Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (138835) > Seite 2290 nach 2314
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IPZA60R037P7XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-4 Case: PG-TO247-4 Mounting: THT Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 121nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 48A On-state resistance: 37mΩ Type of transistor: N-MOSFET Power dissipation: 255W Polarisation: unipolar |
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IPZA60R060P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 164W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 60mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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IPZA60R080P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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IPZA60R099P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 117W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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IPZA60R180P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 72W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
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IAUT300N10S5N015ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8 Case: PG-HSOF-8 Mounting: SMD On-state resistance: 1.5mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: reel; tape Gate charge: 68nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 300A |
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| FS15R12VT3BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Power dissipation: 86W Electrical mounting: Press-in PCB Type of module: IGBT Technology: EasyPACK™ Topology: IGBT three-phase bridge Case: AG-EASY750-1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 15A Pulsed collector current: 30A |
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IRF6674TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 67A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 67A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPP60R099C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 110W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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AUIPS7091GTR | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 8A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.12Ω Kind of package: reel Technology: Classic PROFET Operating temperature: -40...150°C Power dissipation: 1.25W Application: automotive industry |
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| AUIPS7111STRL | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; D2PAK-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 10A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: D2PAK-5 On-state resistance: 7.5mΩ Kind of package: reel Technology: Classic PROFET Operating temperature: -40...150°C Power dissipation: 2.5W Application: automotive industry |
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AUIPS71451GTR | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.1Ω Kind of package: reel Technology: Classic PROFET Operating temperature: -40...150°C Power dissipation: 1.25W Application: automotive industry |
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| ETD580N16P60HPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 586A; BG-PB60ECO-1; Ufmax: 1.43V Load current: 586A Semiconductor structure: double series Gate current: 250mA Max. forward impulse current: 16.5kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: diode-thyristor Case: BG-PB60ECO-1 Max. off-state voltage: 1.6kV Max. load current: 700A Max. forward voltage: 1.43V |
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| ETT580N16P60HPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 586A; BG-PB60ECO-1; screw Load current: 586A Semiconductor structure: double series Gate current: 250mA Max. forward impulse current: 16.5kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor Case: BG-PB60ECO-1 Max. off-state voltage: 1.6kV Max. forward voltage: 1.43V |
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BSS192PH6327FTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -250V Drain current: -190mA Power dissipation: 1W Case: PG-SOT89 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 1526 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF7379QTR | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 5.8/-4.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 38/70mΩ Mounting: SMD Gate charge: 16.7nC Kind of channel: enhanced |
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BSD235CH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W Type of transistor: N/P-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.95/-0.53A Power dissipation: 0.5W Case: PG-SOT-363 Gate-source voltage: ±12V On-state resistance: 0.415/1.221Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSL215CH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1.5/-1.5A; 0.5W Type of transistor: N/P-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 1.5/-1.5A Power dissipation: 0.5W Case: PG-TSOP-6 Gate-source voltage: ±12V On-state resistance: 0.173/0.25Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 2391 Stücke: Lieferzeit 14-21 Tag (e) |
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BSL308CH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.3/-2A; 0.5W Type of transistor: N/P-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 2.3/-2A Power dissipation: 0.5W Case: PG-TSOP-6 Gate-source voltage: ±20V On-state resistance: 67/88mΩ Mounting: SMD Kind of channel: enhanced |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSL316CH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W Type of transistor: N/P-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 1.4/-1.5A Power dissipation: 0.5W Case: PG-TSOP-6 Gate-source voltage: ±20V On-state resistance: 0.191/0.177Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 1095 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ15DC02KDHXTMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.1/-3.2A; 2.5W Type of transistor: N/P-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 5.1/-3.2A Power dissipation: 2.5W Case: PG-TSDSON-8 Gate-source voltage: ±12V On-state resistance: 63/164mΩ Mounting: SMD Kind of channel: enhanced |
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| IRSM505-035PA | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,thermistor; iMOTION™; SOP23 Type of integrated circuit: driver Case: SOP23 Mounting: SMD Operating temperature: -40...150°C Kind of integrated circuit: 3-phase motor controller; IPM Operating voltage: 13.5...16.5/8.9...400V On-state resistance: 2.2Ω Topology: IGBT three-phase bridge; thermistor Output current: 2.1A Power dissipation: 18W Technology: iMOTION™ Voltage class: 500V |
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ISO1H812GAUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC Type of integrated circuit: driver Output current: 0.625A Case: PG-DSO-36 Mounting: SMD Kind of package: reel; tape Operating temperature: -25...125°C Number of channels: 8 Integrated circuit features: 8bit interface; galvanically isolated Power dissipation: 3.3W Technology: ISOFACE™ Kind of integrated circuit: high-side Supply voltage: 11...35V DC On-state resistance: 0.15Ω Turn-on time: 64µs Turn-off time: 89µs Kind of output: N-Channel |
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XC886C6FFI3V3ACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: CAN x2; SPI; UART x2 Supply voltage: 3...5V DC Case: PG-TQFP-48 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 24kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
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XC888CM8FFA3V3ACKXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI x3,UART x3; 3.3VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI x3; UART x3 Supply voltage: 3.3V DC Case: PG-LQFP-64 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 32kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 |
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IPA030N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 79A; 41W; TO220FP Mounting: THT Type of transistor: N-MOSFET Case: TO220FP Power dissipation: 41W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 79A On-state resistance: 3mΩ |
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IRF7465TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 1.9A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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BSS209PWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.63A Power dissipation: 0.3W Case: PG-SOT-323 Gate-source voltage: ±12V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 2740 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP171PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.9A Power dissipation: 1.8W Case: PG-SOT223 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 1010 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP320SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.9A; 1.8W; SOT223 Mounting: SMD Drain current: 2.9A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Case: SOT223 On-state resistance: 0.12Ω Gate-source voltage: ±20V Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ |
auf Bestellung 629 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7601TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; 1.8W; SO8 Mounting: SMD Case: SO8 Kind of package: reel Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Drain current: 5.7A Drain-source voltage: 20V Technology: HEXFET® Kind of channel: enhanced |
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| BCR401RE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SOT143R Output current: 60mA Number of channels: 1 Mounting: SMD Operating voltage: 1.2...18V |
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IRFB7440PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 208A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Trade name: StrongIRFET |
auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) |
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XMC1302Q024X0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-24 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 22 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 8 Kind of architecture: Cortex M0 Family: XMC1300 |
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| XMC1302Q040X0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-40 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 34 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1300 |
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XMC1302T038X0064ABXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-TSSOP-38 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 34 Number of 16bit timers: 8 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: GPIO; USIC x2 Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1300 |
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BSM200GB60DLC | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 0.6kV Collector current: 200A Case: AG-34MM-1 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Power dissipation: 730W Mechanical mounting: screw |
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| DDB6U50N16W1RBPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; three-phase diode bridge Max. off-state voltage: 1.6kV Collector current: 50A Case: AG-EASY1B Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: TRENCHSTOP™ Mechanical mounting: screw |
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| DDB6U75N16W1RBOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 335W Case: AG-EASY1B Power dissipation: 335W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A |
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| IPD60R210PFD7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A Mounting: SMD Power dissipation: 64W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 386mΩ Drain current: 10A Drain-source voltage: 600V Case: TO252 Technology: CoolMOS™ PFD7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 42A |
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IPAN60R210PFD7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 10A; Idm: 42A Type of transistor: N-MOSFET Technology: CoolMOS™ PFD7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 42A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 386mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IRF7476TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 15A; 2.5W; SO8 Kind of package: reel Drain-source voltage: 12V Drain current: 15A Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: SO8 |
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IRF7811AVTRPBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 14A; 3.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Power dissipation: 3.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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| IPG20N04S4L11ATMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A Type of transistor: N-MOSFET x2 Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Pulsed drain current: 80A Power dissipation: 41W Case: PG-TDSON-8-4 Gate-source voltage: ±16V On-state resistance: 11.6mΩ Mounting: SMD Kind of channel: enhanced |
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| IPD30N08S2L21ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 75V; 30A; Idm: 120A; 136W Type of transistor: N-MOSFET Technology: OptiMOS® Polarisation: unipolar Drain-source voltage: 75V Drain current: 30A Pulsed drain current: 120A Power dissipation: 136W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 20.5mΩ Mounting: SMD Kind of channel: enhanced |
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| IAUA210N10S5N024AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 674A; 238W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 26A Pulsed drain current: 674A Power dissipation: 238W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 119nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DZ600N12K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA Type of module: diode Semiconductor structure: single diode Max. off-state voltage: 1.2kV Load current: 600A Case: BG-PB501-1 Max. forward voltage: 0.75V Max. forward impulse current: 22kA Electrical mounting: screw Mechanical mounting: screw |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR4104TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK Kind of package: reel Drain-source voltage: 40V Drain current: 119A Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: DPAK |
auf Bestellung 1530 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SC79; 250mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: single diode Case: SC79 Max. forward impulse current: 0.8A Power dissipation: 0.25W |
auf Bestellung 7210 Stücke: Lieferzeit 14-21 Tag (e) |
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TLE4906KHTSA1 | INFINEON TECHNOLOGIES |
Category: Hall Sensors Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT Type of sensor: Hall Kind of sensor: unipolar Case: SC59 Range of detectable magnetic field: 5...13.5mT Supply voltage: 2.7...18V DC Mounting: SMT Operating temperature: -40...150°C |
auf Bestellung 1215 Stücke: Lieferzeit 14-21 Tag (e) |
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| TLE4913HTSA1 | INFINEON TECHNOLOGIES |
Category: Hall Sensors Description: Sensor: Hall; omnipolar; SC59; -5÷5mT; Usup: 2.4÷5.5VDC; SMT Type of sensor: Hall Kind of sensor: omnipolar Case: SC59 Range of detectable magnetic field: -5...5mT Supply voltage: 2.4...5.5V DC Mounting: SMT Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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TLE4935L | INFINEON TECHNOLOGIES |
Category: Hall Sensors Description: Sensor: Hall; latch; P-SSO-3-2; -20÷20mT; Usup: 3.8÷24VDC; THT Type of sensor: Hall Kind of sensor: latch Case: P-SSO-3-2 Range of detectable magnetic field: -20...20mT Supply voltage: 3.8...24V DC Mounting: THT Operating temperature: -40...150°C |
auf Bestellung 469 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS816NWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.4A Power dissipation: 0.5W Case: SOT323 Gate-source voltage: ±8V On-state resistance: 0.24Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 4094 Stücke: Lieferzeit 14-21 Tag (e) |
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ND104N12K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 1.2kV; If: 104A; BG-PB20-1; Ufmax: 1.4V Max. forward impulse current: 2.9kA Max. forward voltage: 1.4V Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: screw Load current: 104A Type of module: diode Semiconductor structure: single diode Case: BG-PB20-1 |
Produkt ist nicht verfügbar |
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IRS4426SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW Power: 625mW Number of channels: 2 Output current: -3.3...2.3A Turn-on time: 50ns Turn-off time: 50ns Type of integrated circuit: driver Kind of package: tube Kind of integrated circuit: gate driver; low-side Topology: MOSFET half-bridge Mounting: SMD Operating temperature: -40...125°C Case: SO8 Supply voltage: 6...20V DC |
Produkt ist nicht verfügbar |
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BAT1704WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 4V; 0.13A; SOT323; 150mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 4V Load current: 0.13A Semiconductor structure: double series Case: SOT323 Power dissipation: 0.15W |
auf Bestellung 407 Stücke: Lieferzeit 14-21 Tag (e) |
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BFP405H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343 Frequency: 25GHz Collector-emitter voltage: 4.5V Current gain: 90...130 Collector current: 25mA Type of transistor: NPN Power dissipation: 75mW Polarisation: bipolar Kind of package: reel; tape Technology: SIEGET™ Kind of transistor: RF Mounting: SMD Case: SOT343 |
Produkt ist nicht verfügbar |
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IRFS4227TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 62A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFS4229TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 45A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFS4321TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 83A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
auf Bestellung 411 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPZA60R037P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 121nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 48A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 255W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-4
Case: PG-TO247-4
Mounting: THT
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 121nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 48A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 255W
Polarisation: unipolar
Produkt ist nicht verfügbar
| IPZA60R060P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
| IPZA60R080P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
| IPZA60R099P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
| IPZA60R180P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
| IAUT300N10S5N015ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 300A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Case: PG-HSOF-8
Mounting: SMD
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 300A
Produkt ist nicht verfügbar
| FS15R12VT3BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 86W
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Case: AG-EASY750-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 30A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Power dissipation: 86W
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Case: AG-EASY750-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 15A
Pulsed collector current: 30A
Produkt ist nicht verfügbar
| IRF6674TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 67A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 67A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 67A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 67A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP60R099C7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| AUIPS7091GTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Produkt ist nicht verfügbar
| AUIPS7111STRL |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; D2PAK-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK-5
On-state resistance: 7.5mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; D2PAK-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK-5
On-state resistance: 7.5mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
Produkt ist nicht verfügbar
| AUIPS71451GTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.1Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.1Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Produkt ist nicht verfügbar
| ETD580N16P60HPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 586A; BG-PB60ECO-1; Ufmax: 1.43V
Load current: 586A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB60ECO-1
Max. off-state voltage: 1.6kV
Max. load current: 700A
Max. forward voltage: 1.43V
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 586A; BG-PB60ECO-1; Ufmax: 1.43V
Load current: 586A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB60ECO-1
Max. off-state voltage: 1.6kV
Max. load current: 700A
Max. forward voltage: 1.43V
Produkt ist nicht verfügbar
| ETT580N16P60HPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 586A; BG-PB60ECO-1; screw
Load current: 586A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB60ECO-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.43V
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 586A; BG-PB60ECO-1; screw
Load current: 586A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 16.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB60ECO-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.43V
Produkt ist nicht verfügbar
| BSS192PH6327FTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 1526 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 169+ | 0.42 EUR |
| 203+ | 0.35 EUR |
| 300+ | 0.24 EUR |
| 317+ | 0.23 EUR |
| AUIRF7379QTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38/70mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38/70mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSD235CH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.95/-0.53A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.415/1.221Ω
Mounting: SMD
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.95/-0.53A
Power dissipation: 0.5W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 0.415/1.221Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 295+ | 0.24 EUR |
| 338+ | 0.21 EUR |
| 428+ | 0.17 EUR |
| 477+ | 0.15 EUR |
| 747+ | 0.096 EUR |
| 782+ | 0.092 EUR |
| BSL215CH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1.5/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.5/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 0.173/0.25Ω
Mounting: SMD
