BSO211PHXUMA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Power dissipation: 1.6W
Polarisation: unipolar
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: PG-DSO-8
Drain-source voltage: -20V
Drain current: -4.6A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2428 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 190+ | 0.38 EUR |
| 197+ | 0.36 EUR |
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Technische Details BSO211PHXUMA1 INFINEON TECHNOLOGIES
Description: MOSFET 2P-CH 20V 4A 8DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V, Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 25µA, Supplier Device Package: PG-DSO-8, Part Status: Obsolete.
Weitere Produktangebote BSO211PHXUMA1 nach Preis ab 0.36 EUR bis 0.55 EUR
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BSO211PHXUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8 Power dissipation: 1.6W Polarisation: unipolar Technology: OptiMOS™ P Kind of channel: enhanced Gate-source voltage: ±12V Mounting: SMD Case: PG-DSO-8 Drain-source voltage: -20V Drain current: -4.6A On-state resistance: 67mΩ Type of transistor: P-MOSFET |
auf Bestellung 2428 Stücke: Lieferzeit 14-21 Tag (e) |
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BSO211PHXUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2P-CH 20V 4A 8DSO Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 25µA Supplier Device Package: PG-DSO-8 |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSO211PHXUMA1 | Hersteller : Infineon Technologies |
MOSFET SMALL SIGNAL N-CH |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BSO211PHXUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2P-CH 20V 4A 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 25µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete |
Produkt ist nicht verfügbar |