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IRFR2405TRLPBF IRFR2405TRLPBF INFINEON TECHNOLOGIES irfr2405pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFR2405TRPBF IRFR2405TRPBF INFINEON TECHNOLOGIES irfr2405pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFR2407TRPBF IRFR2407TRPBF INFINEON TECHNOLOGIES irfr2407pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7606TRPBF IRF7606TRPBF INFINEON TECHNOLOGIES irf7606pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.8W; Micro8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.8W
Case: Micro8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP019N08NF2SAKMA1 INFINEON TECHNOLOGIES IPP019N08NF2S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Pulsed drain current: 764A
Drain-source voltage: 80V
Drain current: 147A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 124nC
Technology: StrongIRFET™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
IPP034N08N5AKSA1 IPP034N08N5AKSA1 INFINEON TECHNOLOGIES IPP034N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP039N04LGXKSA1 IPP039N04LGXKSA1 INFINEON TECHNOLOGIES IPP039N04LG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain current: 80A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.46 EUR
Mindestbestellmenge: 16
IPP048N12N3GXKSA1 IPP048N12N3GXKSA1 INFINEON TECHNOLOGIES IPP048N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.49 EUR
23+ 3.23 EUR
27+ 2.69 EUR
29+ 2.55 EUR
Mindestbestellmenge: 21
IPP04CN10NGXKSA1 IPP04CN10NGXKSA1 INFINEON TECHNOLOGIES IPP04CN10NG.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP05CN10NGXKSA1 INFINEON TECHNOLOGIES Infineon-IPP05CN10N-DS-v01_02-en.pdf?fileId=db3a30432313ff5e012393ad8dec03e7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPD12CN10NGATMA1 IPD12CN10NGATMA1 INFINEON TECHNOLOGIES IPD12CN10NG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Mounting: SMD
Power dissipation: 125W
Type of transistor: N-MOSFET
On-state resistance: 12.4mΩ
Drain current: 67A
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhanced
Case: PG-TO252-3
Gate-source voltage: ±20V
Technology: OptiMOS™ 2
auf Bestellung 2143 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.9 EUR
44+ 1.63 EUR
57+ 1.27 EUR
60+ 1.2 EUR
500+ 1.17 EUR
Mindestbestellmenge: 38
IPP120N20NFDAKSA1 IPP120N20NFDAKSA1 INFINEON TECHNOLOGIES IPP120N20NFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.05 EUR
14+ 5.21 EUR
15+ 4.92 EUR
Mindestbestellmenge: 9
IPD70R600P7SAUMA1 IPD70R600P7SAUMA1 INFINEON TECHNOLOGIES IPD70R600P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; 43.1W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Power dissipation: 43.1W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPD90N04S304ATMA1 IPD90N04S304ATMA1 INFINEON TECHNOLOGIES IPD90N04S304.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPD90N04S404ATMA1 IPD90N04S404ATMA1 INFINEON TECHNOLOGIES IPD90N04S404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Pulsed drain current: 360A
Power dissipation: 71W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 2405 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.53 EUR
52+ 1.39 EUR
67+ 1.07 EUR
72+ 1 EUR
Mindestbestellmenge: 47
IRLS3813TRLPBF IRLS3813TRLPBF INFINEON TECHNOLOGIES IRLS3813TRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 156A; 195W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 156A
Power dissipation: 195W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPAN60R125PFD7SXKSA1 IPAN60R125PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
BTF3035EJXUMA1 INFINEON TECHNOLOGIES BTF3035EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.75W
Technology: HITFET®
Kind of integrated circuit: low-side
Case: PG-TDSO-8-31
Supply voltage: 3...5.5V DC
On-state resistance: 32mΩ
Turn-on time: 1.35µs
Turn-off time: 2µs
Output voltage: 40V
Output current: 5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Produkt ist nicht verfügbar
BTS3035TF BTS3035TF INFINEON TECHNOLOGIES BTS3035TF.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
auf Bestellung 1170 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
39+ 1.86 EUR
41+ 1.74 EUR
62+ 1.16 EUR
66+ 1.09 EUR
1000+ 1.04 EUR
Mindestbestellmenge: 36
IAUA200N04S5N010AUMA1 INFINEON TECHNOLOGIES IAUA200N04S5N010.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Pulsed drain current: 800A
Power dissipation: 167W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
IRFR8314TRPBF IRFR8314TRPBF INFINEON TECHNOLOGIES IRFR8314TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 127A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 321 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.57 EUR
56+ 1.29 EUR
84+ 0.86 EUR
90+ 0.8 EUR
Mindestbestellmenge: 46
IPA80R900P7XKSA1 IPA80R900P7XKSA1 INFINEON TECHNOLOGIES IPA80R900P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Version: ESD
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
51+ 1.42 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 45
IPN80R900P7ATMA1 IPN80R900P7ATMA1 INFINEON TECHNOLOGIES IPN80R900P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Power dissipation: 7W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 15nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
BSC030N08NS5ATMA1 BSC030N08NS5ATMA1 INFINEON TECHNOLOGIES BSC030N08NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IAUZ30N08S5N186ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7A
Pulsed drain current: 120A
Power dissipation: 41W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 22.7mΩ
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPB030N08N3GATMA1 IPB030N08N3GATMA1 INFINEON TECHNOLOGIES IPB030N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 160A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Produkt ist nicht verfügbar
IPI030N10N3GXKSA1 IPI030N10N3GXKSA1 INFINEON TECHNOLOGIES IPI030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSC030N03LSGATMA1 BSC030N03LSGATMA1 INFINEON TECHNOLOGIES BSC030N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 98A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSC030N03MSGATMA1 BSC030N03MSGATMA1 INFINEON TECHNOLOGIES BSC030N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSC039N06NS BSC039N06NS INFINEON TECHNOLOGIES BSC039N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPA50R140CPXKSA1 IPA50R140CPXKSA1 INFINEON TECHNOLOGIES IPA50R140CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.54 EUR
13+ 5.66 EUR
14+ 5.35 EUR
Mindestbestellmenge: 11
IPA50R190CEXKSA2 IPA50R190CEXKSA2 INFINEON TECHNOLOGIES IPA50R190CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPA50R199CPXKSA1 IPA50R199CPXKSA1 INFINEON TECHNOLOGIES IPA50R199CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
IPB50R140CPATMA1 IPB50R140CPATMA1 INFINEON TECHNOLOGIES IPB50R140CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.1A
Power dissipation: 25W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPB50R199CPATMA1 IPB50R199CPATMA1 INFINEON TECHNOLOGIES IPB50R199CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
IPP50R140CPXKSA1 IPP50R140CPXKSA1 INFINEON TECHNOLOGIES IPP50R140CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPA50R250CPXKSA1 IPA50R250CPXKSA1 INFINEON TECHNOLOGIES IPA50R250CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.32 EUR
32+ 2.29 EUR
34+ 2.16 EUR
Mindestbestellmenge: 22
IPP50R250CPXKSA1 IPP50R250CPXKSA1 INFINEON TECHNOLOGIES IPP50R250CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.12 EUR
27+ 2.75 EUR
30+ 2.39 EUR
32+ 2.25 EUR
Mindestbestellmenge: 23
BAS3005B02VH6327XTSA1 BAS3005B02VH6327XTSA1 INFINEON TECHNOLOGIES BAS3005B02VH6327XT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SC79
Mounting: SMD
Case: SC79
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
auf Bestellung 2771 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
309+ 0.23 EUR
468+ 0.15 EUR
596+ 0.12 EUR
633+ 0.11 EUR
Mindestbestellmenge: 239
T1901N80TOHXPSA1 INFINEON TECHNOLOGIES T1901N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 8kV; Ifmax: 3.3kA; 2.1kA; Igt: 350mA
Case: BG-T15035K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. off-state voltage: 8kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 350mA
Max. forward impulse current: 67kA
Load current: 2.1kA
Max. load current: 3.3kA
Type of thyristor: hockey-puck
Produkt ist nicht verfügbar
IPP60R385CPXKSA1 IPP60R385CPXKSA1 INFINEON TECHNOLOGIES IPP60R385CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
BTS5012SDA  BTS5012SDA  INFINEON TECHNOLOGIES BTS5012SDA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 6A
Case: TO252-5
Mounting: SMD
Number of channels: 1
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
auf Bestellung 1064 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.16 EUR
20+ 3.59 EUR
29+ 2.47 EUR
31+ 2.35 EUR
Mindestbestellmenge: 18
IRLH5030TRPBF IRLH5030TRPBF INFINEON TECHNOLOGIES irlh5030pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IDH08G65C5 IDH08G65C5 INFINEON TECHNOLOGIES Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; 76W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 60A
Leakage current: 1.6µA
Power dissipation: 76W
Kind of package: tube
Heatsink thickness: 1.17...137mm
Produkt ist nicht verfügbar
IPA029N06NM5SXKSA1 IPA029N06NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA029N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd953036de6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 348A; 38W; TO220FP
Mounting: THT
Drain current: 62A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 348A
Case: TO220FP
Drain-source voltage: 60V
Produkt ist nicht verfügbar
IPA029N06NXKSA1 IPA029N06NXKSA1 INFINEON TECHNOLOGIES IPA029N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 38W; TO220FP
Mounting: THT
Drain current: 84A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: 60V
Produkt ist nicht verfügbar
IRFP7537PBF IRFP7537PBF INFINEON TECHNOLOGIES irfp7537pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC
Mounting: THT
Kind of package: tube
Gate charge: 142nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
Case: TO247AC
Drain-source voltage: 60V
Drain current: 172A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.58 EUR
23+ 3.2 EUR
30+ 2.46 EUR
31+ 2.33 EUR
Mindestbestellmenge: 20
BTS5030-1EJA BTS5030-1EJA INFINEON TECHNOLOGIES BTS5030-1EJA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Technology: PROFET™+ 12V
Power dissipation: 1.9W
Case: PG-DSO-8
On-state resistance: 60mΩ
Mounting: SMD
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: high-side
Supply voltage: 5...28V DC
Type of integrated circuit: power switch
auf Bestellung 754 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.43 EUR
33+ 2.19 EUR
41+ 1.76 EUR
44+ 1.66 EUR
500+ 1.62 EUR
Mindestbestellmenge: 30
BTS5030-2EKA BTS5030-2EKA INFINEON TECHNOLOGIES BTS5030-2EKA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Technology: PROFET™+ 12V
Power dissipation: 2.1W
Case: PG-DSO-14
On-state resistance: 60mΩ
Mounting: SMD
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Kind of integrated circuit: high-side
Supply voltage: 5...28V DC
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
BTS5180-2EKA  BTS5180-2EKA  INFINEON TECHNOLOGIES BTS5180-2EKA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Mounting: SMD
Supply voltage: 8...18V DC
Kind of output: N-Channel
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Case: SO14
On-state resistance: 0.33Ω
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 2
auf Bestellung 1591 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.9 EUR
43+ 1.69 EUR
50+ 1.46 EUR
53+ 1.37 EUR
Mindestbestellmenge: 38
BTS6133D  BTS6133D  INFINEON TECHNOLOGIES BTS6133D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 33A
Case: TO252-5
Mounting: SMD
Number of channels: 1
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
auf Bestellung 1163 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.6 EUR
31+ 2.37 EUR
32+ 2.25 EUR
1000+ 2.23 EUR
Mindestbestellmenge: 20
BTS6143D BTS6143D INFINEON TECHNOLOGIES BTS6143D.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 3329 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.73 EUR
21+ 3.42 EUR
32+ 2.26 EUR
34+ 2.13 EUR
1000+ 2.1 EUR
2500+ 2.06 EUR
Mindestbestellmenge: 20
IPN80R2K4P7ATMA1 IPN80R2K4P7ATMA1 INFINEON TECHNOLOGIES IPN80R2K4P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Power dissipation: 6.3W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 8nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Drain current: 1.7A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IPN80R3K3P7ATMA1 IPN80R3K3P7ATMA1 INFINEON TECHNOLOGIES IPN80R3K3P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Power dissipation: 6.1W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 6nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Drain current: 1.3A
On-state resistance: 3.3Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IPN80R4K5P7ATMA1 IPN80R4K5P7ATMA1 INFINEON TECHNOLOGIES IPN80R4K5P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 6W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel
Kind of channel: enhanced
Version: ESD
auf Bestellung 2247 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
95+ 0.76 EUR
106+ 0.68 EUR
123+ 0.58 EUR
130+ 0.55 EUR
Mindestbestellmenge: 44
IPN80R600P7ATMA1 IPN80R600P7ATMA1 INFINEON TECHNOLOGIES IPN80R600P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Power dissipation: 7.4W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 20nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Drain current: 5.5A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IPN80R750P7ATMA1 IPN80R750P7ATMA1 INFINEON TECHNOLOGIES IPN80R750P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Mounting: SMD
Version: ESD
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 7.2W
Polarisation: unipolar
Kind of package: reel
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-SOT223
Produkt ist nicht verfügbar
IRGP4263DPBF IRGP4263DPBF INFINEON TECHNOLOGIES IRGP4263DPBF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Collector current: 90A
Type of transistor: IGBT
Power dissipation: 325W
Produkt ist nicht verfügbar
TT400N26KOF  TT400N26KOF  INFINEON TECHNOLOGIES TT400N26KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
IPP60R190E6XKSA1 IPP60R190E6XKSA1 INFINEON TECHNOLOGIES IPP60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ E6
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
IRFR2405TRLPBF irfr2405pbf.pdf
IRFR2405TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFR2405TRPBF description irfr2405pbf.pdf
IRFR2405TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFR2407TRPBF irfr2407pbf.pdf
IRFR2407TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7606TRPBF irf7606pbf.pdf
IRF7606TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.8W; Micro8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.8W
Case: Micro8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP019N08NF2SAKMA1 IPP019N08NF2S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Pulsed drain current: 764A
Drain-source voltage: 80V
Drain current: 147A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 124nC
Technology: StrongIRFET™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
IPP034N08N5AKSA1 IPP034N08N5-DTE.pdf
IPP034N08N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP039N04LGXKSA1 IPP039N04LG-DTE.pdf
IPP039N04LGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain current: 80A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
16+4.46 EUR
Mindestbestellmenge: 16
IPP048N12N3GXKSA1 IPP048N12N3G-DTE.pdf
IPP048N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
21+3.49 EUR
23+ 3.23 EUR
27+ 2.69 EUR
29+ 2.55 EUR
Mindestbestellmenge: 21
IPP04CN10NGXKSA1 IPP04CN10NG.pdf
IPP04CN10NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP05CN10NGXKSA1 Infineon-IPP05CN10N-DS-v01_02-en.pdf?fileId=db3a30432313ff5e012393ad8dec03e7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPD12CN10NGATMA1 IPD12CN10NG-DTE.pdf
IPD12CN10NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Mounting: SMD
Power dissipation: 125W
Type of transistor: N-MOSFET
On-state resistance: 12.4mΩ
Drain current: 67A
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhanced
Case: PG-TO252-3
Gate-source voltage: ±20V
Technology: OptiMOS™ 2
auf Bestellung 2143 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
38+1.9 EUR
44+ 1.63 EUR
57+ 1.27 EUR
60+ 1.2 EUR
500+ 1.17 EUR
Mindestbestellmenge: 38
IPP120N20NFDAKSA1 IPP120N20NFD-DTE.pdf
IPP120N20NFDAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
9+8.05 EUR
14+ 5.21 EUR
15+ 4.92 EUR
Mindestbestellmenge: 9
IPD70R600P7SAUMA1 IPD70R600P7S.pdf
IPD70R600P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; 43.1W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Power dissipation: 43.1W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPD90N04S304ATMA1 IPD90N04S304.pdf
IPD90N04S304ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPD90N04S404ATMA1 IPD90N04S404.pdf
IPD90N04S404ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Pulsed drain current: 360A
Power dissipation: 71W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 2405 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
47+1.53 EUR
52+ 1.39 EUR
67+ 1.07 EUR
72+ 1 EUR
Mindestbestellmenge: 47
IRLS3813TRLPBF IRLS3813TRLPBF.pdf
IRLS3813TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 156A; 195W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 156A
Power dissipation: 195W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPAN60R125PFD7SXKSA1 Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c
IPAN60R125PFD7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
BTF3035EJXUMA1 BTF3035EJ.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.75W
Technology: HITFET®
Kind of integrated circuit: low-side
Case: PG-TDSO-8-31
Supply voltage: 3...5.5V DC
On-state resistance: 32mΩ
Turn-on time: 1.35µs
Turn-off time: 2µs
Output voltage: 40V
Output current: 5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Produkt ist nicht verfügbar
BTS3035TF BTS3035TF.pdf
BTS3035TF
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
auf Bestellung 1170 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
36+2.03 EUR
39+ 1.86 EUR
41+ 1.74 EUR
62+ 1.16 EUR
66+ 1.09 EUR
1000+ 1.04 EUR
Mindestbestellmenge: 36
IAUA200N04S5N010AUMA1 IAUA200N04S5N010.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 800A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 200A
Pulsed drain current: 800A
Power dissipation: 167W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
IRFR8314TRPBF IRFR8314TRPBF.pdf
IRFR8314TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 127A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 321 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
46+1.57 EUR
56+ 1.29 EUR
84+ 0.86 EUR
90+ 0.8 EUR
Mindestbestellmenge: 46
IPA80R900P7XKSA1 IPA80R900P7.pdf
IPA80R900P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Version: ESD
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
45+1.62 EUR
51+ 1.42 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 45
IPN80R900P7ATMA1 IPN80R900P7.pdf
IPN80R900P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Power dissipation: 7W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 15nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
BSC030N08NS5ATMA1 BSC030N08NS5-DTE.pdf
BSC030N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IAUZ30N08S5N186ATMA1 Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7A
Pulsed drain current: 120A
Power dissipation: 41W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 22.7mΩ
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPB030N08N3GATMA1 IPB030N08N3G-DTE.pdf
IPB030N08N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 160A
On-state resistance: 3mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Produkt ist nicht verfügbar
IPI030N10N3GXKSA1 IPI030N10N3G-DTE.pdf
IPI030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSC030N03LSGATMA1 BSC030N03LSG-DTE.pdf
BSC030N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 98A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSC030N03MSGATMA1 BSC030N03MSG-DTE.pdf
BSC030N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSC039N06NS BSC039N06NS-DTE.pdf
BSC039N06NS
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPA50R140CPXKSA1 IPA50R140CP-DTE.pdf
IPA50R140CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+6.54 EUR
13+ 5.66 EUR
14+ 5.35 EUR
Mindestbestellmenge: 11
IPA50R190CEXKSA2 IPA50R190CE-DTE.pdf
IPA50R190CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.5A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPA50R199CPXKSA1 IPA50R199CP-DTE.pdf
IPA50R199CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
IPB50R140CPATMA1 IPB50R140CP-DTE.pdf
IPB50R140CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.1A
Power dissipation: 25W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPB50R199CPATMA1 IPB50R199CP-DTE.pdf
IPB50R199CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
IPP50R140CPXKSA1 IPP50R140CP-DTE.pdf
IPP50R140CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPA50R250CPXKSA1 IPA50R250CP-DTE.pdf
IPA50R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
22+3.32 EUR
32+ 2.29 EUR
34+ 2.16 EUR
Mindestbestellmenge: 22
IPP50R250CPXKSA1 IPP50R250CP-DTE.pdf
IPP50R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
23+3.12 EUR
27+ 2.75 EUR
30+ 2.39 EUR
32+ 2.25 EUR
Mindestbestellmenge: 23
BAS3005B02VH6327XTSA1 BAS3005B02VH6327XT.pdf
BAS3005B02VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.5A; SC79
Mounting: SMD
Case: SC79
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5A
auf Bestellung 2771 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
239+0.3 EUR
309+ 0.23 EUR
468+ 0.15 EUR
596+ 0.12 EUR
633+ 0.11 EUR
Mindestbestellmenge: 239
T1901N80TOHXPSA1 T1901N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 8kV; Ifmax: 3.3kA; 2.1kA; Igt: 350mA
Case: BG-T15035K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. off-state voltage: 8kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 350mA
Max. forward impulse current: 67kA
Load current: 2.1kA
Max. load current: 3.3kA
Type of thyristor: hockey-puck
Produkt ist nicht verfügbar
IPP60R385CPXKSA1 IPP60R385CP-DTE.pdf
IPP60R385CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
BTS5012SDA  BTS5012SDA.pdf
BTS5012SDA 
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 6A
Case: TO252-5
Mounting: SMD
Number of channels: 1
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
auf Bestellung 1064 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+4.16 EUR
20+ 3.59 EUR
29+ 2.47 EUR
31+ 2.35 EUR
Mindestbestellmenge: 18
IRLH5030TRPBF irlh5030pbf.pdf
IRLH5030TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IDH08G65C5
IDH08G65C5
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; 76W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 60A
Leakage current: 1.6µA
Power dissipation: 76W
Kind of package: tube
Heatsink thickness: 1.17...137mm
Produkt ist nicht verfügbar
IPA029N06NM5SXKSA1 Infineon-IPA029N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd953036de6
IPA029N06NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 348A; 38W; TO220FP
Mounting: THT
Drain current: 62A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 348A
Case: TO220FP
Drain-source voltage: 60V
Produkt ist nicht verfügbar
IPA029N06NXKSA1 IPA029N06N-DTE.pdf
