Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (137771) > Seite 464 nach 2297
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
S25FL128SDSNFI000 | Infineon Technologies |
Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1823 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
CYW20705B0KWFBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA Packaging: Tape & Reel (TR) Package / Case: 50-WFBGA Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 5.5V Power - Output: 10dBm Protocol: Bluetooth v4.1 Current - Receiving: 31mA Data Rate (Max): 3Mbps Current - Transmitting: 65mA Supplier Device Package: 50-WFBGA (4.5x4) GPIO: 8 RF Family/Standard: Bluetooth Serial Interfaces: SPI, UART, USB DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
||||||||||||||||||
CYW20735PKML1G | Infineon Technologies |
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFN Packaging: Tray Package / Case: 60-VFQFN Exposed Pad Sensitivity: -94.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 3.3V Power - Output: 10dBm Protocol: Bluetooth v4.2 Current - Receiving: 8mA Data Rate (Max): 2Mbps Current - Transmitting: 18mA Supplier Device Package: 60-QFN (7x7) GPIO: 60 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, I2S, SPI, UART DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
||||||||||||||||||
CYW20730A1KML2GT | Infineon Technologies |
Description: IC RF TXRX+MCU BLUETOOTH 32VFQFN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Sensitivity: -88dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.8V Power - Output: 4dBm Protocol: Bluetooth v3.0 Current - Receiving: 26.6mA Data Rate (Max): 1Mbps Current - Transmitting: 24mA Supplier Device Package: 32-QFN (5x5) GPIO: 14 RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
||||||||||||||||||
CHL8104-03CRT | Infineon Technologies |
Description: IC REG BUCK 40VQFN Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: 0°C ~ 85°C Output Configuration: Positive Frequency - Switching: 200kHz ~ 1.2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-40-903 Synchronous Rectifier: No Control Features: Enable, Power Good Serial Interfaces: I²C Output Phases: 4 Clock Sync: No Part Status: Obsolete Number of Outputs: 5 |
Produkt ist nicht verfügbar |
||||||||||||||||||
TC277T64F200SDCKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGA Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active Number of I/O: 169 DigiKey Programmable: Not Verified |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
MR16 7W BOARD | Infineon Technologies |
Description: EVAL BOARD MR16 7W ILD4001 Packaging: Box Voltage - Output: 6.5V Voltage - Input: 12VAC Current - Output / Channel: 770mA Utilized IC / Part: ILD4001 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Discontinued at Digi-Key |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
MR16 10W BOARD | Infineon Technologies |
Description: EVAL BOARD MR16 10W ILD4001 Packaging: Box Voltage - Output: 6.6V Voltage - Input: 12VAC Current - Output / Channel: 1.02A Utilized IC / Part: ILD4001 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Discontinued at Digi-Key |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
CY14B108L-ZS45XI | Infineon Technologies |
Description: IC NVSRAM 8MBIT PAR 44TSOP II Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IPC70N04S5L4R2ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 70A 8TDSON-34 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 17µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 14790 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
BGA622E6327 | Infineon Technologies |
Description: IC AMP CELL 0HZ-2.4GHZ SOT343-4 Packaging: Bulk Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 0Hz ~ 2.4GHz RF Type: Cellular, GSM, PCS, CDMA, UMTS Voltage - Supply: 3V Gain: 17.5dB Current - Supply: 80mA Noise Figure: 2.1dB P1dB: 12dBm Test Frequency: 2GHz Supplier Device Package: PG-SOT343-4 Part Status: Active |
Produkt ist nicht verfügbar |
||||||||||||||||||
IPBE65R190CFD7AATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO263-7-11 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IPBE65R190CFD7AATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO263-7-11 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V |
auf Bestellung 968 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IPW65R190CFD7AXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 14A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO247-3 Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
||||||||||||||||||
IPW65R145CFD7AXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 17A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 420µA Supplier Device Package: PG-TO247-3 Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
||||||||||||||||||
IPBE65R145CFD7AATMA1 | Infineon Technologies | Description: AUTOMOTIVE PG-TO263-7 |
Produkt ist nicht verfügbar |
||||||||||||||||||
IPN10ELSXUMA1 | Infineon Technologies | Description: IC GATE DRVR HALF-BRIDGE SSOP-14 |
auf Bestellung 237500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
EVAL1ED020I12F2DBTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR 1ED020I12F2 Packaging: Bulk Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: 1ED020I12F2 Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IR3567AMGB02TRP | Infineon Technologies |
Description: IC REG BUCK 56VQFN Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz ~ 2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-56-900 Synchronous Rectifier: No Control Features: Enable, Power Good Serial Interfaces: I²C, PMBus, SMBus Output Phases: 6 Clock Sync: No Part Status: Obsolete Number of Outputs: 8 |
Produkt ist nicht verfügbar |
||||||||||||||||||
FS225R17OE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 350A 1450W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 350 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1450 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 600 pF @ 25 V |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IGT60R190D1ATMA1 | Infineon Technologies |
Description: GAN HV Packaging: Tape & Reel (TR) Part Status: Active |
Produkt ist nicht verfügbar |
||||||||||||||||||
SAK-TC265DE-40F200N BC | Infineon Technologies |
Description: IC MCU 32BIT 2.5MB FLASH 176LQFP Packaging: Tape & Reel (TR) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2.5MB (2.5M x 8) RAM Size: 240K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 16K x 8 Core Processor: TriCore™ Data Converters: A/D 53x12b SAR, Sigma-Delta Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LQFP-176-22 Part Status: Active |
Produkt ist nicht verfügbar |
||||||||||||||||||
F4200R17N3E4B58BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO3B-411 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: AG-ECONO3B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 16 nF @ 25 V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
DCSHIELDBTN7030TOBO1 | Infineon Technologies |
Description: DC-SHIELD_BTN7030 Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: BTN7030-1EPA Platform: Arduino Part Status: Active |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
DCSHIELDBTN9970LVTOBO1 | Infineon Technologies |
Description: DC SHIELD EVAL BOARD Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: BTN9970, BTN9990 Platform: Arduino Part Status: Active |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
2EDN7524RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.98V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 16357 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
2EDN8524RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.98V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 171 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
2EDN7523RXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSSOP-8 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.98V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 4968 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IPL65R230C7AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 10A 4VSON Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 2.4A, 10V Power Dissipation (Max): 67W (Tc) Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V |
auf Bestellung 5990 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
EVALIM67D120FLEXKITTOBO1 | Infineon Technologies |
Description: EVAL KIT FOR IM67D120 Packaging: Bulk Function: MEMS Omnidirectional Microphones Type: Audio Utilized IC / Part: IM67D120 Supplied Contents: Board(s) Embedded: No Part Status: Active |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
AN985B-BG-T-V1 | Infineon Technologies |
Description: CARDBUS-TO ETHERNET LAN CONTROLL Packaging: Bulk DigiKey Programmable: Not Verified |
auf Bestellung 1440 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
SAK-TC265DC-40F200W BC | Infineon Technologies | Description: IC MCU 32BIT |
Produkt ist nicht verfügbar |
||||||||||||||||||
SAK-TC265DC-40F200W BB | Infineon Technologies |
Description: IC MCU 32BIT 2.5MB FLASH 176LQFP Packaging: Tape & Reel (TR) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2.5MB (2.5M x 8) RAM Size: 240K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 96K x 8 Core Processor: TriCore™ Data Converters: A/D 50x12b SAR, Sigma-Delta Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LQFP-176-22 Number of I/O: 112 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
||||||||||||||||||
SAK-TC265DE-40F200W BB | Infineon Technologies | Description: IC MICROCONTROLLER |
Produkt ist nicht verfügbar |
||||||||||||||||||
SAK-TC265DE-40F200Q BB | Infineon Technologies | Description: IC MICROCONTROLLER |
Produkt ist nicht verfügbar |
||||||||||||||||||
S25FL116K0XBHI030 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 24BGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (6x8) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
||||||||||||||||||
S25FL116K0XMFN041 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
||||||||||||||||||
S25FL116K0XNFB013 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
||||||||||||||||||
S25FL116K0XBHB030 | Infineon Technologies | Description: IC FLASH 16MBIT SPI/QUAD 24BGA |
Produkt ist nicht verfügbar |
||||||||||||||||||
S25FL116K0XMFB041 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
||||||||||||||||||
S25FL116K0XNFB010 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC Packaging: Tray Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
||||||||||||||||||
S25FL116K0XMFB043 | Infineon Technologies |
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
||||||||||||||||||
ISC036N04NM5ATMA1 | Infineon Technologies |
Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V Power Dissipation (Max): 3W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 23µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
ISC036N04NM5ATMA1 | Infineon Technologies |
Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V Power Dissipation (Max): 3W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 23µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V |
auf Bestellung 4358 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
TDA21590AUMA1 | Infineon Technologies |
Description: IC REG BUCK 39QFN Packaging: Cut Tape (CT) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Output Configuration: Positive Topology: Buck Supplier Device Package: PG-IQFN-39 Synchronous Rectifier: No Part Status: Active |
Produkt ist nicht verfügbar |
||||||||||||||||||
BB 689 E7903 | Infineon Technologies | Description: DIODE TUNING 30V 20MA SCD-80 |
Produkt ist nicht verfügbar |
||||||||||||||||||
IDD05SG60C | Infineon Technologies |
Description: DIODE SIL CARB 600V 5A TO252-3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 110pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IDH03SG60C | Infineon Technologies |
Description: DIODE SIL CARB 600V 3A TO220-2-2 Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 60pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
auf Bestellung 68889 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IMZA65R083M1HXKSA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET, PG-TO247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 3.3mA Supplier Device Package: PG-TO247-4-3 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -2V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IMBG120R060M1HXTMA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 36A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V FET Feature: Standard Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 5.6mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IMBG120R060M1HXTMA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 36A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V FET Feature: Standard Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 5.6mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
BTS117AKSA1 | Infineon Technologies |
Description: IC PWR SWITCH Features: Auto Restart, Slew Rate Controlled Packaging: Tube Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-3-1 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRU431ALCS | Infineon Technologies |
Description: IC VREF SHUNT ADJ 0.5% 8SOIC Tolerance: ±0.5% Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: 0°C ~ 70°C (TA) Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 1.24V Part Status: Obsolete Current - Cathode: 80 µA Current - Output: 10 mA Voltage - Output (Max): 15 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRU431-L5TR | Infineon Technologies |
Description: IC VREF SHUNT ADJ 1% SOT23-5 Tolerance: ±1% Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: 0°C ~ 70°C (TA) Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 1.24V Part Status: Obsolete Current - Cathode: 80 µA Current - Output: 10 mA Voltage - Output (Max): 15 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRU431LCS | Infineon Technologies |
Description: IC VREF SHUNT ADJ 1% 8SOIC Tolerance: ±1% Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: 0°C ~ 70°C (TA) Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 1.24V Part Status: Obsolete Current - Cathode: 80 µA Current - Output: 10 mA Voltage - Output (Max): 15 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRU431-L3TR | Infineon Technologies |
Description: IC VREF SHUNT ADJ 1% SOT23 Tolerance: ±1% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: 0°C ~ 70°C (TA) Supplier Device Package: Micro3™/SOT-23 Voltage - Output (Min/Fixed): 1.24V Part Status: Obsolete Current - Cathode: 80 µA Current - Output: 10 mA Voltage - Output (Max): 15 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRU431LCSTR | Infineon Technologies |
Description: IC VREF SHUNT ADJ 1% 8SOIC Tolerance: ±1% Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: 0°C ~ 70°C (TA) Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 1.24V Part Status: Obsolete Current - Cathode: 80 µA Current - Output: 10 mA Voltage - Output (Max): 15 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
IPC60R070CFD7X7SA1 | Infineon Technologies | Description: MOSFET N-CH HI POWER WAFER |
Produkt ist nicht verfügbar |
||||||||||||||||||
IPP040N06NF2SAKMA1 | Infineon Technologies |
Description: MOSFET N-CH Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 109A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 52µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V |
auf Bestellung 305 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
IFF150B12U1E4BOMA1 | Infineon Technologies | Description: INTELLIGENT POWER MODULE (IPM) |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
|
S25FL128SDSNFI000 |
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1823 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.48 EUR |
10+ | 6.79 EUR |
25+ | 6.64 EUR |
40+ | 6.61 EUR |
80+ | 5.92 EUR |
338+ | 5.9 EUR |
676+ | 5.69 EUR |
1014+ | 5.41 EUR |
CYW20705B0KWFBGT |
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW20735PKML1G |
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFN
Packaging: Tray
Package / Case: 60-VFQFN Exposed Pad
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 10dBm
Protocol: Bluetooth v4.2
Current - Receiving: 8mA
Data Rate (Max): 2Mbps
Current - Transmitting: 18mA
Supplier Device Package: 60-QFN (7x7)
GPIO: 60
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUETOOTH 60VFQFN
Packaging: Tray
Package / Case: 60-VFQFN Exposed Pad
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 10dBm
Protocol: Bluetooth v4.2
Current - Receiving: 8mA
Data Rate (Max): 2Mbps
Current - Transmitting: 18mA
Supplier Device Package: 60-QFN (7x7)
GPIO: 60
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYW20730A1KML2GT |
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 32VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.6mA
Data Rate (Max): 1Mbps
Current - Transmitting: 24mA
Supplier Device Package: 32-QFN (5x5)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUETOOTH 32VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.6mA
Data Rate (Max): 1Mbps
Current - Transmitting: 24mA
Supplier Device Package: 32-QFN (5x5)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CHL8104-03CRT |
Hersteller: Infineon Technologies
Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-903
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C
Output Phases: 4
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 5
Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-903
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C
Output Phases: 4
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 5
Produkt ist nicht verfügbar
TC277T64F200SDCKXUMA2 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 59.56 EUR |
MR16 7W BOARD |
Hersteller: Infineon Technologies
Description: EVAL BOARD MR16 7W ILD4001
Packaging: Box
Voltage - Output: 6.5V
Voltage - Input: 12VAC
Current - Output / Channel: 770mA
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Discontinued at Digi-Key
Description: EVAL BOARD MR16 7W ILD4001
Packaging: Box
Voltage - Output: 6.5V
Voltage - Input: 12VAC
Current - Output / Channel: 770mA
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Discontinued at Digi-Key
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 30.11 EUR |
MR16 10W BOARD |
Hersteller: Infineon Technologies
Description: EVAL BOARD MR16 10W ILD4001
Packaging: Box
Voltage - Output: 6.6V
Voltage - Input: 12VAC
Current - Output / Channel: 1.02A
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Discontinued at Digi-Key
Description: EVAL BOARD MR16 10W ILD4001
Packaging: Box
Voltage - Output: 6.6V
Voltage - Input: 12VAC
Current - Output / Channel: 1.02A
Utilized IC / Part: ILD4001
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Discontinued at Digi-Key
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 35.38 EUR |
CY14B108L-ZS45XI |
Hersteller: Infineon Technologies
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 33.88 EUR |
IPC70N04S5L4R2ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 14790 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.72 EUR |
13+ | 1.41 EUR |
100+ | 1.1 EUR |
500+ | 0.93 EUR |
1000+ | 0.76 EUR |
2000+ | 0.71 EUR |
BGA622E6327 |
Hersteller: Infineon Technologies
Description: IC AMP CELL 0HZ-2.4GHZ SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: Cellular, GSM, PCS, CDMA, UMTS
Voltage - Supply: 3V
Gain: 17.5dB
Current - Supply: 80mA
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 2GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
Description: IC AMP CELL 0HZ-2.4GHZ SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: Cellular, GSM, PCS, CDMA, UMTS
Voltage - Supply: 3V
Gain: 17.5dB
Current - Supply: 80mA
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 2GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
Produkt ist nicht verfügbar
IPBE65R190CFD7AATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-7-11
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Description: MOSFET N-CH 650V 14A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-7-11
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Produkt ist nicht verfügbar
IPBE65R190CFD7AATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-7-11
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Description: MOSFET N-CH 650V 14A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO263-7-11
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
auf Bestellung 968 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10 EUR |
10+ | 8.97 EUR |
100+ | 7.35 EUR |
500+ | 6.26 EUR |
IPW65R190CFD7AXKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPW65R145CFD7AXKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IPBE65R145CFD7AATMA1 |
Hersteller: Infineon Technologies
Description: AUTOMOTIVE PG-TO263-7
Description: AUTOMOTIVE PG-TO263-7
Produkt ist nicht verfügbar
IPN10ELSXUMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE SSOP-14
Description: IC GATE DRVR HALF-BRIDGE SSOP-14
auf Bestellung 237500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
473+ | 1.12 EUR |
EVAL1ED020I12F2DBTOBO1 |
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 1ED020I12F2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED020I12F2
Part Status: Active
Description: EVAL BOARD FOR 1ED020I12F2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED020I12F2
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 74.66 EUR |
IR3567AMGB02TRP |
Hersteller: Infineon Technologies
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
Description: IC REG BUCK 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-56-900
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 6
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 8
Produkt ist nicht verfügbar
FS225R17OE4BOSA1 |
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 350A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 350 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
Description: IGBT MOD 1700V 350A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 350 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 710.32 EUR |
IGT60R190D1ATMA1 |
Produkt ist nicht verfügbar
SAK-TC265DE-40F200N BC |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 16K x 8
Core Processor: TriCore™
Data Converters: A/D 53x12b SAR, Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Description: IC MCU 32BIT 2.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 16K x 8
Core Processor: TriCore™
Data Converters: A/D 53x12b SAR, Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Produkt ist nicht verfügbar
F4200R17N3E4B58BPSA1 |
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 16 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 402.42 EUR |
DCSHIELDBTN7030TOBO1 |
Hersteller: Infineon Technologies
Description: DC-SHIELD_BTN7030
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTN7030-1EPA
Platform: Arduino
Part Status: Active
Description: DC-SHIELD_BTN7030
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTN7030-1EPA
Platform: Arduino
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 77.92 EUR |
DCSHIELDBTN9970LVTOBO1 |
Hersteller: Infineon Technologies
Description: DC SHIELD EVAL BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTN9970, BTN9990
Platform: Arduino
Part Status: Active
Description: DC SHIELD EVAL BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTN9970, BTN9990
Platform: Arduino
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 111.32 EUR |
2EDN7524RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 16357 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.62 EUR |
10+ | 2.34 EUR |
25+ | 2.22 EUR |
100+ | 1.83 EUR |
250+ | 1.71 EUR |
500+ | 1.51 EUR |
1000+ | 1.19 EUR |
2500+ | 1.11 EUR |
2EDN8524RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 171 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.6 EUR |
10+ | 2.33 EUR |
25+ | 2.21 EUR |
100+ | 1.82 EUR |
2EDN7523RXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4968 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.43 EUR |
10+ | 2.18 EUR |
25+ | 2.06 EUR |
100+ | 1.75 EUR |
250+ | 1.65 EUR |
500+ | 1.44 EUR |
1000+ | 1.19 EUR |
2500+ | 1.11 EUR |
IPL65R230C7AUMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 2.4A, 10V
Power Dissipation (Max): 67W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Description: MOSFET N-CH 650V 10A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 2.4A, 10V
Power Dissipation (Max): 67W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.63 EUR |
10+ | 3.85 EUR |
100+ | 3.07 EUR |
500+ | 2.59 EUR |
1000+ | 2.2 EUR |
EVALIM67D120FLEXKITTOBO1 |
Hersteller: Infineon Technologies
Description: EVAL KIT FOR IM67D120
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM67D120
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: EVAL KIT FOR IM67D120
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM67D120
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 45.13 EUR |
AN985B-BG-T-V1 |
Hersteller: Infineon Technologies
Description: CARDBUS-TO ETHERNET LAN CONTROLL
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: CARDBUS-TO ETHERNET LAN CONTROLL
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
102+ | 4.9 EUR |
SAK-TC265DC-40F200W BC |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT
Description: IC MCU 32BIT
Produkt ist nicht verfügbar
SAK-TC265DC-40F200W BB |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 50x12b SAR, Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Number of I/O: 112
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2.5MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 50x12b SAR, Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Number of I/O: 112
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
SAK-TC265DE-40F200W BB |
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
SAK-TC265DE-40F200Q BB |
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
Produkt ist nicht verfügbar
S25FL116K0XBHI030 |
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)S25FL116K0XMFN041 |
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S25FL116K0XNFB013 |
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S25FL116K0XBHB030 |
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
Produkt ist nicht verfügbar
S25FL116K0XMFB041 |
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S25FL116K0XNFB010 |
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
S25FL116K0XMFB043 |
Hersteller: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
ISC036N04NM5ATMA1 |
Hersteller: Infineon Technologies
Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V
Power Dissipation (Max): 3W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V
Power Dissipation (Max): 3W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Produkt ist nicht verfügbar
ISC036N04NM5ATMA1 |
Hersteller: Infineon Technologies
Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V
Power Dissipation (Max): 3W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Description: 40V 3.6M OPTIMOS MOSFET SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 49A, 10V
Power Dissipation (Max): 3W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 4358 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.94 EUR |
12+ | 1.59 EUR |
100+ | 1.23 EUR |
500+ | 1.05 EUR |
1000+ | 0.85 EUR |
2000+ | 0.8 EUR |
