auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.09 EUR |
| 10+ | 10.07 EUR |
| 25+ | 9.56 EUR |
| 100+ | 8.99 EUR |
| 240+ | 5.67 EUR |
| 480+ | 5.32 EUR |
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Technische Details AIKW20N60CTXKSA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A, Supplier Device Package: PG-TO247-3-41, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/199ns, Switching Energy: 310µJ (on), 460µJ (off), Test Condition: 400V, 20A, 12Ohm, 15V, Gate Charge: 120 nC, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 166 W, Qualification: AEC-Q101.
Weitere Produktangebote AIKW20N60CTXKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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AIKW20N60CTXKSA1 | Hersteller : Infineon Technologies |
 IGBT Chip with Fast Recovery Emitter Controlled Diode |
Produkt ist nicht verfügbar |
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AIKW20N60CTXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 166W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 60A Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AIKW20N60CTXKSA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 600V 40A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/199ns Switching Energy: 310µJ (on), 460µJ (off) Test Condition: 400V, 20A, 12Ohm, 15V Gate Charge: 120 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 166 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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AIKW20N60CTXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 166W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 60A Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.12µC |
Produkt ist nicht verfügbar |