IPA029N06NXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 38W; TO220FP
Mounting: THT
Drain current: 84A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: 60V
Produkt ist nicht verfügbar
IRFP7537PBF irfp7537pbf.pdf
IRFP7537PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC
Mounting: THT
Kind of package: tube
Gate charge: 142nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
Case: TO247AC
Drain-source voltage: 60V
Drain current: 172A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
20+3.58 EUR
23+ 3.2 EUR
30+ 2.46 EUR
31+ 2.33 EUR
Mindestbestellmenge: 20
BTS5030-1EJA BTS5030-1EJA.pdf
BTS5030-1EJA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Technology: PROFET™+ 12V
Power dissipation: 1.9W
Case: PG-DSO-8
On-state resistance: 60mΩ
Mounting: SMD
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Kind of integrated circuit: high-side
Supply voltage: 5...28V DC
Type of integrated circuit: power switch
auf Bestellung 754 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
30+2.43 EUR
33+ 2.19 EUR
41+ 1.76 EUR
44+ 1.66 EUR
500+ 1.62 EUR
Mindestbestellmenge: 30
BTS5030-2EKA BTS5030-2EKA.pdf
BTS5030-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Technology: PROFET™+ 12V
Power dissipation: 2.1W
Case: PG-DSO-14
On-state resistance: 60mΩ
Mounting: SMD
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Kind of integrated circuit: high-side
Supply voltage: 5...28V DC
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
BTS5180-2EKA  BTS5180-2EKA.pdf
BTS5180-2EKA 
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Mounting: SMD
Supply voltage: 8...18V DC
Kind of output: N-Channel
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Case: SO14
On-state resistance: 0.33Ω
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 2
auf Bestellung 1591 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
38+1.9 EUR
43+ 1.69 EUR
50+ 1.46 EUR
53+ 1.37 EUR
Mindestbestellmenge: 38
BTS6133D  BTS6133D.pdf
BTS6133D 
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Output current: 33A
Case: TO252-5
Mounting: SMD
Number of channels: 1
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
auf Bestellung 1163 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
20+3.6 EUR
31+ 2.37 EUR
32+ 2.25 EUR
1000+ 2.23 EUR
Mindestbestellmenge: 20
BTS6143D description BTS6143D.pdf
BTS6143D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
auf Bestellung 3329 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
20+3.73 EUR
21+ 3.42 EUR
32+ 2.26 EUR
34+ 2.13 EUR
1000+ 2.1 EUR
2500+ 2.06 EUR
Mindestbestellmenge: 20
IPN80R2K4P7ATMA1 IPN80R2K4P7.pdf
IPN80R2K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Power dissipation: 6.3W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 8nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Drain current: 1.7A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IPN80R3K3P7ATMA1 IPN80R3K3P7.pdf
IPN80R3K3P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Power dissipation: 6.1W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 6nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Drain current: 1.3A
On-state resistance: 3.3Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IPN80R4K5P7ATMA1 IPN80R4K5P7.pdf
IPN80R4K5P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 6W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel
Kind of channel: enhanced
Version: ESD
auf Bestellung 2247 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
44+1.66 EUR
95+ 0.76 EUR
106+ 0.68 EUR
123+ 0.58 EUR
130+ 0.55 EUR
Mindestbestellmenge: 44
IPN80R600P7ATMA1 IPN80R600P7.pdf
IPN80R600P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Power dissipation: 7.4W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 20nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
Drain current: 5.5A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IPN80R750P7ATMA1 IPN80R750P7.pdf
IPN80R750P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Mounting: SMD
Version: ESD
Drain-source voltage: 800V
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 7.2W
Polarisation: unipolar
Kind of package: reel
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-SOT223
Produkt ist nicht verfügbar
IRGP4263DPBF IRGP4263DPBF.pdf
IRGP4263DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Collector current: 90A
Type of transistor: IGBT
Power dissipation: 325W
Produkt ist nicht verfügbar
TT400N26KOF  TT400N26KOF.pdf
TT400N26KOF 
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
IPP60R190E6XKSA1 IPP60R190E6-DTE.pdf
IPP60R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ E6
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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