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S28HS512TGABHB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Operating frequency: 200MHz
Kind of interface: serial
Memory: 512Mb FLASH
Case: BGA24
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
S29GL128S10DHB013 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 100ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: BGA64
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
S70GL02GS11FHB013 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 2Gb FLASH
Case: BGA64
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
FF450R12KT4 FF450R12KT4 INFINEON TECHNOLOGIES FF450R12KT4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Power dissipation: 2.4kW
Mechanical mounting: screw
Produkt ist nicht verfügbar
FF450R12KE4 FF450R12KE4 INFINEON TECHNOLOGIES FF450R12KE4-DTE.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Power dissipation: 2.4kW
Mechanical mounting: screw
Produkt ist nicht verfügbar
S25FL512SAGBHAC13 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Case: BGA24
Mounting: SMD
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Produkt ist nicht verfügbar
DDB6U205N16LHOSA1 DDB6U205N16LHOSA1 INFINEON TECHNOLOGIES DDB6U205N16LHOSA1.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 205A; screw
Case: AG-ISOPACK
Max. off-state voltage: 1.6kV
Version: module
Max. forward voltage: 1.47V
Load current: 205A
Max. forward impulse current: 1.375kA
Electrical mounting: screw
Type of bridge rectifier: three-phase
Leads: M5 screws
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
1+277.96 EUR
CY621472E30LL-45ZSXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Kind of interface: parallel
Memory: 4Mb SRAM
Case: TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Produkt ist nicht verfügbar
CY62147EV18LL-55BVXI INFINEON TECHNOLOGIES Infineon-CY62147EV18_4-Mbit_(256K_x_16)_Static_RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeacf33277 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 1.65...2.25V DC
Kind of interface: parallel
Memory: 4Mb SRAM
Case: VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Produkt ist nicht verfügbar
CY62147EV30LL-45B2XI INFINEON TECHNOLOGIES CY62147EV30_MoBL_RevT_6-26-20.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Kind of interface: parallel
Memory: 4Mb SRAM
Case: VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Produkt ist nicht verfügbar
TLV4906KFTSA1 TLV4906KFTSA1 INFINEON TECHNOLOGIES Category: Hall Sensors
Description: Sensor: Hall; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC; Temp: -40÷85°C
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
106+ 0.68 EUR
179+ 0.4 EUR
193+ 0.37 EUR
Mindestbestellmenge: 74
IRFSL7440PBF IRFSL7440PBF INFINEON TECHNOLOGIES irfs7440pbf.pdf?fileId=5546d462533600a40153563a95f721d5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 147A; Idm: 772A; 208W; TO262
Mounting: THT
Drain-source voltage: 40V
Drain current: 147A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 208W
Polarisation: unipolar
Kind of package: tube
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 772A
Case: TO262
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
59+ 1.22 EUR
68+ 1.06 EUR
77+ 0.93 EUR
82+ 0.87 EUR
Mindestbestellmenge: 54
CY7C1520KV18-333BZXI INFINEON TECHNOLOGIES Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
CY7C1618KV18-333BZXC INFINEON TECHNOLOGIES Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
CY7C2642KV18-333BZXC INFINEON TECHNOLOGIES ?docID=49089 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
CY14V101QS-SF108XIT INFINEON TECHNOLOGIES Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of interface: serial
Memory: 1Mb SRAM
Produkt ist nicht verfügbar
S25FL512SAGBHB213 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Mounting: SMD
Interface: QUAD SPI
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Case: BGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S25FS512SDSBHB213 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; BGA24
Operating temperature: -40...105°C
Mounting: SMD
Interface: QUAD SPI
Operating frequency: 80MHz
Kind of interface: serial
Memory: 512Mb FLASH
Case: BGA24
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
TLE42744GSV33HTMA1 INFINEON TECHNOLOGIES TLE42744.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 0.4A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4.7...40V
Produkt ist nicht verfügbar
CY15B004J-SXA INFINEON TECHNOLOGIES Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Interface: I2C
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Produkt ist nicht verfügbar
CY15B004J-SXAT INFINEON TECHNOLOGIES Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Interface: I2C
Kind of package: reel; tape
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Produkt ist nicht verfügbar
CY15B004J-SXE INFINEON TECHNOLOGIES Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3...3.6V DC
Interface: I2C
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Produkt ist nicht verfügbar
CY15B004J-SXET INFINEON TECHNOLOGIES Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3...3.6V DC
Interface: I2C
Kind of package: reel; tape
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Produkt ist nicht verfügbar
CY15B004Q-SXET INFINEON TECHNOLOGIES CY15B004Q_RevC_6-4-19.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3...3.6V DC
Interface: SPI
Kind of package: reel; tape
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 16MHz
Produkt ist nicht verfügbar
S27KS0642GABHV023 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 64Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Produkt ist nicht verfügbar
S70KS1282GABHV023 INFINEON TECHNOLOGIES Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 128Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Produkt ist nicht verfügbar
S80KS5122GABHV023 INFINEON TECHNOLOGIES Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 256Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Produkt ist nicht verfügbar
IDH08G65C6XKSA1 IDH08G65C6XKSA1 INFINEON TECHNOLOGIES IDH08G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; Ir: 62uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 37A
Leakage current: 62µA
Power dissipation: 63W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
auf Bestellung 28 Stücke:
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18+4.08 EUR
21+ 3.42 EUR
28+ 2.56 EUR
Mindestbestellmenge: 18
S25HS02GTDPBHB053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S25HS02GTDPBHV053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S28HS02GTFPBHV050 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S28HS02GTFPBHV053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
IRLHS2242TRPBF IRLHS2242TRPBF INFINEON TECHNOLOGIES irlhs2242pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: -20V
Drain current: -7.2A
Type of transistor: P-MOSFET
Power dissipation: 2.1W
auf Bestellung 3894 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
218+ 0.33 EUR
332+ 0.22 EUR
350+ 0.2 EUR
Mindestbestellmenge: 162
AUIRFR8405 AUIRFR8405 INFINEON TECHNOLOGIES AUIRFR8405.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 804A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
PVI5013RSPBF PVI5013RSPBF INFINEON TECHNOLOGIES pvi5013r.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Manufacturer series: PVI5013RPbF
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
HFA15TB60PBF HFA15TB60PBF INFINEON TECHNOLOGIES HFA15TB60PBF.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 29W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Power dissipation: 29W
Reverse recovery time: 74ns
Produkt ist nicht verfügbar
IPB180P04P403ATMA1 IPB180P04P403ATMA1 INFINEON TECHNOLOGIES IPB180P04P403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -180A; 150W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -40V
Drain current: -180A
On-state resistance: 2.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 0.19µC
Produkt ist nicht verfügbar
CY62168EV30LL-45BVXIT INFINEON TECHNOLOGIES ?docID=50111 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
CY62168EV30LL-45BVXI INFINEON TECHNOLOGIES Infineon-CY62168EV30_MOBL_16_MBIT_(2M_x_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebedce432c8 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
CY14B104M-ZSP25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104M-ZSP25XIT INFINEON TECHNOLOGIES ?docID=44757 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104M-ZSP45XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104M-ZSP45XIT INFINEON TECHNOLOGIES ?docID=44757 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP45XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP25XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP45XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108M-ZSP25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108M-ZSP25XIT INFINEON TECHNOLOGIES ?docID=50894 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108N-ZSP25XI INFINEON TECHNOLOGIES Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108N-ZSP45XI INFINEON TECHNOLOGIES Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108N-ZSP45XIT INFINEON TECHNOLOGIES ?docID=50893 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B116N-ZSP25XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B116N-ZSP25XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY7C10612G30-10ZSXI INFINEON TECHNOLOGIES Infineon-CY7C10612G_CY7C10612GE_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3fea63963&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
PVI5013RS-TPBF PVI5013RS-TPBF INFINEON TECHNOLOGIES PVI5013RS-TPBF.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 0.25ms
Manufacturer series: PVI5013RPbF
Produkt ist nicht verfügbar
CY14MB064Q2A-SXQ INFINEON TECHNOLOGIES download Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz
Case: SOIC8
Mounting: SMD
Frequency: 40MHz
Operating temperature: -40...105°C
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
Memory: 64kb SRAM
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
CY14MB064Q2A-SXQT INFINEON TECHNOLOGIES ?docID=46910 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz
Case: SOIC8
Mounting: SMD
Frequency: 40MHz
Operating temperature: -40...105°C
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
Memory: 64kb SRAM
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
S28HS512TGABHB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Operating frequency: 200MHz
Kind of interface: serial
Memory: 512Mb FLASH
Case: BGA24
Operating voltage: 1.7...2V
Produkt ist nicht verfügbar
S29GL128S10DHB013
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 100ns
Kind of interface: parallel
Memory: 128Mb FLASH
Case: BGA64
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
S70GL02GS11FHB013 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Mounting: SMD
Operating temperature: -40...105°C
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 110ns
Kind of interface: parallel
Memory: 2Gb FLASH
Case: BGA64
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
FF450R12KT4 FF450R12KT4.pdf
FF450R12KT4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Power dissipation: 2.4kW
Mechanical mounting: screw
Produkt ist nicht verfügbar
FF450R12KE4 FF450R12KE4-DTE.pdf
FF450R12KE4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Power dissipation: 2.4kW
Mechanical mounting: screw
Produkt ist nicht verfügbar
S25FL512SAGBHAC13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Case: BGA24
Mounting: SMD
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Produkt ist nicht verfügbar
DDB6U205N16LHOSA1 DDB6U205N16LHOSA1.pdf
DDB6U205N16LHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 205A; screw
Case: AG-ISOPACK
Max. off-state voltage: 1.6kV
Version: module
Max. forward voltage: 1.47V
Load current: 205A
Max. forward impulse current: 1.375kA
Electrical mounting: screw
Type of bridge rectifier: three-phase
Leads: M5 screws
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+277.96 EUR
CY621472E30LL-45ZSXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Kind of interface: parallel
Memory: 4Mb SRAM
Case: TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Produkt ist nicht verfügbar
CY62147EV18LL-55BVXI Infineon-CY62147EV18_4-Mbit_(256K_x_16)_Static_RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeacf33277
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 1.65...2.25V DC
Kind of interface: parallel
Memory: 4Mb SRAM
Case: VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 55ns
Produkt ist nicht verfügbar
CY62147EV30LL-45B2XI CY62147EV30_MoBL_RevT_6-26-20.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.2...3.6V DC
Kind of interface: parallel
Memory: 4Mb SRAM
Case: VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Produkt ist nicht verfügbar
TLV4906KFTSA1
TLV4906KFTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC; Temp: -40÷85°C
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
74+0.97 EUR
106+ 0.68 EUR
179+ 0.4 EUR
193+ 0.37 EUR
Mindestbestellmenge: 74
IRFSL7440PBF irfs7440pbf.pdf?fileId=5546d462533600a40153563a95f721d5
IRFSL7440PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 147A; Idm: 772A; 208W; TO262
Mounting: THT
Drain-source voltage: 40V
Drain current: 147A
On-state resistance: 2.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 208W
Polarisation: unipolar
Kind of package: tube
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 772A
Case: TO262
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
54+1.34 EUR
59+ 1.22 EUR
68+ 1.06 EUR
77+ 0.93 EUR
82+ 0.87 EUR
Mindestbestellmenge: 54
CY7C1520KV18-333BZXI Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
CY7C1618KV18-333BZXC Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
CY7C2642KV18-333BZXC ?docID=49089
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
CY14V101QS-SF108XIT Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; SOIC16; -40÷85°C; serial
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Supply voltage: 1.71...2V DC; 2.7...3.6V DC
Frequency: 108MHz
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 128kx8bit
Kind of interface: serial
Memory: 1Mb SRAM
Produkt ist nicht verfügbar
S25FL512SAGBHB213 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Mounting: SMD
Interface: QUAD SPI
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Case: BGA24
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S25FS512SDSBHB213 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; BGA24
Operating temperature: -40...105°C
Mounting: SMD
Interface: QUAD SPI
Operating frequency: 80MHz
Kind of interface: serial
Memory: 512Mb FLASH
Case: BGA24
Operating voltage: 1.7...2V
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
TLE42744GSV33HTMA1 TLE42744.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; PG-SOT223-4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 3.3V
Output current: 0.4A
Case: PG-SOT223-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4.7...40V
Produkt ist nicht verfügbar
CY15B004J-SXA Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Interface: I2C
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Produkt ist nicht verfügbar
CY15B004J-SXAT Infineon-CY15B004J_4-Kbit_(512_x_8)_Serial_(I2C)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3263c6a2f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SOIC8
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Interface: I2C
Kind of package: reel; tape
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Produkt ist nicht verfügbar
CY15B004J-SXE Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3...3.6V DC
Interface: I2C
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Produkt ist nicht verfügbar
CY15B004J-SXET Infineon-CY15B004J_4_KBIT_(512_X_8)_SERIAL_(I2C)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee394036a67&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 3÷3.6VDC; 3.4MHz; SOIC8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3...3.6V DC
Interface: I2C
Kind of package: reel; tape
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 3.4MHz
Produkt ist nicht verfügbar
CY15B004Q-SXET CY15B004Q_RevC_6-4-19.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SOIC8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3...3.6V DC
Interface: SPI
Kind of package: reel; tape
Memory: 4kb FRAM
Case: SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory organisation: 512x8bit
Clock frequency: 16MHz
Produkt ist nicht verfügbar
S27KS0642GABHV023 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 64Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Produkt ist nicht verfügbar
S70KS1282GABHV023
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 128Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Produkt ist nicht verfügbar
S80KS5122GABHV023 Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Mounting: SMD
Case: FBGA24
Operating temperature: -40...105°C
Kind of package: reel; tape
Memory: 256Mb DRAM
Supply voltage: 1.7...2V DC
Type of integrated circuit: DRAM memory
Interface: HyperBus
Kind of memory: DRAM
Access time: 35ns
Clock frequency: 200MHz
Produkt ist nicht verfügbar
IDH08G65C6XKSA1 IDH08G65C6.pdf
IDH08G65C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; Ir: 62uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 37A
Leakage current: 62µA
Power dissipation: 63W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+4.08 EUR
21+ 3.42 EUR
28+ 2.56 EUR
Mindestbestellmenge: 18
S25HS02GTDPBHB053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S25HS02GTDPBHV053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S28HS02GTFPBHV050
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
S28HS02GTFPBHV053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Kind of interface: serial
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Interface: octal
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
IRLHS2242TRPBF irlhs2242pbf.pdf
IRLHS2242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: -20V
Drain current: -7.2A
Type of transistor: P-MOSFET
Power dissipation: 2.1W
auf Bestellung 3894 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
162+0.44 EUR
218+ 0.33 EUR
332+ 0.22 EUR
350+ 0.2 EUR
Mindestbestellmenge: 162
AUIRFR8405 AUIRFR8405.pdf
AUIRFR8405
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 804A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
PVI5013RSPBF pvi5013r.pdf
PVI5013RSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Manufacturer series: PVI5013RPbF
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+14.3 EUR
Mindestbestellmenge: 5
HFA15TB60PBF HFA15TB60PBF.pdf
HFA15TB60PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 29W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Power dissipation: 29W
Reverse recovery time: 74ns
Produkt ist nicht verfügbar
IPB180P04P403ATMA1 IPB180P04P403.pdf
IPB180P04P403ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -180A; 150W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -40V
Drain current: -180A
On-state resistance: 2.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Gate charge: 0.19µC
Produkt ist nicht verfügbar
CY62168EV30LL-45BVXIT ?docID=50111
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
CY62168EV30LL-45BVXI Infineon-CY62168EV30_MOBL_16_MBIT_(2M_x_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebedce432c8
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
CY14B104M-ZSP25XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104M-ZSP25XIT ?docID=44757
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104M-ZSP45XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104M-ZSP45XIT ?docID=44757
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP25XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP45XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP25XIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B104NA-ZSP45XIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108M-ZSP25XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108M-ZSP25XIT ?docID=50894
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108N-ZSP25XI Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108N-ZSP45XI Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B108N-ZSP45XIT ?docID=50893
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B116N-ZSP25XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY14B116N-ZSP25XIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 25ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 25ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
CY7C10612G30-10ZSXI Infineon-CY7C10612G_CY7C10612GE_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3fea63963&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
PVI5013RS-TPBF PVI5013RS-TPBF.pdf
PVI5013RS-TPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 0.25ms
Manufacturer series: PVI5013RPbF
Produkt ist nicht verfügbar
CY14MB064Q2A-SXQ download
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz
Case: SOIC8
Mounting: SMD
Frequency: 40MHz
Operating temperature: -40...105°C
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
Memory: 64kb SRAM
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
CY14MB064Q2A-SXQT ?docID=46910
Hersteller: INFINEON TECHNOLOGIES
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; serial; 40MHz
Case: SOIC8
Mounting: SMD
Frequency: 40MHz
Operating temperature: -40...105°C
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
Memory: 64kb SRAM
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
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