Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (139941) > Seite 2292 nach 2333

Wählen Sie Seite:   [  << Vorherige Seite ]  1 233 466 699 932 1165 1398 1631 1864 2097 2287 2288 2289 2290 2291 2292 2293 2294 2295 2296 2297 2330 2333  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
IRFZ44EPBF IRFZ44EPBF INFINEON TECHNOLOGIES irfz44e.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
66+ 1.1 EUR
97+ 0.74 EUR
103+ 0.7 EUR
Mindestbestellmenge: 56
IRFZ44ESTRLPBF IRFZ44ESTRLPBF INFINEON TECHNOLOGIES irfz44espbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFZ44VPBF IRFZ44VPBF INFINEON TECHNOLOGIES irfz44v.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 55A; 115W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 55A
Power dissipation: 115W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 44.7nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
65+ 1.12 EUR
97+ 0.74 EUR
103+ 0.7 EUR
Mindestbestellmenge: 59
IRFZ44VZPBF IRFZ44VZPBF INFINEON TECHNOLOGIES IRFZ44VZPBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
Mindestbestellmenge: 7
IRFZ44VZSPBF IRFZ44VZSPBF INFINEON TECHNOLOGIES irfz44vzpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 92W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 92W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.1 EUR
38+ 1.9 EUR
48+ 1.49 EUR
Mindestbestellmenge: 35
IRFZ44ZPBF IRFZ44ZPBF INFINEON TECHNOLOGIES irfz44z.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
89+ 0.81 EUR
117+ 0.61 EUR
123+ 0.58 EUR
Mindestbestellmenge: 76
IRFZ44ZSTRRPBF IRFZ44ZSTRRPBF INFINEON TECHNOLOGIES IRFZ44ZSTRRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
AUIRFZ44VZS AUIRFZ44VZS INFINEON TECHNOLOGIES auirfz44vzs.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 57A; 92W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 57A
Power dissipation: 92W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRLR024NTRPBF IRLR024NTRPBF INFINEON TECHNOLOGIES irlr024npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 16037 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
216+ 0.33 EUR
229+ 0.31 EUR
Mindestbestellmenge: 73
IRLML2030TRPBF IRLML2030TRPBF INFINEON TECHNOLOGIES irlml2030pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 7560 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
365+ 0.2 EUR
549+ 0.13 EUR
642+ 0.11 EUR
910+ 0.079 EUR
962+ 0.074 EUR
1000+ 0.073 EUR
3000+ 0.072 EUR
Mindestbestellmenge: 239
IRLML2060TRPBF IRLML2060TRPBF INFINEON TECHNOLOGIES irlml2060pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 1706 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
269+ 0.27 EUR
451+ 0.16 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 193
IRLML2246TRPBF IRLML2246TRPBF INFINEON TECHNOLOGIES irlml2246pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Kind of package: reel
Drain-source voltage: -20V
Drain current: -2.6A
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: SOT23
auf Bestellung 3040 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
221+ 0.32 EUR
286+ 0.25 EUR
477+ 0.15 EUR
820+ 0.087 EUR
878+ 0.082 EUR
Mindestbestellmenge: 139
IRLML2402TRPBF IRLML2402TRPBF INFINEON TECHNOLOGIES IRLML2402TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; 0.54W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Power dissipation: 0.54W
Case: SOT23
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Part status: Not recommended for new designs
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
134+0.53 EUR
Mindestbestellmenge: 134
IRLML2502TRPBF IRLML2502TRPBF INFINEON TECHNOLOGIES IRLML2502TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 6682 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
159+ 0.45 EUR
182+ 0.39 EUR
232+ 0.31 EUR
283+ 0.25 EUR
532+ 0.13 EUR
Mindestbestellmenge: 120
IRLML2803TRPBF IRLML2803TRPBF INFINEON TECHNOLOGIES irlml2803.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 1471 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
222+ 0.32 EUR
257+ 0.28 EUR
360+ 0.2 EUR
414+ 0.17 EUR
589+ 0.12 EUR
625+ 0.11 EUR
Mindestbestellmenge: 162
IRF2807PBF IRF2807PBF INFINEON TECHNOLOGIES irf2807.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 106.7nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 464 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.07 EUR
37+ 1.94 EUR
44+ 1.66 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 35
IRF2807STRLPBF IRF2807STRLPBF INFINEON TECHNOLOGIES irf2807spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF2807STRRPBF IRF2807STRRPBF INFINEON TECHNOLOGIES irf2807spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF2807ZPBF IRF2807ZPBF INFINEON TECHNOLOGIES irf2807z.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 89A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.76 EUR
65+ 1.1 EUR
70+ 1.02 EUR
Mindestbestellmenge: 41
IR21844PBF IR21844PBF INFINEON TECHNOLOGIES IR21844SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2.3...1.9A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.56 EUR
12+ 5.96 EUR
Mindestbestellmenge: 11
IR21844SPBF IR21844SPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.7 EUR
31+ 2.37 EUR
32+ 2.25 EUR
Mindestbestellmenge: 16
IR21844STRPBF IR21844STRPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Produkt ist nicht verfügbar
IR2184PBF IR2184PBF INFINEON TECHNOLOGIES IR21844SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.59 EUR
32+ 2.26 EUR
34+ 2.14 EUR
Mindestbestellmenge: 20
IR2184SPBF IR2184SPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.96 EUR
20+ 3.58 EUR
27+ 2.73 EUR
28+ 2.59 EUR
Mindestbestellmenge: 19
IR2184STRPBF IR2184STRPBF INFINEON TECHNOLOGIES IR21844SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 2641 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.2 EUR
19+ 3.93 EUR
35+ 2.1 EUR
36+ 1.99 EUR
Mindestbestellmenge: 18
BAT60AE6327HTSA1 BAT60AE6327HTSA1 INFINEON TECHNOLOGIES BAT60AE6327-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 10V; 3A; SOD323; 1.35W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Case: SOD323
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 3027 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
219+ 0.33 EUR
317+ 0.23 EUR
642+ 0.11 EUR
Mindestbestellmenge: 139
BAT60BE6327HTSA1 BAT60BE6327HTSA1 INFINEON TECHNOLOGIES BAT60BE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 10V; 3A; SOD323; 1.35W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Case: SOD323
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 4171 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
197+ 0.36 EUR
300+ 0.24 EUR
650+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 148
IRFB260NPBF IRFB260NPBF INFINEON TECHNOLOGIES irfb260n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 56A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.12 EUR
37+ 1.93 EUR
Mindestbestellmenge: 23
IRS21844SPBF IRS21844SPBF INFINEON TECHNOLOGIES irs2184.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Produkt ist nicht verfügbar
BTS452R BTS452R INFINEON TECHNOLOGIES BTS452R-DTE.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD
Case: PG-TO252-5-11
Supply voltage: 6...52V DC
On-state resistance: 0.2Ω
Output voltage: 62V
Output current: 1.8A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Produkt ist nicht verfügbar
BAV70SH6327XTSA1 BAV70SH6327XTSA1 INFINEON TECHNOLOGIES BAV70E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT363; 250mW; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.25W
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
auf Bestellung 2830 Stücke:
Lieferzeit 14-21 Tag (e)
432+0.17 EUR
697+ 0.1 EUR
863+ 0.083 EUR
913+ 0.078 EUR
Mindestbestellmenge: 432
BAV99SH6327XTSA1 BAV99SH6327XTSA1 INFINEON TECHNOLOGIES BAV99SH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT363; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Features of semiconductor devices: ultrafast switching
Case: SOT363
Power dissipation: 0.25W
Kind of package: reel; tape
auf Bestellung 2979 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
290+ 0.25 EUR
360+ 0.2 EUR
506+ 0.14 EUR
878+ 0.082 EUR
926+ 0.077 EUR
Mindestbestellmenge: 218
IRS2092STRPBF IRS2092STRPBF INFINEON TECHNOLOGIES IRS2092.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 2324 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.86 EUR
17+ 4.35 EUR
29+ 2.53 EUR
30+ 2.4 EUR
Mindestbestellmenge: 15
IPI180N10N3GXKSA1 IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES IPI180N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhanced
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.6 EUR
52+ 1.39 EUR
75+ 0.96 EUR
80+ 0.9 EUR
Mindestbestellmenge: 45
IPP180N10N3GXKSA1 IPP180N10N3GXKSA1 INFINEON TECHNOLOGIES IPP180N10N3G-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7413TRPBF IRF7413TRPBF INFINEON TECHNOLOGIES irf7413pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7413ZTRPBF IRF7413ZTRPBF INFINEON TECHNOLOGIES irf7413zpbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 3775 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
101+ 0.71 EUR
219+ 0.33 EUR
232+ 0.31 EUR
Mindestbestellmenge: 87
IRS20752LTRPBF IRS20752LTRPBF INFINEON TECHNOLOGIES IRS20752ltrpbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Case: SOT23-6
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -240...160mA
Topology: single transistor
Voltage class: 200V
Turn-on time: 225ns
Turn-off time: 255ns
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)
79+0.92 EUR
88+ 0.82 EUR
95+ 0.76 EUR
114+ 0.63 EUR
122+ 0.59 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 79
IRFP064NPBF IRFP064NPBF INFINEON TECHNOLOGIES irfp064n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.1 EUR
Mindestbestellmenge: 23
IRFP3206PBF IRFP3206PBF INFINEON TECHNOLOGIES irfp3206pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.07 EUR
37+ 1.94 EUR
39+ 1.84 EUR
Mindestbestellmenge: 24
IRLML5103TRPBF IRLML5103TRPBF INFINEON TECHNOLOGIES irlml5103pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRF3415PBF IRF3415PBF INFINEON TECHNOLOGIES irf3415.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 406 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
40+ 1.83 EUR
59+ 1.23 EUR
61+ 1.17 EUR
Mindestbestellmenge: 36
IRF3415STRLPBF IRF3415STRLPBF INFINEON TECHNOLOGIES irf3415spbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFP150NPBF IRFP150NPBF INFINEON TECHNOLOGIES irfp150n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.33 EUR
38+ 1.89 EUR
40+ 1.79 EUR
Mindestbestellmenge: 31
IRFP054NPBF IRFP054NPBF INFINEON TECHNOLOGIES irfp054n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.33 EUR
29+ 2.49 EUR
31+ 2.35 EUR
50+ 2.32 EUR
Mindestbestellmenge: 22
BCP5216H6327XTSA1 BCP5216H6327XTSA1 INFINEON TECHNOLOGIES BCP5216H6327XTSA1.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Mounting: SMD
Collector-emitter voltage: 60V
Case: SOT223
Collector current: 1A
Frequency: 125MHz
Type of transistor: PNP
Power dissipation: 2W
Polarisation: bipolar
Produkt ist nicht verfügbar
BSZ097N04LSGATMA1 BSZ097N04LSGATMA1 INFINEON TECHNOLOGIES BSZ097N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
auf Bestellung 4954 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
145+ 0.49 EUR
154+ 0.47 EUR
2000+ 0.45 EUR
Mindestbestellmenge: 64
ICE3A1565FKLA1 ICE3A1565FKLA1 INFINEON TECHNOLOGIES ICE3A_B_ser.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 6.1A; 100kHz; Ch: 1; DIP8; flyback; 0÷72%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 6.1A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...72%
Power: 42/20W
Application: SMPS
Operating voltage: 8.5...21V DC
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.4 EUR
Mindestbestellmenge: 21
ICE3A2065ELJFKLA1 ICE3A2065ELJFKLA1 INFINEON TECHNOLOGIES ICE3A2065ELJ.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 10.3A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 57/28W
Application: SMPS
Operating voltage: 10.5...26V DC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.7 EUR
21+ 3.52 EUR
30+ 2.39 EUR
32+ 2.26 EUR
Mindestbestellmenge: 16
ICE3AR0680JZXKLA1
+1
 		ICE3AR0680JZXKLA1 INFINEON TECHNOLOGIES ICE3AR0680JZ.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 20A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...75%
Power: 82/52W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
SPA11N60C3XKSA1 INFINEON TECHNOLOGIES SPx11N60C3%20%28E8185%29.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
SPB11N60C3ATMA1 INFINEON TECHNOLOGIES SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
SPP11N60C3XKSA1 SPP11N60C3XKSA1 INFINEON TECHNOLOGIES SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.92 EUR
41+ 1.74 EUR
44+ 1.66 EUR
Mindestbestellmenge: 19
