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IPD65R400CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252
On-state resistance: 0.4Ω
Power dissipation: 118W
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 700V
Pulsed drain current: 30A
Produkt ist nicht verfügbar
IPD65R420CFDATMA1 IPD65R420CFDATMA1 INFINEON TECHNOLOGIES IPD65R420CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 8.7A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Produkt ist nicht verfügbar
IPD65R420CFDBTMA1 IPD65R420CFDBTMA1 INFINEON TECHNOLOGIES IPD65R420CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 8.7A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Produkt ist nicht verfügbar
IPD65R600C6BTMA1 IPD65R600C6BTMA1 INFINEON TECHNOLOGIES IPD65R600C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPD65R600E6ATMA1 IPD65R600E6ATMA1 INFINEON TECHNOLOGIES IPD65R600E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPD65R600E6BTMA1 IPD65R600E6BTMA1 INFINEON TECHNOLOGIES IPD65R600E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPD65R660CFDATMA1 IPD65R660CFDATMA1 INFINEON TECHNOLOGIES IPD65R660CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.66Ω
Power dissipation: 62.5W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Produkt ist nicht verfügbar
IPD65R660CFDBTMA1 IPD65R660CFDBTMA1 INFINEON TECHNOLOGIES IPD65R660CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.66Ω
Power dissipation: 62.5W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Produkt ist nicht verfügbar
IRFSL4310ZPBF IRFSL4310ZPBF INFINEON TECHNOLOGIES irfb4310zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
XMC4200F64F256ABXQMA1 XMC4200F64F256ABXQMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4200
Memory: 40kB SRAM; 256kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Produkt ist nicht verfügbar
XMC4200F64K256ABXQSA1 XMC4200F64K256ABXQSA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4200
Memory: 40kB SRAM; 256kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Produkt ist nicht verfügbar
TT500N14KOFHPSA2 TT500N14KOFHPSA2 INFINEON TECHNOLOGIES TT500N14KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
FF200R12KE3HOSA1 FF200R12KE3HOSA1 INFINEON TECHNOLOGIES FF200R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Produkt ist nicht verfügbar
FF200R12KE4PHOSA1 FF200R12KE4PHOSA1 INFINEON TECHNOLOGIES FF200R12KE4P.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Produkt ist nicht verfügbar
FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 INFINEON TECHNOLOGIES FF200R12KT3E.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Produkt ist nicht verfügbar
FF200R12KT4HOSA1 FF200R12KT4HOSA1 INFINEON TECHNOLOGIES FF200R12KT4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.1kW
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
1+190.32 EUR
FZ400R12KS4HOSA1 INFINEON TECHNOLOGIES FZ400R12KS4.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
Produkt ist nicht verfügbar
FZ600R12KE3HOSA1 FZ600R12KE3HOSA1 INFINEON TECHNOLOGIES FZ600R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
Produkt ist nicht verfügbar
FZ900R12KE4HOSA1 INFINEON TECHNOLOGIES FZ900R12KE4.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Produkt ist nicht verfügbar
BCR321UE6327HTSA1 INFINEON TECHNOLOGIES dgdl?fileId=5546d4624b0b249c014b7d69949b463b Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...4.5V
Produkt ist nicht verfügbar
IPB117N20NFDATMA1 IPB117N20NFDATMA1 INFINEON TECHNOLOGIES IPB117N20NFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 11.7mΩ
Drain current: 84A
Drain-source voltage: 200V
Case: PG-TO263-3
Technology: OptiMOS™ FD
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 300W
Produkt ist nicht verfügbar
IPB65R190CFDATMA1 IPB65R190CFDATMA1 INFINEON TECHNOLOGIES IPB65R190CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPL65R165CFDAUMA1 IPL65R165CFDAUMA1 INFINEON TECHNOLOGIES IPL65R165CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.3A
Power dissipation: 195W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 INFINEON TECHNOLOGIES FF45MR12W1M1B11.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+107.71 EUR
IPA083N10N5XKSA1 IPA083N10N5XKSA1 INFINEON TECHNOLOGIES IPA083N10N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.75 EUR
34+ 2.1 EUR
Mindestbestellmenge: 27
IPA083N10NM5SXKSA1 IPA083N10NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA083N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfe00a06e30 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.14 EUR
38+ 1.93 EUR
43+ 1.7 EUR
48+ 1.52 EUR
50+ 1.43 EUR
Mindestbestellmenge: 34
TLE9250SJXUMA1 TLE9250SJXUMA1 INFINEON TECHNOLOGIES TLE9250.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
TLE9250XSJXUMA1 TLE9250XSJXUMA1 INFINEON TECHNOLOGIES TLE9250X.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
BFR360FH6327XTSA1 BFR360FH6327XTSA1 INFINEON TECHNOLOGIES BFR360F.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Current gain: 90...160
Collector current: 35mA
Type of transistor: NPN
Power dissipation: 0.21W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: TSFP-3
Frequency: 14GHz
Collector-emitter voltage: 6V
auf Bestellung 3005 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
232+ 0.31 EUR
336+ 0.21 EUR
391+ 0.18 EUR
562+ 0.13 EUR
596+ 0.12 EUR
Mindestbestellmenge: 139
IPT029N08N5ATMA1 IPT029N08N5ATMA1 INFINEON TECHNOLOGIES IPT029N08N5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Case: PG-HSOF-8
Mounting: SMD
Kind of package: tape
Pulsed drain current: 676A
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 70nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
IPAN70R750P7SXKSA1 IPAN70R750P7SXKSA1 INFINEON TECHNOLOGIES IPAN70R750P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Mounting: THT
Version: ESD
Drain-source voltage: 700V
Drain current: 4A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 20.8W
Polarisation: unipolar
Kind of package: tube
Gate charge: 8.3nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: TO220FP
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
122+ 0.59 EUR
130+ 0.55 EUR
135+ 0.53 EUR
148+ 0.48 EUR
Mindestbestellmenge: 107
IPP60R022S7XKSA1 IPP60R022S7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: THT
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: TO220
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Produkt ist nicht verfügbar
BAS7006WH6327XTSA1 BAS7006WH6327XTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward impulse current: 0.1A
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
135+0.53 EUR
Mindestbestellmenge: 135
FS150R17PE4BOSA1 INFINEON TECHNOLOGIES FS150R17PE4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Technology: EconoPACK™ 4
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO4-1
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
1EDN7550BXTSA1 1EDN7550BXTSA1 INFINEON TECHNOLOGIES 1EDN7550B.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Case: PG-SOT23-6
Topology: single transistor
Technology: EiceDRIVER™
Kind of package: reel; tape
Voltage class: 80V
Mounting: SMD
Supply voltage: 4.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: gate driver; low-side
auf Bestellung 1542 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
75+ 0.96 EUR
107+ 0.67 EUR
114+ 0.63 EUR
Mindestbestellmenge: 66
BSC082N10LSGATMA1 BSC082N10LSGATMA1 INFINEON TECHNOLOGIES BSC082N10LSG-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP60R180P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
IPB016N06L3GATMA1 IPB016N06L3GATMA1 INFINEON TECHNOLOGIES IPB016N06L3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Produkt ist nicht verfügbar
PVI1050NSPBF PVI1050NSPBF INFINEON TECHNOLOGIES pvin.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Produkt ist nicht verfügbar
BSC030N04NSGATMA1 BSC030N04NSGATMA1 INFINEON TECHNOLOGIES BSC030N04NSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPB011N04LGATMA1 IPB011N04LGATMA1 INFINEON TECHNOLOGIES IPB011N04LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Produkt ist nicht verfügbar
IPB011N04NGATMA1 IPB011N04NGATMA1 INFINEON TECHNOLOGIES IPB011N04NG-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Produkt ist nicht verfügbar
IPD70N10S3L12ATMA1 INFINEON TECHNOLOGIES Infineon-IPD70N10S3L-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043183a955501188996d3f9675c&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 280A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSC070N10NS3GATMA1 BSC070N10NS3GATMA1 INFINEON TECHNOLOGIES BSC070N10NS3G-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSC070N10NS5ATMA1 BSC070N10NS5ATMA1 INFINEON TECHNOLOGIES BSC070N10NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
ITS4130QEPDXUMA1 INFINEON TECHNOLOGIES ITS4130QEPD.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Supply voltage: 5...45V DC
Number of channels: 4
Case: PG-TSDSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Output current: 1.25A
Kind of output: N-Channel
Turn-off time: 75µs
Power dissipation: 1.8W
Technology: Industrial PROFET
On-state resistance: 0.13Ω
Turn-on time: 75µs
Produkt ist nicht verfügbar
ITS4140N ITS4140N INFINEON TECHNOLOGIES ITS4140N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
auf Bestellung 1827 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.6 EUR
50+ 1.43 EUR
58+ 1.24 EUR
61+ 1.17 EUR
500+ 1.13 EUR
Mindestbestellmenge: 45
XC878M16FFI5VACFXUMA1 XC878M16FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC878-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 3kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Produkt ist nicht verfügbar
IPP65R190E6XKSA1 IPP65R190E6XKSA1 INFINEON TECHNOLOGIES IPP65R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFH7110TRPBF IRFH7110TRPBF INFINEON TECHNOLOGIES IRFH7110TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPT60R022S7XTMA1 INFINEON TECHNOLOGIES IPT60R022S7XTMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 31nC
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: PG-HSOF-8
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Produkt ist nicht verfügbar
XC822MT1FRIAAFXUMA1 XC822MT1FRIAAFXUMA1 INFINEON TECHNOLOGIES XC82X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
auf Bestellung 382 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.47 EUR
Mindestbestellmenge: 49
IRLMS1902TRPBF IRLMS1902TRPBF INFINEON TECHNOLOGIES irlms1902pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRLMS1503TRPBF IRLMS1503TRPBF INFINEON TECHNOLOGIES irlms1503pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRLMS6702TRPBF IRLMS6702TRPBF INFINEON TECHNOLOGIES irlms6702pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRFSL4010PBF IRFSL4010PBF INFINEON TECHNOLOGIES irfs4010pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRGSL4062DPBF IRGSL4062DPBF INFINEON TECHNOLOGIES irgs4062dpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
AUIRGSL4062D1 AUIRGSL4062D1 INFINEON TECHNOLOGIES AUIRGx4062D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 39A
Power dissipation: 123W
Case: TO262
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 176ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
Mindestbestellmenge: 9
IRS2104SPBF IRS2104SPBF INFINEON TECHNOLOGIES irs2104.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.82 EUR
42+ 1.73 EUR
53+ 1.37 EUR
56+ 1.29 EUR
Mindestbestellmenge: 40
STT2200N18P55XPSA1 INFINEON TECHNOLOGIES STT2200N18P55.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 2.18kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.8kV
Load current: 2.18kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
IPD65R400CEAUMA1 Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252
On-state resistance: 0.4Ω
Power dissipation: 118W
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 700V
Pulsed drain current: 30A
Produkt ist nicht verfügbar
IPD65R420CFDATMA1 IPD65R420CFD-DTE.pdf
IPD65R420CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 8.7A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Produkt ist nicht verfügbar
IPD65R420CFDBTMA1 IPD65R420CFD-DTE.pdf
IPD65R420CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 8.7A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Produkt ist nicht verfügbar
IPD65R600C6BTMA1 IPD65R600C6-DTE.pdf
IPD65R600C6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPD65R600E6ATMA1 IPD65R600E6-DTE.pdf
IPD65R600E6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPD65R600E6BTMA1 IPD65R600E6-DTE.pdf
IPD65R600E6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPD65R660CFDATMA1 IPD65R660CFD-DTE.pdf
IPD65R660CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.66Ω
Power dissipation: 62.5W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Produkt ist nicht verfügbar
IPD65R660CFDBTMA1 IPD65R660CFD-DTE.pdf
IPD65R660CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.66Ω
Power dissipation: 62.5W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Produkt ist nicht verfügbar
IRFSL4310ZPBF irfb4310zpbf.pdf
IRFSL4310ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
XMC4200F64F256ABXQMA1 XMC4100-4200-DTE.pdf
XMC4200F64F256ABXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4200
Memory: 40kB SRAM; 256kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Produkt ist nicht verfügbar
XMC4200F64K256ABXQSA1 XMC4100-4200-DTE.pdf
XMC4200F64K256ABXQSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4200
Memory: 40kB SRAM; 256kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Produkt ist nicht verfügbar
TT500N14KOFHPSA2 TT500N14KOF.pdf
TT500N14KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
FF200R12KE3HOSA1 FF200R12KE3.pdf
FF200R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Produkt ist nicht verfügbar
FF200R12KE4PHOSA1 FF200R12KE4P.pdf
FF200R12KE4PHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Produkt ist nicht verfügbar
FF200R12KT3EHOSA1 FF200R12KT3E.pdf
FF200R12KT3EHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Produkt ist nicht verfügbar
FF200R12KT4HOSA1 FF200R12KT4.pdf
FF200R12KT4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.1kW
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+190.32 EUR
FZ400R12KS4HOSA1 FZ400R12KS4.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
Produkt ist nicht verfügbar
FZ600R12KE3HOSA1 FZ600R12KE3.pdf
FZ600R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
Produkt ist nicht verfügbar
FZ900R12KE4HOSA1 FZ900R12KE4.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Produkt ist nicht verfügbar
BCR321UE6327HTSA1 dgdl?fileId=5546d4624b0b249c014b7d69949b463b
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...4.5V
Produkt ist nicht verfügbar
IPB117N20NFDATMA1 IPB117N20NFD-DTE.pdf
IPB117N20NFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
On-state resistance: 11.7mΩ
Drain current: 84A
Drain-source voltage: 200V
Case: PG-TO263-3
Technology: OptiMOS™ FD
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 300W
Produkt ist nicht verfügbar
IPB65R190CFDATMA1 IPB65R190CFD-DTE.pdf
IPB65R190CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPL65R165CFDAUMA1 IPL65R165CFD-DTE.pdf
IPL65R165CFDAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.3A
Power dissipation: 195W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11.pdf
FF45MR12W1M1B11BOMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+107.71 EUR
IPA083N10N5XKSA1 IPA083N10N5-DTE.pdf
IPA083N10N5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
27+2.75 EUR
34+ 2.1 EUR
Mindestbestellmenge: 27
IPA083N10NM5SXKSA1 Infineon-IPA083N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfe00a06e30
IPA083N10NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
34+2.14 EUR
38+ 1.93 EUR
43+ 1.7 EUR
48+ 1.52 EUR
50+ 1.43 EUR
Mindestbestellmenge: 34
TLE9250SJXUMA1 TLE9250.pdf
TLE9250SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
TLE9250XSJXUMA1 TLE9250X.pdf
TLE9250XSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
BFR360FH6327XTSA1 BFR360F.pdf
BFR360FH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Current gain: 90...160
Collector current: 35mA
Type of transistor: NPN
Power dissipation: 0.21W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: TSFP-3
Frequency: 14GHz
Collector-emitter voltage: 6V
auf Bestellung 3005 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
139+0.51 EUR
232+ 0.31 EUR
336+ 0.21 EUR
391+ 0.18 EUR
562+ 0.13 EUR
596+ 0.12 EUR
Mindestbestellmenge: 139
IPT029N08N5ATMA1 IPT029N08N5.pdf
IPT029N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Case: PG-HSOF-8
Mounting: SMD
Kind of package: tape
Pulsed drain current: 676A
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 70nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
IPAN70R750P7SXKSA1 IPAN70R750P7S.pdf
IPAN70R750P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Mounting: THT
Version: ESD
Drain-source voltage: 700V
Drain current: 4A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 20.8W
Polarisation: unipolar
Kind of package: tube
Gate charge: 8.3nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: TO220FP
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
107+0.67 EUR
122+ 0.59 EUR
130+ 0.55 EUR
135+ 0.53 EUR
148+ 0.48 EUR
Mindestbestellmenge: 107
IPP60R022S7XKSA1 Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d
IPP60R022S7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: THT
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: TO220
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Produkt ist nicht verfügbar
BAS7006WH6327XTSA1 BAS7004E6327HTSA1.pdf
BAS7006WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW
Power dissipation: 0.25W
Type of diode: Schottky switching
Mounting: SMD
Case: SOT323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward impulse current: 0.1A
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
135+0.53 EUR
Mindestbestellmenge: 135
FS150R17PE4BOSA1 FS150R17PE4.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Technology: EconoPACK™ 4
Topology: IGBT three-phase bridge; NTC thermistor
Case: AG-ECONO4-1
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
1EDN7550BXTSA1 1EDN7550B.pdf
1EDN7550BXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Case: PG-SOT23-6
Topology: single transistor
Technology: EiceDRIVER™
Kind of package: reel; tape
Voltage class: 80V
Mounting: SMD
Supply voltage: 4.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Kind of integrated circuit: gate driver; low-side
auf Bestellung 1542 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
66+1.09 EUR
75+ 0.96 EUR
107+ 0.67 EUR
114+ 0.63 EUR
Mindestbestellmenge: 66
BSC082N10LSGATMA1 BSC082N10LSG-dte.pdf
BSC082N10LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP60R180P7XKSA1 Infineon-IPP60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bdc7fff3cbb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
IPB016N06L3GATMA1 IPB016N06L3G-DTE.pdf
IPB016N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Produkt ist nicht verfügbar
PVI1050NSPBF pvin.pdf
PVI1050NSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Produkt ist nicht verfügbar
BSC030N04NSGATMA1 BSC030N04NSG-DTE.pdf
BSC030N04NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPB011N04LGATMA1 IPB011N04LG-DTE.pdf
IPB011N04LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Produkt ist nicht verfügbar
IPB011N04NGATMA1 IPB011N04NG-dte.pdf
IPB011N04NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO263-7
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Produkt ist nicht verfügbar
IPD70N10S3L12ATMA1 Infineon-IPD70N10S3L-DS-v01_01-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043183a955501188996d3f9675c&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 48A; Idm: 280A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 48A
Pulsed drain current: 280A
Power dissipation: 125W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSC070N10NS3GATMA1 BSC070N10NS3G-dte.pdf
BSC070N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSC070N10NS5ATMA1 BSC070N10NS5-DTE.pdf
BSC070N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
ITS4130QEPDXUMA1 ITS4130QEPD.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Mounting: SMD
Supply voltage: 5...45V DC
Number of channels: 4
Case: PG-TSDSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Output current: 1.25A
Kind of output: N-Channel
Turn-off time: 75µs
Power dissipation: 1.8W
Technology: Industrial PROFET
On-state resistance: 0.13Ω
Turn-on time: 75µs
Produkt ist nicht verfügbar
ITS4140N ITS4140N.pdf
ITS4140N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
auf Bestellung 1827 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
45+1.6 EUR
50+ 1.43 EUR
58+ 1.24 EUR
61+ 1.17 EUR
500+ 1.13 EUR
Mindestbestellmenge: 45
XC878M16FFI5VACFXUMA1 XC878-DTE.pdf
XC878M16FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 3kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Produkt ist nicht verfügbar
IPP65R190E6XKSA1 IPP65R190E6-DTE.pdf
IPP65R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFH7110TRPBF IRFH7110TRPBF.pdf
IRFH7110TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPT60R022S7XTMA1 IPT60R022S7XTMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 31nC
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: PG-HSOF-8
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Produkt ist nicht verfügbar
XC822MT1FRIAAFXUMA1 XC82X-DTE.pdf
XC822MT1FRIAAFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
auf Bestellung 382 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
49+1.47 EUR
Mindestbestellmenge: 49
IRLMS1902TRPBF irlms1902pbf.pdf
IRLMS1902TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRLMS1503TRPBF description irlms1503pbf.pdf
IRLMS1503TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRLMS6702TRPBF irlms6702pbf.pdf
IRLMS6702TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRFSL4010PBF description irfs4010pbf.pdf
IRFSL4010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRGSL4062DPBF irgs4062dpbf.pdf
IRGSL4062DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
AUIRGSL4062D1 AUIRGx4062D1.pdf
AUIRGSL4062D1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 39A
Power dissipation: 123W
Case: TO262
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 176ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
9+7.95 EUR
Mindestbestellmenge: 9
IRS2104SPBF irs2104.pdf
IRS2104SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
40+1.82 EUR
42+ 1.73 EUR
53+ 1.37 EUR
56+ 1.29 EUR
Mindestbestellmenge: 40
STT2200N18P55XPSA1 STT2200N18P55.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 2.18kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.8kV
Load current: 2.18kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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