Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (140108) > Seite 2315 nach 2336
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XMC1201T038F0064ABXUMA1 | INFINEON TECHNOLOGIES |
 Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH Case: PG-TSSOP-38 Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1200 Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...85°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 |
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BSC066N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 64A Power dissipation: 46W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Kind of channel: enhanced |
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IPB026N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 60V Drain current: 100A On-state resistance: 2.6mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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IRFH5406TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFB7540PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 183 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS7540TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 88nC Kind of channel: enhanced Trade name: StrongIRFET |
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XMC4108F64K64ABXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC Supply voltage: 3.3V DC Operating temperature: -40...125°C Number of A/D channels: 8 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 64kB FLASH Case: PG-LQFP-64 Type of integrated circuit: ARM microcontroller Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 21 Integrated circuit features: clock gaiting; DSP; RTC; watchdog |
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XMC4108Q48K64ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC Supply voltage: 3.3V DC Operating temperature: -40...125°C Number of A/D channels: 8 Kind of architecture: Cortex M4 Family: XMC4100 Memory: 20kB SRAM; 64kB FLASH Case: PG-VQFN-48 Type of integrated circuit: ARM microcontroller Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 21 Integrated circuit features: clock gaiting; DSP; RTC; watchdog |
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IPI032N06N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 188W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: THT Kind of channel: enhanced |
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IPP052N06L3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Kind of package: tube Drain current: 80A On-state resistance: 5.2mΩ Type of transistor: N-MOSFET Power dissipation: 115W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7501TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.4A; 1.2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.4A Power dissipation: 1.2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7506TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8 Technology: HEXFET® Mounting: SMD Case: SO8 Kind of package: reel Power dissipation: 1.25W Polarisation: unipolar Kind of channel: enhanced Drain-source voltage: -30V Drain current: -1.7A Type of transistor: P-MOSFET x2 |
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IRF7507TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 2.4/-1A; 1.25W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 2.4/-1A Power dissipation: 1.25W Case: SO8 Gate-source voltage: ±12V On-state resistance: 0.135/0.27Ω Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF7509TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2A; 1.25W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 2.7/-2A Power dissipation: 1.25W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.11/0.2Ω Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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SMBT3904SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363 Mounting: SMD Polarisation: bipolar Case: SOT363 Power dissipation: 0.25W Frequency: 300MHz Collector-emitter voltage: 40V Collector current: 0.2A Type of transistor: NPN |
auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
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DD260N16K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 260A Case: BG-PB50-1 Max. forward voltage: 1.32V Max. forward impulse current: 9.5kA Electrical mounting: screw Mechanical mounting: screw |
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TT260N22KOFHOSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 260A Case: BG-PB50AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 8kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| SAK-TC1797-384F150E | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC Type of integrated circuit: microcontroller Case: BGA416 Memory: 3MB FLASH Mounting: SMD Supply voltage: 3.5...5V DC Interface: I2C; SPI; UART |
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XMC1100T038F0016ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM Case: PG-TSSOP-38 Memory: 16kB FLASH; 16kB SRAM Operating temperature: -40...85°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T038F0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-38 Memory: 16kB SRAM; 32kB FLASH Number of inputs/outputs: 34 Number of 16bit timers: 4 Supply voltage: 1.8...5.5V DC Operating temperature: -40...85°C Interface: GPIO Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1100 |
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XMC1100T038X0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Interface: GPIO Number of inputs/outputs: 34 Number of 16bit timers: 4 Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1100 Memory: 16kB SRAM; 64kB FLASH Case: PG-TSSOP-38 Supply voltage: 1.8...5.5V DC |
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| XMC1202Q024X0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200 Case: PG-VQFN-24 Number of inputs/outputs: 22 Number of 16bit timers: 4 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1200 Memory: 16kB SRAM; 32kB FLASH Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 |
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| XMC1202Q040X0032ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200 Case: PG-VQFN-40 Number of inputs/outputs: 26 Number of 16bit timers: 4 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1200 Memory: 16kB SRAM; 32kB FLASH Operating temperature: -40...105°C Supply voltage: 1.8...5.5V DC Type of integrated circuit: ARM microcontroller Interface: GPIO; USIC x2 |
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BTS723GW | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.9...4.2A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SO14 On-state resistance: 53mΩ Supply voltage: 7...58V DC Technology: Classic PROFET |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD35N10S3L26ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 140A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of channel: enhanced |
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IRFR2307ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK Power dissipation: 110W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DPAK Drain-source voltage: 75V Drain current: 53A Type of transistor: N-MOSFET |
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IDW15G120C5BFKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; PG-TO247-3 Type of diode: Schottky rectifying Mounting: THT Case: PG-TO247-3 Kind of package: tube Technology: CoolSiC™ 5G; SiC Max. off-state voltage: 1.2kV Max. forward voltage: 1.4V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 160A Leakage current: 8µA Power dissipation: 200W |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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IDW20G120C5BFKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; PG-TO247-3 Case: PG-TO247-3 Mounting: THT Technology: CoolSiC™ 5G; SiC Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 180A Leakage current: 12µA Max. off-state voltage: 1.2kV Power dissipation: 250W Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 1.4V |
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IDW20G65C5BXKSA2 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; PG-TO247-3; 130W Case: PG-TO247-3 Mounting: THT Technology: CoolSiC™ 5G; SiC Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 46A Leakage current: 2µA Max. off-state voltage: 650V Power dissipation: 130W Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 1.8V |
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| IPD50P04P413ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W Type of transistor: P-MOSFET Technology: OptiMOS® -P2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -45A Pulsed drain current: -200A Power dissipation: 58W Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Kind of channel: enhanced |
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IPD50P04P4L11ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W Type of transistor: P-MOSFET Technology: OptiMOS® -P2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -40A Pulsed drain current: -200A Power dissipation: 58W Case: PG-TO252-3-313 Gate-source voltage: -16...5V On-state resistance: 10.6mΩ Mounting: SMD Gate charge: 14nC Kind of channel: enhanced |
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IPD50R500CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Pulsed drain current: 24A Power dissipation: 57W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel Kind of channel: enhanced |
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IPU50R1K4CEBKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK Case: IPAK Mounting: THT Kind of package: tube On-state resistance: 1.4Ω Drain current: 3.1A Drain-source voltage: 500V Technology: CoolMOS™ CE Kind of channel: enhanced Type of transistor: N-MOSFET Gate-source voltage: ±20V Power dissipation: 25W Polarisation: unipolar |
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IAUS165N08S5N029ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W Case: PG-HSOG-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 660A Drain-source voltage: 80V Drain current: 165A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V |
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IAUT165N08S5N029ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8 Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-HSOF-8 Drain-source voltage: 80V Drain current: 165A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Kind of package: reel; tape Mounting: SMD Gate charge: 31nC |
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| IPD60R380C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.7A Pulsed drain current: 30A Power dissipation: 83W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhanced |
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IRFR3709ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 86A Power dissipation: 79W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFR3709ZTRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 86A Power dissipation: 79W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPT004N03LATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 300A Pulsed drain current: 1.2kA Power dissipation: 300W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 0.4mΩ Mounting: SMD Gate charge: 53nC Kind of package: tape Kind of channel: enhanced |
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IPD30N08S222ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 30A; 136W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 75V Drain current: 30A Power dissipation: 136W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 21.5mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhanced |
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| IPD90N06S407ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 63A Pulsed drain current: 360A Power dissipation: 79W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced |
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IPB090N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 71W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhanced |
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| DDB6U104N16RRBPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 350W Case: AG-ECONO2B Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Power dissipation: 350W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoBRIDGE™ |
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| DDB6U134N16RRBPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 500W Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 70A Pulsed collector current: 150A Power dissipation: 500W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoBRIDGE™ Topology: boost chopper; NTC thermistor; three-phase diode bridge Case: AG-ECONO2B Max. off-state voltage: 1.6kV |
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IPA60R400CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.3A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 272 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS5120-2EKA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14 Mounting: SMD Supply voltage: 8...18V DC Kind of output: N-Channel Technology: PROFET™+ 12V Kind of integrated circuit: high-side Case: SO14 On-state resistance: 0.22Ω Output current: 2A Type of integrated circuit: power switch Number of channels: 2 |
auf Bestellung 1959 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2301SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Power: 625mW Case: SO8 Mounting: SMD Kind of package: tube Turn-on time: 330ns Turn-off time: 250ns Output current: -350...200mA Operating temperature: -40...125°C Topology: MOSFET half-bridge Voltage class: 600V Supply voltage: 5...20V DC Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: gate driver; high-/low-side |
Produkt ist nicht verfügbar |
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IPB80N04S2H4ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 103nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IAUC80N04S6L032ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 66A Pulsed drain current: 320A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IAUA180N04S5N012AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Pulsed drain current: 720A Power dissipation: 125W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IAUC120N06S5L032ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Pulsed drain current: 364A Power dissipation: 94W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 51.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IAUC120N06S5N017ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 757A Power dissipation: 167W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 95.9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFP4868PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 300V Drain current: 70A Power dissipation: 517W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP023N04NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 90A Power dissipation: 167W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IDH02G120C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; PG-TO220-2; 75W Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.4V Max. forward impulse current: 37A Leakage current: 1.2µA Power dissipation: 75W Technology: CoolSiC™ 5G; SiC Kind of package: tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IDH02G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 2A; PG-TO220-2; 36W Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 650V Load current: 2A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.8V Max. forward impulse current: 22A Leakage current: 0.4µA Power dissipation: 36W Technology: CoolSiC™ 5G; SiC Kind of package: tube Heatsink thickness: 1.17...137mm |
Produkt ist nicht verfügbar |
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IPB015N08N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 180A On-state resistance: 1.5mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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AIKW20N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 166W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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IRLR8103VTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 89A Power dissipation: 89W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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| T560N14TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 809A; 559A; Igt: 200mA Type of thyristor: hockey-puck Max. off-state voltage: 1.4kV Max. load current: 809A Load current: 559A Gate current: 200mA Case: BG-T4814K0-1 Mounting: Press-Pack Kind of package: in-tray Max. forward impulse current: 8kA Features of semiconductor devices: phase controlled thyristor (PCT) |
Produkt ist nicht verfügbar |
| XMC1201T038F0064ABXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-38
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Case: PG-TSSOP-38
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Produkt ist nicht verfügbar
| BSC066N06NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPB026N06NATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| IRFH5406TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFB7540PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 1.33 EUR |
| 62+ | 1.17 EUR |
| 96+ | 0.75 EUR |
| 101+ | 0.71 EUR |
| IRFS7540TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhanced
Trade name: StrongIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhanced
Trade name: StrongIRFET
Produkt ist nicht verfügbar
| XMC4108F64K64ABXQMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Produkt ist nicht verfügbar
| XMC4108Q48K64ABXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 8
Kind of architecture: Cortex M4
Family: XMC4100
Memory: 20kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Type of integrated circuit: ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 21
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Produkt ist nicht verfügbar
| IPI032N06N3GAKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP052N06L3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain current: 80A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain current: 80A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 32+ | 2.25 EUR |
| 41+ | 1.74 EUR |
| 62+ | 1.16 EUR |
| 66+ | 1.09 EUR |
| IRF7501TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.4A; 1.2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Power dissipation: 1.2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.4A; 1.2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Power dissipation: 1.2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7506TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8
Technology: HEXFET®
Mounting: SMD
Case: SO8
Kind of package: reel
Power dissipation: 1.25W
Polarisation: unipolar
Kind of channel: enhanced
Drain-source voltage: -30V
Drain current: -1.7A
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8
Technology: HEXFET®
Mounting: SMD
Case: SO8
Kind of package: reel
Power dissipation: 1.25W
Polarisation: unipolar
Kind of channel: enhanced
Drain-source voltage: -30V
Drain current: -1.7A
Type of transistor: P-MOSFET x2
Produkt ist nicht verfügbar
| IRF7507TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 2.4/-1A; 1.25W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 2.4/-1A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 0.135/0.27Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 2.4/-1A; 1.25W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 2.4/-1A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 0.135/0.27Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7509TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2A; 1.25W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.11/0.2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2A; 1.25W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.11/0.2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SMBT3904SH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Mounting: SMD
Polarisation: bipolar
Case: SOT363
Power dissipation: 0.25W
Frequency: 300MHz
Collector-emitter voltage: 40V
Collector current: 0.2A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Mounting: SMD
Polarisation: bipolar
Case: SOT363
Power dissipation: 0.25W
Frequency: 300MHz
Collector-emitter voltage: 40V
Collector current: 0.2A
Type of transistor: NPN
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 113+ | 0.63 EUR |
| DD260N16K |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| TT260N22KOFHOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| SAK-TC1797-384F150E |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Type of integrated circuit: microcontroller
Case: BGA416
Memory: 3MB FLASH
Mounting: SMD
Supply voltage: 3.5...5V DC
Interface: I2C; SPI; UART
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Type of integrated circuit: microcontroller
Case: BGA416
Memory: 3MB FLASH
Mounting: SMD
Supply voltage: 3.5...5V DC
Interface: I2C; SPI; UART
Produkt ist nicht verfügbar
| XMC1100T038F0016ABXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Case: PG-TSSOP-38
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBFLASH,16kBSRAM
Case: PG-TSSOP-38
Memory: 16kB FLASH; 16kB SRAM
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
| XMC1100T038F0032ABXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,32kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 32kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 4
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...85°C
Interface: GPIO
Integrated circuit features: EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Produkt ist nicht verfügbar
| XMC1100T038X0064ABXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Interface: GPIO
Number of inputs/outputs: 34
Number of 16bit timers: 4
Integrated circuit features: EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1100
Memory: 16kB SRAM; 64kB FLASH
Case: PG-TSSOP-38
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
| XMC1202Q024X0032ABXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-24
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-24
Number of inputs/outputs: 22
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Produkt ist nicht verfügbar
| XMC1202Q040X0032ABXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-40
Number of inputs/outputs: 26
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,32kBFLASH; XMC1200
Case: PG-VQFN-40
Number of inputs/outputs: 26
Number of 16bit timers: 4
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1200
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...105°C
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: ARM microcontroller
Interface: GPIO; USIC x2
Produkt ist nicht verfügbar
| BTS723GW |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...4.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 53mΩ
Supply voltage: 7...58V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...4.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 53mΩ
Supply voltage: 7...58V DC
Technology: Classic PROFET
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 6.66 EUR |
| 14+ | 5.32 EUR |
| 15+ | 5.02 EUR |
| IPD35N10S3L26ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR2307ZTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK
Power dissipation: 110W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DPAK
Drain-source voltage: 75V
Drain current: 53A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 110W; DPAK
Power dissipation: 110W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DPAK
Drain-source voltage: 75V
Drain current: 53A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IDW15G120C5BFKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; PG-TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Case: PG-TO247-3
Kind of package: tube
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 160A
Leakage current: 8µA
Power dissipation: 200W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; PG-TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Case: PG-TO247-3
Kind of package: tube
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 160A
Leakage current: 8µA
Power dissipation: 200W
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 10.67 EUR |
| IDW20G120C5BFKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 180A
Leakage current: 12µA
Max. off-state voltage: 1.2kV
Power dissipation: 250W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.4V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 180A
Leakage current: 12µA
Max. off-state voltage: 1.2kV
Power dissipation: 250W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.4V
Produkt ist nicht verfügbar
| IDW20G65C5BXKSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; PG-TO247-3; 130W
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 46A
Leakage current: 2µA
Max. off-state voltage: 650V
Power dissipation: 130W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; PG-TO247-3; 130W
Case: PG-TO247-3
Mounting: THT
Technology: CoolSiC™ 5G; SiC
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 46A
Leakage current: 2µA
Max. off-state voltage: 650V
Power dissipation: 130W
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 1.8V
Produkt ist nicht verfügbar
| IPD50P04P413ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPD50P04P4L11ATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPD50R500CEAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPU50R1K4CEBKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Case: IPAK
Mounting: THT
Kind of package: tube
On-state resistance: 1.4Ω
Drain current: 3.1A
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Power dissipation: 25W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 25W; IPAK
Case: IPAK
Mounting: THT
Kind of package: tube
On-state resistance: 1.4Ω
Drain current: 3.1A
Drain-source voltage: 500V
Technology: CoolMOS™ CE
Kind of channel: enhanced
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Power dissipation: 25W
Polarisation: unipolar
Produkt ist nicht verfügbar
| IAUS165N08S5N029ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Pulsed drain current: 660A
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
Pulsed drain current: 660A
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 31nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| IAUT165N08S5N029ATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HSOF-8
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Gate charge: 31nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-HSOF-8
Drain-source voltage: 80V
Drain current: 165A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Kind of package: reel; tape
Mounting: SMD
Gate charge: 31nC
Produkt ist nicht verfügbar
| IPD60R380C6ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR3709ZTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR3709ZTRRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPT004N03LATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300A; Idm: 1200A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 300W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPD30N08S222ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 30A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 21.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 30A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 21.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPD90N06S407ATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Pulsed drain current: 360A
Power dissipation: 79W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; Idm: 360A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Pulsed drain current: 360A
Power dissipation: 79W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPB090N06N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 71W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DDB6U104N16RRBPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 350W
Case: AG-ECONO2B
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 350W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoBRIDGE™
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 350W
Case: AG-ECONO2B
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 350W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoBRIDGE™
Produkt ist nicht verfügbar
| DDB6U134N16RRBPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 500W
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 70A
Pulsed collector current: 150A
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoBRIDGE™
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2B
Max. off-state voltage: 1.6kV
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 500W
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 70A
Pulsed collector current: 150A
Power dissipation: 500W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoBRIDGE™
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Case: AG-ECONO2B
Max. off-state voltage: 1.6kV
Produkt ist nicht verfügbar
| IPA60R400CEXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.3A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.3A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 272 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 34+ | 2.14 EUR |
| 37+ | 1.94 EUR |
| 43+ | 1.7 EUR |
| 45+ | 1.6 EUR |
| 50+ | 1.54 EUR |
| BTS5120-2EKA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Mounting: SMD
Supply voltage: 8...18V DC
Kind of output: N-Channel
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Case: SO14
On-state resistance: 0.22Ω
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 2
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; SO14
Mounting: SMD
Supply voltage: 8...18V DC
Kind of output: N-Channel
Technology: PROFET™+ 12V
Kind of integrated circuit: high-side
Case: SO14
On-state resistance: 0.22Ω
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 2
auf Bestellung 1959 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 1.97 EUR |
| 41+ | 1.77 EUR |
| 53+ | 1.37 EUR |
| 55+ | 1.3 EUR |
| 1000+ | 1.26 EUR |
| IRS2301SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Case: SO8
Mounting: SMD
Kind of package: tube
Turn-on time: 330ns
Turn-off time: 250ns
Output current: -350...200mA
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Case: SO8
Mounting: SMD
Kind of package: tube
Turn-on time: 330ns
Turn-off time: 250ns
Output current: -350...200mA
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Voltage class: 600V
Supply voltage: 5...20V DC
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Produkt ist nicht verfügbar
| IPB80N04S2H4ATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IAUC80N04S6L032ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 66A
Pulsed drain current: 320A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 66A
Pulsed drain current: 320A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IAUA180N04S5N012AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IAUC120N06S5L032ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 364A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 364A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IAUC120N06S5N017ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 757A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 757A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFP4868PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 10.15 EUR |
| 10+ | 7.35 EUR |
| IPP023N04NGXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IDH02G120C5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; PG-TO220-2; 75W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.4V
Max. forward impulse current: 37A
Leakage current: 1.2µA
Power dissipation: 75W
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; PG-TO220-2; 75W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.4V
Max. forward impulse current: 37A
Leakage current: 1.2µA
Power dissipation: 75W
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 29+ | 2.55 EUR |
| 34+ | 2.12 EUR |
| 36+ | 1.99 EUR |
| 250+ | 1.96 EUR |
| 500+ | 1.92 EUR |
| IDH02G65C5 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 2A; PG-TO220-2; 36W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 22A
Leakage current: 0.4µA
Power dissipation: 36W
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Heatsink thickness: 1.17...137mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 2A; PG-TO220-2; 36W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 22A
Leakage current: 0.4µA
Power dissipation: 36W
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Heatsink thickness: 1.17...137mm
Produkt ist nicht verfügbar
| IPB015N08N5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Produkt ist nicht verfügbar
| AIKW20N60CTXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| IRLR8103VTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
| T560N14TOFXPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.4kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.4kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Produkt ist nicht verfügbar