SPW35N60C3 SPW35N60C3 INFINEON TECHNOLOGIES SPW35N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.97 EUR
7+ 10.62 EUR
Mindestbestellmenge: 6
IRFP3306PBF IRFP3306PBF INFINEON TECHNOLOGIES irfp3306pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 220W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 376 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.43 EUR
26+ 2.76 EUR
48+ 1.52 EUR
50+ 1.43 EUR
Mindestbestellmenge: 21
IRFP4468PBF IRFP4468PBF INFINEON TECHNOLOGIES irfp4468pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.91 EUR
13+ 5.58 EUR
100+ 5.55 EUR
Mindestbestellmenge: 10
IRF7809AVTRPBF IRF7809AVTRPBF INFINEON TECHNOLOGIES irf7809avpbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.3A; 2.5W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 13.3A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: SO8
Produkt ist nicht verfügbar
IRFB4227PBF IRFB4227PBF INFINEON TECHNOLOGIES irfb4227pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Mounting: THT
Gate charge: 70nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 200V
Drain current: 65A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 190W
auf Bestellung 835 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.79 EUR
33+ 2.2 EUR
35+ 2.09 EUR
500+ 2.06 EUR
Mindestbestellmenge: 19
IRLML6402TRPBF IRLML6402TRPBF INFINEON TECHNOLOGIES IRLML6402TRPBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 6815 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
161+ 0.45 EUR
188+ 0.38 EUR
277+ 0.26 EUR
323+ 0.22 EUR
715+ 0.1 EUR
758+ 0.094 EUR
Mindestbestellmenge: 122
BSC100N03MSGATMA1 BSC100N03MSGATMA1 INFINEON TECHNOLOGIES BSC100N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 176A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRFZ44EPBF description irfz44e.pdf
IRFZ44EPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
56+1.29 EUR
66+ 1.1 EUR
97+ 0.74 EUR
103+ 0.7 EUR
Mindestbestellmenge: 56
IRFZ44ESTRLPBF irfz44espbf.pdf
IRFZ44ESTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFZ44VPBF irfz44v.pdf
IRFZ44VPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 55A; 115W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 55A
Power dissipation: 115W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 44.7nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
59+1.23 EUR
65+ 1.12 EUR
97+ 0.74 EUR
103+ 0.7 EUR
Mindestbestellmenge: 59
IRFZ44VZPBF IRFZ44VZPBF.pdf
IRFZ44VZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
7+10.21 EUR
Mindestbestellmenge: 7
IRFZ44VZSPBF irfz44vzpbf.pdf
IRFZ44VZSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 92W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 92W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
35+2.1 EUR
38+ 1.9 EUR
48+ 1.49 EUR
Mindestbestellmenge: 35
IRFZ44ZPBF description irfz44z.pdf
IRFZ44ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
89+ 0.81 EUR
117+ 0.61 EUR
123+ 0.58 EUR
Mindestbestellmenge: 76
IRFZ44ZSTRRPBF IRFZ44ZSTRRPBF.pdf
IRFZ44ZSTRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 36A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
AUIRFZ44VZS auirfz44vzs.pdf
AUIRFZ44VZS
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 57A; 92W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 57A
Power dissipation: 92W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRLR024NTRPBF description irlr024npbf.pdf
IRLR024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 38W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 16037 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
73+0.99 EUR
216+ 0.33 EUR
229+ 0.31 EUR
Mindestbestellmenge: 73
IRLML2030TRPBF irlml2030pbf.pdf
IRLML2030TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 7560 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
239+0.3 EUR
365+ 0.2 EUR
549+ 0.13 EUR
642+ 0.11 EUR
910+ 0.079 EUR
962+ 0.074 EUR
1000+ 0.073 EUR
3000+ 0.072 EUR
Mindestbestellmenge: 239
IRLML2060TRPBF irlml2060pbf.pdf
IRLML2060TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 1706 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
193+0.37 EUR
269+ 0.27 EUR
451+ 0.16 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 193
IRLML2246TRPBF irlml2246pbf.pdf
IRLML2246TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Kind of package: reel
Drain-source voltage: -20V
Drain current: -2.6A
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: SOT23
auf Bestellung 3040 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
139+0.51 EUR
221+ 0.32 EUR
286+ 0.25 EUR
477+ 0.15 EUR
820+ 0.087 EUR
878+ 0.082 EUR
Mindestbestellmenge: 139
IRLML2402TRPBF IRLML2402TRPBF.pdf
IRLML2402TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; 0.54W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Power dissipation: 0.54W
Case: SOT23
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Part status: Not recommended for new designs
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
134+0.53 EUR
Mindestbestellmenge: 134
IRLML2502TRPBF IRLML2502TRPBF.pdf
IRLML2502TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 6682 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
120+0.6 EUR
159+ 0.45 EUR
182+ 0.39 EUR
232+ 0.31 EUR
283+ 0.25 EUR
532+ 0.13 EUR
Mindestbestellmenge: 120
IRLML2803TRPBF irlml2803.pdf
IRLML2803TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 1471 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
162+0.44 EUR
222+ 0.32 EUR
257+ 0.28 EUR
360+ 0.2 EUR
414+ 0.17 EUR
589+ 0.12 EUR
625+ 0.11 EUR
Mindestbestellmenge: 162
IRF2807PBF irf2807.pdf
IRF2807PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 106.7nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 464 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
35+2.07 EUR
37+ 1.94 EUR
44+ 1.66 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 35
IRF2807STRLPBF irf2807spbf.pdf
IRF2807STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF2807STRRPBF irf2807spbf.pdf
IRF2807STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 82A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF2807ZPBF description irf2807z.pdf
IRF2807ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 89A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 89A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
41+1.76 EUR
65+ 1.1 EUR
70+ 1.02 EUR
Mindestbestellmenge: 41
IR21844PBF description IR21844SPBF.pdf
IR21844PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2.3...1.9A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+6.56 EUR
12+ 5.96 EUR
Mindestbestellmenge: 11
IR21844SPBF description IR21844SPBF.pdf
IR21844SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
16+4.7 EUR
31+ 2.37 EUR
32+ 2.25 EUR
Mindestbestellmenge: 16
IR21844STRPBF IR21844SPBF.pdf
IR21844STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
Produkt ist nicht verfügbar
IR2184PBF IR21844SPBF.pdf
IR2184PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
20+3.59 EUR
32+ 2.26 EUR
34+ 2.14 EUR
Mindestbestellmenge: 20
IR2184SPBF description IR21844SPBF.pdf
IR2184SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
19+3.96 EUR
20+ 3.58 EUR
27+ 2.73 EUR
28+ 2.59 EUR
Mindestbestellmenge: 19
IR2184STRPBF IR21844SPBF.pdf
IR2184STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 270ns
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 2641 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+4.2 EUR
19+ 3.93 EUR
35+ 2.1 EUR
36+ 1.99 EUR
Mindestbestellmenge: 18
BAT60AE6327HTSA1 BAT60AE6327-DTE.pdf
BAT60AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 10V; 3A; SOD323; 1.35W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Case: SOD323
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 3027 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
139+0.51 EUR
219+ 0.33 EUR
317+ 0.23 EUR
642+ 0.11 EUR
Mindestbestellmenge: 139
BAT60BE6327HTSA1 BAT60BE6327HTSA1.pdf
BAT60BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 10V; 3A; SOD323; 1.35W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Case: SOD323
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 4171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
148+0.49 EUR
197+ 0.36 EUR
300+ 0.24 EUR
650+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 148
IRFB260NPBF irfb260n.pdf
IRFB260NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 56A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 56A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
23+3.12 EUR
37+ 1.93 EUR
Mindestbestellmenge: 23
IRS21844SPBF irs2184.pdf
IRS21844SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Produkt ist nicht verfügbar
BTS452R BTS452R-DTE.pdf
BTS452R
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD
Case: PG-TO252-5-11
Supply voltage: 6...52V DC
On-state resistance: 0.2Ω
Output voltage: 62V
Output current: 1.8A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: Classic PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Produkt ist nicht verfügbar
BAV70SH6327XTSA1 BAV70E6327HTSA1.pdf
BAV70SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT363; 250mW; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.25W
Type of diode: switching
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: common cathode; double x2
auf Bestellung 2830 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
432+0.17 EUR
697+ 0.1 EUR
863+ 0.083 EUR
913+ 0.078 EUR
Mindestbestellmenge: 432
BAV99SH6327XTSA1 BAV99SH6327XTSA1.pdf
BAV99SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; SOT363; 250mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Semiconductor structure: double series x2
Features of semiconductor devices: ultrafast switching
Case: SOT363
Power dissipation: 0.25W
Kind of package: reel; tape
auf Bestellung 2979 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
218+0.33 EUR
290+ 0.25 EUR
360+ 0.2 EUR
506+ 0.14 EUR
878+ 0.082 EUR
926+ 0.077 EUR
Mindestbestellmenge: 218
IRS2092STRPBF IRS2092.pdf
IRS2092STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 800kHz; 10÷18VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Frequency: 800kHz
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 2324 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
15+4.86 EUR
17+ 4.35 EUR
29+ 2.53 EUR
30+ 2.4 EUR
Mindestbestellmenge: 15
IPI180N10N3GXKSA1 IPI180N10N3G-DTE.pdf
IPI180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhanced
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
45+1.6 EUR
52+ 1.39 EUR
75+ 0.96 EUR
80+ 0.9 EUR
Mindestbestellmenge: 45
IPP180N10N3GXKSA1 IPP180N10N3G-dte.pdf
IPP180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7413TRPBF description irf7413pbf.pdf
IRF7413TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRF7413ZTRPBF description irf7413zpbf.pdf
IRF7413ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 3775 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
87+0.83 EUR
101+ 0.71 EUR
219+ 0.33 EUR
232+ 0.31 EUR
Mindestbestellmenge: 87
IRS20752LTRPBF IRS20752ltrpbf.pdf
IRS20752LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Mounting: SMD
Supply voltage: 10...18V DC
Number of channels: 1
Case: SOT23-6
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -240...160mA
Topology: single transistor
Voltage class: 200V
Turn-on time: 225ns
Turn-off time: 255ns
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
79+0.92 EUR
88+ 0.82 EUR
95+ 0.76 EUR
114+ 0.63 EUR
122+ 0.59 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 79
IRFP064NPBF irfp064n.pdf
IRFP064NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 98A; 150W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 98A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
23+3.1 EUR
Mindestbestellmenge: 23
IRFP3206PBF irfp3206pbf.pdf
IRFP3206PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 280W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
24+3.07 EUR
37+ 1.94 EUR
39+ 1.84 EUR
Mindestbestellmenge: 24
IRLML5103TRPBF irlml5103pbf.pdf
IRLML5103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
IRF3415PBF irf3415.pdf
IRF3415PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 406 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
36+2 EUR
40+ 1.83 EUR
59+ 1.23 EUR
61+ 1.17 EUR
Mindestbestellmenge: 36
IRF3415STRLPBF irf3415spbf.pdf
IRF3415STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
IRFP150NPBF description irfp150n.pdf
IRFP150NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
31+2.33 EUR
38+ 1.89 EUR
40+ 1.79 EUR
Mindestbestellmenge: 31
IRFP054NPBF irfp054n.pdf
IRFP054NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 72A; 130W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 72A
Power dissipation: 130W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 86.7nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
22+3.33 EUR
29+ 2.49 EUR
31+ 2.35 EUR
50+ 2.32 EUR
Mindestbestellmenge: 22
BCP5216H6327XTSA1 BCP5216H6327XTSA1.pdf
BCP5216H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223
Mounting: SMD
Collector-emitter voltage: 60V
Case: SOT223
Collector current: 1A
Frequency: 125MHz
Type of transistor: PNP
Power dissipation: 2W
Polarisation: bipolar
Produkt ist nicht verfügbar
BSZ097N04LSGATMA1 BSZ097N04LSG-DTE.pdf
BSZ097N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TSDSON-8
auf Bestellung 4954 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
64+1.13 EUR
145+ 0.49 EUR
154+ 0.47 EUR
2000+ 0.45 EUR
Mindestbestellmenge: 64
ICE3A1565FKLA1 ICE3A_B_ser.pdf
ICE3A1565FKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 6.1A; 100kHz; Ch: 1; DIP8; flyback; 0÷72%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 6.1A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...72%
Power: 42/20W
Application: SMPS
Operating voltage: 8.5...21V DC
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
21+3.4 EUR
Mindestbestellmenge: 21
ICE3A2065ELJFKLA1 ICE3A2065ELJ.pdf
ICE3A2065ELJFKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 10.3A; 100kHz; Ch: 1; DIP8; flyback; 0÷75%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 10.3A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 57/28W
Application: SMPS
Operating voltage: 10.5...26V DC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
16+4.7 EUR
21+ 3.52 EUR
30+ 2.39 EUR
32+ 2.26 EUR
Mindestbestellmenge: 16
ICE3AR0680JZXKLA1 ICE3AR0680JZ.pdf
ICE3AR0680JZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20A; 100kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 20A
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...75%
Power: 82/52W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
SPA11N60C3XKSA1 SPx11N60C3%20%28E8185%29.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
SPB11N60C3ATMA1 SPB11N60C3_Rev+2+6.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42dde5d4908
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
SPP11N60C3XKSA1 SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3
SPP11N60C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
19+3.92 EUR
41+ 1.74 EUR
44+ 1.66 EUR
Mindestbestellmenge: 19
SPW35N60C3 SPW35N60C3.pdf
SPW35N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+12.97 EUR
7+ 10.62 EUR
Mindestbestellmenge: 6
IRFP3306PBF description irfp3306pbf.pdf
IRFP3306PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 220W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 220W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 376 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
21+3.43 EUR
26+ 2.76 EUR
48+ 1.52 EUR
50+ 1.43 EUR
Mindestbestellmenge: 21
IRFP4468PBF irfp4468pbf.pdf
IRFP4468PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10+7.91 EUR
13+ 5.58 EUR
100+ 5.55 EUR
Mindestbestellmenge: 10
IRF7809AVTRPBF description irf7809avpbf.pdf
IRF7809AVTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.3A; 2.5W; SO8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 13.3A
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: SO8
Produkt ist nicht verfügbar
IRFB4227PBF irfb4227pbf.pdf
IRFB4227PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Mounting: THT
Gate charge: 70nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 200V
Drain current: 65A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 190W
auf Bestellung 835 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
19+3.79 EUR
33+ 2.2 EUR
35+ 2.09 EUR
500+ 2.06 EUR
Mindestbestellmenge: 19
IRLML6402TRPBF IRLML6402TRPBF.pdf
IRLML6402TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 6815 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
122+0.59 EUR
161+ 0.45 EUR
188+ 0.38 EUR
277+ 0.26 EUR
323+ 0.22 EUR
715+ 0.1 EUR
758+ 0.094 EUR
Mindestbestellmenge: 122
BSC100N03MSGATMA1 BSC100N03MSG-DTE.pdf
BSC100N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 176A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 176A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 233 466 699 932 1165 1398 1631 1864 2097 2287 2288 2289 2290 2291 2292 2293 2294 2295 2296 2297 2330 2333  [ Nächste Seite >> ]