IPP60R180P7XKSA1 Infineon Technologies
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 55+ | 2.76 EUR |
| 66+ | 2.24 EUR |
| 100+ | 1.73 EUR |
| 250+ | 1.57 EUR |
| 500+ | 1.34 EUR |
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Technische Details IPP60R180P7XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 18A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V, Power Dissipation (Max): 72W (Tc), Vgs(th) (Max) @ Id: 4V @ 280µA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V.
Weitere Produktangebote IPP60R180P7XKSA1 nach Preis ab 1.49 EUR bis 4.73 EUR
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IPP60R180P7XKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 497 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R180P7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R180P7XKSA1 | Hersteller : Infineon Technologies |
MOSFETs Y |
auf Bestellung 4428 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP60R180P7XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 18A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 280µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V |
auf Bestellung 5055 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP60R180P7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R180P7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| IPP60R180P7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 53A Power dissipation: 72W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IPP60R180P7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 53A Power dissipation: 72W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |