IDH02G65C5 Infineon Technologies
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Technische Details IDH02G65C5 Infineon Technologies
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 2A; PG-TO220-2; 36W, Type of diode: Schottky rectifying, Mounting: THT, Max. off-state voltage: 650V, Load current: 2A, Semiconductor structure: single diode, Case: PG-TO220-2, Max. forward voltage: 1.8V, Max. forward impulse current: 22A, Leakage current: 0.4µA, Power dissipation: 36W, Technology: CoolSiC™ 5G; SiC, Kind of package: tube, Heatsink thickness: 1.17...137mm, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IDH02G65C5
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IDH02G65C5 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 2A; PG-TO220-2; 36W Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 650V Load current: 2A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.8V Max. forward impulse current: 22A Leakage current: 0.4µA Power dissipation: 36W Technology: CoolSiC™ 5G; SiC Kind of package: tube Heatsink thickness: 1.17...137mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IDH02G65C5 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 2A; PG-TO220-2; 36W Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 650V Load current: 2A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.8V Max. forward impulse current: 22A Leakage current: 0.4µA Power dissipation: 36W Technology: CoolSiC™ 5G; SiC Kind of package: tube Heatsink thickness: 1.17...137mm |
Produkt ist nicht verfügbar |