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BSC070N10NS3GATMA1

BSC070N10NS3GATMA1 Infineon Technologies

BSC070N10NS3+Rev2+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304327b89750012824712c6c6f2f Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 90A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.39 EUR
10000+ 1.34 EUR
Mindestbestellmenge: 5000
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Technische Details BSC070N10NS3GATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 90A TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 75µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V.

Weitere Produktangebote BSC070N10NS3GATMA1 nach Preis ab 1.23 EUR bis 3.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BSC070N10NS3GATMA1 BSC070N10NS3GATMA1 Hersteller : Infineon Technologies Infineon_BSC070N10NS3_G_DataSheet_v02_02_EN-3360898.pdf MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
auf Bestellung 20670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.85 EUR
10+ 2.13 EUR
100+ 1.88 EUR
250+ 1.8 EUR
500+ 1.59 EUR
1000+ 1.28 EUR
5000+ 1.23 EUR
BSC070N10NS3GATMA1 BSC070N10NS3GATMA1 Hersteller : Infineon Technologies BSC070N10NS3+Rev2+1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304327b89750012824712c6c6f2f Description: MOSFET N-CH 100V 90A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
auf Bestellung 15578 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.2 EUR
10+ 2.66 EUR
100+ 2.12 EUR
500+ 1.79 EUR
1000+ 1.52 EUR
2000+ 1.45 EUR
Mindestbestellmenge: 6
BSC070N10NS3GATMA1 BSC070N10NS3GATMA1 Hersteller : Infineon Technologies infineon-bsc070n10ns3g-datasheet-v02_02-en.pdf Trans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R
auf Bestellung 4340 Stücke:
Lieferzeit 14-21 Tag (e)
BSC070N10NS3GATMA1 BSC070N10NS3GATMA1 Hersteller : Infineon Technologies infineon-bsc070n10ns3g-datasheet-v02_02-en.pdf Trans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSC070N10NS3GATMA1 BSC070N10NS3GATMA1 Hersteller : INFINEON TECHNOLOGIES BSC070N10NS3G-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSC070N10NS3GATMA1 BSC070N10NS3GATMA1 Hersteller : INFINEON TECHNOLOGIES BSC070N10NS3G-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar