IRF7506TRPBF ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - IRF7506TRPBF - IRF7506 30V DUAL P-CHANNEL HEXFET POWER
tariffCode: 85423990
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details IRF7506TRPBF ROCHESTER ELECTRONICS
Description: MOSFET 2P-CH 30V 1.7A MICRO8, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1.7A, Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V, Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: Micro8™, Part Status: Obsolete.
Weitere Produktangebote IRF7506TRPBF
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Verfügbarkeit |
Preis ohne MwSt |
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IRF7506TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET P-CH Si 30V 1.7A 8-Pin Micro T/R |
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IRF7506TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8 Technology: HEXFET® Mounting: SMD Case: SO8 Kind of package: reel Power dissipation: 1.25W Polarisation: unipolar Kind of channel: enhanced Drain-source voltage: -30V Drain current: -1.7A Type of transistor: P-MOSFET x2 Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRF7506TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2P-CH 30V 1.7A MICRO8 Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.7A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: Micro8™ Part Status: Obsolete |
Produkt ist nicht verfügbar |
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IRF7506TRPBF | Hersteller : Infineon / IR |
MOSFET MOSFT DUAL PCh -30V 1.7A Micro 8 |
Produkt ist nicht verfügbar |
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IRF7506TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -1.7A; 1.25W; SO8 Technology: HEXFET® Mounting: SMD Case: SO8 Kind of package: reel Power dissipation: 1.25W Polarisation: unipolar Kind of channel: enhanced Drain-source voltage: -30V Drain current: -1.7A Type of transistor: P-MOSFET x2 |
Produkt ist nicht verfügbar |