IPD60R210PFD7SAUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 600V 16A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.13 EUR |
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Technische Details IPD60R210PFD7SAUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 16A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V, Power Dissipation (Max): 64W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 240µA, Supplier Device Package: PG-TO252-3-344, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V.
Weitere Produktangebote IPD60R210PFD7SAUMA1 nach Preis ab 1.13 EUR bis 2.78 EUR
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IPD60R210PFD7SAUMA1 | Hersteller : Infineon Technologies |
MOSFETs N |
auf Bestellung 1712 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R210PFD7SAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 16A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 240µA Supplier Device Package: PG-TO252-3-344 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V |
auf Bestellung 14450 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD60R210PFD7SAUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A Mounting: SMD Power dissipation: 64W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 386mΩ Drain current: 10A Drain-source voltage: 600V Case: TO252 Technology: CoolMOS™ PFD7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 42A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| IPD60R210PFD7SAUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A Mounting: SMD Power dissipation: 64W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 386mΩ Drain current: 10A Drain-source voltage: 600V Case: TO252 Technology: CoolMOS™ PFD7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 42A |
Produkt ist nicht verfügbar |