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IRF640NPBF IRF640NPBF INFINEON TECHNOLOGIES irf640n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 44.7nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1691 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
90+ 0.8 EUR
121+ 0.59 EUR
128+ 0.56 EUR
500+ 0.54 EUR
Mindestbestellmenge: 74
IRF640NSTRLPBF IRF640NSTRLPBF INFINEON TECHNOLOGIES irf640npbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 762 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
79+ 0.92 EUR
114+ 0.63 EUR
122+ 0.59 EUR
Mindestbestellmenge: 66
IRL540NPBF IRL540NPBF INFINEON TECHNOLOGIES irl540n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Kind of package: tube
Mounting: THT
Gate charge: 49.3nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: TO220AB
Drain-source voltage: 100V
Drain current: 36A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
auf Bestellung 6207 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
70+ 1.04 EUR
134+ 0.53 EUR
142+ 0.5 EUR
5000+ 0.49 EUR
Mindestbestellmenge: 59
IRFP4668PBF IRFP4668PBF INFINEON TECHNOLOGIES irfp4668pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SPD04N60C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; Idm: 13.5A; 50W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 13.5A
Power dissipation: 50W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
SPP24N60C3 SPP24N60C3 INFINEON TECHNOLOGIES SPP24N60C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.4A; 240W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.4A
Power dissipation: 240W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSP373NH6327XTSA1 BSP373NH6327XTSA1 INFINEON TECHNOLOGIES BSP373NH6327-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 100V
Drain current: 1.8A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
auf Bestellung 1057 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.56 EUR
97+ 0.74 EUR
106+ 0.67 EUR
138+ 0.52 EUR
146+ 0.49 EUR
Mindestbestellmenge: 46
IRF3710LPBF IRF3710LPBF INFINEON TECHNOLOGIES irf3710spbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO262
Mounting: THT
Kind of channel: enhanced
Case: TO262
Drain-source voltage: 100V
Drain current: 57A
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
IRF3710PBF IRF3710PBF INFINEON TECHNOLOGIES irf3710.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 100V
Drain current: 57A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Gate charge: 86.7nC
Technology: HEXFET®
auf Bestellung 418 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
60+ 1.2 EUR
80+ 0.9 EUR
84+ 0.86 EUR
Mindestbestellmenge: 45
IRF3710STRLPBF IRF3710STRLPBF INFINEON TECHNOLOGIES irf3710spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Case: D2PAK
Drain-source voltage: 100V
Drain current: 57A
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
IRF3710STRRPBF IRF3710STRRPBF INFINEON TECHNOLOGIES irf3710spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Case: D2PAK
Drain-source voltage: 100V
Drain current: 57A
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
IRF3710ZPBF IRF3710ZPBF INFINEON TECHNOLOGIES irf3710z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 100V
Drain current: 59A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Gate charge: 82nC
Technology: HEXFET®
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.67 EUR
50+ 1.44 EUR
85+ 0.85 EUR
90+ 0.8 EUR
Mindestbestellmenge: 43
IRF3710ZSTRLPBF IRF3710ZSTRLPBF INFINEON TECHNOLOGIES irf3710zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Case: D2PAK
Drain-source voltage: 100V
Drain current: 59A
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
AUIRF3710ZSTRL AUIRF3710ZSTRL INFINEON TECHNOLOGIES auirf3710z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Case: D2PAK
Drain-source voltage: 100V
Drain current: 59A
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
IRFP250MPBF IRFP250MPBF INFINEON TECHNOLOGIES irfp250mpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AD
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFP250NPBF IRFP250NPBF INFINEON TECHNOLOGIES irfp250n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.95 EUR
45+ 1.62 EUR
65+ 1.12 EUR
68+ 1.06 EUR
Mindestbestellmenge: 25
IRFP260MPBF IRFP260MPBF INFINEON TECHNOLOGIES irfp260mpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.16 EUR
38+ 1.89 EUR
40+ 1.79 EUR
Mindestbestellmenge: 23
IRFP260NPBF IRFP260NPBF INFINEON TECHNOLOGIES irfp260n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.75 EUR
22+ 3.36 EUR
50+ 1.46 EUR
53+ 1.37 EUR
Mindestbestellmenge: 16
IRFP2907PBF IRFP2907PBF INFINEON TECHNOLOGIES irfp2907.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 209A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 209A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.09 EUR
25+ 2.96 EUR
26+ 2.8 EUR
Mindestbestellmenge: 15
IRF1407PBF IRF1407PBF INFINEON TECHNOLOGIES irf1407pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.12 EUR
29+ 2.55 EUR
53+ 1.36 EUR
56+ 1.29 EUR
Mindestbestellmenge: 23
IRF1407STRLPBF INFINEON TECHNOLOGIES irf1407spbf.pdf?fileId=5546d462533600a4015355db309b18ca Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 520A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPA65R380C6XKSA1 IPA65R380C6XKSA1 INFINEON TECHNOLOGIES IPA65R380C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPA80R360P7XKSA1 IPA80R360P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPA80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b23b4067a2b98 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; Idm: 34A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Pulsed drain current: 34A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Version: ESD
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.79 EUR
39+ 1.84 EUR
41+ 1.74 EUR
Mindestbestellmenge: 26
IKA08N65ET6XKSA1 IKA08N65ET6XKSA1 INFINEON TECHNOLOGIES IKA08N65ET6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 7A; 17W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 650V
Collector current: 7A
Power dissipation: 17W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 25A
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Manufacturer series: T6
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKP08N65H5XKSA1 IKP08N65H5XKSA1 INFINEON TECHNOLOGIES IKP08N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 18A
Power dissipation: 70W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
TLE7258SJXUMA1 TLE7258SJXUMA1 INFINEON TECHNOLOGIES TLE7258.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-DSO-8
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
DC supply current: 3mA
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
70+ 1.03 EUR
111+ 0.65 EUR
117+ 0.61 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 60
SPA08N80C3 SPA08N80C3 INFINEON TECHNOLOGIES INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP
Kind of package: tube
Drain-source voltage: 800V
Drain current: 8A
On-state resistance: 0.65Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3-FP
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.66 EUR
30+ 2.43 EUR
39+ 1.86 EUR
41+ 1.76 EUR
Mindestbestellmenge: 27
SPP08N80C3 SPP08N80C3 INFINEON TECHNOLOGIES Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 493 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.37 EUR
25+ 2.96 EUR
28+ 2.56 EUR
30+ 2.42 EUR
Mindestbestellmenge: 22
IKA10N65ET6XKSA2 IKA10N65ET6XKSA2 INFINEON TECHNOLOGIES IKA10N65ET6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 20W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 42.5A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Manufacturer series: T6
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.93 EUR
41+ 1.77 EUR
49+ 1.49 EUR
52+ 1.4 EUR
Mindestbestellmenge: 38
IGB15N65S5ATMA1 IGB15N65S5ATMA1 INFINEON TECHNOLOGIES IGB15N65S5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 23A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 23A
Power dissipation: 52.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 147ns
Produkt ist nicht verfügbar
IKA15N65ET6XKSA2 IKA15N65ET6XKSA2 INFINEON TECHNOLOGIES IKA15N65ET6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 650V
Collector current: 11A
Power dissipation: 22W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 57.5A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Manufacturer series: T6
Turn-on time: 50ns
Turn-off time: 202ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.35 EUR
43+ 1.7 EUR
45+ 1.62 EUR
47+ 1.53 EUR
Mindestbestellmenge: 31
IKB15N65EH5ATMA1 IKB15N65EH5ATMA1 INFINEON TECHNOLOGIES IKB15N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 18A
Power dissipation: 52.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Turn-on time: 33ns
Turn-off time: 172ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKP15N65H5XKSA1 IKP15N65H5XKSA1 INFINEON TECHNOLOGIES IKP15N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 105W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.09 EUR
31+ 2.35 EUR
33+ 2.22 EUR
100+ 2.14 EUR
Mindestbestellmenge: 24
SPW20N60C3 SPW20N60C3 INFINEON TECHNOLOGIES SPW20N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SPP20N60C3 SPP20N60C3 INFINEON TECHNOLOGIES spp20n60c3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.7A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 318 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.86 EUR