TDA21590AUMA1 |
Hersteller: Infineon Technologies
Description: IC REG BUCK 39QFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Supplier Device Package: PG-IQFN-39
Synchronous Rectifier: No
Part Status: Active
Description: IC REG BUCK 39QFN
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Supplier Device Package: PG-IQFN-39
Synchronous Rectifier: No
Part Status: Active
Produkt ist nicht verfügbar
BB 689 E7903 |
Hersteller: Infineon Technologies
Description: DIODE TUNING 30V 20MA SCD-80
Description: DIODE TUNING 30V 20MA SCD-80
Produkt ist nicht verfügbar
IDD05SG60C |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 5A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE SIL CARB 600V 5A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
IDH03SG60C |
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 3A TO220-2-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE SIL CARB 600V 3A TO220-2-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 68889 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
288+ | 1.69 EUR |
IMZA65R083M1HXKSA1 |
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Description: SILICON CARBIDE MOSFET, PG-TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 20.94 EUR |
10+ | 19.25 EUR |
IMBG120R060M1HXTMA1 |
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V
FET Feature: Standard
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V
Description: SICFET N-CH 1.2KV 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V
FET Feature: Standard
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V
Produkt ist nicht verfügbar
IMBG120R060M1HXTMA1 |
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V
FET Feature: Standard
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V
Description: SICFET N-CH 1.2KV 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V
FET Feature: Standard
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V
Produkt ist nicht verfügbar
BTS117AKSA1 |
Hersteller: Infineon Technologies
Description: IC PWR SWITCH
Features: Auto Restart, Slew Rate Controlled
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
Description: IC PWR SWITCH
Features: Auto Restart, Slew Rate Controlled
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
Produkt ist nicht verfügbar
IRU431ALCS |
Hersteller: Infineon Technologies
Description: IC VREF SHUNT ADJ 0.5% 8SOIC
Tolerance: ±0.5%
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 1.24V
Part Status: Obsolete
Current - Cathode: 80 µA
Current - Output: 10 mA
Voltage - Output (Max): 15 V
Description: IC VREF SHUNT ADJ 0.5% 8SOIC
Tolerance: ±0.5%
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 1.24V
Part Status: Obsolete
Current - Cathode: 80 µA
Current - Output: 10 mA
Voltage - Output (Max): 15 V
Produkt ist nicht verfügbar
IRU431-L5TR |
Hersteller: Infineon Technologies
Description: IC VREF SHUNT ADJ 1% SOT23-5
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Part Status: Obsolete
Current - Cathode: 80 µA
Current - Output: 10 mA
Voltage - Output (Max): 15 V
Description: IC VREF SHUNT ADJ 1% SOT23-5
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Part Status: Obsolete
Current - Cathode: 80 µA
Current - Output: 10 mA
Voltage - Output (Max): 15 V
Produkt ist nicht verfügbar
IRU431LCS |
Hersteller: Infineon Technologies
Description: IC VREF SHUNT ADJ 1% 8SOIC
Tolerance: ±1%
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 1.24V
Part Status: Obsolete
Current - Cathode: 80 µA
Current - Output: 10 mA
Voltage - Output (Max): 15 V
Description: IC VREF SHUNT ADJ 1% 8SOIC
Tolerance: ±1%
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 1.24V
Part Status: Obsolete
Current - Cathode: 80 µA
Current - Output: 10 mA
Voltage - Output (Max): 15 V
Produkt ist nicht verfügbar
IRU431-L3TR |
Hersteller: Infineon Technologies
Description: IC VREF SHUNT ADJ 1% SOT23
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: Micro3™/SOT-23
Voltage - Output (Min/Fixed): 1.24V
Part Status: Obsolete
Current - Cathode: 80 µA
Current - Output: 10 mA
Voltage - Output (Max): 15 V
Description: IC VREF SHUNT ADJ 1% SOT23
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: Micro3™/SOT-23
Voltage - Output (Min/Fixed): 1.24V
Part Status: Obsolete
Current - Cathode: 80 µA
Current - Output: 10 mA
Voltage - Output (Max): 15 V
Produkt ist nicht verfügbar
IRU431LCSTR |
Hersteller: Infineon Technologies
Description: IC VREF SHUNT ADJ 1% 8SOIC
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 1.24V
Part Status: Obsolete
Current - Cathode: 80 µA
Current - Output: 10 mA
Voltage - Output (Max): 15 V
Description: IC VREF SHUNT ADJ 1% 8SOIC
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 1.24V
Part Status: Obsolete
Current - Cathode: 80 µA
Current - Output: 10 mA
Voltage - Output (Max): 15 V
Produkt ist nicht verfügbar
IPC60R070CFD7X7SA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH HI POWER WAFER
Description: MOSFET N-CH HI POWER WAFER
Produkt ist nicht verfügbar
IPP040N06NF2SAKMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 52µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V
Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 52µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.09 EUR |
50+ | 1.67 EUR |
100+ | 1.32 EUR |
IFF150B12U1E4BOMA1 |
Hersteller: Infineon Technologies
Description: INTELLIGENT POWER MODULE (IPM)
Description: INTELLIGENT POWER MODULE (IPM)
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 192.99 EUR |