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IPT015N10N5ATMA1 IPT015N10N5ATMA1 INFINEON TECHNOLOGIES IPT015N10N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
IPT020N10N3ATMA1 IPT020N10N3ATMA1 INFINEON TECHNOLOGIES IPT020N10N3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPT029N08N5ATMA1 IPT029N08N5ATMA1 INFINEON TECHNOLOGIES IPT029N08N5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Case: PG-HSOF-8
Mounting: SMD
Kind of package: tape
Pulsed drain current: 676A
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 70nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPT059N15N3ATMA1 IPT059N15N3ATMA1 INFINEON TECHNOLOGIES IPT059N15N3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; Idm: 620A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPT210N25NFDATMA1 IPT210N25NFDATMA1 INFINEON TECHNOLOGIES IPT210N25NFD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 54A; Idm: 276A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 54A
Pulsed drain current: 276A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
IPT60R022S7XTMA1 INFINEON TECHNOLOGIES IPT60R022S7XTMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 31nC
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: PG-HSOF-8
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
IPT60R040S7XTMA1 IPT60R040S7XTMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 13A; Idm: 207A
Mounting: THT
On-state resistance: 84mΩ
Type of transistor: N-MOSFET
Power dissipation: 245W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 207A
Case: TO220
Drain-source voltage: 600V
Drain current: 13A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
IPT60R065S7XTMA1 IPT60R065S7XTMA1 INFINEON TECHNOLOGIES Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Drain-source voltage: 600V
Drain current: 8A
On-state resistance: 137mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 126A
Mounting: THT
Case: TO220
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
IPU50R1K4CEBKMA1 IPU50R1K4CEBKMA1 INFINEON TECHNOLOGIES IPU50R1K4CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Case: IPAK
Mounting: THT
Kind of package: tube
On-state resistance: 1.4Ω
Drain current: 3.1A
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Power dissipation: 25W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPU80R1K0CEBKMA1 IPU80R1K0CEBKMA1 INFINEON TECHNOLOGIES IPU80R1K0CE-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 948 Stücke:
Lieferzeit 7-14 Tag (e)
91+0.79 EUR
94+ 0.76 EUR
Mindestbestellmenge: 91
IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 INFINEON TECHNOLOGIES IPU80R1K2P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 438 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
86+ 0.84 EUR
96+ 0.75 EUR
111+ 0.65 EUR
117+ 0.61 EUR
Mindestbestellmenge: 76
IPU80R1K4P7AKMA1 IPU80R1K4P7AKMA1 INFINEON TECHNOLOGIES IPU80R1K4P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1203 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
93+ 0.78 EUR
106+ 0.68 EUR
122+ 0.59 EUR
129+ 0.56 EUR
Mindestbestellmenge: 76
IPU80R2K0P7AKMA1 IPU80R2K0P7AKMA1 INFINEON TECHNOLOGIES IPU80R2K0P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
5+ 14.3 EUR
18+ 3.98 EUR
49+ 1.46 EUR
IPU80R2K4P7AKMA1 IPU80R2K4P7AKMA1 INFINEON TECHNOLOGIES IPU80R2K4P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 22W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: THT
Gate charge: 8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPU80R3K3P7AKMA1 IPU80R3K3P7AKMA1 INFINEON TECHNOLOGIES IPU80R3K3P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.3A
Power dissipation: 18W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPU80R4K5P7AKMA1 IPU80R4K5P7AKMA1 INFINEON TECHNOLOGIES IPU80R4K5P7AKMA1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 2.6A; 13W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Pulsed drain current: 2.6A
Power dissipation: 13W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1469 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.62 EUR
81+ 0.88 EUR
107+ 0.67 EUR
114+ 0.63 EUR
Mindestbestellmenge: 45
IPU80R600P7AKMA1 IPU80R600P7AKMA1 INFINEON TECHNOLOGIES IPU80R600P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
8+8.94 EUR
19+ 3.76 EUR
25+ 2.86 EUR
Mindestbestellmenge: 8
IPU80R750P7AKMA1 IPU80R750P7AKMA1 INFINEON TECHNOLOGIES IPU80R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPU80R900P7AKMA1 IPU80R900P7AKMA1 INFINEON TECHNOLOGIES IPU80R900P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 344 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.12 EUR
72+ 1 EUR
93+ 0.77 EUR
99+ 0.73 EUR
Mindestbestellmenge: 65
IPU95R1K2P7AKMA1 IPU95R1K2P7AKMA1 INFINEON TECHNOLOGIES IPU95R1K2P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPU95R2K0P7AKMA1 IPU95R2K0P7AKMA1 INFINEON TECHNOLOGIES IPU95R2K0P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; IPAK
Type of transistor: N-MOSFET
Case: IPAK
Mounting: THT
Power dissipation: 37W
Technology: CoolMOS™ P7
Features of semiconductor devices: ESD protected gate
Kind of package: tube
Gate charge: 10nC
Polarisation: unipolar
Drain current: 2.4A
Kind of channel: enhanced
Drain-source voltage: 950V
On-state resistance: 2Ω
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1271 Stücke:
Lieferzeit 7-14 Tag (e)
74+0.97 EUR
100+ 0.72 EUR
107+ 0.67 EUR
109+ 0.66 EUR
114+ 0.63 EUR
Mindestbestellmenge: 74
IPU95R3K7P7AKMA1 INFINEON TECHNOLOGIES Infineon-IPU95R3K7P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c3bd81e57e6 IPU95R3K7P7 THT N channel transistors
Produkt ist nicht verfügbar
IPU95R450P7AKMA1 IPU95R450P7AKMA1 INFINEON TECHNOLOGIES IPU95R450P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; IPAK
Mounting: THT
Drain-source voltage: 950V
Drain current: 8.6A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: IPAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPU95R750P7AKMA1 IPU95R750P7AKMA1 INFINEON TECHNOLOGIES IPU95R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK
Mounting: THT
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: IPAK
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW50R280CEFKSA1 IPW50R280CEFKSA1 INFINEON TECHNOLOGIES IPW50R280CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 92W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 92W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R031CFD7 IPW60R031CFD7 INFINEON TECHNOLOGIES IPW60R031CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
2+35.75 EUR
4+ 17.88 EUR
30+ 13.9 EUR
Mindestbestellmenge: 2
IPW60R037CSFDXKSA1 INFINEON TECHNOLOGIES IPW60R037CSFDXKSA1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R037P7XKSA1 IPW60R037P7XKSA1 INFINEON TECHNOLOGIES IPW60R037P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.84 EUR
6+ 11.91 EUR
Mindestbestellmenge: 3
IPW60R040C7XKSA1 IPW60R040C7XKSA1 INFINEON TECHNOLOGIES IPW60R040C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R041C6FKSA1 IPW60R041C6FKSA1 INFINEON TECHNOLOGIES IPW60R041C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
4+18.86 EUR
5+ 17.83 EUR
Mindestbestellmenge: 4
IPW60R041P6FKSA1 IPW60R041P6FKSA1 INFINEON TECHNOLOGIES IPW60R041P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R045CPFKSA1 IPW60R045CPFKSA1 INFINEON TECHNOLOGIES IPW60R045CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R070C6FKSA1 IPW60R070C6FKSA1 INFINEON TECHNOLOGIES IPW60R070C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R070CFD7 IPW60R070CFD7 INFINEON TECHNOLOGIES IPW60R070CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R070P6XKSA1 IPW60R070P6XKSA1 INFINEON TECHNOLOGIES IPW60R070P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R075CPFKSA1 IPW60R075CPFKSA1 INFINEON TECHNOLOGIES IPW60R075CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R080P7 IPW60R080P7 INFINEON TECHNOLOGIES IPW60R080P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R099C6FKSA1 IPW60R099C6FKSA1 INFINEON TECHNOLOGIES IPW60R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R099C7XKSA1 IPW60R099C7XKSA1 INFINEON TECHNOLOGIES IPW60R099C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R099CPFKSA1 IPW60R099CPFKSA1 INFINEON TECHNOLOGIES IPW60R099CP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R099P6XKSA1 IPW60R099P6XKSA1 INFINEON TECHNOLOGIES IPW60R099P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R125C6FKSA1 IPW60R125C6FKSA1 INFINEON TECHNOLOGIES IPW60R125C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R125CPFKSA1 IPW60R125CPFKSA1 INFINEON TECHNOLOGIES IPW60R125CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R125P6XKSA1 IPW60R125P6XKSA1 INFINEON TECHNOLOGIES IPW60R125P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R160C6FKSA1 IPW60R160C6FKSA1 INFINEON TECHNOLOGIES IPW60R160C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R160P6FKSA1 IPW60R160P6FKSA1 INFINEON TECHNOLOGIES IPW60R160P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R165CPFKSA1 IPW60R165CPFKSA1 INFINEON TECHNOLOGIES IPW60R165CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R170CFD7 IPW60R170CFD7 INFINEON TECHNOLOGIES IPW60R170CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R180C7XKSA1 IPW60R180C7XKSA1 INFINEON TECHNOLOGIES IPW60R180C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R180P7XKSA1 IPW60R180P7XKSA1 INFINEON TECHNOLOGIES IPW60R180P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R190C6FKSA1 IPW60R190C6FKSA1 INFINEON TECHNOLOGIES IPW60R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Mounting: THT
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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IPW60R190E6FKSA1 IPW60R190E6FKSA1 INFINEON TECHNOLOGIES IPW60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Mounting: THT
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ E6
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R190P6FKSA1 IPW60R190P6FKSA1 INFINEON TECHNOLOGIES IPW60R190P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Mounting: THT
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ P6
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R199CPFKSA1 IPW60R199CPFKSA1 INFINEON TECHNOLOGIES IPW60R199CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO247-3
Mounting: THT
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R280C6FKSA1 IPW60R280C6FKSA1 INFINEON TECHNOLOGIES IPW60R280C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R280E6FKSA1 IPW60R280E6FKSA1 INFINEON TECHNOLOGIES IPW60R280E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R280P6FKSA1 IPW60R280P6FKSA1 INFINEON TECHNOLOGIES IPW60R280P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 60 Stücke
Produkt ist nicht verfügbar
IPW60R299CPFKSA1 IPW60R299CPFKSA1 INFINEON TECHNOLOGIES IPW60R299CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 98W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 98W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R330P6FKSA1 IPW60R330P6FKSA1 INFINEON TECHNOLOGIES IPW60R330P6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 93W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW65R019C7FKSA1 IPW65R019C7FKSA1 INFINEON TECHNOLOGIES IPW65R019C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Power dissipation: 446W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPT015N10N5ATMA1 IPT015N10N5-DTE.pdf
IPT015N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
IPT020N10N3ATMA1 IPT020N10N3-DTE.pdf
IPT020N10N3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPT029N08N5ATMA1 IPT029N08N5.pdf
IPT029N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Case: PG-HSOF-8
Mounting: SMD
Kind of package: tape
Pulsed drain current: 676A
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 70nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPT059N15N3ATMA1 IPT059N15N3-DTE.pdf
IPT059N15N3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; Idm: 620A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPT210N25NFDATMA1 IPT210N25NFD.pdf
IPT210N25NFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 54A; Idm: 276A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 54A
Pulsed drain current: 276A
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
IPT60R022S7XTMA1 IPT60R022S7XTMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 31nC
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: PG-HSOF-8
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
IPT60R040S7XTMA1
IPT60R040S7XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 13A; Idm: 207A
Mounting: THT
On-state resistance: 84mΩ
Type of transistor: N-MOSFET
Power dissipation: 245W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 207A
Case: TO220
Drain-source voltage: 600V
Drain current: 13A
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
IPT60R065S7XTMA1 Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a
IPT60R065S7XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Drain-source voltage: 600V
Drain current: 8A
On-state resistance: 137mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 126A
Mounting: THT
Case: TO220
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
IPU50R1K4CEBKMA1 IPU50R1K4CE-DTE.pdf
IPU50R1K4CEBKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Case: IPAK
Mounting: THT
Kind of package: tube
On-state resistance: 1.4Ω
Drain current: 3.1A
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Power dissipation: 25W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPU80R1K0CEBKMA1 IPU80R1K0CE-dte.pdf
IPU80R1K0CEBKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 83W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 948 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
91+0.79 EUR
94+ 0.76 EUR
Mindestbestellmenge: 91
IPU80R1K2P7AKMA1 IPU80R1K2P7.pdf
IPU80R1K2P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 438 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
86+ 0.84 EUR
96+ 0.75 EUR
111+ 0.65 EUR
117+ 0.61 EUR
Mindestbestellmenge: 76
IPU80R1K4P7AKMA1 IPU80R1K4P7.pdf
IPU80R1K4P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Power dissipation: 32W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1203 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
93+ 0.78 EUR
106+ 0.68 EUR
122+ 0.59 EUR
129+ 0.56 EUR
Mindestbestellmenge: 76
IPU80R2K0P7AKMA1 IPU80R2K0P7.pdf
IPU80R2K0P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
5+ 14.3 EUR
18+ 3.98 EUR
49+ 1.46 EUR
IPU80R2K4P7AKMA1 IPU80R2K4P7.pdf
IPU80R2K4P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 22W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Power dissipation: 22W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: THT
Gate charge: 8nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPU80R3K3P7AKMA1 IPU80R3K3P7.pdf
IPU80R3K3P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 18W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.3A
Power dissipation: 18W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPU80R4K5P7AKMA1 IPU80R4K5P7AKMA1.pdf
IPU80R4K5P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 2.6A; 13W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Pulsed drain current: 2.6A
Power dissipation: 13W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: THT
Gate charge: 4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1469 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
45+1.62 EUR
81+ 0.88 EUR
107+ 0.67 EUR
114+ 0.63 EUR
Mindestbestellmenge: 45
IPU80R600P7AKMA1 IPU80R600P7.pdf
IPU80R600P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 60W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.5A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+8.94 EUR
19+ 3.76 EUR
25+ 2.86 EUR
Mindestbestellmenge: 8
IPU80R750P7AKMA1 IPU80R750P7.pdf
IPU80R750P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPU80R900P7AKMA1 IPU80R900P7.pdf
IPU80R900P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 344 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
65+1.12 EUR
72+ 1 EUR
93+ 0.77 EUR
99+ 0.73 EUR
Mindestbestellmenge: 65
IPU95R1K2P7AKMA1 IPU95R1K2P7.pdf
IPU95R1K2P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 52W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPU95R2K0P7AKMA1 IPU95R2K0P7.pdf
IPU95R2K0P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; IPAK
Type of transistor: N-MOSFET
Case: IPAK
Mounting: THT
Power dissipation: 37W
Technology: CoolMOS™ P7
Features of semiconductor devices: ESD protected gate
Kind of package: tube
Gate charge: 10nC
Polarisation: unipolar
Drain current: 2.4A
Kind of channel: enhanced
Drain-source voltage: 950V
On-state resistance: 2Ω
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1271 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
74+0.97 EUR
100+ 0.72 EUR
107+ 0.67 EUR
109+ 0.66 EUR
114+ 0.63 EUR
Mindestbestellmenge: 74
IPU95R3K7P7AKMA1 Infineon-IPU95R3K7P7-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb01643c3bd81e57e6
Hersteller: INFINEON TECHNOLOGIES
IPU95R3K7P7 THT N channel transistors
Produkt ist nicht verfügbar
IPU95R450P7AKMA1 IPU95R450P7.pdf
IPU95R450P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; IPAK
Mounting: THT
Drain-source voltage: 950V
Drain current: 8.6A
On-state resistance: 0.45Ω
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: IPAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPU95R750P7AKMA1 IPU95R750P7.pdf
IPU95R750P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK
Mounting: THT
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: IPAK
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW50R280CEFKSA1 IPW50R280CE-DTE.pdf
IPW50R280CEFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 92W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 92W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R031CFD7 IPW60R031CFD7.pdf
IPW60R031CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+35.75 EUR
4+ 17.88 EUR
30+ 13.9 EUR
Mindestbestellmenge: 2
IPW60R037CSFDXKSA1 IPW60R037CSFDXKSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R037P7XKSA1 IPW60R037P7.pdf
IPW60R037P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
3+23.84 EUR
6+ 11.91 EUR
Mindestbestellmenge: 3
IPW60R040C7XKSA1 IPW60R040C7-DTE.pdf
IPW60R040C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R041C6FKSA1 IPW60R041C6-DTE.pdf
IPW60R041C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+18.86 EUR
5+ 17.83 EUR
Mindestbestellmenge: 4
IPW60R041P6FKSA1 IPW60R041P6-DTE.pdf
IPW60R041P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R045CPFKSA1 IPW60R045CP-DTE.pdf
IPW60R045CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R070C6FKSA1 IPW60R070C6-DTE.pdf
IPW60R070C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R070CFD7 IPW60R070CFD7.pdf
IPW60R070CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R070P6XKSA1 IPW60R070P6-DTE.pdf
IPW60R070P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R075CPFKSA1 IPW60R075CP-DTE.pdf
IPW60R075CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R080P7 IPW60R080P7.pdf
IPW60R080P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R099C6FKSA1 IPW60R099C6-DTE.pdf
IPW60R099C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R099C7XKSA1 IPW60R099C7-DTE.pdf
IPW60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R099CPFKSA1 IPW60R099CP.pdf
IPW60R099CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R099P6XKSA1 IPW60R099P6-DTE.pdf
IPW60R099P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R125C6FKSA1 IPW60R125C6-DTE.pdf
IPW60R125C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R125CPFKSA1 IPW60R125CP-DTE.pdf
IPW60R125CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R125P6XKSA1 IPW60R125P6-DTE.pdf
IPW60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R160C6FKSA1 IPW60R160C6-DTE.pdf
IPW60R160C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R160P6FKSA1 IPW60R160P6-DTE.pdf
IPW60R160P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R165CPFKSA1 IPW60R165CP-DTE.pdf
IPW60R165CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R170CFD7 IPW60R170CFD7.pdf
IPW60R170CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R180C7XKSA1 IPW60R180C7-DTE.pdf
IPW60R180C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 68W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 68W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R180P7XKSA1 IPW60R180P7.pdf
IPW60R180P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R190C6FKSA1 IPW60R190C6-DTE.pdf
IPW60R190C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Mounting: THT
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+4.06 EUR
20+ 3.59 EUR
24+ 3.1 EUR
25+ 2.93 EUR
120+ 2.89 EUR
Mindestbestellmenge: 18
IPW60R190E6FKSA1 IPW60R190E6-DTE.pdf
IPW60R190E6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Mounting: THT
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ E6
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R190P6FKSA1 IPW60R190P6-DTE.pdf
IPW60R190P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Mounting: THT
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ P6
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R199CPFKSA1 IPW60R199CP-DTE.pdf
IPW60R199CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO247-3
Mounting: THT
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R280C6FKSA1 IPW60R280C6-DTE.pdf
IPW60R280C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R280E6FKSA1 IPW60R280E6-DTE.pdf
IPW60R280E6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R280P6FKSA1 IPW60R280P6-DTE.pdf
IPW60R280P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 60 Stücke
Produkt ist nicht verfügbar
IPW60R299CPFKSA1 IPW60R299CP-DTE.pdf
IPW60R299CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 98W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 98W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW60R330P6FKSA1 IPW60R330P6.pdf
IPW60R330P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 93W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPW65R019C7FKSA1 IPW65R019C7-DTE.pdf
IPW65R019C7FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; 446W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Power dissipation: 446W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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