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1.5/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.5/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 0.173/0.25Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 2391 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 122+ | 0.59 EUR |
| 154+ | 0.46 EUR |
| 201+ | 0.36 EUR |
| 213+ | 0.34 EUR |
| 1000+ | 0.33 EUR |
| BSL308CH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.3/-2A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.3/-2A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 67/88mΩ
Mounting: SMD
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.3/-2A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.3/-2A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 67/88mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 0.49 EUR |
| 202+ | 0.35 EUR |
| 277+ | 0.26 EUR |
| 291+ | 0.25 EUR |
| 500+ | 0.24 EUR |
| BSL316CH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 1.4/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 0.191/0.177Ω
Mounting: SMD
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 1.4/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 0.191/0.177Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 1095 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 177+ | 0.4 EUR |
| 269+ | 0.27 EUR |
| 353+ | 0.2 EUR |
| 374+ | 0.19 EUR |
| BSZ15DC02KDHXTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.1/-3.2A; 2.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 5.1/-3.2A
Power dissipation: 2.5W
Case: PG-TSDSON-8
Gate-source voltage: ±12V
On-state resistance: 63/164mΩ
Mounting: SMD
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.1/-3.2A; 2.5W
Type of transistor: N/P-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 5.1/-3.2A
Power dissipation: 2.5W
Case: PG-TSDSON-8
Gate-source voltage: ±12V
On-state resistance: 63/164mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRSM505-035PA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; iMOTION™; SOP23
Type of integrated circuit: driver
Case: SOP23
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: 3-phase motor controller; IPM
Operating voltage: 13.5...16.5/8.9...400V
On-state resistance: 2.2Ω
Topology: IGBT three-phase bridge; thermistor
Output current: 2.1A
Power dissipation: 18W
Technology: iMOTION™
Voltage class: 500V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; iMOTION™; SOP23
Type of integrated circuit: driver
Case: SOP23
Mounting: SMD
Operating temperature: -40...150°C
Kind of integrated circuit: 3-phase motor controller; IPM
Operating voltage: 13.5...16.5/8.9...400V
On-state resistance: 2.2Ω
Topology: IGBT three-phase bridge; thermistor
Output current: 2.1A
Power dissipation: 18W
Technology: iMOTION™
Voltage class: 500V
Produkt ist nicht verfügbar
| ISO1H812GAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC
Type of integrated circuit: driver
Output current: 0.625A
Case: PG-DSO-36
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -25...125°C
Number of channels: 8
Integrated circuit features: 8bit interface; galvanically isolated
Power dissipation: 3.3W
Technology: ISOFACE™
Kind of integrated circuit: high-side
Supply voltage: 11...35V DC
On-state resistance: 0.15Ω
Turn-on time: 64µs
Turn-off time: 89µs
Kind of output: N-Channel
Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC
Type of integrated circuit: driver
Output current: 0.625A
Case: PG-DSO-36
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -25...125°C
Number of channels: 8
Integrated circuit features: 8bit interface; galvanically isolated
Power dissipation: 3.3W
Technology: ISOFACE™
Kind of integrated circuit: high-side
Supply voltage: 11...35V DC
On-state resistance: 0.15Ω
Turn-on time: 64µs
Turn-off time: 89µs
Kind of output: N-Channel
Produkt ist nicht verfügbar
| XC886C6FFI3V3ACFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
| XC888CM8FFA3V3ACKXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI x3,UART x3; 3.3VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI x3; UART x3
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI x3,UART x3; 3.3VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI x3; UART x3
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
| IPA030N10N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 79A
On-state resistance: 3mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Power dissipation: 41W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 79A
On-state resistance: 3mΩ
Produkt ist nicht verfügbar
| IRF7465TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSS209PWH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.63A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.63A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±12V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 2740 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 162+ | 0.44 EUR |
| 241+ | 0.3 EUR |
| 447+ | 0.16 EUR |
| 532+ | 0.13 EUR |
| 910+ | 0.079 EUR |
| 962+ | 0.074 EUR |
| BSP171PH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Power dissipation: 1.8W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 1010 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 79+ | 0.92 EUR |
| 185+ | 0.39 EUR |
| 196+ | 0.37 EUR |
| BSP320SH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.9A; 1.8W; SOT223
Mounting: SMD
Drain current: 2.9A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Case: SOT223
On-state resistance: 0.12Ω
Gate-source voltage: ±20V
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.9A; 1.8W; SOT223
Mounting: SMD
Drain current: 2.9A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Case: SOT223
On-state resistance: 0.12Ω
Gate-source voltage: ±20V
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
auf Bestellung 629 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 106+ | 0.68 EUR |
| 120+ | 0.6 EUR |
| 146+ | 0.49 EUR |
| 154+ | 0.46 EUR |
| IRF7601TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; 1.8W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 5.7A
Drain-source voltage: 20V
Technology: HEXFET®
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; 1.8W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 5.7A
Drain-source voltage: 20V
Technology: HEXFET®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BCR401RE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 60mA
Number of channels: 1
Mounting: SMD
Operating voltage: 1.2...18V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SOT143R
Output current: 60mA
Number of channels: 1
Mounting: SMD
Operating voltage: 1.2...18V
Produkt ist nicht verfügbar
| IRFB7440PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Trade name: StrongIRFET
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.82 EUR |
| 63+ | 1.14 EUR |
| 76+ | 0.94 EUR |
| 81+ | 0.89 EUR |
| XMC1302Q024X0064ABXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-24; 16kBSRAM,64kBFLASH; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-24
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 22
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 8
Kind of architecture: Cortex M0
Family: XMC1300
Produkt ist nicht verfügbar
| XMC1302Q040X0064ABXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-40; 16kBSRAM,64kBFLASH; XMC1300
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-40
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Produkt ist nicht verfügbar
| XMC1302T038X0064ABXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-TSSOP-38; 16kBSRAM,64kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-TSSOP-38
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 34
Number of 16bit timers: 8
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: GPIO; USIC x2
Integrated circuit features: ACMP x3; BCCU; EEPROM emulation (DataFlash); internal temperature sensor; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1300
Produkt ist nicht verfügbar
| BSM200GB60DLC |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: AG-34MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 730W
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 0.6kV
Collector current: 200A
Case: AG-34MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 730W
Mechanical mounting: screw
Produkt ist nicht verfügbar
| DDB6U50N16W1RBPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; three-phase diode bridge
Max. off-state voltage: 1.6kV
Collector current: 50A
Case: AG-EASY1B
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: TRENCHSTOP™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; three-phase diode bridge
Max. off-state voltage: 1.6kV
Collector current: 50A
Case: AG-EASY1B
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: TRENCHSTOP™
Mechanical mounting: screw
Produkt ist nicht verfügbar
| DDB6U75N16W1RBOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 335W
Case: AG-EASY1B
Power dissipation: 335W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 335W
Case: AG-EASY1B
Power dissipation: 335W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Produkt ist nicht verfügbar
| IPD60R210PFD7SAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A
Mounting: SMD
Power dissipation: 64W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 386mΩ
Drain current: 10A
Drain-source voltage: 600V
Case: TO252
Technology: CoolMOS™ PFD7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 42A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A
Mounting: SMD
Power dissipation: 64W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 386mΩ
Drain current: 10A
Drain-source voltage: 600V
Case: TO252
Technology: CoolMOS™ PFD7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 42A
Produkt ist nicht verfügbar
| IPAN60R210PFD7SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 10A; Idm: 42A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 42A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 386mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 10A; Idm: 42A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 42A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 386mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF7476TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 15A; 2.5W; SO8
Kind of package: reel
Drain-source voltage: 12V
Drain current: 15A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 15A; 2.5W; SO8
Kind of package: reel
Drain-source voltage: 12V
Drain current: 15A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
| IRF7811AVTRPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 3.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 3.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 3.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 3.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPG20N04S4L11ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 41W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 41W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPD30N08S2L21ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 75V; 30A; Idm: 120A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 136W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 75V; 30A; Idm: 120A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 136W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IAUA210N10S5N024AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 674A; 238W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 674A
Power dissipation: 238W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 119nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 26A; Idm: 674A; 238W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 26A
Pulsed drain current: 674A
Power dissipation: 238W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 119nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DZ600N12K |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 311.33 EUR |
| IRFR4104TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Kind of package: reel
Drain-source voltage: 40V
Drain current: 119A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DPAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Kind of package: reel
Drain-source voltage: 40V
Drain current: 119A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: DPAK
auf Bestellung 1530 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 48+ | 1.5 EUR |
| 57+ | 1.27 EUR |
| 72+ | 1 EUR |
| 76+ | 0.94 EUR |
| 500+ | 0.92 EUR |
| BAT6402VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SC79; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Case: SC79
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SC79; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Case: SC79
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 7210 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 262+ | 0.27 EUR |
| 329+ | 0.22 EUR |
| 454+ | 0.16 EUR |
| 845+ | 0.085 EUR |
| 893+ | 0.08 EUR |
| TLE4906KHTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Mounting: SMT
Operating temperature: -40...150°C
Category: Hall Sensors
Description: Sensor: Hall; unipolar; SC59; 5÷13.5mT; Usup: 2.7÷18VDC; SMT
Type of sensor: Hall
Kind of sensor: unipolar
Case: SC59
Range of detectable magnetic field: 5...13.5mT
Supply voltage: 2.7...18V DC
Mounting: SMT
Operating temperature: -40...150°C
auf Bestellung 1215 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 58+ | 1.24 EUR |
| 68+ | 1.06 EUR |
| 132+ | 0.54 EUR |
| 143+ | 0.5 EUR |
| TLE4913HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SC59; -5÷5mT; Usup: 2.4÷5.5VDC; SMT
Type of sensor: Hall
Kind of sensor: omnipolar
Case: SC59
Range of detectable magnetic field: -5...5mT
Supply voltage: 2.4...5.5V DC
Mounting: SMT
Operating temperature: -40...85°C
Category: Hall Sensors
Description: Sensor: Hall; omnipolar; SC59; -5÷5mT; Usup: 2.4÷5.5VDC; SMT
Type of sensor: Hall
Kind of sensor: omnipolar
Case: SC59
Range of detectable magnetic field: -5...5mT
Supply voltage: 2.4...5.5V DC
Mounting: SMT
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
| TLE4935L |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; P-SSO-3-2; -20÷20mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: latch
Case: P-SSO-3-2
Range of detectable magnetic field: -20...20mT
Supply voltage: 3.8...24V DC
Mounting: THT
Operating temperature: -40...150°C
Category: Hall Sensors
Description: Sensor: Hall; latch; P-SSO-3-2; -20÷20mT; Usup: 3.8÷24VDC; THT
Type of sensor: Hall
Kind of sensor: latch
Case: P-SSO-3-2
Range of detectable magnetic field: -20...20mT
Supply voltage: 3.8...24V DC
Mounting: THT
Operating temperature: -40...150°C
auf Bestellung 469 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.46 EUR |
| 55+ | 1.32 EUR |
| 72+ | 1 EUR |
| 76+ | 0.94 EUR |
| BSS816NWH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT323
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 4094 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 288+ | 0.25 EUR |
| 478+ | 0.15 EUR |
| 555+ | 0.13 EUR |
| 1185+ | 0.06 EUR |
| 1254+ | 0.057 EUR |
| ND104N12K |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 104A; BG-PB20-1; Ufmax: 1.4V
Max. forward impulse current: 2.9kA
Max. forward voltage: 1.4V
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 104A
Type of module: diode
Semiconductor structure: single diode
Case: BG-PB20-1
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 104A; BG-PB20-1; Ufmax: 1.4V
Max. forward impulse current: 2.9kA
Max. forward voltage: 1.4V
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 104A
Type of module: diode
Semiconductor structure: single diode
Case: BG-PB20-1
Produkt ist nicht verfügbar
| IRS4426SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Power: 625mW
Number of channels: 2
Output current: -3.3...2.3A
Turn-on time: 50ns
Turn-off time: 50ns
Type of integrated circuit: driver
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 6...20V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Power: 625mW
Number of channels: 2
Output current: -3.3...2.3A
Turn-on time: 50ns
Turn-off time: 50ns
Type of integrated circuit: driver
Kind of package: tube
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8
Supply voltage: 6...20V DC
Produkt ist nicht verfügbar
| BAT1704WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 4V; 0.13A; SOT323; 150mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Case: SOT323
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 4V; 0.13A; SOT323; 150mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Case: SOT323
Power dissipation: 0.15W
auf Bestellung 407 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 226+ | 0.32 EUR |
| 374+ | 0.19 EUR |
| 407+ | 0.17 EUR |
| BFP405H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Frequency: 25GHz
Collector-emitter voltage: 4.5V
Current gain: 90...130
Collector current: 25mA
Type of transistor: NPN
Power dissipation: 75mW
Polarisation: bipolar
Kind of package: reel; tape
Technology: SIEGET™
Kind of transistor: RF
Mounting: SMD
Case: SOT343
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Frequency: 25GHz
Collector-emitter voltage: 4.5V
Current gain: 90...130
Collector current: 25mA
Type of transistor: NPN
Power dissipation: 75mW
Polarisation: bipolar
Kind of package: reel; tape
Technology: SIEGET™
Kind of transistor: RF
Mounting: SMD
Case: SOT343
Produkt ist nicht verfügbar
| IRFS4227TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 62A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFS4229TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFS4321TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 411 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 3.89 EUR |
| 38+ | 1.89 EUR |
| 40+ | 1.79 EUR |