IRF2807STRRPBF Infineon Technologies
auf Bestellung 10400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 100+ | 1.51 EUR |
| 109+ | 1.35 EUR |
| 114+ | 1.24 EUR |
| 121+ | 1.12 EUR |
| 1000+ | 1.03 EUR |
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Technische Details IRF2807STRRPBF Infineon Technologies
Description: MOSFET N-CH 75V 82A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 82A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V.
Weitere Produktangebote IRF2807STRRPBF nach Preis ab 0.99 EUR bis 1.7 EUR
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IRF2807STRRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 75V 82A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 10400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF2807STRRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 75V 82A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF2807STRRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 82A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRF2807STRRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 82A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF2807STRRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 82A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 82A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |