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IPP083N10N5AKSA1 Infineon Technologies
auf Bestellung 903 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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89+ | 1.73 EUR |
96+ | 1.55 EUR |
113+ | 1.26 EUR |
200+ | 1.14 EUR |
500+ | 1.09 EUR |
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Technische Details IPP083N10N5AKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 73A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 73A (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 49µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V.
Weitere Produktangebote IPP083N10N5AKSA1 nach Preis ab 1.32 EUR bis 3.08 EUR
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IPP083N10N5AKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 435 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP083N10N5AKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 435 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP083N10N5AKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP083N10N5AKSA1 Produktcode: 166075 |
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IPP083N10N5AKSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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IPP083N10N5AKSA1 | Hersteller : Infineon Technologies |
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IPP083N10N5AKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 73A Power dissipation: 100W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPP083N10N5AKSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 49µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V |
Produkt ist nicht verfügbar |
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IPP083N10N5AKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 100W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 73A Power dissipation: 100W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |