Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (139469) > Seite 1232 nach 2325
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPW65R037C6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 83.2A; 500W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 83.2A Power dissipation: 500W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW65R041CFDFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 68.5A Power dissipation: 500W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW65R045C7FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Power dissipation: 227W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW65R065C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Power dissipation: 171W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW65R070C6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 53.5A; 391W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 53.5A Power dissipation: 391W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW65R080CFDA | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 27.4A Power dissipation: 391W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW65R080CFDFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 43.3A Power dissipation: 391W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW65R125C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 101W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW65R190CFDFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 17.5A Power dissipation: 151W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW65R280C6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW65R310CFDFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 11.4A Power dissipation: 104.2W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.31Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW65R420CFDFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.7A Power dissipation: 83.3W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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IPW65R660CFDFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 62.5W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.66Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW80R280P7XKSA1 | INFINEON TECHNOLOGIES | IPW80R280P7 THT N channel transistors |
auf Bestellung 112 Stücke: Lieferzeit 7-14 Tag (e) |
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IPW80R360P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.6A Power dissipation: 84W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPW90R800C3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Power dissipation: 104W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZ40N04S53R1ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 71W Application: automotive industry Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZ40N04S5-5R4 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 48W Application: automotive industry Polarisation: unipolar Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 40A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZ40N04S5-8R4 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 34W Application: automotive industry Polarisation: unipolar Gate charge: 13.7nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 40A On-state resistance: 9.9mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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IPZ40N04S5L-2R8 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 71W Application: automotive industry Polarisation: unipolar Gate charge: 52nC Kind of channel: enhanced Gate-source voltage: ±16V Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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IPZ40N04S5L-4R8 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 48W Application: automotive industry Polarisation: unipolar Gate charge: 29nC Kind of channel: enhanced Gate-source voltage: ±16V Drain-source voltage: 40V Drain current: 40A On-state resistance: 6.7mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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IPZ40N04S5L-7R4 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 34W Application: automotive industry Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±16V Drain-source voltage: 40V Drain current: 40A On-state resistance: 10.7mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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IPZ60R017C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 69A; 446W; PG-TO247-4 Case: PG-TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 240nC Technology: CoolMOS™ C7 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 600V Drain current: 69A On-state resistance: 17mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZ60R040C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Power dissipation: 227W Case: PG-TO247-4 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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IPZ65R019C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-4 Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolMOS™ C7 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 75A On-state resistance: 19mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZ65R045C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-4 Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolMOS™ C7 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 46A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 227W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZ65R065C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-4 Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolMOS™ C7 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 33A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 171W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZ65R095C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4 Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolMOS™ C7 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 24A On-state resistance: 95mΩ Type of transistor: N-MOSFET Power dissipation: 128W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZA60R024P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 63A; Idm: 386A; 291W Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 164nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 386A Drain-source voltage: 650V Drain current: 63A On-state resistance: 24mΩ Type of transistor: N-MOSFET Power dissipation: 291W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZA60R037P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-4 Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 121nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 48A On-state resistance: 37mΩ Type of transistor: N-MOSFET Power dissipation: 255W Polarisation: unipolar Anzahl je Verpackung: 240 Stücke |
Produkt ist nicht verfügbar |
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IPZA60R045P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 206A; 201W Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 206A Power dissipation: 201W Case: PG-TO247-4 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZA60R060P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 164W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 60mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZA60R080P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZA60R099P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 117W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZA60R120P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO247-4 Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 36nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 16A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Power dissipation: 95W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPZA60R180P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 72W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IR1161LTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5 Type of integrated circuit: driver Topology: flyback; push-pull; resonant LLC Kind of integrated circuit: gate driver Case: SOT23-5 Output current: -2.5...1A Power: 590mW Supply voltage: 4.75...18V DC Mounting: SMD Operating temperature: -40...125°C Application: SMPS Kind of package: reel; tape Voltage class: 200V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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IR11672ASTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver Output current: -7...2A Power: 625mW Supply voltage: 11.4...18V DC Case: SO8 Mounting: SMD Operating temperature: -40...125°C Application: SMPS Kind of package: reel; tape Topology: flyback; push-pull; resonant LLC Voltage class: 200V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IR11688STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8 Type of integrated circuit: driver Topology: flyback; push-pull; resonant LLC Kind of integrated circuit: gate driver Case: SO8 Output current: -4...1A Power: 625mW Supply voltage: 4.75...18V DC Mounting: SMD Operating temperature: -40...125°C Application: SMPS Kind of package: reel; tape Voltage class: 200V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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IR1169STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8 Type of integrated circuit: driver Topology: flyback; push-pull; resonant LLC Kind of integrated circuit: gate driver Case: SO8 Output current: -4...1A Power: 625mW Supply voltage: 11...19V DC Mounting: SMD Operating temperature: -40...125°C Application: SMPS Kind of package: reel; tape Voltage class: 200V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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IR2010PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -3...3A Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 200V Turn-on time: 95ns Turn-off time: 65ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2010SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16 Output current: -3...3A Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 200V Turn-on time: 95ns Turn-off time: 65ns Anzahl je Verpackung: 1980 Stücke |
Produkt ist nicht verfügbar |
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IR2010STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16 Output current: -3...3A Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 200V Turn-on time: 95ns Turn-off time: 65ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IR2011PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -1...1A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 200V Turn-on time: 80ns Turn-off time: 60ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IR2011SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -1...1A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 200V Turn-on time: 80ns Turn-off time: 60ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2085STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -1...1A Power: 1W Number of channels: 2 Supply voltage: 10...15V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 100V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IR2101PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -270...130mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 160ns Turn-off time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 421 Stücke: Lieferzeit 7-14 Tag (e) |
|
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IR2101SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 160ns Turn-off time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 529 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2101STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 160ns Turn-off time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2818 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2102SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Supply voltage: 10...20V DC Operating temperature: -40...125°C Mounting: SMD Power: 625mW Output current: -270...130mA Type of integrated circuit: driver Number of channels: 2 Kind of package: tube Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 600V Case: SO8 Turn-on time: 160ns Turn-off time: 150ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IR2102STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 160ns Turn-off time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1975 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2103STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 680ns Turn-off time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 233 Stücke: Lieferzeit 7-14 Tag (e) |
|
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IR2104PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -270...130mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 680ns Turn-off time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 228 Stücke: Lieferzeit 7-14 Tag (e) |
|
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IR2104SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 680ns Turn-off time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 327 Stücke: Lieferzeit 7-14 Tag (e) |
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IR2104STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 680ns Turn-off time: 150ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2194 Stücke: Lieferzeit 7-14 Tag (e) |
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IR21064PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -350...200mA Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Turn-off time: 200ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IR2106SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -350...200mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Turn-off time: 200ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
|
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IR2106STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -350...200mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 220ns Turn-off time: 200ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1086 Stücke: Lieferzeit 7-14 Tag (e) |
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IR21094SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -250...120mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 750ns Turn-off time: 200ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
|
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IR21094STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -250...120mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 750ns Turn-off time: 200ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2379 Stücke: Lieferzeit 7-14 Tag (e) |
|
IPW65R037C6FKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 83.2A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 83.2A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 83.2A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 83.2A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW65R041CFDFKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW65R045C7FKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW65R065C7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW65R070C6FKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW65R080CFDA |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27.4A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 27.4A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 27.4A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW65R080CFDFKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43.3A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43.3A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW65R125C7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW65R190CFDFKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW65R280C6FKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW65R310CFDFKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW65R420CFDFKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
Power dissipation: 83.3W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 17.88 EUR |
6+ | 11.91 EUR |
10+ | 7.15 EUR |
15+ | 4.76 EUR |
30+ | 2.83 EUR |
IPW65R660CFDFKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 62.5W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 62.5W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW80R280P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
IPW80R280P7 THT N channel transistors
IPW80R280P7 THT N channel transistors
auf Bestellung 112 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 6.36 EUR |
18+ | 4.18 EUR |
19+ | 3.93 EUR |
IPW80R360P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW90R800C3FKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPZ40N04S53R1ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 71W
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 71W
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPZ40N04S5-5R4 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 48W
Application: automotive industry
Polarisation: unipolar
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 48W
Application: automotive industry
Polarisation: unipolar
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPZ40N04S5-8R4 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 34W
Application: automotive industry
Polarisation: unipolar
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.9mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 34W
Application: automotive industry
Polarisation: unipolar
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.9mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
IPZ40N04S5L-2R8 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 71W
Application: automotive industry
Polarisation: unipolar
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 71W
Application: automotive industry
Polarisation: unipolar
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
IPZ40N04S5L-4R8 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 48W
Application: automotive industry
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 48W
Application: automotive industry
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
IPZ40N04S5L-7R4 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 34W
Application: automotive industry
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 34W
Application: automotive industry
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
IPZ60R017C7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; 446W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 240nC
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 69A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; 446W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 240nC
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 69A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPZ60R040C7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 18.25 EUR |
5+ | 17.26 EUR |
10+ | 17.12 EUR |
30+ | 16.59 EUR |
IPZ65R019C7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 75A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 75A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPZ65R045C7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 46A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 46A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPZ65R065C7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 171W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 33A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 171W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPZ65R095C7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 128W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Power dissipation: 128W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPZA60R024P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 63A; Idm: 386A; 291W
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 164nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 386A
Drain-source voltage: 650V
Drain current: 63A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 291W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 63A; Idm: 386A; 291W
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 164nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 386A
Drain-source voltage: 650V
Drain current: 63A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET
Power dissipation: 291W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPZA60R037P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 121nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 48A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 255W
Polarisation: unipolar
Anzahl je Verpackung: 240 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 121nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 48A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 255W
Polarisation: unipolar
Anzahl je Verpackung: 240 Stücke
Produkt ist nicht verfügbar
IPZA60R045P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 206A; 201W
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 206A
Power dissipation: 201W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 206A; 201W
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 206A
Power dissipation: 201W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPZA60R060P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPZA60R080P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPZA60R099P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPZA60R120P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 36nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 36nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPZA60R180P7XKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IR1161LTRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SOT23-5
Output current: -2.5...1A
Power: 590mW
Supply voltage: 4.75...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
Anzahl je Verpackung: 3000 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SOT23-5
Output current: -2.5...1A
Power: 590mW
Supply voltage: 4.75...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
IR11672ASTRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Output current: -7...2A
Power: 625mW
Supply voltage: 11.4...18V DC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Output current: -7...2A
Power: 625mW
Supply voltage: 11.4...18V DC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IR11688STRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...1A
Power: 625mW
Supply voltage: 4.75...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
Anzahl je Verpackung: 2500 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...1A
Power: 625mW
Supply voltage: 4.75...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
IR1169STRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...1A
Power: 625mW
Supply voltage: 11...19V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
Anzahl je Verpackung: 2500 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...1A
Power: 625mW
Supply voltage: 11...19V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
IR2010PBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -3...3A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -3...3A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 7.49 EUR |
11+ | 6.75 EUR |
14+ | 5.22 EUR |
15+ | 4.93 EUR |
IR2010SPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Anzahl je Verpackung: 1980 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Anzahl je Verpackung: 1980 Stücke
Produkt ist nicht verfügbar
IR2010STRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -3...3A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IR2011PBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IR2011SPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 4.46 EUR |
18+ | 4.02 EUR |
24+ | 3.06 EUR |
25+ | 2.9 EUR |
95+ | 2.79 EUR |
IR2085STRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IR2101PBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 421 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.93 EUR |
32+ | 2.26 EUR |
34+ | 2.14 EUR |
2500+ | 2.06 EUR |
IR2101SPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 529 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.04 EUR |
39+ | 1.86 EUR |
53+ | 1.36 EUR |
56+ | 1.29 EUR |
IR2101STRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2818 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 1.86 EUR |
43+ | 1.69 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
2500+ | 0.89 EUR |
IR2102SPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Mounting: SMD
Power: 625mW
Output current: -270...130mA
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Case: SO8
Turn-on time: 160ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Mounting: SMD
Power: 625mW
Output current: -270...130mA
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Case: SO8
Turn-on time: 160ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IR2102STRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1975 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
38+ | 1.93 EUR |
43+ | 1.7 EUR |
53+ | 1.37 EUR |
55+ | 1.3 EUR |
250+ | 1.26 EUR |
IR2103STRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 233 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.82 EUR |
44+ | 1.63 EUR |
52+ | 1.4 EUR |
55+ | 1.32 EUR |
500+ | 1.27 EUR |
IR2104PBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 228 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.42 EUR |
24+ | 3.09 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
IR2104SPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 327 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 3.03 EUR |
30+ | 2.39 EUR |
45+ | 1.6 EUR |
48+ | 1.5 EUR |
2565+ | 1.49 EUR |
3800+ | 1.44 EUR |
IR2104STRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2194 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 1.56 EUR |
83+ | 0.87 EUR |
87+ | 0.82 EUR |
2500+ | 0.79 EUR |
IR21064PBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -350...200mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -350...200mA
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IR2106SPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -350...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -350...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.42 EUR |
24+ | 3.09 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
190+ | 2.2 EUR |
IR2106STRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -350...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -350...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1086 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.79 EUR |
45+ | 1.62 EUR |
53+ | 1.37 EUR |
55+ | 1.3 EUR |
100+ | 1.29 EUR |
500+ | 1.26 EUR |
IR21094SPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.43 EUR |
34+ | 2.13 EUR |
40+ | 1.79 EUR |
IR21094STRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2379 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 2.35 EUR |
33+ | 2.17 EUR |
55+ | 1.32 EUR |
58+ | 1.24 EUR |
1000+ | 1.2 EUR |