IRFHM8363TRPBF Infineon Technologies
auf Bestellung 3375 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 0.68 EUR |
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Technische Details IRFHM8363TRPBF Infineon Technologies
Description: MOSFET 2N-CH 30V 11A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.7W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 11A, Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V, Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Part Status: Not For New Designs.
Weitere Produktangebote IRFHM8363TRPBF nach Preis ab 0.5 EUR bis 0.94 EUR
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IRFHM8363TRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R |
auf Bestellung 1865 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFHM8363TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R |
auf Bestellung 1865 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFHM8363TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFHM8363TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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IRFHM8363TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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IRFHM8363TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 30V 11A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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IRFHM8363TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 30V 11A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Part Status: Not For New Designs |
Produkt ist nicht verfügbar |