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IPI045N10N3GXKSA1 IPI045N10N3GXKSA1 INFINEON TECHNOLOGIES IPI045N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI075N15N3GXKSA1 IPI075N15N3GXKSA1 INFINEON TECHNOLOGIES IPI075N15N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI076N12N3GAKSA1 IPI076N12N3GAKSA1 INFINEON TECHNOLOGIES IPI076N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 100A; 168W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 100A
Power dissipation: 168W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 50 Stücke
Produkt ist nicht verfügbar
IPI086N10N3GXKSA1 IPI086N10N3GXKSA1 INFINEON TECHNOLOGIES IPI086N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI111N15N3GAKSA1 IPI111N15N3GAKSA1 INFINEON TECHNOLOGIES IPI111N15N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI120N04S402AKSA1 IPI120N04S402AKSA1 INFINEON TECHNOLOGIES IPI120N04S402.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 103nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI147N12N3GAKSA1 INFINEON TECHNOLOGIES IPP_I_B147N12N3+G_Rev2.6.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a79a30f57d01 IPP_I_B147N12N3+G_Rev2.6.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a79a30f57d01 IPI147N12N3GAKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPI180N10N3GXKSA1 IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES IPI180N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 483 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.6 EUR
52+ 1.39 EUR
74+ 0.97 EUR
79+ 0.92 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 45
IPI200N25N3GAKSA1 IPI200N25N3GAKSA1 INFINEON TECHNOLOGIES IPI200N25N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI320N20N3GAKSA1 IPI320N20N3GAKSA1 INFINEON TECHNOLOGIES IPI320N20N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 34A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI50R140CPXKSA1 IPI50R140CPXKSA1 INFINEON TECHNOLOGIES IPI50R140CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI50R199CPXKSA1 IPI50R199CPXKSA1 INFINEON TECHNOLOGIES IPI50R199CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI50R250CPXKSA1 IPI50R250CPXKSA1 INFINEON TECHNOLOGIES IPI50R250CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI50R350CPXKSA1 IPI50R350CPXKSA1 INFINEON TECHNOLOGIES IPI50R350CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; 89W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 89W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI50R399CPXKSA1 INFINEON TECHNOLOGIES Infineon-IPI50R399CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01238500e97f659a IPI50R399CPXKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPI50R399CPXKSA2 INFINEON TECHNOLOGIES Infineon-IPI50R399CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01238500e97f659a IPI50R399CPXKSA2 THT N channel transistors
Produkt ist nicht verfügbar
IPI530N15N3GXKSA1 IPI530N15N3GXKSA1 INFINEON TECHNOLOGIES IPI530N15N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Technology: OptiMOS™ 3
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Power dissipation: 68W
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI60R099CPXKSA1 IPI60R099CPXKSA1 INFINEON TECHNOLOGIES IPI60R099CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO262-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO262-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 500 Stücke
Produkt ist nicht verfügbar
IPI60R125CPXKSA1 IPI60R125CPXKSA1 INFINEON TECHNOLOGIES IPI60R125CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI60R165CPAKSA1 IPI60R165CPAKSA1 INFINEON TECHNOLOGIES IPI60R165CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI60R190C6XKSA1 IPI60R190C6XKSA1 INFINEON TECHNOLOGIES IPI60R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.7 EUR
18+ 3.98 EUR
100+ 2.82 EUR
Mindestbestellmenge: 16
IPI60R250CPAKSA1 IPI60R250CPAKSA1 INFINEON TECHNOLOGIES IPI60R250CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI60R280C6XKSA1 IPI60R280C6XKSA1 INFINEON TECHNOLOGIES IPI60R280C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 600V
Drain current: 13.8A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI60R380C6XKSA1 IPI60R380C6XKSA1 INFINEON TECHNOLOGIES IPI60R380C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R099C6XKSA1 IPI65R099C6XKSA1 INFINEON TECHNOLOGIES IPI65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R110CFDXKSA1 IPI65R110CFDXKSA1 INFINEON TECHNOLOGIES IPI65R110CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R150CFDXKSA1 IPI65R150CFDXKSA1 INFINEON TECHNOLOGIES IPI65R150CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Drain-source voltage: 650V
Drain current: 22.4A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 195.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R190C6XKSA1 IPI65R190C6XKSA1 INFINEON TECHNOLOGIES IPI65R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R190CFDXKSA1 IPI65R190CFDXKSA1 INFINEON TECHNOLOGIES IPI65R190CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R280C6XKSA1 IPI65R280C6XKSA1 INFINEON TECHNOLOGIES IPI65R280C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R280E6XKSA1 IPI65R280E6XKSA1 INFINEON TECHNOLOGIES IPI65R280E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R310CFDXKSA1 IPI65R310CFDXKSA1 INFINEON TECHNOLOGIES IPI65R310CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO262-3
Drain-source voltage: 650V
Drain current: 11.4A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104.2W
Polarisation: unipolar
Case: PG-TO262-3
Mounting: THT
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R380C6XKSA1 IPI65R380C6XKSA1 INFINEON TECHNOLOGIES IPI65R380C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R420CFDXKSA1 IPI65R420CFDXKSA1 INFINEON TECHNOLOGIES IPI65R420CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3
Technology: CoolMOS™
Case: PG-TO262-3
Mounting: THT
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R600C6XKSA1 INFINEON TECHNOLOGIES DS_2156_IPx65R600C6.pdf IPI65R600C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ac1eb91012ac744ef772c60 IPI65R600C6XKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPI80N06S407AKSA2 IPI80N06S407AKSA2 INFINEON TECHNOLOGIES IPI80N06S407AKSA2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 418 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.65 EUR
30+ 2.39 EUR
36+ 2.02 EUR
38+ 1.9 EUR
250+ 1.83 EUR
Mindestbestellmenge: 28
IPI90R800C3XKSA1 IPI90R800C3XKSA1 INFINEON TECHNOLOGIES IPI90R800C3XKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 404 Stücke:
Lieferzeit 7-14 Tag (e)
53+1.36 EUR
57+ 1.27 EUR
Mindestbestellmenge: 53
IPL60R065P7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL60R065P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebece9815b36 IPL60R065P7 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R075CFD7 IPL60R075CFD7 INFINEON TECHNOLOGIES IPL60R075CFD7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Mounting: SMD
Case: PG-VSON-4
Power dissipation: 189W
Polarisation: unipolar
Gate charge: 67nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: OptiMOS™
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 0.149Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R085P7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL60R085P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed1c9c5b3f IPL60R085P7 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R104C7AUMA1 IPL60R104C7AUMA1 INFINEON TECHNOLOGIES IPL60R104C7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R105P7AUMA1 IPL60R105P7AUMA1 INFINEON TECHNOLOGIES IPL60R105P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 137W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 137W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R125P7AUMA1 IPL60R125P7AUMA1 INFINEON TECHNOLOGIES IPL60R125P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R180P6AUMA1 IPL60R180P6AUMA1 INFINEON TECHNOLOGIES IPL60R180P6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.4A
Power dissipation: 176W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R185CFD7 INFINEON TECHNOLOGIES IPL60R185CFD7 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R199CPAUMA1 IPL60R199CPAUMA1 INFINEON TECHNOLOGIES IPL60R199CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.4A; 139W; PG-VSON-4
Mounting: SMD
Case: PG-VSON-4
Drain-source voltage: 600V
Drain current: 16.4A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R1K5C6SATMA1 INFINEON TECHNOLOGIES DS_IPL60R1K5C6S_2_0.pdf?fileId=5546d4614755559a01475d637950016b IPL60R1K5C6SATMA1 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R210P6AUMA1 IPL60R210P6AUMA1 INFINEON TECHNOLOGIES IPL60R210P6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R285P7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL60R285P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed0cea5b3c IPL60R285P7 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R299CPAUMA1 INFINEON TECHNOLOGIES IPL60R299CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d1c1c8e27f4 IPL60R299CPAUMA1 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R2K1C6SATMA1 INFINEON TECHNOLOGIES DS_IPL60R2K1C6S_2_0.pdf?fileId=5546d4614755559a01475e3d01ca041b IPL60R2K1C6SATMA1 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R365P7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0 IPL60R365P7 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R385CPAUMA1 IPL60R385CPAUMA1 INFINEON TECHNOLOGIES IPL60R385CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R650P6SATMA1 INFINEON TECHNOLOGIES IPL60R650P6S-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Power dissipation: 56.8W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL65R070C7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL65R070C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f091901e6b3d IPL65R070C7AUMA1 SMD N channel transistors
Produkt ist nicht verfügbar
IPL65R099C7AUMA1 IPL65R099C7AUMA1 INFINEON TECHNOLOGIES IPL65R099C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL65R130C7AUMA1 IPL65R130C7AUMA1 INFINEON TECHNOLOGIES IPL65R130C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4
Mounting: SMD
Case: PG-VSON-4
Power dissipation: 102W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 15A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
IPL65R165CFDAUMA1 IPL65R165CFDAUMA1 INFINEON TECHNOLOGIES IPL65R165CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.3A
Power dissipation: 195W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
IPL65R190E6AUMA1 IPL65R190E6AUMA1 INFINEON TECHNOLOGIES IPL65R190E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL65R195C7AUMA1 INFINEON TECHNOLOGIES Infineon-IPL65R195C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f07420a26b18 IPL65R195C7AUMA1 SMD N channel transistors