22+ 3.4 EUR
24+ 3.06 EUR
25+ 2.9 EUR
50+ 2.86 EUR
100+ 2.79 EUR
Mindestbestellmenge: 19
BSS169H6327XTSA1 BSS169H6327XTSA1 INFINEON TECHNOLOGIES BSS169H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Technology: SIPMOS™
Mounting: SMD
Case: SOT23
Power dissipation: 0.36W
Polarisation: unipolar
Kind of channel: depleted
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
auf Bestellung 2703 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
206+ 0.35 EUR
241+ 0.3 EUR
500+ 0.14 EUR
532+ 0.13 EUR
Mindestbestellmenge: 152
IPP60R190P6XKSA1 IPP60R190P6XKSA1 INFINEON TECHNOLOGIES IPP60R190P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.16 EUR
33+ 2.22 EUR
35+ 2.09 EUR
Mindestbestellmenge: 23
BC850CWH6327 BC850CWH6327 INFINEON TECHNOLOGIES Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 4353 Stücke:
Lieferzeit 14-21 Tag (e)
741+0.097 EUR
1013+ 0.071 EUR
1147+ 0.062 EUR
1323+ 0.054 EUR
1401+ 0.051 EUR
3000+ 0.05 EUR
Mindestbestellmenge: 741
BFP450H6327 BFP450H6327 INFINEON TECHNOLOGIES BFP450H6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 0.17A
Power dissipation: 0.5W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 24GHz
auf Bestellung 1292 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
128+ 0.56 EUR
143+ 0.5 EUR
158+ 0.45 EUR
163+ 0.44 EUR
167+ 0.43 EUR
250+ 0.41 EUR
Mindestbestellmenge: 105
IR2113SPBF IR2113SPBF INFINEON TECHNOLOGIES IR2113SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Power: 1.25W
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...20V DC
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Case: SO16-W
Turn-on time: 145ns
Turn-off time: 111ns
Output current: -2...2A
auf Bestellung 315 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.78 EUR
17+ 4.29 EUR
22+ 3.26 EUR
24+ 3.09 EUR
Mindestbestellmenge: 15
IR2113STRPBF IR2113STRPBF INFINEON TECHNOLOGIES IR2113STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Power: 1.25W
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...20V DC
Type of integrated circuit: driver
Number of channels: 2
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Case: SO16-W
Turn-on time: 145ns
Turn-off time: 111ns
Output current: -2...2A
auf Bestellung 832 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.47 EUR
40+ 1.82 EUR
42+ 1.72 EUR
Mindestbestellmenge: 21
BCV61BE6327 BCV61BE6327 INFINEON TECHNOLOGIES BCV61BE6327-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
BCV61CE6327 BCV61CE6327 INFINEON TECHNOLOGIES bcv61.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1395 Stücke:
Lieferzeit 14-21 Tag (e)
370+0.19 EUR
435+ 0.17 EUR
485+ 0.15 EUR
530+ 0.14 EUR
560+ 0.13 EUR
Mindestbestellmenge: 370
IRF5305PBF IRF5305PBF INFINEON TECHNOLOGIES irf5305.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1228 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.33 EUR
70+ 1.03 EUR
128+ 0.56 EUR
135+ 0.53 EUR
Mindestbestellmenge: 54
IRF5305STRLPBF IRF5305STRLPBF INFINEON TECHNOLOGIES irf5305spbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.8 EUR
66+ 1.1 EUR
94+ 0.77 EUR
99+ 0.73 EUR
Mindestbestellmenge: 40
IRF530NPBF IRF530NPBF INFINEON TECHNOLOGIES irf530n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 79W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 24.7nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1440 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
93+ 0.78 EUR
197+ 0.36 EUR
208+ 0.34 EUR
Mindestbestellmenge: 80
IRF530NSTRLPBF IRF530NSTRLPBF INFINEON TECHNOLOGIES irf530nspbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 864 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
60+ 1.21 EUR
125+ 0.58 EUR
132+ 0.54 EUR
Mindestbestellmenge: 50
IRLR120NTRPBF IRLR120NTRPBF INFINEON TECHNOLOGIES irlr120npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 39W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 100V
Drain current: 11A
auf Bestellung 1168 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
107+ 0.67 EUR
113+ 0.64 EUR
125+ 0.57 EUR
243+ 0.29 EUR
257+ 0.28 EUR
Mindestbestellmenge: 90
ICE2QS03G ICE2QS03G INFINEON TECHNOLOGIES ICE2QS03G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; PG-DSO-8; flyback; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 500V
Duty cycle factor: 0...50%
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
IRF1010EPBF IRF1010EPBF INFINEON TECHNOLOGIES irf1010e.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.46 EUR
57+ 1.27 EUR
98+ 0.73 EUR
104+ 0.69 EUR
Mindestbestellmenge: 50
IRF1010ESTRLPBF IRF1010ESTRLPBF INFINEON TECHNOLOGIES Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Pulsed drain current: 330A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 605 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.69 EUR
49+ 1.49 EUR
79+ 0.92 EUR
84+ 0.86 EUR
Mindestbestellmenge: 43
IRF1010EZPBF IRF1010EZPBF INFINEON TECHNOLOGIES irf1010ez.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.9 EUR
60+ 1.2 EUR
113+ 0.63 EUR
120+ 0.6 EUR
Mindestbestellmenge: 38
IRF1010NPBF IRF1010NPBF INFINEON TECHNOLOGIES irf1010n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO220AB
Kind of package: tube
Drain-source voltage: 55V
Drain current: 72A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Gate charge: 80nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.69 EUR
50+ 1.44 EUR
75+ 0.96 EUR
80+ 0.9 EUR
Mindestbestellmenge: 43
IRF1010NSTRLPBF IRF1010NSTRLPBF INFINEON TECHNOLOGIES irf1010nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
AUIRF1010ZSTRL AUIRF1010ZSTRL INFINEON TECHNOLOGIES auirf1010z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSP452  BSP452  INFINEON TECHNOLOGIES BSP452.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 3775 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.14 EUR
36+ 2.02 EUR
44+ 1.66 EUR
46+ 1.56 EUR
1000+ 1.53 EUR
Mindestbestellmenge: 34
IGCM15F60GA IGCM15F60GA INFINEON TECHNOLOGIES IGCM15F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 29W
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.94 EUR
7+ 10.22 EUR
8+ 9.67 EUR
Mindestbestellmenge: 5
IRFB4110PBF IRFB4110PBF INFINEON TECHNOLOGIES irfb4110pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.42 EUR
31+ 2.35 EUR
33+ 2.22 EUR
Mindestbestellmenge: 21
IR2153DPBF IR2153DPBF INFINEON TECHNOLOGIES IR2153DPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Operating temperature: -40...125°C
Power: 1W
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: DIP8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.26 EUR
27+ 2.75 EUR
39+ 1.87 EUR
41+ 1.77 EUR
Mindestbestellmenge: 22
IRS2153DPBF IRS2153DPBF INFINEON TECHNOLOGIES irs2153d.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -260...180mA
Power: 1W
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.9 EUR
29+ 2.52 EUR
30+ 2.45 EUR
31+ 2.37 EUR
50+ 2.29 EUR
Mindestbestellmenge: 25
IRF640NPBF irf640n.pdf
IRF640NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 44.7nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1691 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
74+0.97 EUR
90+ 0.8 EUR
121+ 0.59 EUR
128+ 0.56 EUR
500+ 0.54 EUR
Mindestbestellmenge: 74
IRF640NSTRLPBF irf640npbf.pdf
IRF640NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 762 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
66+1.09 EUR
79+ 0.92 EUR
114+ 0.63 EUR
122+ 0.59 EUR
Mindestbestellmenge: 66
IRL540NPBF irl540n.pdf
IRL540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Kind of package: tube
Mounting: THT
Gate charge: 49.3nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: TO220AB
Drain-source voltage: 100V
Drain current: 36A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
auf Bestellung 6207 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
70+ 1.04 EUR
134+ 0.53 EUR
142+ 0.5 EUR
5000+ 0.49 EUR
Mindestbestellmenge: 59
IRFP4668PBF irfp4668pbf.pdf
IRFP4668PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SPD04N60C3ATMA1 Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; Idm: 13.5A; 50W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 13.5A
Power dissipation: 50W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
SPP24N60C3 description SPP24N60C3.pdf
SPP24N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.4A; 240W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.4A
Power dissipation: 240W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSP373NH6327XTSA1 BSP373NH6327-DTE.pdf
BSP373NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Mounting: SMD
Drain-source voltage: 100V
Drain current: 1.8A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
auf Bestellung 1057 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
46+1.56 EUR
97+ 0.74 EUR
106+ 0.67 EUR
138+ 0.52 EUR
146+ 0.49 EUR
Mindestbestellmenge: 46
IRF3710LPBF irf3710spbf.pdf
IRF3710LPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO262
Mounting: THT
Kind of channel: enhanced
Case: TO262
Drain-source voltage: 100V
Drain current: 57A
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
IRF3710PBF irf3710.pdf
IRF3710PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 100V
Drain current: 57A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Gate charge: 86.7nC
Technology: HEXFET®
auf Bestellung 418 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
45+1.62 EUR
60+ 1.2 EUR
80+ 0.9 EUR
84+ 0.86 EUR
Mindestbestellmenge: 45
IRF3710STRLPBF irf3710spbf.pdf
IRF3710STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Case: D2PAK
Drain-source voltage: 100V
Drain current: 57A
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
IRF3710STRRPBF irf3710spbf.pdf
IRF3710STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Case: D2PAK
Drain-source voltage: 100V
Drain current: 57A
Type of transistor: N-MOSFET
Power dissipation: 200W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
IRF3710ZPBF irf3710z.pdf
IRF3710ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 100V
Drain current: 59A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Gate charge: 82nC
Technology: HEXFET®
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
43+1.67 EUR
50+ 1.44 EUR
85+ 0.85 EUR
90+ 0.8 EUR
Mindestbestellmenge: 43
IRF3710ZSTRLPBF irf3710zpbf.pdf
IRF3710ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Case: D2PAK
Drain-source voltage: 100V
Drain current: 59A
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
AUIRF3710ZSTRL auirf3710z.pdf
AUIRF3710ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Case: D2PAK
Drain-source voltage: 100V
Drain current: 59A
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Technology: HEXFET®
Produkt ist nicht verfügbar
IRFP250MPBF irfp250mpbf.pdf
IRFP250MPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AD
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFP250NPBF description irfp250n.pdf
IRFP250NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
25+2.95 EUR
45+ 1.62 EUR
65+ 1.12 EUR
68+ 1.06 EUR
Mindestbestellmenge: 25
IRFP260MPBF irfp260mpbf.pdf
IRFP260MPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
23+3.16 EUR
38+ 1.89 EUR
40+ 1.79 EUR
Mindestbestellmenge: 23
IRFP260NPBF irfp260n.pdf
IRFP260NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
16+4.75 EUR
22+ 3.36 EUR
50+ 1.46 EUR
53+ 1.37 EUR
Mindestbestellmenge: 16
IRFP2907PBF irfp2907.pdf
IRFP2907PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 209A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 209A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
15+5.09 EUR
25+ 2.96 EUR
26+ 2.8 EUR
Mindestbestellmenge: 15
IRF1407PBF description irf1407pbf.pdf
IRF1407PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
23+3.12 EUR
29+ 2.55 EUR
53+ 1.36 EUR
56+ 1.29 EUR
Mindestbestellmenge: 23
IRF1407STRLPBF irf1407spbf.pdf?fileId=5546d462533600a4015355db309b18ca
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 520A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPA65R380C6XKSA1 IPA65R380C6-DTE.pdf
IPA65R380C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IPA80R360P7XKSA1 Infineon-IPA80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b23b4067a2b98
IPA80R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; Idm: 34A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Pulsed drain current: 34A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Version: ESD
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
26+2.79 EUR
39+ 1.84 EUR
41+ 1.74 EUR
Mindestbestellmenge: 26
IKA08N65ET6XKSA1 IKA08N65ET6.pdf
IKA08N65ET6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 7A; 17W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 650V
Collector current: 7A
Power dissipation: 17W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 25A
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Manufacturer series: T6
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKP08N65H5XKSA1 IKP08N65H5-DTE.pdf
IKP08N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 18A
Power dissipation: 70W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
TLE7258SJXUMA1 TLE7258.pdf
TLE7258SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Interface: LIN
Supply voltage: 5.5...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: PG-DSO-8
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
DC supply current: 3mA
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
60+1.2 EUR
70+ 1.03 EUR
111+ 0.65 EUR
117+ 0.61 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 60
SPA08N80C3 INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw
SPA08N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP
Kind of package: tube
Drain-source voltage: 800V
Drain current: 8A
On-state resistance: 0.65Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3-FP
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
27+2.66 EUR
30+ 2.43 EUR
39+ 1.86 EUR
41+ 1.76 EUR
Mindestbestellmenge: 27
SPP08N80C3 Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a
SPP08N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 493 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
22+3.37 EUR
25+ 2.96 EUR
28+ 2.56 EUR
30+ 2.42 EUR
Mindestbestellmenge: 22
IKA10N65ET6XKSA2 IKA10N65ET6.pdf
IKA10N65ET6XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 20W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 42.5A
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Manufacturer series: T6
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
38+1.93 EUR
41+ 1.77 EUR
49+ 1.49 EUR
52+ 1.4 EUR
Mindestbestellmenge: 38
IGB15N65S5ATMA1 IGB15N65S5.pdf
IGB15N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 23A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 23A
Power dissipation: 52.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 147ns
Produkt ist nicht verfügbar
IKA15N65ET6XKSA2 IKA15N65ET6.pdf
IKA15N65ET6XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 11A; 22W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 650V
Collector current: 11A
Power dissipation: 22W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 57.5A
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Manufacturer series: T6
Turn-on time: 50ns
Turn-off time: 202ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
31+2.35 EUR
43+ 1.7 EUR
45+ 1.62 EUR
47+ 1.53 EUR
Mindestbestellmenge: 31
IKB15N65EH5ATMA1 IKB15N65EH5.pdf
IKB15N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 18A
Power dissipation: 52.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Turn-on time: 33ns
Turn-off time: 172ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
IKP15N65H5XKSA1 IKP15N65H5-DTE.pdf
IKP15N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 105W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
24+3.09 EUR
31+ 2.35 EUR
33+ 2.22 EUR
100+ 2.14 EUR
Mindestbestellmenge: 24
SPW20N60C3 SPW20N60C3.pdf
SPW20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
SPP20N60C3 spp20n60c3.pdf
SPP20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.7A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 318 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
19+3.86 EUR
22+ 3.4 EUR
24+ 3.06 EUR
25+ 2.9 EUR
50+ 2.86 EUR
100+ 2.79 EUR
Mindestbestellmenge: 19
BSS169H6327XTSA1 BSS169H6327XTSA1.pdf
BSS169H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Technology: SIPMOS™
Mounting: SMD
Case: SOT23
Power dissipation: 0.36W
Polarisation: unipolar
Kind of channel: depleted
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
auf Bestellung 2703 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
152+0.47 EUR
206+ 0.35 EUR
241+ 0.3 EUR
500+ 0.14 EUR
532+ 0.13 EUR
Mindestbestellmenge: 152
IPP60R190P6XKSA1 IPP60R190P6-DTE.pdf
IPP60R190P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
23+3.16 EUR
33+ 2.22 EUR
35+ 2.09 EUR
Mindestbestellmenge: 23
BC850CWH6327
BC850CWH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 4353 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
741+0.097 EUR
1013+ 0.071 EUR
1147+ 0.062 EUR
1323+ 0.054 EUR
1401+ 0.051 EUR
3000+ 0.05 EUR
Mindestbestellmenge: 741
BFP450H6327 BFP450H6327-dte.pdf
BFP450H6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 0.17A
Power dissipation: 0.5W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 24GHz
auf Bestellung 1292 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
105+0.69 EUR
128+ 0.56 EUR
143+ 0.5 EUR
158+ 0.45 EUR
163+ 0.44 EUR
167+ 0.43 EUR
250+ 0.41 EUR
Mindestbestellmenge: 105
IR2113SPBF description IR2113SPBF.pdf
IR2113SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Power: 1.25W
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...20V DC
Type of integrated circuit: driver
Number of channels: 2
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Case: SO16-W
Turn-on time: 145ns
Turn-off time: 111ns
Output current: -2...2A
auf Bestellung 315 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
15+4.78 EUR
17+ 4.29 EUR
22+ 3.26 EUR
24+ 3.09 EUR
Mindestbestellmenge: 15
IR2113STRPBF IR2113STRPBF.pdf
IR2113STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Power: 1.25W
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 10...20V DC
Type of integrated circuit: driver
Number of channels: 2
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Case: SO16-W
Turn-on time: 145ns
Turn-off time: 111ns
Output current: -2...2A
auf Bestellung 832 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
21+3.47 EUR
40+ 1.82 EUR
42+ 1.72 EUR
Mindestbestellmenge: 21
BCV61BE6327 BCV61BE6327-DTE.pdf
BCV61BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
BCV61CE6327 bcv61.pdf
BCV61CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1395 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
435+ 0.17 EUR
485+ 0.15 EUR
530+ 0.14 EUR
560+ 0.13 EUR
Mindestbestellmenge: 370
IRF5305PBF irf5305.pdf
IRF5305PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1228 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
54+1.33 EUR
70+ 1.03 EUR
128+ 0.56 EUR
135+ 0.53 EUR
Mindestbestellmenge: 54
IRF5305STRLPBF description irf5305spbf.pdf
IRF5305STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
40+1.8 EUR
66+ 1.1 EUR
94+ 0.77 EUR
99+ 0.73 EUR
Mindestbestellmenge: 40
IRF530NPBF irf530n.pdf
IRF530NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 79W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 24.7nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
80+0.9 EUR
93+ 0.78 EUR
197+ 0.36 EUR
208+ 0.34 EUR
Mindestbestellmenge: 80
IRF530NSTRLPBF description irf530nspbf.pdf
IRF530NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 864 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
50+1.44 EUR
60+ 1.21 EUR
125+ 0.58 EUR
132+ 0.54 EUR
Mindestbestellmenge: 50
IRLR120NTRPBF description irlr120npbf.pdf
IRLR120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 39W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 100V
Drain current: 11A
auf Bestellung 1168 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
90+0.8 EUR
107+ 0.67 EUR
113+ 0.64 EUR
125+ 0.57 EUR
243+ 0.29 EUR
257+ 0.28 EUR
Mindestbestellmenge: 90
ICE2QS03G ICE2QS03G.pdf
ICE2QS03G
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; PG-DSO-8; flyback; 0÷50%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 500V
Duty cycle factor: 0...50%
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
IRF1010EPBF description irf1010e.pdf
IRF1010EPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 81A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.6nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
50+1.46 EUR
57+ 1.27 EUR
98+ 0.73 EUR
104+ 0.69 EUR
Mindestbestellmenge: 50
IRF1010ESTRLPBF Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b
IRF1010ESTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Pulsed drain current: 330A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 605 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
43+1.69 EUR
49+ 1.49 EUR
79+ 0.92 EUR
84+ 0.86 EUR
Mindestbestellmenge: 43
IRF1010EZPBF description irf1010ez.pdf
IRF1010EZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 84A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
38+1.9 EUR
60+ 1.2 EUR
113+ 0.63 EUR
120+ 0.6 EUR
Mindestbestellmenge: 38
IRF1010NPBF description irf1010n.pdf
IRF1010NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO220AB
Kind of package: tube
Drain-source voltage: 55V
Drain current: 72A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Gate charge: 80nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
43+1.69 EUR
50+ 1.44 EUR
75+ 0.96 EUR
80+ 0.9 EUR
Mindestbestellmenge: 43
IRF1010NSTRLPBF irf1010nspbf.pdf
IRF1010NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
AUIRF1010ZSTRL auirf1010z.pdf
AUIRF1010ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
BSP452  BSP452.pdf
BSP452 
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.16Ω
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 3775 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
34+2.14 EUR
36+ 2.02 EUR
44+ 1.66 EUR
46+ 1.56 EUR
1000+ 1.53 EUR
Mindestbestellmenge: 34
IGCM15F60GA IGCM15F60GA.pdf
IGCM15F60GA
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 29W
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+14.94 EUR
7+ 10.22 EUR
8+ 9.67 EUR
Mindestbestellmenge: 5
IRFB4110PBF irfb4110pbf.pdf
IRFB4110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
21+3.42 EUR
31+ 2.35 EUR
33+ 2.22 EUR
Mindestbestellmenge: 21
IR2153DPBF description IR2153DPBF.pdf
IR2153DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Mounting: THT
Operating temperature: -40...125°C
Power: 1W
Number of channels: 2
Type of integrated circuit: driver
Turn-off time: 40ns
Turn-on time: 80ns
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Case: DIP8
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
22+3.26 EUR
27+ 2.75 EUR
39+ 1.87 EUR
41+ 1.77 EUR
Mindestbestellmenge: 22
IRS2153DPBF description irs2153d.pdf
IRS2153DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -260...180mA
Power: 1W
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
25+2.9 EUR
29+ 2.52 EUR
30+ 2.45 EUR
31+ 2.37 EUR
50+ 2.29 EUR
Mindestbestellmenge: 25
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