auf Bestellung 243 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 10.86 EUR |
| 10+ | 9.86 EUR |
| 25+ | 9.36 EUR |
| 100+ | 8.8 EUR |
| 240+ | 5.54 EUR |
| 480+ | 5.42 EUR |
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Technische Details AIKW20N60CTXKSA1 Infineon Technologies
Description: IC DISCRETE 600V TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A, Supplier Device Package: PG-TO247-3-41, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/199ns, Switching Energy: 310µJ (on), 460µJ (off), Test Condition: 400V, 20A, 12Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 166 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote AIKW20N60CTXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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AIKW20N60CTXKSA1 | Hersteller : Infineon Technologies |
 IGBT Chip with Fast Recovery Emitter Controlled Diode |
Produkt ist nicht verfügbar |
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AIKW20N60CTXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 166W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AIKW20N60CTXKSA1 | Hersteller : Infineon Technologies |
Description: IC DISCRETE 600V TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/199ns Switching Energy: 310µJ (on), 460µJ (off) Test Condition: 400V, 20A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 166 W Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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AIKW20N60CTXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 166W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |