IPB60R125C6ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
Description: MOSFET N-CH 600V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
auf Bestellung 845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.57 EUR |
10+ | 5.29 EUR |
100+ | 3.93 EUR |
500+ | 3.55 EUR |
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Technische Details IPB60R125C6ATMA1 Infineon Technologies
Description: INFINEON - IPB60R125C6ATMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 30 A, 0.11 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 30A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 219W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 2Pin(s), Produktpalette: CoolMOS C6, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.11ohm, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote IPB60R125C6ATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IPB60R125C6ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPB60R125C6ATMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 30 A, 0.11 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 219W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 2Pin(s) Produktpalette: CoolMOS C6 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.11ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 189 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB60R125C6ATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 30A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB60R125C6ATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 600V 30A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB60R125C6ATMA1 | Hersteller : Infineon Technologies | IPB60R125C6ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 600V 30A 3-Pin(2+Tab) D2PAK T/R - Arrow.com |
Produkt ist nicht verfügbar |
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IPB60R125C6ATMA1 | Hersteller : Infineon Technologies | IPB60R125C6ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 600V 30A 3-Pin(2+Tab) D2PAK T/R - Arrow.com |
Produkt ist nicht verfügbar |
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IPB60R125C6ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 219W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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IPB60R125C6ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 30A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Power Dissipation (Max): 219W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 960µA Supplier Device Package: PG-TO263-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPB60R125C6ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 219W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |