Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (140092) > Seite 2318 nach 2335
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IRFHM830TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3 Mounting: SMD Case: PQFN3.3X3.3 Kind of package: reel Power dissipation: 2.7W Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 30V Drain current: 21A Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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IRF7807VTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2.5W; SO8 Case: SO8 Drain-source voltage: 30V Drain current: 8.3A Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD |
Produkt ist nicht verfügbar |
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IRF7807ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8 Case: SO8 Drain-source voltage: 30V Drain current: 11A Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD |
Produkt ist nicht verfügbar |
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BSS223PWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323 Drain-source voltage: -20V Drain current: -390mA On-state resistance: 1.2Ω Type of transistor: P-MOSFET Power dissipation: 0.25W Polarisation: unipolar Technology: OptiMOS™ P Kind of channel: enhanced Gate-source voltage: ±12V Mounting: SMD Case: PG-SOT-323 |
auf Bestellung 1285 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP072N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 150W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB600N25N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 250V Drain current: 25A Power dissipation: 136W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPB60R125C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 219W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPB60R180P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 72W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 25nC Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPB60R199CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 600V Drain current: 16A On-state resistance: 0.199Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Technology: CoolMOS™ CP Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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IRFS4310TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFS4310ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Power dissipation: 250W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFS4510TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK Mounting: SMD Polarisation: unipolar Case: D2PAK Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Drain current: 43A Pulsed drain current: 250A On-state resistance: 13.9mΩ Type of transistor: N-MOSFET Power dissipation: 140W Drain-source voltage: 100V |
Produkt ist nicht verfügbar |
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IRFS4610TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 73A Power dissipation: 190W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFS4615TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 33A Power dissipation: 144W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFS4620TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 100A; 144W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 17A Pulsed drain current: 100A Power dissipation: 144W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 77.5mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFS7434TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 229A Pulsed drain current: 1.3kA Power dissipation: 245W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFS7437TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.4mΩ Type of transistor: N-MOSFET Power dissipation: 230W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: D2PAK |
auf Bestellung 794 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS7534TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; D2PAK; StrongIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Power dissipation: 294W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 186nC Kind of channel: enhanced Trade name: StrongIRFET |
Produkt ist nicht verfügbar |
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BSR316PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59 Mounting: SMD Drain-source voltage: -100V Drain current: -290mA On-state resistance: 2.2Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: SC59 |
auf Bestellung 1880 Stücke: Lieferzeit 14-21 Tag (e) |
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IAUS240N08S5N019ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 173A Pulsed drain current: 960A Power dissipation: 230W Case: PG-HSOG-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFH5110TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPP126N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Kind of package: tube Drain-source voltage: 100V Drain current: 58A On-state resistance: 12.6mΩ Type of transistor: N-MOSFET Power dissipation: 94W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFHM9331TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3 Mounting: SMD Kind of package: reel Case: PQFN3.3X3.3 Power dissipation: 2.8W Polarisation: unipolar Drain-source voltage: -30V Type of transistor: P-MOSFET Technology: HEXFET® Kind of channel: enhanced Drain current: -9A |
auf Bestellung 2286 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC050NE2LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Drain-source voltage: 25V Drain current: 39A On-state resistance: 5mΩ Type of transistor: N-MOSFET Power dissipation: 28W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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IRFR1010ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 91A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFR1010ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 91A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPC70N04S5-4R6 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 70A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 24.2nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPC70N04S5L-4R2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 70A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 30nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPC90N04S5-3R6 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8 Drain-source voltage: 40V Drain current: 90A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 63W Polarisation: unipolar Gate charge: 32.6nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
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IPC90N04S5L-3R3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8 Drain-source voltage: 40V Drain current: 90A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 62W Polarisation: unipolar Gate charge: 40nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±16V Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
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IAUC120N04S6L005ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 1550A Power dissipation: 187W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 0.8mΩ Mounting: SMD Gate charge: 177nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IAUC120N04S6L009ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IAUC120N04S6L012ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 115W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IAUC120N04S6N009ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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XMC4100F64F128ABXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC Supply voltage: 3.3V DC Operating temperature: -40...85°C Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 35 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 9 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 128kB FLASH Case: PG-LQFP-64 Type of integrated circuit: ARM microcontroller |
Produkt ist nicht verfügbar |
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XMC4100F64K128ABXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC Supply voltage: 3.3V DC Operating temperature: -40...125°C Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 35 Integrated circuit features: clock gaiting; DSP; RTC; watchdog Number of A/D channels: 9 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 128kB FLASH Case: PG-LQFP-64 Type of integrated circuit: ARM microcontroller |
Produkt ist nicht verfügbar |
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BSC252N10NSFGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Power dissipation: 78W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 25.2mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRLR3915TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 61A Power dissipation: 120W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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IRLR6225TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 100A Power dissipation: 63W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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BFP650FH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4 Type of transistor: NPN Technology: SiGe:C Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 13V Collector current: 0.15A Power dissipation: 0.5W Case: TSFP-4 Mounting: SMD Kind of package: reel; tape Frequency: 42GHz |
auf Bestellung 1703 Stücke: Lieferzeit 14-21 Tag (e) |
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BFP650H6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343 Type of transistor: NPN Technology: SiGe:C Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 13V Collector current: 0.15A Power dissipation: 0.5W Case: SOT343 Mounting: SMD Kind of package: reel; tape Frequency: 42GHz |
auf Bestellung 2669 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLHM620TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3 Mounting: SMD Kind of package: reel Case: PQFN3.3X3.3 Power dissipation: 2.7W Polarisation: unipolar Drain-source voltage: 20V Features of semiconductor devices: logic level Type of transistor: N-MOSFET Technology: HEXFET® Kind of channel: enhanced Drain current: 40A |
Produkt ist nicht verfügbar |
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IRFH6200TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 45A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BCR562E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ Mounting: SMD Power dissipation: 0.33W Polarisation: bipolar Type of transistor: PNP Collector current: 0.5A Collector-emitter voltage: 50V Frequency: 150MHz Case: SOT23 Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
Produkt ist nicht verfügbar |
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IRFU13N20DPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 14A Power dissipation: 110W Case: IPAK Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IR2233SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Operating temperature: -40...125°C Supply voltage: 10...20V DC Turn-on time: 750ns Turn-off time: 700ns Output current: -420...200mA Type of integrated circuit: driver Number of channels: 6 Kind of package: tube Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Voltage class: 1.2kV Mounting: SMD Case: SO28-W Power: 1.6W |
Produkt ist nicht verfügbar |
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IPP030N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7410TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: -12V Drain current: -16A Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFB7446PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB Case: TO220AB Power dissipation: 99W Polarisation: unipolar Kind of package: tube Gate charge: 62nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Trade name: StrongIRFET Mounting: THT Drain-source voltage: 40V Drain current: 123A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET |
auf Bestellung 642 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH7440TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6 Mounting: SMD Drain-source voltage: 40V Drain current: 85A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 104W Polarisation: unipolar Kind of package: reel Gate charge: 92nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Trade name: StrongIRFET Case: PQFN5X6 |
auf Bestellung 3613 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH7446TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6 Case: PQFN5X6 Power dissipation: 78W Polarisation: unipolar Kind of package: reel Gate charge: 65nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Trade name: StrongIRFET Mounting: SMD Drain-source voltage: 40V Drain current: 117A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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IPP147N12N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Kind of package: tube Drain-source voltage: 120V Drain current: 56A On-state resistance: 14.7mΩ Type of transistor: N-MOSFET Power dissipation: 107W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 467 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R190P6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3 Mounting: THT Case: PG-TO247-3 Drain-source voltage: 600V Drain current: 20.2A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 151W Polarisation: unipolar Kind of package: tube Technology: CoolMOS™ P6 Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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IRF7832TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
auf Bestellung 734 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP88H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.35A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 353 Stücke: Lieferzeit 14-21 Tag (e) |
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BSD223PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.39A Power dissipation: 0.25W Case: PG-SOT-363 Gate-source voltage: ±12V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 1860 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP135H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223 Mounting: SMD Case: SOT223 Drain-source voltage: 600V Drain current: 0.12A On-state resistance: 60Ω Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: depleted Gate-source voltage: ±20V |
auf Bestellung 1676 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP372NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 1040 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP315PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.17A Power dissipation: 1.8W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 2392 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS83PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.33A Power dissipation: 0.36W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel Kind of channel: enhanced |
auf Bestellung 17571 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFHM830TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Case: PQFN3.3X3.3
Kind of package: reel
Power dissipation: 2.7W
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Case: PQFN3.3X3.3
Kind of package: reel
Power dissipation: 2.7W
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
IRF7807VTRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 8.3A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 8.3A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Produkt ist nicht verfügbar
IRF7807ZTRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 11A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; 2.5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 11A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Produkt ist nicht verfügbar
BSS223PWH6327XTSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Drain-source voltage: -20V
Drain current: -390mA
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: PG-SOT-323
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-323
Drain-source voltage: -20V
Drain current: -390mA
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: PG-SOT-323
auf Bestellung 1285 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
186+ | 0.39 EUR |
226+ | 0.32 EUR |
261+ | 0.27 EUR |
406+ | 0.18 EUR |
496+ | 0.14 EUR |
958+ | 0.075 EUR |
1015+ | 0.07 EUR |
IPP072N10N3GXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 2.82 EUR |
34+ | 2.14 EUR |
45+ | 1.59 EUR |
IPB600N25N3GATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPB60R125C6ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPB60R180P7ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPB60R199CPATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
IRFS4310TRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFS4310ZTRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFS4510TRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK
Mounting: SMD
Polarisation: unipolar
Case: D2PAK
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 43A
Pulsed drain current: 250A
On-state resistance: 13.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 140W
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 250A; 140W; D2PAK
Mounting: SMD
Polarisation: unipolar
Case: D2PAK
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 43A
Pulsed drain current: 250A
On-state resistance: 13.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 140W
Drain-source voltage: 100V
Produkt ist nicht verfügbar
IRFS4610TRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFS4615TRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFS4620TRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 100A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Pulsed drain current: 100A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 77.5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 100A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Pulsed drain current: 100A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 77.5mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFS7434TRL7PP |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 229A
Pulsed drain current: 1.3kA
Power dissipation: 245W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 229A
Pulsed drain current: 1.3kA
Power dissipation: 245W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFS7437TRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
auf Bestellung 794 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.55 EUR |
24+ | 3.05 EUR |
34+ | 2.12 EUR |
36+ | 2 EUR |
IRFS7534TRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Trade name: StrongIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 186nC
Kind of channel: enhanced
Trade name: StrongIRFET
Produkt ist nicht verfügbar
BSR316PH6327XTSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Mounting: SMD
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC59
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Mounting: SMD
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SC59
auf Bestellung 1880 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
117+ | 0.61 EUR |
168+ | 0.43 EUR |
260+ | 0.28 EUR |
275+ | 0.26 EUR |
500+ | 0.25 EUR |
IAUS240N08S5N019ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 173A
Pulsed drain current: 960A
Power dissipation: 230W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 173A; Idm: 960A; 230W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 173A
Pulsed drain current: 960A
Power dissipation: 230W
Case: PG-HSOG-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFH5110TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPP126N10N3GXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 100V
Drain current: 58A
On-state resistance: 12.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 100V
Drain current: 58A
On-state resistance: 12.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
43+ | 1.67 EUR |
49+ | 1.49 EUR |
55+ | 1.32 EUR |
63+ | 1.14 EUR |
66+ | 1.09 EUR |
IRFHM9331TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Case: PQFN3.3X3.3
Power dissipation: 2.8W
Polarisation: unipolar
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Technology: HEXFET®
Kind of channel: enhanced
Drain current: -9A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Case: PQFN3.3X3.3
Power dissipation: 2.8W
Polarisation: unipolar
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Technology: HEXFET®
Kind of channel: enhanced
Drain current: -9A
auf Bestellung 2286 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
85+ | 0.84 EUR |
103+ | 0.7 EUR |
202+ | 0.35 EUR |
214+ | 0.33 EUR |
BSC050NE2LSATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 25V
Drain current: 39A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 28W; PG-TDSON-8
Mounting: SMD
Case: PG-TDSON-8
Drain-source voltage: 25V
Drain current: 39A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
IRFR1010ZTRLPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 91A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 91A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFR1010ZTRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 91A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 91A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPC70N04S5-4R6 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPC70N04S5L-4R2 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPC90N04S5-3R6 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 32.6nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 32.6nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TDSON-8
Produkt ist nicht verfügbar
IPC90N04S5L-3R3 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 40nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 40nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TDSON-8
Produkt ist nicht verfügbar
IAUC120N04S6L005ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 1550A
Power dissipation: 187W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 1550A
Power dissipation: 187W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
IAUC120N04S6L009ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
IAUC120N04S6L012ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
IAUC120N04S6N009ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
XMC4100F64F128ABXQMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 128kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 128kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Produkt ist nicht verfügbar
XMC4100F64K128ABXQSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 128kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,128kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 128kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Produkt ist nicht verfügbar
BSC252N10NSFGATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRLR3915TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRLR6225TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
BFP650FH6327 |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 13V
Collector current: 0.15A
Power dissipation: 0.5W
Case: TSFP-4
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 13V
Collector current: 0.15A
Power dissipation: 0.5W
Case: TSFP-4
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
auf Bestellung 1703 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
114+ | 0.63 EUR |
144+ | 0.5 EUR |
154+ | 0.47 EUR |
BFP650H6327 |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 13V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 13V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
auf Bestellung 2669 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
105+ | 0.68 EUR |
119+ | 0.6 EUR |
137+ | 0.52 EUR |
145+ | 0.5 EUR |
IRLHM620TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Case: PQFN3.3X3.3
Power dissipation: 2.7W
Polarisation: unipolar
Drain-source voltage: 20V
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Technology: HEXFET®
Kind of channel: enhanced
Drain current: 40A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Case: PQFN3.3X3.3
Power dissipation: 2.7W
Polarisation: unipolar
Drain-source voltage: 20V
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Technology: HEXFET®
Kind of channel: enhanced
Drain current: 40A
Produkt ist nicht verfügbar
IRFH6200TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
BCR562E6327HTSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Frequency: 150MHz
Case: SOT23
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.5A
Collector-emitter voltage: 50V
Frequency: 150MHz
Case: SOT23
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Produkt ist nicht verfügbar
IRFU13N20DPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
IR2233SPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 1.2kV
Mounting: SMD
Case: SO28-W
Power: 1.6W
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Supply voltage: 10...20V DC
Turn-on time: 750ns
Turn-off time: 700ns
Output current: -420...200mA
Type of integrated circuit: driver
Number of channels: 6
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 1.2kV
Mounting: SMD
Case: SO28-W
Power: 1.6W
Produkt ist nicht verfügbar
IPP030N10N3GXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 6.19 EUR |
18+ | 4.16 EUR |
19+ | 3.93 EUR |
IRF7410TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -12V
Drain current: -16A
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: -12V
Drain current: -16A
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFB7446PBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Case: TO220AB
Power dissipation: 99W
Polarisation: unipolar
Kind of package: tube
Gate charge: 62nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Drain-source voltage: 40V
Drain current: 123A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 123A; 99W; TO220AB
Case: TO220AB
Power dissipation: 99W
Polarisation: unipolar
Kind of package: tube
Gate charge: 62nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: THT
Drain-source voltage: 40V
Drain current: 123A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
auf Bestellung 642 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
43+ | 1.67 EUR |
50+ | 1.43 EUR |
81+ | 0.89 EUR |
87+ | 0.83 EUR |
IRFH7440TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Mounting: SMD
Drain-source voltage: 40V
Drain current: 85A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel
Gate charge: 92nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
Case: PQFN5X6
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 85A; 104W; PQFN5X6
Mounting: SMD
Drain-source voltage: 40V
Drain current: 85A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: reel
Gate charge: 92nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
Case: PQFN5X6
auf Bestellung 3613 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.79 EUR |
46+ | 1.59 EUR |
53+ | 1.37 EUR |
55+ | 1.3 EUR |
IRFH7446TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Case: PQFN5X6
Power dissipation: 78W
Polarisation: unipolar
Kind of package: reel
Gate charge: 65nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: SMD
Drain-source voltage: 40V
Drain current: 117A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Case: PQFN5X6
Power dissipation: 78W
Polarisation: unipolar
Kind of package: reel
Gate charge: 65nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Trade name: StrongIRFET
Mounting: SMD
Drain-source voltage: 40V
Drain current: 117A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
IPP147N12N3GXKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 120V
Drain current: 56A
On-state resistance: 14.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 120V
Drain current: 56A
On-state resistance: 14.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 467 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 1.84 EUR |
45+ | 1.62 EUR |
49+ | 1.47 EUR |
51+ | 1.42 EUR |
54+ | 1.34 EUR |
250+ | 1.29 EUR |
IPW60R190P6FKSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Mounting: THT
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ P6
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Mounting: THT
Case: PG-TO247-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ P6
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
IRF7832TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 734 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 1.52 EUR |
57+ | 1.26 EUR |
87+ | 0.83 EUR |
92+ | 0.78 EUR |
BSP88H6327XTSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 353 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
99+ | 0.73 EUR |
108+ | 0.66 EUR |
203+ | 0.35 EUR |
214+ | 0.33 EUR |
BSD223PH6327XTSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 1860 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
218+ | 0.33 EUR |
304+ | 0.24 EUR |
443+ | 0.16 EUR |
521+ | 0.14 EUR |
673+ | 0.11 EUR |
711+ | 0.1 EUR |
736+ | 0.097 EUR |
BSP135H6327XTSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 60Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depleted
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 600V
Drain current: 0.12A
On-state resistance: 60Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: depleted
Gate-source voltage: ±20V
auf Bestellung 1676 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 1.56 EUR |
71+ | 1.02 EUR |
108+ | 0.66 EUR |
114+ | 0.63 EUR |
BSP372NH6327XTSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 1040 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
70+ | 1.03 EUR |
82+ | 0.87 EUR |
92+ | 0.78 EUR |
140+ | 0.51 EUR |
148+ | 0.48 EUR |
500+ | 0.47 EUR |
1000+ | 0.46 EUR |
BSP315PH6327XTSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.17A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 2392 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
79+ | 0.92 EUR |
94+ | 0.77 EUR |
211+ | 0.34 EUR |
224+ | 0.32 EUR |
BSS83PH6327XTSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.33A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.33A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 17571 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
179+ | 0.4 EUR |
216+ | 0.33 EUR |
300+ | 0.24 EUR |
355+ | 0.2 EUR |
834+ | 0.086 EUR |
878+ | 0.082 EUR |