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S70KS1282GABHV023 INFINEON TECHNOLOGIES Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 128Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Produkt ist nicht verfügbar
S80KS5122GABHV023 INFINEON TECHNOLOGIES Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 256Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Produkt ist nicht verfügbar
IDH08G65C6XKSA1 IDH08G65C6XKSA1 INFINEON TECHNOLOGIES IDH08G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; Ir: 62uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 37A
Leakage current: 62µA
Power dissipation: 63W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.08 EUR
21+ 3.42 EUR
28+ 2.56 EUR
Mindestbestellmenge: 18
S25HS02GTDPBHB053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S25HS02GTDPBHV053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S28HS02GTFPBHV050 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S28HS02GTFPBHV053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
IRLHS2242TRPBF IRLHS2242TRPBF INFINEON TECHNOLOGIES irlhs2242pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: -20V
Drain current: -7.2A
Type of transistor: P-MOSFET
Power dissipation: 2.1W
auf Bestellung 3894 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
218+ 0.33 EUR
332+ 0.22 EUR
350+ 0.2 EUR
Mindestbestellmenge: 162
AUIRFR8405 AUIRFR8405 INFINEON TECHNOLOGIES AUIRFR8405.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 804A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
PVI5013RSPBF PVI5013RSPBF INFINEON TECHNOLOGIES pvi5013r.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Manufacturer series: PVI5013RPbF
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
HFA15TB60PBF HFA15TB60PBF INFINEON TECHNOLOGIES HFA15TB60PBF.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 29W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Power dissipation: 29W
Reverse recovery time: 74ns
Produkt ist nicht verfügbar
IPB180P04P403ATMA1 IPB180P04P403ATMA1 INFINEON TECHNOLOGIES IPB180P04P403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -180A; 150W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -40V
Drain current: -180A
On-state resistance: 2.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 0.19µC
Produkt ist nicht verfügbar
CY62168EV30LL-45BVXIT INFINEON TECHNOLOGIES ?docID=50111 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
CY62168EV30LL-45BVXI INFINEON TECHNOLOGIES Infineon-CY62168EV30_MOBL_16_MBIT_(2M_x_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebedce432c8 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
CY14B104M-ZSP25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104M-ZSP25XIT INFINEON TECHNOLOGIES ?docID=44757 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104M-ZSP45XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104M-ZSP45XIT INFINEON TECHNOLOGIES ?docID=44757 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP45XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP25XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP45XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108M-ZSP25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108M-ZSP25XIT INFINEON TECHNOLOGIES ?docID=50894 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108N-ZSP25XI INFINEON TECHNOLOGIES Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108N-ZSP45XI INFINEON TECHNOLOGIES Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108N-ZSP45XIT INFINEON TECHNOLOGIES ?docID=50893 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B116N-ZSP25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B116N-ZSP25XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY7C10612G30-10ZSXI INFINEON TECHNOLOGIES Infineon-CY7C10612G_CY7C10612GE_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3fea63963&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
PVI5013RS-TPBF PVI5013RS-TPBF INFINEON TECHNOLOGIES PVI5013RS-TPBF.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 0.25ms
Manufacturer series: PVI5013RPbF
Produkt ist nicht verfügbar
CY14MB064Q2A-SXQ INFINEON TECHNOLOGIES download Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz
Memory: 64kb SRAM
Operating temperature: -40...105°C
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Frequency: 40MHz
Case: SOIC8
Kind of interface: serial
Produkt ist nicht verfügbar
CY14MB064Q2A-SXQT INFINEON TECHNOLOGIES ?docID=46910 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz
Memory: 64kb SRAM
Operating temperature: -40...105°C
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Frequency: 40MHz
Case: SOIC8
Kind of interface: serial
Produkt ist nicht verfügbar
CY7C1360C-166AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Frequency: 166MHz
Produkt ist nicht verfügbar
CY7C1360C-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
CY7C1360C-200AXCT INFINEON TECHNOLOGIES ?docID=39999 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
CY7C1361C-100AXE INFINEON TECHNOLOGIES Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Frequency: 100MHz
Produkt ist nicht verfügbar
CY7C1361C-100AXET INFINEON TECHNOLOGIES ?docID=50329 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Frequency: 100MHz
Produkt ist nicht verfügbar
CY7C1361C-100BZXE INFINEON TECHNOLOGIES Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; FBGA165; parallel; -40÷125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Frequency: 100MHz
Produkt ist nicht verfügbar
CY7C1361C-133AXI INFINEON TECHNOLOGIES Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
IPI65R190C6XKSA1 IPI65R190C6XKSA1 INFINEON TECHNOLOGIES IPI65R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPI65R190CFDXKSA1 IPI65R190CFDXKSA1 INFINEON TECHNOLOGIES IPI65R190CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPL65R190E6AUMA1 IPL65R190E6AUMA1 INFINEON TECHNOLOGIES IPL65R190E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFHS9301TRPBF IRFHS9301TRPBF INFINEON TECHNOLOGIES irfhs9301pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Power dissipation: 2.1W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFHS9351TRPBF IRFHS9351TRPBF INFINEON TECHNOLOGIES irfhs9351pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.4W; PQFN2X2
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.4W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
S29PL127J60BFI040 INFINEON TECHNOLOGIES Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 60ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
S29PL127J65BFW040 INFINEON TECHNOLOGIES Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 65ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -25...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 65ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
S29PL127J70BFI040 INFINEON TECHNOLOGIES Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
S29PL127J70BFI043 INFINEON TECHNOLOGIES Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
CY7C199D-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
CY14B256PA-SFXI INFINEON TECHNOLOGIES Infineon-CY14C256PA_CY14B256PA_CY14E256PA_256-Kbit_(32_K_8)_SPI_nvSRAM_with_Real_Time_Clock-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec00bf63493 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial
Memory: 256kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Frequency: 40MHz
Case: SOIC16
Kind of interface: serial
Produkt ist nicht verfügbar
CY7C1325G-133AXC INFINEON TECHNOLOGIES Infineon-CY7C1325G_4-Mbit_(256_K_18)_Flow-Through_Sync_SRAM-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec43033399b Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 4Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
CY7C1325G-133AXCT INFINEON TECHNOLOGIES Infineon-CY7C1325G_4-Mbit_(256_K_18)_Flow-Through_Sync_SRAM-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec43033399b Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 4Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
CY7C1327G-133AXI INFINEON TECHNOLOGIES Infineon-CY7C1327G_4-Mbit_(256_K_18)_Pipelined_Sync_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec41d4b3988 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 4Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
IDW40G65C5XKSA1 IDW40G65C5XKSA1 INFINEON TECHNOLOGIES IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 153A
Leakage current: 8.2µA
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Case: PG-TO247-3
Produkt ist nicht verfügbar
CY7C4121KV13-633FCXI INFINEON TECHNOLOGIES Infineon-CY7C4121KV13_CY7C4141KV13_144-Mbit_QDR-IV_HP_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec49bd53a19&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.3V DC
Frequency: 633MHz
Produkt ist nicht verfügbar
CY7C4141KV13-633FCXI INFINEON TECHNOLOGIES Infineon-CY7C4121KV13_CY7C4141KV13_144-Mbit_QDR-IV_HP_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec49bd53a19&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.3V DC
Frequency: 633MHz
Produkt ist nicht verfügbar
S25FS512SAGBHI210 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
S25FS512SAGBHI213 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
S25FS512SAGBHV210 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
S70KS1282GABHV023
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 128Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Produkt ist nicht verfügbar
S80KS5122GABHV023 Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 256Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Produkt ist nicht verfügbar
IDH08G65C6XKSA1 IDH08G65C6.pdf
IDH08G65C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; Ir: 62uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 37A
Leakage current: 62µA
Power dissipation: 63W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+4.08 EUR
21+ 3.42 EUR
28+ 2.56 EUR
Mindestbestellmenge: 18
S25HS02GTDPBHB053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S25HS02GTDPBHV053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S28HS02GTFPBHV050
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S28HS02GTFPBHV053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
IRLHS2242TRPBF irlhs2242pbf.pdf
IRLHS2242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: -20V
Drain current: -7.2A
Type of transistor: P-MOSFET
Power dissipation: 2.1W
auf Bestellung 3894 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
162+0.44 EUR
218+ 0.33 EUR
332+ 0.22 EUR
350+ 0.2 EUR
Mindestbestellmenge: 162
AUIRFR8405 AUIRFR8405.pdf
AUIRFR8405
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 804A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
PVI5013RSPBF pvi5013r.pdf
PVI5013RSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Manufacturer series: PVI5013RPbF
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+14.3 EUR
Mindestbestellmenge: 5
HFA15TB60PBF HFA15TB60PBF.pdf
HFA15TB60PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 29W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Power dissipation: 29W
Reverse recovery time: 74ns
Produkt ist nicht verfügbar
IPB180P04P403ATMA1 IPB180P04P403.pdf
IPB180P04P403ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -180A; 150W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -40V
Drain current: -180A
On-state resistance: 2.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 0.19µC
Produkt ist nicht verfügbar
CY62168EV30LL-45BVXIT ?docID=50111
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
CY62168EV30LL-45BVXI Infineon-CY62168EV30_MOBL_16_MBIT_(2M_x_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebedce432c8
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
CY14B104M-ZSP25XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104M-ZSP25XIT ?docID=44757
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104M-ZSP45XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104M-ZSP45XIT ?docID=44757
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP25XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP45XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP25XIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP45XIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108M-ZSP25XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108M-ZSP25XIT ?docID=50894
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108N-ZSP25XI Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108N-ZSP45XI Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108N-ZSP45XIT ?docID=50893
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B116N-ZSP25XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B116N-ZSP25XIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY7C10612G30-10ZSXI Infineon-CY7C10612G_CY7C10612GE_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3fea63963&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
PVI5013RS-TPBF PVI5013RS-TPBF.pdf
PVI5013RS-TPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 0.25ms
Manufacturer series: PVI5013RPbF
Produkt ist nicht verfügbar
CY14MB064Q2A-SXQ download
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz
Memory: 64kb SRAM
Operating temperature: -40...105°C
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Frequency: 40MHz
Case: SOIC8
Kind of interface: serial
Produkt ist nicht verfügbar
CY14MB064Q2A-SXQT ?docID=46910
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz
Memory: 64kb SRAM
Operating temperature: -40...105°C
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Frequency: 40MHz
Case: SOIC8
Kind of interface: serial
Produkt ist nicht verfügbar
CY7C1360C-166AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Frequency: 166MHz
Produkt ist nicht verfügbar
CY7C1360C-200AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
CY7C1360C-200AXCT ?docID=39999
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
CY7C1361C-100AXE Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Frequency: 100MHz
Produkt ist nicht verfügbar
CY7C1361C-100AXET ?docID=50329
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Frequency: 100MHz
Produkt ist nicht verfügbar
CY7C1361C-100BZXE Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; FBGA165; parallel; -40÷125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.135...3.6V DC
Frequency: 100MHz
Produkt ist nicht verfügbar
CY7C1361C-133AXI Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
IPI65R190C6XKSA1 IPI65R190C6-DTE.pdf
IPI65R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPI65R190CFDXKSA1 IPI65R190CFD-DTE.pdf
IPI65R190CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPL65R190E6AUMA1 IPL65R190E6-DTE.pdf
IPL65R190E6AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFHS9301TRPBF irfhs9301pbf.pdf
IRFHS9301TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 2.1W; PQFN2X2
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Power dissipation: 2.1W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFHS9351TRPBF irfhs9351pbf.pdf
IRFHS9351TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.4W; PQFN2X2
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.4W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
S29PL127J60BFI040 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 60ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
S29PL127J65BFW040 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 65ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -25...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 65ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
S29PL127J70BFI040 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
S29PL127J70BFI043 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 70ns; FBGA80; parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 70ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: FBGA80
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
CY7C199D-10VXIT Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
CY14B256PA-SFXI Infineon-CY14C256PA_CY14B256PA_CY14E256PA_256-Kbit_(32_K_8)_SPI_nvSRAM_with_Real_Time_Clock-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec00bf63493
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC16; -40÷85°C; serial
Memory: 256kb SRAM
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 32kx8bit
Frequency: 40MHz
Case: SOIC16
Kind of interface: serial
Produkt ist nicht verfügbar
CY7C1325G-133AXC Infineon-CY7C1325G_4-Mbit_(256_K_18)_Flow-Through_Sync_SRAM-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec43033399b
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 4Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
CY7C1325G-133AXCT Infineon-CY7C1325G_4-Mbit_(256_K_18)_Flow-Through_Sync_SRAM-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec43033399b
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 4Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
CY7C1327G-133AXI Infineon-CY7C1327G_4-Mbit_(256_K_18)_Pipelined_Sync_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec41d4b3988
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; -40÷85°C
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Kind of interface: parallel
Part status: Not recommended for new designs
Memory: 4Mb SRAM
Mounting: SMD
Case: TQFP100
Supply voltage: 3.135...3.6V DC
Frequency: 133MHz
Produkt ist nicht verfügbar
IDW40G65C5XKSA1 IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237
IDW40G65C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Max. off-state voltage: 650V
Max. forward voltage: 1.8V
Load current: 40A
Semiconductor structure: single diode
Max. forward impulse current: 153A
Leakage current: 8.2µA
Power dissipation: 112W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Case: PG-TO247-3
Produkt ist nicht verfügbar
CY7C4121KV13-633FCXI Infineon-CY7C4121KV13_CY7C4141KV13_144-Mbit_QDR-IV_HP_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec49bd53a19&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.3V DC
Frequency: 633MHz
Produkt ist nicht verfügbar
CY7C4141KV13-633FCXI Infineon-CY7C4121KV13_CY7C4141KV13_144-Mbit_QDR-IV_HP_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec49bd53a19&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FCBGA361; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.3V DC
Frequency: 633MHz
Produkt ist nicht verfügbar
S25FS512SAGBHI210 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
S25FS512SAGBHI213 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
S25FS512SAGBHV210 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
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