IRFHM830TRPBF Infineon Technologies
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.52 EUR |
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Technische Details IRFHM830TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 21A/40A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Power Dissipation (Max): 2.7W (Ta), 37W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 50µA, Supplier Device Package: 8-PQFN-Dual (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 25 V.
Weitere Produktangebote IRFHM830TRPBF nach Preis ab 0.34 EUR bis 2.25 EUR
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IRFHM830TRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFHM830TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 21A/40A PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN-Dual (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 25 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFHM830TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R |
auf Bestellung 7404 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFHM830TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFHM830TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R |
auf Bestellung 7404 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFHM830TRPBF | Hersteller : Infineon Technologies |
MOSFETs 30V 1 N-CH HEXFET PWR MOSFET 3.8mOhms |
auf Bestellung 3894 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFHM830TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 21A/40A PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN-Dual (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 25 V |
auf Bestellung 7533 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFHM830TRPBF | Hersteller : INFINEON |
Description: INFINEON - IRFHM830TRPBF - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 0.003 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: 0 Drain-Source-Spannung Vds: 0 rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: 0 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.8V euEccn: NLR Verlustleistung: 2.7W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: 0 Rds(on)-Prüfspannung: 0 Betriebstemperatur, max.: 0 Drain-Source-Durchgangswiderstand: 0.003ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 3609 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFHM830TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFHM830TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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IRFHM830TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3 Mounting: SMD Case: PQFN3.3X3.3 Kind of package: reel Power dissipation: 2.7W Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 30V Drain current: 21A Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRFHM830TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3 Mounting: SMD Case: PQFN3.3X3.3 Kind of package: reel Power dissipation: 2.7W Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 30V Drain current: 21A Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |