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AUIR3242SBOARDB2BTOBO1 AUIR3242SBOARDB2BTOBO1 Infineon Technologies Infineon-AUIR324_demoboard-UserManual-v02_20-EN.pdf?fileId=5546d46265f064ff016667e5d4133c3f Description: AUIR3242S BOARD B2B
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AUIR3242S
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+246.98 EUR
EVALM3CM615PNTOBO2 Infineon Technologies Description: EVAL BOARD FOR IFCM15P60GD
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+196.38 EUR
BCR119SH6327 Infineon Technologies INFNS11573-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Produkt ist nicht verfügbar
BCR119S Infineon Technologies INFNS17179-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Produkt ist nicht verfügbar
BCR119SH6327XTSA1 BCR119SH6327XTSA1 Infineon Technologies bcr119series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144057767402f3 Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
auf Bestellung 14800 Stücke:
Lieferzeit 10-14 Tag (e)
3796+0.13 EUR
Mindestbestellmenge: 3796
BCR 114T E6327 BCR 114T E6327 Infineon Technologies BCR114%20(2003).pdf Description: TRANS PREBIAS NPN 250MW SC75
Produkt ist nicht verfügbar
BCR 114L3 E6327 BCR 114L3 E6327 Infineon Technologies BCR114%20(2003).pdf Description: TRANS PREBIAS NPN 250MW TSLP-3
Produkt ist nicht verfügbar
BCR 114F E6327 BCR 114F E6327 Infineon Technologies BCR114%20(2003).pdf Description: TRANS PREBIAS NPN 250MW TSFP-3
Produkt ist nicht verfügbar
CY8C20045-24LKXIT CY8C20045-24LKXIT Infineon Technologies Infineon-AN59389_Host_Sourced_Serial_Programming_for_CY8C20xx6A_CY8C20xx6AS_CY8C20xx6L_and_CY8C20xx7_S-ApplicationNotes-v10_00-EN.pdf?fileId=8ac78c8c7cdc391c017d073617e3594d&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC CAPSENSE 8K FLASH 16 QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20045
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BA89502VH6327XTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE GEN PURP SC79-2
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 16350 Stücke:
Lieferzeit 10-14 Tag (e)
5106+0.11 EUR
Mindestbestellmenge: 5106
TLE4929CXHAM18NHAMA1 TLE4929CXHAM18NHAMA1 Infineon Technologies Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929 Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Features: Programmable, Temperature Compensated
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
Produkt ist nicht verfügbar
TLE4929CXHAM18NHAMA1 TLE4929CXHAM18NHAMA1 Infineon Technologies Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929 Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Features: Programmable, Temperature Compensated
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.4 EUR
10+ 7.04 EUR
25+ 6.26 EUR
50+ 5.95 EUR
100+ 5.79 EUR
Mindestbestellmenge: 2
IGI60F1414A1LAUMA1 IGI60F1414A1LAUMA1 Infineon Technologies Infineon-IGI60F1414A1L-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017d9dbde5861bb3 Description: IC HALF BRIDGE DRIVER 28TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 28-PowerTQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Output Configuration: Half Bridge (2)
Rds On (Typ): 140mOhm LS, 140mOhm HS
Applications: General Purpose
Supplier Device Package: PG-TIQFN-28-1
Load Type: Inductive, Resistive
Part Status: Active
Produkt ist nicht verfügbar
IMC302AF064XUMA1 IMC302AF064XUMA1 Infineon Technologies IMC301A_IMC302A_Rev1.0_12-12-19.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 64-QFP (10x10)
Number of I/O: 41
DigiKey Programmable: Not Verified
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.81 EUR
10+ 9.76 EUR
25+ 9.31 EUR
100+ 8.08 EUR
Mindestbestellmenge: 2
IMC301AF064XUMA1 IMC301AF064XUMA1 Infineon Technologies IMC301A_IMC302A_Rev1.0_12-12-19.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.49 EUR
10+ 10.37 EUR
25+ 9.89 EUR
100+ 8.59 EUR
250+ 8.2 EUR
500+ 7.48 EUR
Mindestbestellmenge: 2
SAF-XC886CM-6FFI 5V AC SAF-XC886CM-6FFI 5V AC Infineon Technologies Infineon-XC88XCLM-DS-v01_02-en.pdf?fileId=db3a304412b407950112b40c4a9e0afb Description: IC MCU 8BIT 24KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 24KB (24K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Part Status: Obsolete
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
ISC0603NLSATMA1 ISC0603NLSATMA1 Infineon Technologies Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80 Description: MOSFET N-CH 80V 12.3A/56A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.15 EUR
Mindestbestellmenge: 5000
ISC0603NLSATMA1 ISC0603NLSATMA1 Infineon Technologies Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80 Description: MOSFET N-CH 80V 12.3A/56A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
auf Bestellung 6987 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.85 EUR
10+ 2.55 EUR
100+ 1.99 EUR
500+ 1.64 EUR
1000+ 1.3 EUR
2000+ 1.21 EUR
Mindestbestellmenge: 7
ISC0602NLSATMA1 ISC0602NLSATMA1 Infineon Technologies Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83 Description: MOSFET N-CH 80V 14A/66A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.08 EUR
Mindestbestellmenge: 5000
ISC0602NLSATMA1 ISC0602NLSATMA1 Infineon Technologies Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83 Description: MOSFET N-CH 80V 14A/66A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
auf Bestellung 10816 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.48 EUR
10+ 2.06 EUR
100+ 1.64 EUR
500+ 1.39 EUR
1000+ 1.18 EUR
2000+ 1.12 EUR
Mindestbestellmenge: 8
ISC0805NLSATMA1 ISC0805NLSATMA1 Infineon Technologies Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89 Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.23 EUR
Mindestbestellmenge: 5000
ISC0805NLSATMA1 ISC0805NLSATMA1 Infineon Technologies Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89 Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 6381 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.85 EUR
10+ 2.36 EUR
100+ 1.88 EUR
500+ 1.59 EUR
1000+ 1.35 EUR
2000+ 1.28 EUR
Mindestbestellmenge: 7
ISC0806NLSATMA1 ISC0806NLSATMA1 Infineon Technologies Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86 Description: MOSFET N-CH 100V 16A/97A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Produkt ist nicht verfügbar
ISC0806NLSATMA1 ISC0806NLSATMA1 Infineon Technologies Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86 Description: MOSFET N-CH 100V 16A/97A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
auf Bestellung 4880 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.08 EUR
10+ 3.4 EUR
100+ 2.71 EUR
500+ 2.29 EUR
1000+ 1.94 EUR
2000+ 1.85 EUR
Mindestbestellmenge: 5
DD800S17H4_B2 Infineon Technologies INFN-S-A0001441873-1.pdf?t.download=true&u=5oefqw Description: DDXS17F - RECTIFIER DIODE MODULE
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
1+1410.25 EUR
DD800S17HA_B2 Infineon Technologies INFNS28235-1.pdf?t.download=true&u=ovmfp3 Description: RECTIFIER DIODE MODULE
Packaging: Bulk
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
1+880.32 EUR
AUIRF7648M2TR AUIRF7648M2TR Infineon Technologies INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 14A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
4800+2.58 EUR
Mindestbestellmenge: 4800
AUIRF7648M2TR AUIRF7648M2TR Infineon Technologies INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 14A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
auf Bestellung 9399 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.08 EUR
10+ 4.68 EUR
100+ 3.32 EUR
500+ 2.74 EUR
1000+ 2.58 EUR
Mindestbestellmenge: 3
BAT54-04E6327 BAT54-04E6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
5602+0.082 EUR
Mindestbestellmenge: 5602
BAT54-06E6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 163000 Stücke:
Lieferzeit 10-14 Tag (e)
5170+0.11 EUR
Mindestbestellmenge: 5170
BAT54-05E6327 BAT54-05E6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 41151 Stücke:
Lieferzeit 10-14 Tag (e)
5602+0.088 EUR
Mindestbestellmenge: 5602
T3800N16TOFVTXPSA1 T3800N16TOFVTXPSA1 Infineon Technologies Infineon-T3800N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6e7bc7de7 Description: STD THYR/DIODEN DISC BG-T11126K-
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
TLE4253EXUMA2 TLE4253EXUMA2 Infineon Technologies Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9 Description: IC REG LIN POS ADJ 250MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
auf Bestellung 14399 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.57 EUR
10+ 2.32 EUR
25+ 2.19 EUR
100+ 1.86 EUR
250+ 1.75 EUR
500+ 1.53 EUR
1000+ 1.27 EUR
Mindestbestellmenge: 7
TLE4253GSXUMA4 TLE4253GSXUMA4 Infineon Technologies fundamentals-of-power-semiconductors Description: IC REG LDO ADJ 0.25A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
TLE4253GSXUMA1 TLE4253GSXUMA1 Infineon Technologies Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9 Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
TLE4253GSXUMA1 TLE4253GSXUMA1 Infineon Technologies Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9 Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BCR583E6327HTSA1 BCR583E6327HTSA1 Infineon Technologies bcr583.pdf_folderid=db3a30431428a373011440769fd70304&fileid=db3a30431428a3730114408538a1030f.pdf Description: TRANS PREBIAS
Packaging: Bulk
auf Bestellung 521602 Stücke:
Lieferzeit 10-14 Tag (e)
4418+0.12 EUR
Mindestbestellmenge: 4418
IPLK80R750P7ATMA1 IPLK80R750P7ATMA1 Infineon Technologies Infineon-IPLK80R750P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1e37f02ed Description: MOSFET 800V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
IPLK80R750P7ATMA1 IPLK80R750P7ATMA1 Infineon Technologies Infineon-IPLK80R750P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1e37f02ed Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
IPLK70R750P7ATMA1 IPLK70R750P7ATMA1 Infineon Technologies Infineon-IPLK70R750P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d6301671988874c6b76 Description: MOSFET N-CH 700V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
IPLK70R750P7ATMA1 IPLK70R750P7ATMA1 Infineon Technologies Infineon-IPLK70R750P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d6301671988874c6b76 Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
IPLK80R2K0P7ATMA1 IPLK80R2K0P7ATMA1 Infineon Technologies Infineon-IPLK80R2K0P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e19e8402a3 Description: MOSFET 800V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
IPLK80R2K0P7ATMA1 IPLK80R2K0P7ATMA1 Infineon Technologies Infineon-IPLK80R2K0P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e19e8402a3 Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
IPLK80R900P7ATMA1 IPLK80R900P7ATMA1 Infineon Technologies Infineon-IPLK80R900P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1bd6c02c8 Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
IPLK80R1K2P7ATMA1 IPLK80R1K2P7ATMA1 Infineon Technologies Infineon-IPLK80R1K2P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e14ac50256 Description: MOSFET 800V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
IPLK80R1K2P7ATMA1 IPLK80R1K2P7ATMA1 Infineon Technologies Infineon-IPLK80R1K2P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e14ac50256 Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
IPLK70R1K2P7ATMA1 IPLK70R1K2P7ATMA1 Infineon Technologies Infineon-IPLK70R1K2P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198846766b6a Description: MOSFET N-CH 700V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
IPLK70R1K2P7ATMA1 IPLK70R1K2P7ATMA1 Infineon Technologies Infineon-IPLK70R1K2P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198846766b6a Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
IPLK70R1K4P7ATMA1 IPLK70R1K4P7ATMA1 Infineon Technologies Infineon-IPLK70R1K4P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198857b26b6d Description: MOSFET N-CH 700V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
IPLK70R1K4P7ATMA1 IPLK70R1K4P7ATMA1 Infineon Technologies Infineon-IPLK70R1K4P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198857b26b6d Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
REFXDPL8219U40WTOBO1 REFXDPL8219U40WTOBO1 Infineon Technologies Infineon-Engineering_report_REF-XDPL8219-U40W-ApplicationNotes-v01_01-EN.pdf?fileId=5546d462737c45b901739fceff16729b Description: EVAL KIT
Packaging: Bulk
Voltage - Output: 54V
Current - Output / Channel: 800mA
Utilized IC / Part: XDPL8219
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+185.08 EUR
SIGC14T60SNCX1SA3 Infineon Technologies SIGC14T60SNC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 31ns/261ns
Test Condition: 400V, 15A, 21Ohm, 15V
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Produkt ist nicht verfügbar
BLOCKCHAINSTARTKITTOBO1 BLOCKCHAINSTARTKITTOBO1 Infineon Technologies Infineon-Product-Brief-Blockchain-Security-2Go-starter-kit-PB-v01_00-EN.pdf?fileId=5546d46269e1c019016a0165c27a4161 Description: SECURITY 2 GO
Packaging: Box
Type: Near Field Communication (NFC)
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
1+98.17 EUR
IR35215MTRPBF IR35215MTRPBF Infineon Technologies Infineon-IR35215MTRPBF-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d175c99a8448b Description: IC CONTROLLER MULTIPHASE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+8.66 EUR
Mindestbestellmenge: 3000
IR35215MTRPBF IR35215MTRPBF Infineon Technologies Infineon-IR35215MTRPBF-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d175c99a8448b Description: IC CONTROLLER MULTIPHASE 40QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Active
auf Bestellung 5502 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.53 EUR
10+ 12.23 EUR
25+ 11.66 EUR
100+ 10.13 EUR
250+ 9.67 EUR
500+ 8.82 EUR
1000+ 8.66 EUR
Mindestbestellmenge: 2
CY7C1370KV33-200AXC CY7C1370KV33-200AXC Infineon Technologies Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.42 EUR
Mindestbestellmenge: 2
IPA075N15N3 IPA075N15N3 Infineon Technologies INFNS15789-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 43A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 75 V
auf Bestellung 527 Stücke:
Lieferzeit 10-14 Tag (e)
70+6.94 EUR
Mindestbestellmenge: 70
IPA075N15N3G IPA075N15N3G Infineon Technologies INFNS15789-1.pdf?t.download=true&u=5oefqw Description: IPA075N15 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
IRFHM8363TRPBF IRFHM8363TRPBF Infineon Technologies irfhm8363pbf.pdf?fileId=5546d462533600a40153562378cd1f57 Description: MOSFET 2N-CH 30V 11A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Not For New Designs
Produkt ist nicht verfügbar
IPI075N15N3G IPI075N15N3G Infineon Technologies INFNS16325-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
AUIR3242SBOARDB2BTOBO1 Infineon-AUIR324_demoboard-UserManual-v02_20-EN.pdf?fileId=5546d46265f064ff016667e5d4133c3f
AUIR3242SBOARDB2BTOBO1
Hersteller: Infineon Technologies
Description: AUIR3242S BOARD B2B
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AUIR3242S
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+246.98 EUR
EVALM3CM615PNTOBO2
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IFCM15P60GD
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+196.38 EUR
BCR119SH6327 INFNS11573-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Produkt ist nicht verfügbar
BCR119S INFNS17179-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Produkt ist nicht verfügbar
BCR119SH6327XTSA1 bcr119series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144057767402f3
BCR119SH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
auf Bestellung 14800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3796+0.13 EUR
Mindestbestellmenge: 3796
BCR 114T E6327 BCR114%20(2003).pdf
BCR 114T E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW SC75
Produkt ist nicht verfügbar
BCR 114L3 E6327 BCR114%20(2003).pdf
BCR 114L3 E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSLP-3
Produkt ist nicht verfügbar
BCR 114F E6327 BCR114%20(2003).pdf
BCR 114F E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSFP-3
Produkt ist nicht verfügbar
CY8C20045-24LKXIT Infineon-AN59389_Host_Sourced_Serial_Programming_for_CY8C20xx6A_CY8C20xx6AS_CY8C20xx6L_and_CY8C20xx7_S-ApplicationNotes-v10_00-EN.pdf?fileId=8ac78c8c7cdc391c017d073617e3594d&utm_source=cypress&utm_medium=referral&utm_campaign
CY8C20045-24LKXIT
Hersteller: Infineon Technologies
Description: IC CAPSENSE 8K FLASH 16 QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20045
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
BA89502VH6327XTSA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP SC79-2
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 16350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5106+0.11 EUR
Mindestbestellmenge: 5106
TLE4929CXHAM18NHAMA1 Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929
TLE4929CXHAM18NHAMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Features: Programmable, Temperature Compensated
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
Produkt ist nicht verfügbar
TLE4929CXHAM18NHAMA1 Infineon-TLE4929C-XHA-DataSheet-v01_00-EN.pdf?fileId=5546d4627617cd8301761ef5ffa00929
TLE4929CXHAM18NHAMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Features: Programmable, Temperature Compensated
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.4 EUR
10+ 7.04 EUR
25+ 6.26 EUR
50+ 5.95 EUR
100+ 5.79 EUR
Mindestbestellmenge: 2
IGI60F1414A1LAUMA1 Infineon-IGI60F1414A1L-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7d718a49017d9dbde5861bb3
IGI60F1414A1LAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 28TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 28-PowerTQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Output Configuration: Half Bridge (2)
Rds On (Typ): 140mOhm LS, 140mOhm HS
Applications: General Purpose
Supplier Device Package: PG-TIQFN-28-1
Load Type: Inductive, Resistive
Part Status: Active
Produkt ist nicht verfügbar
IMC302AF064XUMA1 IMC301A_IMC302A_Rev1.0_12-12-19.pdf
IMC302AF064XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 64-QFP (10x10)
Number of I/O: 41
DigiKey Programmable: Not Verified
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.81 EUR
10+ 9.76 EUR
25+ 9.31 EUR
100+ 8.08 EUR
Mindestbestellmenge: 2
IMC301AF064XUMA1 IMC301A_IMC302A_Rev1.0_12-12-19.pdf
IMC301AF064XUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 7x12b, D/A 7x1b Sigma-Delta
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
Supplier Device Package: 64-QFP (10x10)
Part Status: Active
Number of I/O: 41
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.49 EUR
10+ 10.37 EUR
25+ 9.89 EUR
100+ 8.59 EUR
250+ 8.2 EUR
500+ 7.48 EUR
Mindestbestellmenge: 2
SAF-XC886CM-6FFI 5V AC Infineon-XC88XCLM-DS-v01_02-en.pdf?fileId=db3a304412b407950112b40c4a9e0afb
SAF-XC886CM-6FFI 5V AC
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 24KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 24KB (24K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Part Status: Obsolete
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
ISC0603NLSATMA1 Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80
ISC0603NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.15 EUR
Mindestbestellmenge: 5000
ISC0603NLSATMA1 Infineon-ISC0603NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd473cc46d80
ISC0603NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 12.3A/56A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.3A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 24µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
auf Bestellung 6987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.85 EUR
10+ 2.55 EUR
100+ 1.99 EUR
500+ 1.64 EUR
1000+ 1.3 EUR
2000+ 1.21 EUR
Mindestbestellmenge: 7
ISC0602NLSATMA1 Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83
ISC0602NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.08 EUR
Mindestbestellmenge: 5000
ISC0602NLSATMA1 Infineon-ISC0602NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd47487e6d83
ISC0602NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 14A/66A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 29µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
auf Bestellung 10816 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.48 EUR
10+ 2.06 EUR
100+ 1.64 EUR
500+ 1.39 EUR
1000+ 1.18 EUR
2000+ 1.12 EUR
Mindestbestellmenge: 8
ISC0805NLSATMA1 Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89
ISC0805NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.23 EUR
Mindestbestellmenge: 5000
ISC0805NLSATMA1 Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89
ISC0805NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13A/71A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 40µA
Supplier Device Package: PG-TDSON-8-46
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
auf Bestellung 6381 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.85 EUR
10+ 2.36 EUR
100+ 1.88 EUR
500+ 1.59 EUR
1000+ 1.35 EUR
2000+ 1.28 EUR
Mindestbestellmenge: 7
ISC0806NLSATMA1 Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86
ISC0806NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A/97A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
Produkt ist nicht verfügbar
ISC0806NLSATMA1 Infineon-ISC0806NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd506b9f6d86
ISC0806NLSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A/97A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 61µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
auf Bestellung 4880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.08 EUR
10+ 3.4 EUR
100+ 2.71 EUR
500+ 2.29 EUR
1000+ 1.94 EUR
2000+ 1.85 EUR
Mindestbestellmenge: 5
DD800S17H4_B2 INFN-S-A0001441873-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DDXS17F - RECTIFIER DIODE MODULE
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+1410.25 EUR
DD800S17HA_B2 INFNS28235-1.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE MODULE
Packaging: Bulk
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+880.32 EUR
AUIRF7648M2TR INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw
AUIRF7648M2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4800+2.58 EUR
Mindestbestellmenge: 4800
AUIRF7648M2TR INFN-S-A0002298906-1.pdf?t.download=true&u=5oefqw
AUIRF7648M2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 14A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric M4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 41A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DirectFET™ Isometric M4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
auf Bestellung 9399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.08 EUR
10+ 4.68 EUR
100+ 3.32 EUR
500+ 2.74 EUR
1000+ 2.58 EUR
Mindestbestellmenge: 3
BAT54-04E6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT54-04E6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5602+0.082 EUR
Mindestbestellmenge: 5602
BAT54-06E6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 163000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5170+0.11 EUR
Mindestbestellmenge: 5170
BAT54-05E6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT54-05E6327
Hersteller: Infineon Technologies
Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 41151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5602+0.088 EUR
Mindestbestellmenge: 5602
T3800N16TOFVTXPSA1 Infineon-T3800N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6e7bc7de7
T3800N16TOFVTXPSA1
Hersteller: Infineon Technologies
Description: STD THYR/DIODEN DISC BG-T11126K-
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
TLE4253EXUMA2 Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9
TLE4253EXUMA2
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 250MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
auf Bestellung 14399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.57 EUR
10+ 2.32 EUR
25+ 2.19 EUR
100+ 1.86 EUR
250+ 1.75 EUR
500+ 1.53 EUR
1000+ 1.27 EUR
Mindestbestellmenge: 7
TLE4253GSXUMA4 fundamentals-of-power-semiconductors
TLE4253GSXUMA4
Hersteller: Infineon Technologies
Description: IC REG LDO ADJ 0.25A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
TLE4253GSXUMA1 Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9
TLE4253GSXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
TLE4253GSXUMA1 Infineon-TLE4253-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf015a13293e8c0da9
TLE4253GSXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 250MA DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BCR583E6327HTSA1 bcr583.pdf_folderid=db3a30431428a373011440769fd70304&fileid=db3a30431428a3730114408538a1030f.pdf
BCR583E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS
Packaging: Bulk
auf Bestellung 521602 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4418+0.12 EUR
Mindestbestellmenge: 4418
IPLK80R750P7ATMA1 Infineon-IPLK80R750P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1e37f02ed
IPLK80R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
IPLK80R750P7ATMA1 Infineon-IPLK80R750P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1e37f02ed
IPLK80R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
IPLK70R750P7ATMA1 Infineon-IPLK70R750P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d6301671988874c6b76
IPLK70R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
IPLK70R750P7ATMA1 Infineon-IPLK70R750P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d6301671988874c6b76
IPLK70R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
IPLK80R2K0P7ATMA1 Infineon-IPLK80R2K0P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e19e8402a3
IPLK80R2K0P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
IPLK80R2K0P7ATMA1 Infineon-IPLK80R2K0P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e19e8402a3
IPLK80R2K0P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
IPLK80R900P7ATMA1 Infineon-IPLK80R900P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e1bd6c02c8
IPLK80R900P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
IPLK80R1K2P7ATMA1 Infineon-IPLK80R1K2P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e14ac50256
IPLK80R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
IPLK80R1K2P7ATMA1 Infineon-IPLK80R1K2P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e14ac50256
IPLK80R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
IPLK70R1K2P7ATMA1 Infineon-IPLK70R1K2P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198846766b6a
IPLK70R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
IPLK70R1K2P7ATMA1 Infineon-IPLK70R1K2P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198846766b6a
IPLK70R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
IPLK70R1K4P7ATMA1 Infineon-IPLK70R1K4P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198857b26b6d
IPLK70R1K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
IPLK70R1K4P7ATMA1 Infineon-IPLK70R1K4P7-PQR-v01_00-EN.pdf?fileId=5546d46266f85d630167198857b26b6d
IPLK70R1K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Produkt ist nicht verfügbar
REFXDPL8219U40WTOBO1 Infineon-Engineering_report_REF-XDPL8219-U40W-ApplicationNotes-v01_01-EN.pdf?fileId=5546d462737c45b901739fceff16729b
REFXDPL8219U40WTOBO1
Hersteller: Infineon Technologies
Description: EVAL KIT
Packaging: Bulk
Voltage - Output: 54V
Current - Output / Channel: 800mA
Utilized IC / Part: XDPL8219
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+185.08 EUR
SIGC14T60SNCX1SA3 SIGC14T60SNC_ed2_11-28-03.pdf
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 31ns/261ns
Test Condition: 400V, 15A, 21Ohm, 15V
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Produkt ist nicht verfügbar
BLOCKCHAINSTARTKITTOBO1 Infineon-Product-Brief-Blockchain-Security-2Go-starter-kit-PB-v01_00-EN.pdf?fileId=5546d46269e1c019016a0165c27a4161
BLOCKCHAINSTARTKITTOBO1
Hersteller: Infineon Technologies
Description: SECURITY 2 GO
Packaging: Box
Type: Near Field Communication (NFC)
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+98.17 EUR
IR35215MTRPBF Infineon-IR35215MTRPBF-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d175c99a8448b
IR35215MTRPBF
Hersteller: Infineon Technologies
Description: IC CONTROLLER MULTIPHASE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+8.66 EUR
Mindestbestellmenge: 3000
IR35215MTRPBF Infineon-IR35215MTRPBF-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d175c99a8448b
IR35215MTRPBF
Hersteller: Infineon Technologies
Description: IC CONTROLLER MULTIPHASE 40QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Active
auf Bestellung 5502 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.53 EUR
10+ 12.23 EUR
25+ 11.66 EUR
100+ 10.13 EUR
250+ 9.67 EUR
500+ 8.82 EUR
1000+ 8.66 EUR
Mindestbestellmenge: 2
CY7C1370KV33-200AXC Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
CY7C1370KV33-200AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.42 EUR
Mindestbestellmenge: 2
IPA075N15N3 INFNS15789-1.pdf?t.download=true&u=5oefqw
IPA075N15N3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 43A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7280 pF @ 75 V
auf Bestellung 527 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
70+6.94 EUR
Mindestbestellmenge: 70
IPA075N15N3G INFNS15789-1.pdf?t.download=true&u=5oefqw
IPA075N15N3G
Hersteller: Infineon Technologies
Description: IPA075N15 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
IRFHM8363TRPBF irfhm8363pbf.pdf?fileId=5546d462533600a40153562378cd1f57
IRFHM8363TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 11A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Not For New Designs
Produkt ist nicht verfügbar
IPI075N15N3G INFNS16325-1.pdf?t.download=true&u=5oefqw
IPI075N15N3G
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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