IPP052N06L3GXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Kind of package: tube
Polarisation: unipolar
Power dissipation: 115W
Type of transistor: N-MOSFET
On-state resistance: 5.2mΩ
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain current: 80A
Drain-source voltage: 60V
Case: PG-TO220-3
Mounting: THT
auf Bestellung 93 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 43+ | 1.67 EUR |
| 48+ | 1.5 EUR |
| 54+ | 1.33 EUR |
| 62+ | 1.16 EUR |
| 65+ | 1.1 EUR |
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Technische Details IPP052N06L3GXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 60V 80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 58µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V.
Weitere Produktangebote IPP052N06L3GXKSA1 nach Preis ab 1.04 EUR bis 2.47 EUR
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IPP052N06L3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3 Kind of package: tube Polarisation: unipolar Power dissipation: 115W Type of transistor: N-MOSFET On-state resistance: 5.2mΩ Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain current: 80A Drain-source voltage: 60V Case: PG-TO220-3 Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 93 Stücke: Lieferzeit 7-14 Tag (e) |
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IPP052N06L3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 739 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP052N06L3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1330 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP052N06L3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 739 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP052N06L3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP052N06L3GXKSA1 Produktcode: 202355 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IPP052N06L3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP052N06L3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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 |
IPP052N06L3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 58µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V |
Produkt ist nicht verfügbar |
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IPP052N06L3GXKSA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 60V 80A TO220-3 OptiMOS 3 |
Produkt ist nicht verfügbar |