IRFZ44VZSPBF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 92W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 92W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 35+ | 2.1 EUR |
| 38+ | 1.9 EUR |
| 50+ | 1.43 EUR |
| 500+ | 1.36 EUR |
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Technische Details IRFZ44VZSPBF INFINEON TECHNOLOGIES
Description: MOSFET N-CH 60V 57A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V, Power Dissipation (Max): 92W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V.
Weitere Produktangebote IRFZ44VZSPBF nach Preis ab 1.31 EUR bis 4.42 EUR
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IRFZ44VZSPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 92W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Power dissipation: 92W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 43nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ44VZSPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 57A 3-Pin(2+Tab) D2PAK Tube |
auf Bestellung 3544 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ44VZSPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 57A 3-Pin(2+Tab) D2PAK Tube |
auf Bestellung 2118 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ44VZSPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 57A 3-Pin(2+Tab) D2PAK Tube |
auf Bestellung 2118 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ44VZSPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 60V 57A 12mOhm 43nC |
auf Bestellung 3885 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFZ44VZSPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 57A 3-Pin(2+Tab) D2PAK Tube |
auf Bestellung 3550 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ44VZSPBF Produktcode: 203092 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IRFZ44VZSPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 57A 3-Pin(2+Tab) D2PAK Tube |
Produkt ist nicht verfügbar |
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IRFZ44VZSPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 57A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V |
Produkt ist nicht verfügbar |