Produkt ist nicht verfügbar
IPI045N10N3GXKSA1 IPI045N10N3G-DTE.pdf
IPI045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI075N15N3GXKSA1 IPI075N15N3G-DTE.pdf
IPI075N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI076N12N3GAKSA1 IPI076N12N3G-DTE.pdf
IPI076N12N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 100A; 168W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 100A
Power dissipation: 168W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 50 Stücke
Produkt ist nicht verfügbar
IPI086N10N3GXKSA1 IPI086N10N3G-DTE.pdf
IPI086N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI111N15N3GAKSA1 IPI111N15N3G-DTE.pdf
IPI111N15N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI120N04S402AKSA1 IPI120N04S402.pdf
IPI120N04S402AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 103nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI147N12N3GAKSA1 IPP_I_B147N12N3+G_Rev2.6.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a79a30f57d01 IPP_I_B147N12N3+G_Rev2.6.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a79a30f57d01
Hersteller: INFINEON TECHNOLOGIES
IPI147N12N3GAKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPI180N10N3GXKSA1 IPI180N10N3G-DTE.pdf
IPI180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 483 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
45+1.6 EUR
52+ 1.39 EUR
74+ 0.97 EUR
79+ 0.92 EUR
1000+ 0.9 EUR
Mindestbestellmenge: 45
IPI200N25N3GAKSA1 IPI200N25N3G-DTE.pdf
IPI200N25N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI320N20N3GAKSA1 IPI320N20N3G-DTE.pdf
IPI320N20N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 34A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI50R140CPXKSA1 IPI50R140CP-DTE.pdf
IPI50R140CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI50R199CPXKSA1 IPI50R199CP-DTE.pdf
IPI50R199CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI50R250CPXKSA1 IPI50R250CP-DTE.pdf
IPI50R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI50R350CPXKSA1 IPI50R350CP-DTE.pdf
IPI50R350CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; 89W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 89W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI50R399CPXKSA1 Infineon-IPI50R399CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01238500e97f659a
Hersteller: INFINEON TECHNOLOGIES
IPI50R399CPXKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPI50R399CPXKSA2 Infineon-IPI50R399CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01238500e97f659a
Hersteller: INFINEON TECHNOLOGIES
IPI50R399CPXKSA2 THT N channel transistors
Produkt ist nicht verfügbar
IPI530N15N3GXKSA1 IPI530N15N3G-DTE.pdf
IPI530N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Technology: OptiMOS™ 3
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Power dissipation: 68W
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI60R099CPXKSA1 IPI60R099CP-DTE.pdf
IPI60R099CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO262-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO262-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 500 Stücke
Produkt ist nicht verfügbar
IPI60R125CPXKSA1 IPI60R125CP-DTE.pdf
IPI60R125CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI60R165CPAKSA1 IPI60R165CP-DTE.pdf
IPI60R165CPAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI60R190C6XKSA1 IPI60R190C6-DTE.pdf
IPI60R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.7 EUR
18+ 3.98 EUR
100+ 2.82 EUR
Mindestbestellmenge: 16
IPI60R250CPAKSA1 IPI60R250CP-DTE.pdf
IPI60R250CPAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI60R280C6XKSA1 IPI60R280C6-DTE.pdf
IPI60R280C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO262-3
Case: PG-TO262-3
Drain-source voltage: 600V
Drain current: 13.8A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI60R380C6XKSA1 IPI60R380C6-DTE.pdf
IPI60R380C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R099C6XKSA1 IPI65R099C6-DTE.pdf
IPI65R099C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R110CFDXKSA1 IPI65R110CFD-DTE.pdf
IPI65R110CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R150CFDXKSA1 IPI65R150CFD-DTE.pdf
IPI65R150CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Drain-source voltage: 650V
Drain current: 22.4A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 195.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R190C6XKSA1 IPI65R190C6-DTE.pdf
IPI65R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R190CFDXKSA1 IPI65R190CFD-DTE.pdf
IPI65R190CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R280C6XKSA1 IPI65R280C6-DTE.pdf
IPI65R280C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R280E6XKSA1 IPI65R280E6-DTE.pdf
IPI65R280E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R310CFDXKSA1 IPI65R310CFD-DTE.pdf
IPI65R310CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO262-3
Drain-source voltage: 650V
Drain current: 11.4A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104.2W
Polarisation: unipolar
Case: PG-TO262-3
Mounting: THT
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R380C6XKSA1 IPI65R380C6-DTE.pdf
IPI65R380C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R420CFDXKSA1 IPI65R420CFD-DTE.pdf
IPI65R420CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3
Technology: CoolMOS™
Case: PG-TO262-3
Mounting: THT
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPI65R600C6XKSA1 DS_2156_IPx65R600C6.pdf IPI65R600C6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ac1eb91012ac744ef772c60
Hersteller: INFINEON TECHNOLOGIES
IPI65R600C6XKSA1 THT N channel transistors
Produkt ist nicht verfügbar
IPI80N06S407AKSA2 IPI80N06S407AKSA2.pdf
IPI80N06S407AKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 58A; Idm: 320A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 58A
Pulsed drain current: 320A
Power dissipation: 79W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 27nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 418 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
28+2.65 EUR
30+ 2.39 EUR
36+ 2.02 EUR
38+ 1.9 EUR
250+ 1.83 EUR
Mindestbestellmenge: 28
IPI90R800C3XKSA1 IPI90R800C3XKSA1-DTE.pdf
IPI90R800C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 404 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
53+1.36 EUR
57+ 1.27 EUR
Mindestbestellmenge: 53
IPL60R065P7AUMA1 Infineon-IPL60R065P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebece9815b36
Hersteller: INFINEON TECHNOLOGIES
IPL60R065P7 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R075CFD7 IPL60R075CFD7.pdf
IPL60R075CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 189W; PG-VSON-4
Mounting: SMD
Case: PG-VSON-4
Power dissipation: 189W
Polarisation: unipolar
Gate charge: 67nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Technology: OptiMOS™
Drain-source voltage: 600V
Drain current: 21A
On-state resistance: 0.149Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R085P7AUMA1 Infineon-IPL60R085P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed1c9c5b3f
Hersteller: INFINEON TECHNOLOGIES
IPL60R085P7 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R104C7AUMA1 IPL60R104C7.pdf
IPL60R104C7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R105P7AUMA1 IPL60R105P7.pdf
IPL60R105P7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 137W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 137W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R125P7AUMA1 IPL60R125P7.pdf
IPL60R125P7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R180P6AUMA1 IPL60R180P6-DTE.pdf
IPL60R180P6AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.4A
Power dissipation: 176W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R185CFD7
Hersteller: INFINEON TECHNOLOGIES
IPL60R185CFD7 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R199CPAUMA1 IPL60R199CP-DTE.pdf
IPL60R199CPAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.4A; 139W; PG-VSON-4
Mounting: SMD
Case: PG-VSON-4
Drain-source voltage: 600V
Drain current: 16.4A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R1K5C6SATMA1 DS_IPL60R1K5C6S_2_0.pdf?fileId=5546d4614755559a01475d637950016b
Hersteller: INFINEON TECHNOLOGIES
IPL60R1K5C6SATMA1 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R210P6AUMA1 IPL60R210P6-DTE.pdf
IPL60R210P6AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R285P7AUMA1 Infineon-IPL60R285P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed0cea5b3c
Hersteller: INFINEON TECHNOLOGIES
IPL60R285P7 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R299CPAUMA1 IPL60R299CP_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043284aacd801285d1c1c8e27f4
Hersteller: INFINEON TECHNOLOGIES
IPL60R299CPAUMA1 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R2K1C6SATMA1 DS_IPL60R2K1C6S_2_0.pdf?fileId=5546d4614755559a01475e3d01ca041b
Hersteller: INFINEON TECHNOLOGIES
IPL60R2K1C6SATMA1 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R365P7AUMA1 Infineon-IPL60R365P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5be57abf3cc0
Hersteller: INFINEON TECHNOLOGIES
IPL60R365P7 SMD N channel transistors
Produkt ist nicht verfügbar
IPL60R385CPAUMA1 IPL60R385CP-DTE.pdf
IPL60R385CPAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL60R650P6SATMA1 IPL60R650P6S-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; 56.8W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Power dissipation: 56.8W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL65R070C7AUMA1 Infineon-IPL65R070C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f091901e6b3d
Hersteller: INFINEON TECHNOLOGIES
IPL65R070C7AUMA1 SMD N channel transistors
Produkt ist nicht verfügbar
IPL65R099C7AUMA1 IPL65R099C7-DTE.pdf
IPL65R099C7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL65R130C7AUMA1 IPL65R130C7-DTE.pdf
IPL65R130C7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; 102W; PG-VSON-4
Mounting: SMD
Case: PG-VSON-4
Power dissipation: 102W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 15A
On-state resistance: 0.13Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
IPL65R165CFDAUMA1 IPL65R165CFD-DTE.pdf
IPL65R165CFDAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.3A
Power dissipation: 195W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
IPL65R190E6AUMA1 IPL65R190E6-DTE.pdf
IPL65R190E6AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPL65R195C7AUMA1 Infineon-IPL65R195C7-DS-v02_00-en.pdf?fileId=5546d46145da30e80145f07420a26b18
Hersteller: INFINEON TECHNOLOGIES
IPL65R195C7AUMA1 SMD N channel transistors
Produkt ist nicht verfügbar
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