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IPC90N04S5L-3R3

IPC90N04S5L-3R3 INFINEON TECHNOLOGIES


Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 40nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TDSON-8
Anzahl je Verpackung: 1 Stücke
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Technische Details IPC90N04S5L-3R3 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8, Drain-source voltage: 40V, Drain current: 90A, On-state resistance: 3.3mΩ, Type of transistor: N-MOSFET, Mounting: SMD, Power dissipation: 62W, Polarisation: unipolar, Gate charge: 40nC, Technology: OptiMOS™ 5, Kind of channel: enhanced, Gate-source voltage: ±16V, Case: PG-TDSON-8, Anzahl je Verpackung: 1 Stücke.

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IPC90N04S5L-3R3 IPC90N04S5L-3R3 Hersteller : Infineon Technologies Infineon MOSFET_(20V 40V)
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IPC90N04S5L-3R3 IPC90N04S5L-3R3 Hersteller : INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 40nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TDSON-8
Produkt ist nicht verfügbar