IPC90N04S5-3R6 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 32.6nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TDSON-8
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 32.6nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TDSON-8
Anzahl je Verpackung: 1 Stücke
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Technische Details IPC90N04S5-3R6 INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8, Drain-source voltage: 40V, Drain current: 90A, On-state resistance: 3.6mΩ, Type of transistor: N-MOSFET, Mounting: SMD, Power dissipation: 63W, Polarisation: unipolar, Gate charge: 32.6nC, Technology: OptiMOS™ 5, Kind of channel: enhanced, Gate-source voltage: ±20V, Case: PG-TDSON-8, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPC90N04S5-3R6
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IPC90N04S5-3R6 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8 Drain-source voltage: 40V Drain current: 90A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 63W Polarisation: unipolar Gate charge: 32.6nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |