Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (138831) > Seite 2300 nach 2314
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TLD21313EPXUMA1 | INFINEON TECHNOLOGIES |
 Category: LED driversDescription: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; 80mA Mounting: SMD Number of channels: 3 Output current: 80mA Type of integrated circuit: driver Operating voltage: 5.5...40V Case: PG-SSOP-14-EP Integrated circuit features: linear dimming; PWM Protection: overheating OTP Technology: Litix™ Kind of integrated circuit: high-side; LED controller |
Produkt ist nicht verfügbar |
|||||||||||
|
|
TLD21321EPXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 1 Mounting: SMD Number of channels: 1 Output current: 240mA Type of integrated circuit: driver Operating voltage: 5.5...40V Case: PG-SSOP-14-EP Integrated circuit features: linear dimming; PWM Protection: overheating OTP Technology: Litix™ Kind of integrated circuit: high-side; LED controller |
Produkt ist nicht verfügbar |
|||||||||||
 |
IRGP4650D-EPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 76A; 268W; TO247-3; single transistor Collector-emitter voltage: 600V Power dissipation: 268W Features of semiconductor devices: integrated anti-parallel diode Type of transistor: IGBT Kind of package: tube Semiconductor structure: single transistor Case: TO247-3 Collector current: 76A Mounting: THT |
Produkt ist nicht verfügbar |
|||||||||||
| TT190N16SOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 190A; BG-PB34SB-1; screw Max. forward impulse current: 5.2kA Case: BG-PB34SB-1 Max. off-state voltage: 1.6kV Max. forward voltage: 1.52V Load current: 190A Semiconductor structure: double series Gate current: 145mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: thyristor |
Produkt ist nicht verfügbar |
||||||||||||
 |
BCX6816H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 1A; 3W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 3W Case: SOT89 Mounting: SMD Frequency: 100MHz |
Produkt ist nicht verfügbar |
|||||||||||
 |
IRFSL4310ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262 Technology: HEXFET® Mounting: THT Case: TO262 Kind of package: tube Drain-source voltage: 100V Drain current: 127A Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
 |
XMC4200F64F256ABXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC Supply voltage: 3.3V DC Operating temperature: -40...85°C Number of A/D channels: 9 Kind of architecture: Cortex M4 Family: XMC4200 Memory: 40kB SRAM; 256kB FLASH Case: PG-LQFP-64 Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 35 Integrated circuit features: clock gaiting; DSP; RTC; watchdog |
Produkt ist nicht verfügbar |
|||||||||||
|
|
XMC4200F64K256ABXQSA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC Supply voltage: 3.3V DC Operating temperature: -40...125°C Number of A/D channels: 9 Kind of architecture: Cortex M4 Family: XMC4200 Memory: 40kB SRAM; 256kB FLASH Case: PG-LQFP-64 Type of integrated circuit: ARM microcontroller Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB Number of inputs/outputs: 35 Integrated circuit features: clock gaiting; DSP; RTC; watchdog |
Produkt ist nicht verfügbar |
|||||||||||
 |
TT500N14KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 500A Case: BG-PB60AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 17kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
|||||||||||
| FP50R12KT3BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: AG-ECONO3-3 Application: frequency changer; Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 280W Technology: EconoPIM™ 2 Mechanical mounting: screw |
Produkt ist nicht verfügbar |
||||||||||||
| FP50R12KT4B11BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A Case: AG-ECONO2-4 Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 50A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 280W Technology: EconoPIM™ 2 Mechanical mounting: screw Pulsed collector current: 100A |
Produkt ist nicht verfügbar |
||||||||||||
 |
FF200R12KE3HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.05kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: AG-62MM-1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
|||||||||||
|
|
FF200R12KE4PHOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: AG-62MM-1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
|||||||||||
|
|
FF200R12KT3EHOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.05kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT x2 Case: AG-62MM-1 Max. off-state voltage: 1.2kV Semiconductor structure: common emitter; transistor/transistor |
Produkt ist nicht verfügbar |
|||||||||||
|
|
FF200R12KT4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.1kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: AG-62MM-1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| FZ400R12KS4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM Type of module: IGBT Semiconductor structure: single transistor Case: AG-62MM Electrical mounting: screw Power dissipation: 2.5kW Mechanical mounting: screw Collector current: 400A Gate-emitter voltage: ±20V Pulsed collector current: 800A Max. off-state voltage: 1.2kV |
Produkt ist nicht verfügbar |
||||||||||||
 |
FZ600R12KE3HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 600A Case: AG-62MM Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Power dissipation: 2.8kW Mechanical mounting: screw |
Produkt ist nicht verfügbar |
|||||||||||
| FZ900R12KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES Case: AG-62MMES Power dissipation: 4.3kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA |
Produkt ist nicht verfügbar |
||||||||||||
 |
ISP742RI | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 Supply voltage: 5...34V DC Technology: Industrial PROFET |
auf Bestellung 1434 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| BCR321UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 0.25A Number of channels: 1 Mounting: SMD Operating voltage: 0...4.5V |
Produkt ist nicht verfügbar |
||||||||||||
 |
BTT60302EKAXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; PROFET™+ 24V Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-DSO-14-40 EP On-state resistance: 62mΩ Supply voltage: 5...36V DC Technology: PROFET™+ 24V |
Produkt ist nicht verfügbar |
|||||||||||
 |
IPB117N20NFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ FD Polarisation: unipolar Drain-source voltage: 200V Drain current: 84A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 11.7mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IPB65R190CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 17.5A Power dissipation: 151W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
 |
IPL65R165CFDAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 21.3A Power dissipation: 195W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IPL65R210CFDAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16.6A; 151W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 16.6A Power dissipation: 151W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IPL65R340CFDAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.9A; 104.2W; PG-VSON-4 Mounting: SMD Drain current: 10.9A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-VSON-4 On-state resistance: 0.34Ω Power dissipation: 104.2W Polarisation: unipolar Technology: CoolMOS™ |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IPL65R460CFDAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.3A Power dissipation: 83.3W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.46Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
 |
FF45MR12W1M1B11BOMA1 | INFINEON TECHNOLOGIES |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A Case: AG-EASY1BM-2 Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-Fit Polarisation: unipolar On-state resistance: 45mΩ Pulsed drain current: 50A Technology: CoolSiC™; SiC Gate-source voltage: -10...20V Mechanical mounting: screw |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
IPA083N10N5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 44A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
IPP083N10N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 73A Power dissipation: 100W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IPA083N10NM5SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 200A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 479 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
TLE9250SJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 4.5...5.5V DC Case: PG-DSO-8 Interface: CAN-FD Mounting: SMD Operating temperature: -40...150°C Number of receivers: 1 Number of transmitters: 1 Kind of package: reel; tape DC supply current: 60mA |
Produkt ist nicht verfügbar |
|||||||||||
|
|
TLE9250XSJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuits Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 3...5.5V DC; 4.5...5.5V DC Case: PG-DSO-8 Interface: CAN-FD Mounting: SMD Operating temperature: -40...150°C Number of receivers: 1 Number of transmitters: 1 Kind of package: reel; tape DC supply current: 60mA |
Produkt ist nicht verfügbar |
|||||||||||
 |
BFR360FH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3 Collector current: 35mA Type of transistor: NPN Power dissipation: 0.21W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: RF Mounting: SMD Case: TSFP-3 Frequency: 14GHz Collector-emitter voltage: 6V Current gain: 90...160 |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
IPT029N08N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W Case: PG-HSOF-8 Mounting: SMD Kind of package: tape Pulsed drain current: 676A Drain-source voltage: 80V Drain current: 120A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Gate charge: 70nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IPA80R750P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 489 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
IPA95R750P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP Mounting: THT Drain-source voltage: 950V Drain current: 5.5A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 28W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate Gate charge: 23nC Technology: CoolMOS™ P7 Case: TO220FP Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
|||||||||||
 |
IPD80R750P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Power dissipation: 51W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IPD95R750P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK Mounting: SMD Drain-source voltage: 950V Drain current: 5.5A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 73W Polarisation: unipolar Kind of package: reel Features of semiconductor devices: ESD protected gate Gate charge: 23nC Technology: CoolMOS™ P7 Case: DPAK Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IPP60R750E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 48W; PG-TO220-3 Mounting: THT Power dissipation: 48W Polarisation: unipolar Technology: CoolMOS™ E6 Drain current: 5.7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 0.75Ω |
Produkt ist nicht verfügbar |
|||||||||||
 |
IPP80R750P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Power dissipation: 51W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
|||||||||||
 |
IPU80R750P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Power dissipation: 51W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IPAN70R750P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Technology: CoolMOS™ P7 Drain-source voltage: 700V Drain current: 4A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 20.8W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 8.3nC Kind of channel: enhanced Gate-source voltage: ±16V |
auf Bestellung 244 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| IAUC64N08S5L075ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 13A Pulsed drain current: 256A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 11.1mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
 |
BAS7004SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT363; 250mW Mounting: SMD Case: SOT363 Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double series x2 Max. forward impulse current: 0.1A Power dissipation: 0.25W Type of diode: Schottky switching |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IPP60R022S7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A Mounting: THT Polarisation: unipolar Technology: CoolMOS™ S7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 375A Case: TO220 Drain-source voltage: 600V Drain current: 23A On-state resistance: 47mΩ Type of transistor: N-MOSFET Power dissipation: 390W |
Produkt ist nicht verfügbar |
|||||||||||
 |
BAS7006WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common anode; double Case: SOT323 Max. forward impulse current: 0.1A Power dissipation: 0.25W |
auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
FF200R17KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.25kW Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: AG-62MM-1 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
| FS150R17PE4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: AG-ECONO4-1 Electrical mounting: Press-Fit; screw Mechanical mounting: screw Type of module: IGBT Technology: EconoPACK™ 4 Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A |
Produkt ist nicht verfügbar |
||||||||||||
| TT162N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 162A; BG-PB34AT-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 162A Case: BG-PB34AT-1 Max. forward voltage: 1.41V Max. forward impulse current: 4.4kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
||||||||||||
 |
1EDN7550BXTSA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™ Kind of package: reel; tape Technology: EiceDRIVER™ Kind of integrated circuit: gate driver; low-side Topology: single transistor Voltage class: 80V Mounting: SMD Case: PG-SOT23-6 Supply voltage: 4.5...20V Output current: -8...4A Type of integrated circuit: driver Number of channels: 1 |
auf Bestellung 1545 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
BSC082N10LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 8.2mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
|
|
IPL60R180P6AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 22.4A Power dissipation: 176W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
| IPP60R180P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 53A Power dissipation: 72W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
||||||||||||
|
|
IPL60R104C7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 122W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 42nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
 |
IPB016N06L3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 180A On-state resistance: 1.6mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar |
Produkt ist nicht verfügbar |
|||||||||||
 |
IRF6727MTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 180A Power dissipation: 89W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
| FP25R12W1T7B11BPSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 25A Case: AG-EASY1B-2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 50A Technology: EasyPIM™ 1B Mechanical mounting: screw |
Produkt ist nicht verfügbar |
||||||||||||
 |
PVI1050NSPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 2.5kV Case: Gull wing 8 Turn-on time: 0.3ms Turn-off time: 220µs Manufacturer series: PVI-NPbF |
Produkt ist nicht verfügbar |
|||||||||||
|
|
BSC030N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
| TLD21313EPXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; 80mA
Mounting: SMD
Number of channels: 3
Output current: 80mA
Type of integrated circuit: driver
Operating voltage: 5.5...40V
Case: PG-SSOP-14-EP
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: high-side; LED controller
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; 80mA
Mounting: SMD
Number of channels: 3
Output current: 80mA
Type of integrated circuit: driver
Operating voltage: 5.5...40V
Case: PG-SSOP-14-EP
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: high-side; LED controller
Produkt ist nicht verfügbar
| TLD21321EPXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 1
Mounting: SMD
Number of channels: 1
Output current: 240mA
Type of integrated circuit: driver
Operating voltage: 5.5...40V
Case: PG-SSOP-14-EP
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: high-side; LED controller
Category: LED drivers
Description: IC: driver; high-side,LED controller; Litix™; PG-SSOP-14-EP; Ch: 1
Mounting: SMD
Number of channels: 1
Output current: 240mA
Type of integrated circuit: driver
Operating voltage: 5.5...40V
Case: PG-SSOP-14-EP
Integrated circuit features: linear dimming; PWM
Protection: overheating OTP
Technology: Litix™
Kind of integrated circuit: high-side; LED controller
Produkt ist nicht verfügbar
| IRGP4650D-EPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 76A; 268W; TO247-3; single transistor
Collector-emitter voltage: 600V
Power dissipation: 268W
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Kind of package: tube
Semiconductor structure: single transistor
Case: TO247-3
Collector current: 76A
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 76A; 268W; TO247-3; single transistor
Collector-emitter voltage: 600V
Power dissipation: 268W
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Kind of package: tube
Semiconductor structure: single transistor
Case: TO247-3
Collector current: 76A
Mounting: THT
Produkt ist nicht verfügbar
| TT190N16SOFHPSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 190A; BG-PB34SB-1; screw
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.52V
Load current: 190A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 190A; BG-PB34SB-1; screw
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.52V
Load current: 190A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Produkt ist nicht verfügbar
| BCX6816H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 3W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 3W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
| IRFSL4310ZPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Technology: HEXFET®
Mounting: THT
Case: TO262
Kind of package: tube
Drain-source voltage: 100V
Drain current: 127A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Technology: HEXFET®
Mounting: THT
Case: TO262
Kind of package: tube
Drain-source voltage: 100V
Drain current: 127A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar
| XMC4200F64F256ABXQMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4200
Memory: 40kB SRAM; 256kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4200
Memory: 40kB SRAM; 256kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Produkt ist nicht verfügbar
| XMC4200F64K256ABXQSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4200
Memory: 40kB SRAM; 256kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4200
Memory: 40kB SRAM; 256kB FLASH
Case: PG-LQFP-64
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Produkt ist nicht verfügbar
| TT500N14KOFHPSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| FP50R12KT3BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: AG-ECONO3-3
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 280W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: AG-ECONO3-3
Application: frequency changer; Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 280W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
| FP50R12KT4B11BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Case: AG-ECONO2-4
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 280W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Pulsed collector current: 100A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 50A
Case: AG-ECONO2-4
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 280W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Pulsed collector current: 100A
Produkt ist nicht verfügbar
| FF200R12KE3HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
| FF200R12KE4PHOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
| FF200R12KT3EHOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT x2
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT x2
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Produkt ist nicht verfügbar
| FF200R12KT4HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.1kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.1kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 192.31 EUR |
| FZ400R12KS4HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Case: AG-62MM
Electrical mounting: screw
Power dissipation: 2.5kW
Mechanical mounting: screw
Collector current: 400A
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Case: AG-62MM
Electrical mounting: screw
Power dissipation: 2.5kW
Mechanical mounting: screw
Collector current: 400A
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
| FZ600R12KE3HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: AG-62MM
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 600A
Case: AG-62MM
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
Mechanical mounting: screw
Produkt ist nicht verfügbar
| FZ900R12KE4HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Case: AG-62MMES
Power dissipation: 4.3kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Case: AG-62MMES
Power dissipation: 4.3kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Produkt ist nicht verfügbar
| ISP742RI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
Supply voltage: 5...34V DC
Technology: Industrial PROFET
auf Bestellung 1434 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 43+ | 1.69 EUR |
| 48+ | 1.52 EUR |
| 51+ | 1.42 EUR |
| 100+ | 1.37 EUR |
| BCR321UE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...4.5V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...4.5V
Produkt ist nicht verfügbar
| BTT60302EKAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; PROFET™+ 24V
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14-40 EP
On-state resistance: 62mΩ
Supply voltage: 5...36V DC
Technology: PROFET™+ 24V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; PROFET™+ 24V
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14-40 EP
On-state resistance: 62mΩ
Supply voltage: 5...36V DC
Technology: PROFET™+ 24V
Produkt ist nicht verfügbar
| IPB117N20NFDATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ FD
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPB65R190CFDATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPL65R165CFDAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.3A
Power dissipation: 195W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.3A
Power dissipation: 195W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPL65R210CFDAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.6A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.6A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.6A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.6A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPL65R340CFDAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.9A; 104.2W; PG-VSON-4
Mounting: SMD
Drain current: 10.9A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-VSON-4
On-state resistance: 0.34Ω
Power dissipation: 104.2W
Polarisation: unipolar
Technology: CoolMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.9A; 104.2W; PG-VSON-4
Mounting: SMD
Drain current: 10.9A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-VSON-4
On-state resistance: 0.34Ω
Power dissipation: 104.2W
Polarisation: unipolar
Technology: CoolMOS™
Produkt ist nicht verfügbar
| IPL65R460CFDAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.3A
Power dissipation: 83.3W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.3A; 83.3W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.3A
Power dissipation: 83.3W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.46Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FF45MR12W1M1B11BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Topology: MOSFET half-bridge; NTC thermistor
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 108.01 EUR |
| IPA083N10N5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 2.75 EUR |
| 34+ | 2.1 EUR |
| IPP083N10N5AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 100W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 100W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPA083N10NM5SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 34+ | 2.14 EUR |
| 38+ | 1.93 EUR |
| 43+ | 1.7 EUR |
| 48+ | 1.52 EUR |
| 50+ | 1.43 EUR |
| TLE9250SJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
| TLE9250XSJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
| BFR360FH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Collector current: 35mA
Type of transistor: NPN
Power dissipation: 0.21W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: TSFP-3
Frequency: 14GHz
Collector-emitter voltage: 6V
Current gain: 90...160
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 6V; 35mA; 0.21W; TSFP-3
Collector current: 35mA
Type of transistor: NPN
Power dissipation: 0.21W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: RF
Mounting: SMD
Case: TSFP-3
Frequency: 14GHz
Collector-emitter voltage: 6V
Current gain: 90...160
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 14.3 EUR |
| IPT029N08N5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Case: PG-HSOF-8
Mounting: SMD
Kind of package: tape
Pulsed drain current: 676A
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 70nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W
Case: PG-HSOF-8
Mounting: SMD
Kind of package: tape
Pulsed drain current: 676A
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Polarisation: unipolar
Gate charge: 70nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| IPA80R750P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 1.84 EUR |
| 43+ | 1.67 EUR |
| 65+ | 1.1 EUR |
| 69+ | 1.04 EUR |
| IPA95R750P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP
Mounting: THT
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: TO220FP
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP
Mounting: THT
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 28W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: TO220FP
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| IPD80R750P7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| IPD95R750P7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK
Mounting: SMD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: DPAK
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK
Mounting: SMD
Drain-source voltage: 950V
Drain current: 5.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 73W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Technology: CoolMOS™ P7
Case: DPAK
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| IPP60R750E6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 48W; PG-TO220-3
Mounting: THT
Power dissipation: 48W
Polarisation: unipolar
Technology: CoolMOS™ E6
Drain current: 5.7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 0.75Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 48W; PG-TO220-3
Mounting: THT
Power dissipation: 48W
Polarisation: unipolar
Technology: CoolMOS™ E6
Drain current: 5.7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 0.75Ω
Produkt ist nicht verfügbar
| IPP80R750P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| IPU80R750P7AKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 51W; IPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 51W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| IPAN70R750P7SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: CoolMOS™ P7
Drain-source voltage: 700V
Drain current: 4A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 20.8W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 8.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: CoolMOS™ P7
Drain-source voltage: 700V
Drain current: 4A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 20.8W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 8.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 57+ | 1.26 EUR |
| 74+ | 0.98 EUR |
| 83+ | 0.87 EUR |
| 96+ | 0.75 EUR |
| 102+ | 0.7 EUR |
| IAUC64N08S5L075ATMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 256A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 256A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BAS7004SH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT363; 250mW
Mounting: SMD
Case: SOT363
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series x2
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT363; 250mW
Mounting: SMD
Case: SOT363
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series x2
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Type of diode: Schottky switching
Produkt ist nicht verfügbar
| IPP60R022S7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: THT
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: TO220
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Mounting: THT
Polarisation: unipolar
Technology: CoolMOS™ S7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 375A
Case: TO220
Drain-source voltage: 600V
Drain current: 23A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Produkt ist nicht verfügbar
| BAS7006WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Case: SOT323
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 70V; 70mA; SOT323; 250mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Case: SOT323
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 239+ | 0.3 EUR |
| FF200R17KE4HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: AG-62MM-1
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 243.2 EUR |
| FS150R17PE4BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO4-1
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: AG-ECONO4-1
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: EconoPACK™ 4
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
| TT162N16KOFHPSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 162A; BG-PB34AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 162A
Case: BG-PB34AT-1
Max. forward voltage: 1.41V
Max. forward impulse current: 4.4kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 162A; BG-PB34AT-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 162A
Case: BG-PB34AT-1
Max. forward voltage: 1.41V
Max. forward impulse current: 4.4kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| 1EDN7550BXTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; low-side
Topology: single transistor
Voltage class: 80V
Mounting: SMD
Case: PG-SOT23-6
Supply voltage: 4.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; low-side
Topology: single transistor
Voltage class: 80V
Mounting: SMD
Case: PG-SOT23-6
Supply voltage: 4.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 1
auf Bestellung 1545 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 1.09 EUR |
| 75+ | 0.96 EUR |
| 107+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| BSC082N10LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPL60R180P6AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.4A
Power dissipation: 176W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.4A
Power dissipation: 176W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP60R180P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 72W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 72W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| IPL60R104C7AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 122W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 122W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPB016N06L3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 180A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Produkt ist nicht verfügbar
| IRF6727MTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Power dissipation: 89W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FP25R12W1T7B11BPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: AG-EASY1B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 25A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 25A
Case: AG-EASY1B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Produkt ist nicht verfügbar
| PVI1050NSPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Produkt ist nicht verfügbar
| BSC030N04NSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar