Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (138838) > Seite 2295 nach 2314
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| IMZ120R350M1HXKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W Mounting: THT Drain-source voltage: 1.2kV Drain current: 4.7A On-state resistance: 662mΩ Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 13A Case: TO247-4 |
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1ED020I12F2XUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Technology: EiceDRIVER™ Case: PG-DSO-16-15 Mounting: SMD Kind of package: reel; tape Output current: -2...2A Topology: single transistor Number of channels: 1 Type of integrated circuit: driver Supply voltage: 0...28V; 4.5...5.5V Protection: undervoltage UVP Voltage class: 0.6/1.2kV Kind of integrated circuit: high-side; IGBT gate driver Integrated circuit features: active Miller clamp; galvanically isolated |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1ED020I12B2XUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Technology: EiceDRIVER™ Case: PG-DSO-16-15 Output current: -2...2A Number of channels: 1 Supply voltage: 0...28V; 4.5...5.5V Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
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| 1ED020I12FA2XUMA2 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Technology: EiceDRIVER™ Case: PG-DSO-20 Mounting: SMD Kind of package: reel; tape Output current: -2...2A Topology: single transistor Number of channels: 1 Type of integrated circuit: driver Supply voltage: 0...28V; 4.5...5.5V Protection: undervoltage UVP Voltage class: 0.6/1.2kV Kind of integrated circuit: high-side; IGBT gate driver Integrated circuit features: active Miller clamp; galvanically isolated |
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| 1ED020I12FXUMA2 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1 Technology: EiceDRIVER™ Case: PG-DSO-16-15 Mounting: SMD Kind of package: reel; tape Output current: -2...2A Topology: single transistor Number of channels: 1 Type of integrated circuit: driver Supply voltage: 0...28V; 4.5...5.5V Protection: undervoltage UVP Voltage class: 0.6/1.2kV Kind of integrated circuit: gate driver; high-side Integrated circuit features: active Miller clamp; galvanically isolated |
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2EDL05I06BFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver Type of integrated circuit: driver Topology: IGBT half-bridge Kind of integrated circuit: high-/low-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-8 Output current: -0.7...0.36A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 600V |
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| 2EDL05I06PJXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver Type of integrated circuit: driver Topology: IGBT half-bridge Kind of integrated circuit: high-/low-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-14 Output current: -0.7...0.36A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 600V |
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IAUT200N08S5N023ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8 Kind of package: reel; tape Polarisation: unipolar Power dissipation: 200W Gate charge: 36nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET On-state resistance: 2.3mΩ Drain current: 200A Drain-source voltage: 80V Case: PG-HSOF-8 Mounting: SMD |
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BFP640H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343 Type of transistor: NPN Technology: SiGe:C Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 4.1V Collector current: 50mA Power dissipation: 0.2W Case: SOT343 Current gain: 110...270 Mounting: SMD Kind of package: reel; tape Frequency: 42GHz |
auf Bestellung 2825 Stücke: Lieferzeit 14-21 Tag (e) |
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BFP760H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343 Mounting: SMD Case: SOT343 Kind of package: reel; tape Frequency: 45GHz Type of transistor: NPN Power dissipation: 0.24W Collector current: 70mA Polarisation: bipolar Current gain: 160...400 Technology: SiGe:C Collector-emitter voltage: 13V Kind of transistor: HBT; RF |
auf Bestellung 2375 Stücke: Lieferzeit 14-21 Tag (e) |
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| BCR402UE6433HTMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 20...65mA Number of channels: 1 Integrated circuit features: linear dimming Mounting: SMD Operating voltage: 1.4...40V |
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| BCR420UE6433HTMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 150...200mA Number of channels: 1 Integrated circuit features: linear dimming Mounting: SMD Operating voltage: 1.4...40V |
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IPP034N03LGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 94W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Power dissipation: 94W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| IAUA170N10S5N031AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W Case: PG-HSOF-5 Mounting: SMD On-state resistance: 4mΩ Kind of package: reel; tape Technology: OptiMOS™ 5 Polarisation: unipolar Gate charge: 88nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 519A Drain-source voltage: 100V Drain current: 22A Type of transistor: N-MOSFET Power dissipation: 197W |
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| FD300R06KE3HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; screw Mechanical mounting: screw Electrical mounting: screw Application: frequency changer; Inverter Type of module: IGBT Topology: boost chopper Case: AG-62MM-1 Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A |
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FD300R12KE3HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Mechanical mounting: screw Electrical mounting: screw Application: frequency changer; Inverter Power dissipation: 1.47kW Type of module: IGBT Topology: boost chopper Case: AG-62MM-1 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A |
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FF300R06KE3 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Mechanical mounting: screw Electrical mounting: screw Power dissipation: 940W Type of module: IGBT Topology: IGBT half-bridge Case: AG-62MM-1 Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A |
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FF300R12KE3 | INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Mechanical mounting: screw Electrical mounting: screw Power dissipation: 1.45kW Type of module: IGBT Topology: IGBT half-bridge Case: AG-62MM-1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A |
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FF300R12KT3EHOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Power dissipation: 1.45kW Type of module: IGBT Topology: IGBT x2 Case: AG-62MM-1 Max. off-state voltage: 1.2kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A |
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FF300R12KT4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Mechanical mounting: screw Electrical mounting: screw Power dissipation: 1.6kW Type of module: IGBT Topology: IGBT half-bridge Case: AG-62MM-1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A |
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| FF300R17ME4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: AG-ECONOD-3 Power dissipation: 1.8kW Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: EconoDUAL™ 3 Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A |
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F3L300R07PE4 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; AG-ECONO4-1 Mechanical mounting: screw Electrical mounting: Press-Fit; screw Power dissipation: 940W Type of module: IGBT Technology: EconoPACK™ 4 Topology: NTC thermistor; three-level inverter; single-phase Case: AG-ECONO4-1 Max. off-state voltage: 650V Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A |
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BSO211PHXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.6A Power dissipation: 1.6W Case: PG-DSO-8 Gate-source voltage: ±12V On-state resistance: 67mΩ Mounting: SMD Kind of channel: enhanced |
auf Bestellung 2453 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR2405TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFR2405TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFR2407TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 42A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFR2607ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK Mounting: SMD Polarisation: unipolar Kind of package: reel Case: DPAK Technology: HEXFET® Kind of channel: enhanced Drain current: 45A Type of transistor: N-MOSFET Power dissipation: 110W Drain-source voltage: 75V |
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IRF6645TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.7A Power dissipation: 42W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF6646TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET Case: DirectFET Mounting: SMD Kind of package: reel Power dissipation: 89W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 80V Drain current: 12A Type of transistor: N-MOSFET |
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IRF6655TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET Mounting: SMD Power dissipation: 42W Polarisation: unipolar Technology: HEXFET® Drain current: 4.2A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Kind of package: reel Case: DirectFET |
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IRF7606TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.8W; Micro8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Power dissipation: 1.8W Case: Micro8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF6712STRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 17A; 36W; DirectFET Mounting: SMD Kind of package: reel Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Case: DirectFET Drain-source voltage: 25V Drain current: 17A |
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IRF6714MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 166A; 89W; DirectFET Mounting: SMD Kind of package: reel Drain-source voltage: 25V Drain current: 166A Type of transistor: N-MOSFET Power dissipation: 89W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Case: DirectFET |
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| IPP019N08NF2SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W Case: PG-TO220-3 Mounting: THT Kind of package: tube Pulsed drain current: 764A Drain-source voltage: 80V Drain current: 147A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Gate charge: 124nC Technology: StrongIRFET™ 2 Kind of channel: enhanced Gate-source voltage: ±20V |
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IPP020N08N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 375W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP023NE7N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP027N08N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 214W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP029N06NAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 136W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP034N08N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 167W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP034NE7N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Drain-source voltage: 75V Drain current: 100A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 214W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP037N06L3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 167W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP039N04LGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Kind of package: tube Drain-source voltage: 40V Drain current: 80A On-state resistance: 3.9mΩ Type of transistor: N-MOSFET Power dissipation: 94W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP041N04NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Power dissipation: 94W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP041N12N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3 Mounting: THT Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 120A Kind of channel: enhanced Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 4.1mΩ Power dissipation: 300W |
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IPP042N03LGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 79W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 70A Power dissipation: 79W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP048N04NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 70A Power dissipation: 79W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPP048N12N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Kind of package: tube Drain-source voltage: 120V Drain current: 120A On-state resistance: 4.8mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP04CN10NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: THT Gate charge: 158nC Kind of package: tube Kind of channel: enhanced |
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IPP052N08N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 125W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 80A Power dissipation: 125W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IPP05CN10NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 400A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPP062NE7N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 136W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 136W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPD12CN10NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3 Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar On-state resistance: 12.4mΩ Drain-source voltage: 100V Drain current: 67A Case: PG-TO252-3 Power dissipation: 125W Mounting: SMD Type of transistor: N-MOSFET |
auf Bestellung 2143 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25CN10NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 140A; 71W Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 140A Power dissipation: 71W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPD78CN10NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 31W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Power dissipation: 31W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 78mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPP120N20NFDAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ FD Polarisation: unipolar Drain-source voltage: 200V Drain current: 84A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD70R600P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 5A; 43.1W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 5A Power dissipation: 43.1W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPD90N04S304ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W Polarisation: unipolar Power dissipation: 136W Type of transistor: N-MOSFET On-state resistance: 3.6mΩ Drain current: 90A Gate charge: 60nC Drain-source voltage: 40V Technology: OptiMOS™ T Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO252-3 Mounting: SMD |
Produkt ist nicht verfügbar |
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IPD90N04S404ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A Polarisation: unipolar Kind of package: reel Power dissipation: 71W Type of transistor: N-MOSFET On-state resistance: 4.1mΩ Drain current: 81A Gate charge: 20nC Drain-source voltage: 40V Technology: OptiMOS™ T2 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO252-3-313 Pulsed drain current: 360A Mounting: SMD |
auf Bestellung 2433 Stücke: Lieferzeit 14-21 Tag (e) |
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IKQ50N120CH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 173W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 235nC Kind of package: tube Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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IKQ50N120CT2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 200A Type of transistor: IGBT Power dissipation: 151W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 235nC Technology: TRENCHSTOP™ 2 Kind of package: tube Mounting: THT Case: TO247-3 |
Produkt ist nicht verfügbar |
| IMZ120R350M1HXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 4.7A
On-state resistance: 662mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 13A
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 4.7A
On-state resistance: 662mΩ
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 13A
Case: TO247-4
Produkt ist nicht verfügbar
| 1ED020I12F2XUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Number of channels: 1
Type of integrated circuit: driver
Supply voltage: 0...28V; 4.5...5.5V
Protection: undervoltage UVP
Voltage class: 0.6/1.2kV
Kind of integrated circuit: high-side; IGBT gate driver
Integrated circuit features: active Miller clamp; galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Number of channels: 1
Type of integrated circuit: driver
Supply voltage: 0...28V; 4.5...5.5V
Protection: undervoltage UVP
Voltage class: 0.6/1.2kV
Kind of integrated circuit: high-side; IGBT gate driver
Integrated circuit features: active Miller clamp; galvanically isolated
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 4.9 EUR |
| 17+ | 4.25 EUR |
| 18+ | 4 EUR |
| 25+ | 3.9 EUR |
| 100+ | 3.86 EUR |
| 1ED020I12B2XUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
| 1ED020I12FA2XUMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Technology: EiceDRIVER™
Case: PG-DSO-20
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Number of channels: 1
Type of integrated circuit: driver
Supply voltage: 0...28V; 4.5...5.5V
Protection: undervoltage UVP
Voltage class: 0.6/1.2kV
Kind of integrated circuit: high-side; IGBT gate driver
Integrated circuit features: active Miller clamp; galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Technology: EiceDRIVER™
Case: PG-DSO-20
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Number of channels: 1
Type of integrated circuit: driver
Supply voltage: 0...28V; 4.5...5.5V
Protection: undervoltage UVP
Voltage class: 0.6/1.2kV
Kind of integrated circuit: high-side; IGBT gate driver
Integrated circuit features: active Miller clamp; galvanically isolated
Produkt ist nicht verfügbar
| 1ED020I12FXUMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Number of channels: 1
Type of integrated circuit: driver
Supply voltage: 0...28V; 4.5...5.5V
Protection: undervoltage UVP
Voltage class: 0.6/1.2kV
Kind of integrated circuit: gate driver; high-side
Integrated circuit features: active Miller clamp; galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Number of channels: 1
Type of integrated circuit: driver
Supply voltage: 0...28V; 4.5...5.5V
Protection: undervoltage UVP
Voltage class: 0.6/1.2kV
Kind of integrated circuit: gate driver; high-side
Integrated circuit features: active Miller clamp; galvanically isolated
Produkt ist nicht verfügbar
| 2EDL05I06BFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Produkt ist nicht verfügbar
| 2EDL05I06PJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Produkt ist nicht verfügbar
| IAUT200N08S5N023ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 200W
Gate charge: 36nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
On-state resistance: 2.3mΩ
Drain current: 200A
Drain-source voltage: 80V
Case: PG-HSOF-8
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Kind of package: reel; tape
Polarisation: unipolar
Power dissipation: 200W
Gate charge: 36nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
On-state resistance: 2.3mΩ
Drain current: 200A
Drain-source voltage: 80V
Case: PG-HSOF-8
Mounting: SMD
Produkt ist nicht verfügbar
| BFP640H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.1V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT343
Current gain: 110...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.1V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT343
Current gain: 110...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
auf Bestellung 2825 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 114+ | 0.63 EUR |
| 145+ | 0.49 EUR |
| 182+ | 0.39 EUR |
| 244+ | 0.29 EUR |
| 258+ | 0.28 EUR |
| BFP760H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 45GHz
Type of transistor: NPN
Power dissipation: 0.24W
Collector current: 70mA
Polarisation: bipolar
Current gain: 160...400
Technology: SiGe:C
Collector-emitter voltage: 13V
Kind of transistor: HBT; RF
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 45GHz
Type of transistor: NPN
Power dissipation: 0.24W
Collector current: 70mA
Polarisation: bipolar
Current gain: 160...400
Technology: SiGe:C
Collector-emitter voltage: 13V
Kind of transistor: HBT; RF
auf Bestellung 2375 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 0.49 EUR |
| 176+ | 0.41 EUR |
| 196+ | 0.37 EUR |
| 233+ | 0.31 EUR |
| 246+ | 0.29 EUR |
| 500+ | 0.28 EUR |
| BCR402UE6433HTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 20...65mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 20...65mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V
Produkt ist nicht verfügbar
| BCR420UE6433HTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V
Produkt ist nicht verfügbar
| IPP034N03LGXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IAUA170N10S5N031AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W
Case: PG-HSOF-5
Mounting: SMD
On-state resistance: 4mΩ
Kind of package: reel; tape
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 88nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 519A
Drain-source voltage: 100V
Drain current: 22A
Type of transistor: N-MOSFET
Power dissipation: 197W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W
Case: PG-HSOF-5
Mounting: SMD
On-state resistance: 4mΩ
Kind of package: reel; tape
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 88nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 519A
Drain-source voltage: 100V
Drain current: 22A
Type of transistor: N-MOSFET
Power dissipation: 197W
Produkt ist nicht verfügbar
| FD300R06KE3HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; screw
Mechanical mounting: screw
Electrical mounting: screw
Application: frequency changer; Inverter
Type of module: IGBT
Topology: boost chopper
Case: AG-62MM-1
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; screw
Mechanical mounting: screw
Electrical mounting: screw
Application: frequency changer; Inverter
Type of module: IGBT
Topology: boost chopper
Case: AG-62MM-1
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Produkt ist nicht verfügbar
| FD300R12KE3HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Mechanical mounting: screw
Electrical mounting: screw
Application: frequency changer; Inverter
Power dissipation: 1.47kW
Type of module: IGBT
Topology: boost chopper
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Mechanical mounting: screw
Electrical mounting: screw
Application: frequency changer; Inverter
Power dissipation: 1.47kW
Type of module: IGBT
Topology: boost chopper
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Produkt ist nicht verfügbar
| FF300R06KE3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Mechanical mounting: screw
Electrical mounting: screw
Power dissipation: 940W
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Mechanical mounting: screw
Electrical mounting: screw
Power dissipation: 940W
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Produkt ist nicht verfügbar
| FF300R12KE3 | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Mechanical mounting: screw
Electrical mounting: screw
Power dissipation: 1.45kW
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Mechanical mounting: screw
Electrical mounting: screw
Power dissipation: 1.45kW
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Produkt ist nicht verfügbar
| FF300R12KT3EHOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Power dissipation: 1.45kW
Type of module: IGBT
Topology: IGBT x2
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Power dissipation: 1.45kW
Type of module: IGBT
Topology: IGBT x2
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Produkt ist nicht verfügbar
| FF300R12KT4HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Mechanical mounting: screw
Electrical mounting: screw
Power dissipation: 1.6kW
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Mechanical mounting: screw
Electrical mounting: screw
Power dissipation: 1.6kW
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Produkt ist nicht verfügbar
| FF300R17ME4BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: AG-ECONOD-3
Power dissipation: 1.8kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: AG-ECONOD-3
Power dissipation: 1.8kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoDUAL™ 3
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Produkt ist nicht verfügbar
| F3L300R07PE4 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; AG-ECONO4-1
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Power dissipation: 940W
Type of module: IGBT
Technology: EconoPACK™ 4
Topology: NTC thermistor; three-level inverter; single-phase
Case: AG-ECONO4-1
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; AG-ECONO4-1
Mechanical mounting: screw
Electrical mounting: Press-Fit; screw
Power dissipation: 940W
Type of module: IGBT
Technology: EconoPACK™ 4
Topology: NTC thermistor; three-level inverter; single-phase
Case: AG-ECONO4-1
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Produkt ist nicht verfügbar
| BSO211PHXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 2453 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 190+ | 0.38 EUR |
| 197+ | 0.36 EUR |
| IRFR2405TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR2405TRPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR2407TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR2607ZTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK
Mounting: SMD
Polarisation: unipolar
Kind of package: reel
Case: DPAK
Technology: HEXFET®
Kind of channel: enhanced
Drain current: 45A
Type of transistor: N-MOSFET
Power dissipation: 110W
Drain-source voltage: 75V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK
Mounting: SMD
Polarisation: unipolar
Kind of package: reel
Case: DPAK
Technology: HEXFET®
Kind of channel: enhanced
Drain current: 45A
Type of transistor: N-MOSFET
Power dissipation: 110W
Drain-source voltage: 75V
Produkt ist nicht verfügbar
| IRF6645TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF6646TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Case: DirectFET
Mounting: SMD
Kind of package: reel
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 80V
Drain current: 12A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Case: DirectFET
Mounting: SMD
Kind of package: reel
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 80V
Drain current: 12A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IRF6655TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET
Mounting: SMD
Power dissipation: 42W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 4.2A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DirectFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET
Mounting: SMD
Power dissipation: 42W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 4.2A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DirectFET
Produkt ist nicht verfügbar
| IRF7606TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.8W; Micro8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.8W
Case: Micro8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.8W; Micro8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.8W
Case: Micro8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF6712STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 17A; 36W; DirectFET
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Case: DirectFET
Drain-source voltage: 25V
Drain current: 17A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 17A; 36W; DirectFET
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Case: DirectFET
Drain-source voltage: 25V
Drain current: 17A
Produkt ist nicht verfügbar
| IRF6714MTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 166A; 89W; DirectFET
Mounting: SMD
Kind of package: reel
Drain-source voltage: 25V
Drain current: 166A
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Case: DirectFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 166A; 89W; DirectFET
Mounting: SMD
Kind of package: reel
Drain-source voltage: 25V
Drain current: 166A
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Case: DirectFET
Produkt ist nicht verfügbar
| IPP019N08NF2SAKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Pulsed drain current: 764A
Drain-source voltage: 80V
Drain current: 147A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 124nC
Technology: StrongIRFET™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 147A; Idm: 764A; 250W
Case: PG-TO220-3
Mounting: THT
Kind of package: tube
Pulsed drain current: 764A
Drain-source voltage: 80V
Drain current: 147A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 124nC
Technology: StrongIRFET™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| IPP020N08N5AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 9.75 EUR |
| 11+ | 6.51 EUR |
| IPP023NE7N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP027N08N5AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP029N06NAKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP034N08N5AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP034NE7N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 214W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain-source voltage: 75V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 214W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 3.86 EUR |
| 22+ | 3.4 EUR |
| 25+ | 2.95 EUR |
| 26+ | 2.79 EUR |
| IPP037N06L3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP039N04LGXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 40V
Drain current: 80A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 4.46 EUR |
| IPP041N04NGXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP041N12N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.1mΩ
Power dissipation: 300W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.1mΩ
Power dissipation: 300W
Produkt ist nicht verfügbar
| IPP042N03LGXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 49+ | 1.49 EUR |
| 51+ | 1.4 EUR |
| IPP048N04NGXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP048N12N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: 120V
Drain current: 120A
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 3.49 EUR |
| 23+ | 3.23 EUR |
| 27+ | 2.67 EUR |
| 29+ | 2.53 EUR |
| IPP04CN10NGXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP052N08N5AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 125W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 125W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP05CN10NGXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 400A; 300W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP062NE7N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPD12CN10NGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 12.4mΩ
Drain-source voltage: 100V
Drain current: 67A
Case: PG-TO252-3
Power dissipation: 125W
Mounting: SMD
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 12.4mΩ
Drain-source voltage: 100V
Drain current: 67A
Case: PG-TO252-3
Power dissipation: 125W
Mounting: SMD
Type of transistor: N-MOSFET
auf Bestellung 2143 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 1.9 EUR |
| 44+ | 1.63 EUR |
| 57+ | 1.27 EUR |
| 60+ | 1.2 EUR |
| 500+ | 1.17 EUR |
| IPD25CN10NGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 140A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 140A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPD78CN10NGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP120N20NFDAKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 8.05 EUR |
| 14+ | 5.22 EUR |
| 15+ | 4.92 EUR |
| IPD70R600P7SAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; 43.1W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Power dissipation: 43.1W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 5A; 43.1W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5A
Power dissipation: 43.1W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPD90N04S304ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Polarisation: unipolar
Power dissipation: 136W
Type of transistor: N-MOSFET
On-state resistance: 3.6mΩ
Drain current: 90A
Gate charge: 60nC
Drain-source voltage: 40V
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Polarisation: unipolar
Power dissipation: 136W
Type of transistor: N-MOSFET
On-state resistance: 3.6mΩ
Drain current: 90A
Gate charge: 60nC
Drain-source voltage: 40V
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
Produkt ist nicht verfügbar
| IPD90N04S404ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Polarisation: unipolar
Kind of package: reel
Power dissipation: 71W
Type of transistor: N-MOSFET
On-state resistance: 4.1mΩ
Drain current: 81A
Gate charge: 20nC
Drain-source voltage: 40V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3-313
Pulsed drain current: 360A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Polarisation: unipolar
Kind of package: reel
Power dissipation: 71W
Type of transistor: N-MOSFET
On-state resistance: 4.1mΩ
Drain current: 81A
Gate charge: 20nC
Drain-source voltage: 40V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3-313
Pulsed drain current: 360A
Mounting: SMD
auf Bestellung 2433 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 47+ | 1.53 EUR |
| 52+ | 1.39 EUR |
| 68+ | 1.06 EUR |
| 72+ | 1 EUR |
| IKQ50N120CH3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 173W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| IKQ50N120CT2XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Type of transistor: IGBT
Power dissipation: 151W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 235nC
Technology: TRENCHSTOP™ 2
Kind of package: tube
Mounting: THT
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Type of transistor: IGBT
Power dissipation: 151W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 235nC
Technology: TRENCHSTOP™ 2
Kind of package: tube
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar