.16 EUR
65+ 1.1 EUR
500+ 1.06 EUR
Mindestbestellmenge: 32
IPP052N08N5AKSA1 IPP052N08N5-DTE.pdf
IPP052N08N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP052NE7N3GXKSA1 IPP052NE7N3G-DTE.pdf
IPP052NE7N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
22+3.37 EUR
33+ 2.22 EUR
35+ 2.1 EUR
Mindestbestellmenge: 22
IPP055N03LGXKSA1 IPP055N03LG-DTE.pdf
IPP055N03LGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO220-3-1
Mounting: THT
Case: PG-TO220-3-1
Kind of package: tube
Drain current: 50A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+11.91 EUR
10+ 7.15 EUR
24+ 2.97 EUR
65+ 1.1 EUR
500+ 0.64 EUR
Mindestbestellmenge: 6
IPP057N06N3GXKSA1 IPP057N06N3G-DTE.pdf
IPP057N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 233 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.77 EUR
45+ 1.6 EUR
51+ 1.42 EUR
62+ 1.16 EUR
65+ 1.1 EUR
Mindestbestellmenge: 41
IPP05CN10NGXKSA1 Infineon-IPP05CN10N-DS-v01_02-en.pdf?fileId=db3a30432313ff5e012393ad8dec03e7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP060N06NAKSA1 IPP060N06NAKSA1-DTE.pdf
IPP060N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP062NE7N3GXKSA1 IPP062NE7N3G-dte.pdf
IPP062NE7N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP072N10N3GXKSA1 IPP072N10N3G-DTE.pdf
IPP072N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
26+2.82 EUR
34+ 2.14 EUR
45+ 1.59 EUR
2000+ 1.09 EUR
Mindestbestellmenge: 26
IPP075N15N3GXKSA1 IPP075N15N3G-DTE.pdf
IPP075N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 150V
Drain current: 100A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP076N15N5AKSA1 IPP076N15N5.pdf
IPP076N15N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 79A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 79A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP083N10N5AKSA1 IPP083N10N5-DTE.pdf
IPP083N10N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 100W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP086N10N3GXKSA1 IPP086N10N3G-DTE.pdf
IPP086N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP093N06N3GXKSA1 IPP093N06N3G-DTE.pdf
IPP093N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP100N08N3GXKSA1 IPP100N08N3G-DTE.pdf
IPP100N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 70A; 100W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 70A
Power dissipation: 100W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+14.3 EUR
15+ 4.76 EUR
41+ 1.74 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 5
IPP100N08S207AKSA1 IPP100N08S207.pdf
IPP100N08S207AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 94A; 300W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Technology: OptiMOS™
Drain-source voltage: 80V
Drain current: 94A
On-state resistance: 6.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 144nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP110N20N3GXKSA1 IPP110N20N3G-DTE.pdf
IPP110N20N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain current: 88A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+9.35 EUR
11+ 6.62 EUR
12+ 6.26 EUR
500+ 6.02 EUR
Mindestbestellmenge: 8
IPP110N20NAAKSA1 IPP110N20NA-DTE.pdf
IPP110N20NAAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP111N15N3GXKSA1 IPP111N15N3G-DTE.pdf
IPP111N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO220-3
Mounting: THT
Drain-source voltage: 150V
Drain current: 83A
On-state resistance: 11.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 228 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
14+5.15 EUR
16+ 4.63 EUR
17+ 4.22 EUR
50+ 4.06 EUR
Mindestbestellmenge: 14
IPP114N12N3GXKSA1 IPP114N12N3G-DTE.pdf
IPP114N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 120V
Drain current: 75A
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 89 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
27+2.69 EUR
31+ 2.32 EUR
39+ 1.86 EUR
45+ 1.62 EUR
47+ 1.53 EUR
Mindestbestellmenge: 27
IPP120N04S302AKSA1 IPP120N04S302.pdf
IPP120N04S302AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP120N20NFDAKSA1 IPP120N20NFD-DTE.pdf
IPP120N20NFDAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+8.05 EUR
14+ 5.21 EUR
15+ 4.92 EUR
50+ 4.73 EUR
Mindestbestellmenge: 9
IPP126N10N3GXKSA1 IPP126N10N3G-DTE.pdf
IPP126N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 100V
Drain current: 58A
On-state resistance: 12.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 121 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
43+1.67 EUR
49+ 1.49 EUR
55+ 1.32 EUR
63+ 1.14 EUR
66+ 1.09 EUR
Mindestbestellmenge: 43
IPP12CN10LGXKSA1 IPP12CN10LG-DTE.pdf
IPP12CN10LGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 69A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 50 Stücke
Produkt ist nicht verfügbar
IPP147N12N3GXKSA1 IPP147N12N3G-DTE.pdf
IPP147N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 120V
Drain current: 56A
On-state resistance: 14.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 467 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
39+1.84 EUR
45+ 1.62 EUR
49+ 1.47 EUR
51+ 1.42 EUR
54+ 1.34 EUR
250+ 1.29 EUR
Mindestbestellmenge: 39
IPP17N25S3100AKSA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPP17N25S3100AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Mounting: THT
Drain-source voltage: 250V
Drain current: 13.3A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 68A
Case: PG-TO220-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 483 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
21+3.45 EUR
23+ 3.12 EUR
28+ 2.59 EUR
30+ 2.45 EUR
Mindestbestellmenge: 21
IPP180N10N3GXKSA1 IPP180N10N3G-dte.pdf
IPP180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP200N15N3GXKSA1 IPP200N15N3G-DTE.pdf
IPP200N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain current: 50A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 150V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
24+3 EUR
27+ 2.69 EUR
28+ 2.56 EUR
Mindestbestellmenge: 24
IPP200N25N3GXKSA1 IPP200N25N3G-DTE.pdf
IPP200N25N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP220N25NFDAKSA1 IPP220N25NFD-DTE.pdf
IPP220N25NFDAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP320N20N3GXKSA1 IPP320N20N3G-DTE.pdf
IPP320N20N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 34A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP410N30NAKSA1 IPP410N30N-DTE.pdf
IPP410N30NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 44A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP50R140CPXKSA1 IPP50R140CP-DTE.pdf
IPP50R140CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP50R190CEXKSA1 IPP50R190CE-DTE.pdf
IPP50R190CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 500V
Drain current: 18.5A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 127W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP50R250CPXKSA1 IPP50R250CP-DTE.pdf
IPP50R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 476 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.12 EUR
27+ 2.75 EUR
30+ 2.39 EUR
32+ 2.25 EUR
Mindestbestellmenge: 23
IPP50R280CEXKSA1 IPP50R280CE-DTE.pdf
IPP50R280CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP50R299CPXKSA1 IPP50R299CP-DTE.pdf
IPP50R299CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP50R380CEXKSA1 IPP50R380CE-DTE.pdf
IPP50R380CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP50R500CEXKSA1 IPP50R500CE-DTE.pdf
IPP50R500CEXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.6A; 57W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 500V
Drain current: 7.6A
On-state resistance: 0.5Ω
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP50R520CPXKSA1 IPP50R520CP-DTE.pdf
IPP50R520CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP530N15N3GXKSA1 IPP530N15N3G-DTE.pdf
IPP530N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO220-3
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 150V
Drain current: 21A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP600N25N3GXKSA1 IPP600N25N3G-DTE.pdf
IPP600N25N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.9 EUR
21+ 3.45 EUR
25+ 2.97 EUR
26+ 2.82 EUR
Mindestbestellmenge: 19
IPP60R022S7XKSA1 Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d
IPP60R022S7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: THT
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: TO220
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R040C7XKSA1 IPP60R040C7-DTE.pdf
IPP60R040C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R060P7 IPP60R060P7.pdf
IPP60R060P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R074C6XKSA1 IPP60R074C6-DTE.pdf
IPP60R074C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 57.7A; 480.8W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 57.7A
Power dissipation: 480.8W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R080P7 IPP60R080P7.pdf
IPP60R080P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R099C6XKSA1 IPP60R099C6-DTE.pdf
IPP60R099C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R099C7XKSA1 IPP60R099C7-DTE.pdf
IPP60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R099CPXKSA1 IPP60R099CP-DTE.pdf
IPP60R099CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+8.82 EUR
10+ 7.19 EUR
11+ 6.81 EUR
50+ 6.69 EUR
100+ 6.55 EUR
Mindestbestellmenge: 9
IPP60R099P6XKSA1 IPP60R099P6-DTE.pdf
IPP60R099P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R099P7 IPP60R099P7.pdf
IPP60R099P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.79 EUR
14+ 5.21 EUR
15+ 5.03 EUR
16+ 4.75 EUR
50+ 4.56 EUR
Mindestbestellmenge: 13
IPP60R120P7 IPP60R120P7.pdf
IPP60R120P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R125C6XKSA1 IPP60R125C6-DTE.pdf
IPP60R125C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R125CPXKSA1 IPP60R125CP-DTE.pdf
IPP60R125CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+11.21 EUR
10+ 7.32 EUR
Mindestbestellmenge: 7
IPP60R125P6XKSA1 IPP60R125P6-DTE.pdf
IPP60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 500 Stücke
Produkt ist nicht verfügbar
IPP60R160C6XKSA1 IPP60R160C6-DTE.pdf
IPP60R160C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R160P6XKSA1 IPP60R160P6-DTE.pdf
IPP60R160P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPP60R165CPXKSA1 IPP60R165CP-DTE.pdf
IPP60R165CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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