Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (140129) > Seite 1234 nach 2336
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IPA60R280P7 | INFINEON TECHNOLOGIES | IPA60R280P7 THT N channel transistors |
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IPA60R330P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP Kind of package: tube Drain-source voltage: 600V Drain current: 12A On-state resistance: 0.33Ω Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Technology: CoolMOS™ P6 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220FP Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA60R360P7SXKSA1 | INFINEON TECHNOLOGIES | IPA60R360P7SXKSA1 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPA60R380C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA60R380E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA60R380P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA60R400CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.3A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 272 Stücke: Lieferzeit 7-14 Tag (e) |
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IPA60R450E6XKSA1 | INFINEON TECHNOLOGIES | IPA60R450E6XKSA1 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPA60R600E6XKSA1 | INFINEON TECHNOLOGIES | IPA60R600E6XKSA1 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPA60R600P6XKSA1 | INFINEON TECHNOLOGIES | IPA60R600P6XKSA1 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPA60R650CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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IPA65R065C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA65R095C7XKSA1 | INFINEON TECHNOLOGIES | IPA65R095C7XKSA1 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPA65R110CFDXKSA1 | INFINEON TECHNOLOGIES | IPA65R110CFDXKSA1 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPA65R125C7XKSA1 | INFINEON TECHNOLOGIES | IPA65R125C7XKSA1 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPA65R150CFDXKSA1 | INFINEON TECHNOLOGIES | IPA65R150CFDXKSA1 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPA65R190C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 30W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA65R190CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 17.5A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA65R190E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.2A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 207 Stücke: Lieferzeit 7-14 Tag (e) |
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IPA65R225C7XKSA1 | INFINEON TECHNOLOGIES | IPA65R225C7XKSA1 THT N channel transistors |
auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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IPA65R280E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA65R310CFDXKSA1 | INFINEON TECHNOLOGIES | IPA65R310CFDXKSA1 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPA65R380C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA65R650CEXKSA1 | INFINEON TECHNOLOGIES | IPA65R650CEXKSA1 THT N channel transistors |
auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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IPA65R660CFDXKSA1 | INFINEON TECHNOLOGIES | IPA65R660CFDXKSA1 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPA70R360P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Pulsed drain current: 34A Power dissipation: 26.5W Case: TO220FP Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 62 Stücke: Lieferzeit 7-14 Tag (e) |
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IPA80R1K0CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 18A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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IPA80R1K4P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 8.9A; 24W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 8.9A Power dissipation: 24W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA80R360P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; Idm: 34A; 30W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.6A Pulsed drain current: 34A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 58 Stücke: Lieferzeit 7-14 Tag (e) |
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IPA80R750P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 489 Stücke: Lieferzeit 7-14 Tag (e) |
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IPA80R900P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 149 Stücke: Lieferzeit 7-14 Tag (e) |
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IPA90R800C3XKSA1 | INFINEON TECHNOLOGIES | IPA90R800C3XKSA1 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPA95R1K2P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.7A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA95R450P7XKSA1 | INFINEON TECHNOLOGIES | IPA95R450P7 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPA95R750P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP; ESD Mounting: THT Version: ESD Drain-source voltage: 950V Drain current: 5.5A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 28W Polarisation: unipolar Kind of package: tube Gate charge: 23nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220FP Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPAN60R125PFD7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A Type of transistor: N-MOSFET Technology: CoolMOS™ PFD7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 66A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPAN60R210PFD7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 10A; Idm: 42A Type of transistor: N-MOSFET Technology: CoolMOS™ PFD7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 42A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 386mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPAN60R280PFD7SXKSA1 | INFINEON TECHNOLOGIES | IPAN60R280PFD7S THT N channel transistors |
Produkt ist nicht verfügbar |
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IPAN60R360PFD7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A Technology: CoolMOS™ PFD7 Mounting: THT Case: TO220FP Kind of package: tube Power dissipation: 23W Polarisation: unipolar Version: ESD Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Drain-source voltage: 650V Drain current: 6A On-state resistance: 714mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPAN70R360P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 26.5W Case: TO220FP Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Gate charge: 16.4nC Kind of package: tube Kind of channel: enhanced Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 468 Stücke: Lieferzeit 7-14 Tag (e) |
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IPAN70R450P7SXKSA1 | INFINEON TECHNOLOGIES | IPAN70R450P7S THT N channel transistors |
auf Bestellung 202 Stücke: Lieferzeit 7-14 Tag (e) |
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IPAN70R750P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD Mounting: THT Version: ESD Drain-source voltage: 700V Drain current: 4A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 20.8W Polarisation: unipolar Kind of package: tube Gate charge: 8.3nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±16V Case: TO220FP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 242 Stücke: Lieferzeit 7-14 Tag (e) |
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IPAN80R280P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.6A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IPAN80R360P7XKSA1 | INFINEON TECHNOLOGIES | IPAN80R360P7 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPB009N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 180A On-state resistance: 0.95mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Features of semiconductor devices: logic level Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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IPB010N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 180A On-state resistance: 1mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPB011N04LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-7 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.1mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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IPB011N04NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-7 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.1mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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IPB014N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 214W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPB015N04LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 260nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPB015N04NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPB015N08N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 180A On-state resistance: 1.5mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPB016N06L3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 180A On-state resistance: 1.6mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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IPB017N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 180A On-state resistance: 1.7mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPB017N08N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 375W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPB017N10N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 180A On-state resistance: 1.7mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPB019N06L3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-3 Drain-source voltage: 60V Drain current: 120A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 798 Stücke: Lieferzeit 7-14 Tag (e) |
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IPB019N08N3G | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO263-7 Drain-source voltage: 80V Drain current: 180A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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IPB020N04NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Power dissipation: 167W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPB020N10N5ATMA1 | INFINEON TECHNOLOGIES | IPB020N10N5ATMA1 SMD N channel transistors |
Produkt ist nicht verfügbar |
IPA60R280P7 |
Hersteller: INFINEON TECHNOLOGIES
IPA60R280P7 THT N channel transistors
IPA60R280P7 THT N channel transistors
Produkt ist nicht verfügbar
IPA60R330P6XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Kind of package: tube
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Technology: CoolMOS™ P6
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Kind of package: tube
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Technology: CoolMOS™ P6
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPA60R360P7SXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPA60R360P7SXKSA1 THT N channel transistors
IPA60R360P7SXKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPA60R380C6XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPA60R380E6XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPA60R380P6XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPA60R400CEXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.3A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.3A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 272 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 2.14 EUR |
37+ | 1.94 EUR |
43+ | 1.7 EUR |
45+ | 1.6 EUR |
50+ | 1.54 EUR |
IPA60R450E6XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPA60R450E6XKSA1 THT N channel transistors
IPA60R450E6XKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPA60R600E6XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPA60R600E6XKSA1 THT N channel transistors
IPA60R600E6XKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPA60R600P6XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPA60R600P6XKSA1 THT N channel transistors
IPA60R600P6XKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPA60R650CEXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
41+ | 1.74 EUR |
50+ | 1.43 EUR |
58+ | 1.24 EUR |
66+ | 1.09 EUR |
70+ | 1.03 EUR |
IPA65R065C7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPA65R095C7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPA65R095C7XKSA1 THT N channel transistors
IPA65R095C7XKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPA65R110CFDXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPA65R110CFDXKSA1 THT N channel transistors
IPA65R110CFDXKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPA65R125C7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPA65R125C7XKSA1 THT N channel transistors
IPA65R125C7XKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPA65R150CFDXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPA65R150CFDXKSA1 THT N channel transistors
IPA65R150CFDXKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPA65R190C7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPA65R190CFDXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPA65R190E6XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 207 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 4.03 EUR |
21+ | 3.45 EUR |
27+ | 2.75 EUR |
28+ | 2.6 EUR |
100+ | 2.5 EUR |
IPA65R225C7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPA65R225C7XKSA1 THT N channel transistors
IPA65R225C7XKSA1 THT N channel transistors
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 2.46 EUR |
50+ | 1.89 EUR |
IPA65R280E6XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPA65R310CFDXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPA65R310CFDXKSA1 THT N channel transistors
IPA65R310CFDXKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPA65R380C6XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPA65R650CEXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPA65R650CEXKSA1 THT N channel transistors
IPA65R650CEXKSA1 THT N channel transistors
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 1.63 EUR |
250+ | 1.04 EUR |
IPA65R660CFDXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPA65R660CFDXKSA1 THT N channel transistors
IPA65R660CFDXKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPA70R360P7SXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Pulsed drain current: 34A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Pulsed drain current: 34A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 62 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 1.56 EUR |
54+ | 1.34 EUR |
62+ | 1.16 EUR |
IPA80R1K0CEXKSA2 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 3.25 EUR |
34+ | 2.1 EUR |
250+ | 1.29 EUR |
500+ | 1.26 EUR |
IPA80R1K4P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 8.9A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 8.9A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 8.9A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 8.9A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPA80R360P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; Idm: 34A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Pulsed drain current: 34A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; Idm: 34A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Pulsed drain current: 34A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 2.79 EUR |
39+ | 1.84 EUR |
41+ | 1.74 EUR |
100+ | 1.7 EUR |
IPA80R750P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 489 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.09 EUR |
44+ | 1.64 EUR |
65+ | 1.1 EUR |
69+ | 1.04 EUR |
500+ | 1.03 EUR |
1000+ | 1 EUR |
IPA80R900P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 149 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
45+ | 1.62 EUR |
51+ | 1.42 EUR |
72+ | 1 EUR |
76+ | 0.94 EUR |
500+ | 0.92 EUR |
IPA90R800C3XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPA90R800C3XKSA1 THT N channel transistors
IPA90R800C3XKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPA95R1K2P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPA95R450P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPA95R450P7 THT N channel transistors
IPA95R450P7 THT N channel transistors
Produkt ist nicht verfügbar
IPA95R750P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP; ESD
Mounting: THT
Version: ESD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tube
Gate charge: 23nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP; ESD
Mounting: THT
Version: ESD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tube
Gate charge: 23nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPAN60R125PFD7SXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPAN60R210PFD7SXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 10A; Idm: 42A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 42A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 386mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 10A; Idm: 42A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 42A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 386mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPAN60R280PFD7SXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPAN60R280PFD7S THT N channel transistors
IPAN60R280PFD7S THT N channel transistors
Produkt ist nicht verfügbar
IPAN60R360PFD7SXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Technology: CoolMOS™ PFD7
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 23W
Polarisation: unipolar
Version: ESD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 714mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Technology: CoolMOS™ PFD7
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 23W
Polarisation: unipolar
Version: ESD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 714mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPAN70R360P7SXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 468 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
49+ | 1.49 EUR |
54+ | 1.33 EUR |
60+ | 1.2 EUR |
71+ | 1.02 EUR |
75+ | 0.96 EUR |
IPAN70R450P7SXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPAN70R450P7S THT N channel transistors
IPAN70R450P7S THT N channel transistors
auf Bestellung 202 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.43 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
250+ | 0.9 EUR |
IPAN70R750P7SXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Mounting: THT
Version: ESD
Drain-source voltage: 700V
Drain current: 4A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 20.8W
Polarisation: unipolar
Kind of package: tube
Gate charge: 8.3nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Mounting: THT
Version: ESD
Drain-source voltage: 700V
Drain current: 4A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 20.8W
Polarisation: unipolar
Kind of package: tube
Gate charge: 8.3nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
auf Bestellung 242 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
107+ | 0.67 EUR |
122+ | 0.59 EUR |
130+ | 0.55 EUR |
135+ | 0.53 EUR |
148+ | 0.48 EUR |
IPAN80R280P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 7.15 EUR |
13+ | 5.51 EUR |
IPAN80R360P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPAN80R360P7 THT N channel transistors
IPAN80R360P7 THT N channel transistors
Produkt ist nicht verfügbar
IPB009N03LGATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 180A
On-state resistance: 0.95mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 180A
On-state resistance: 0.95mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB010N06NATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB011N04LGATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB011N04NGATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB014N06NATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB015N04LGATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB015N04NGATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB015N08N5ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB016N06L3GATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB017N06N3GATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB017N08N5ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB017N10N5ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 180A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 180A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB019N06L3GATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 798 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 2.53 EUR |
31+ | 2.36 EUR |
32+ | 2.25 EUR |
34+ | 2.12 EUR |
100+ | 2.04 EUR |
IPB019N08N3G |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
IPB020N04NGATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 167W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 167W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB020N10N5ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
IPB020N10N5ATMA1 SMD N channel transistors
IPB020N10N5ATMA1 SMD N channel transistors
Produkt ist nicht verfügbar